JPH02167850A - High dielectric constant porcelain composition - Google Patents
High dielectric constant porcelain compositionInfo
- Publication number
- JPH02167850A JPH02167850A JP63321598A JP32159888A JPH02167850A JP H02167850 A JPH02167850 A JP H02167850A JP 63321598 A JP63321598 A JP 63321598A JP 32159888 A JP32159888 A JP 32159888A JP H02167850 A JPH02167850 A JP H02167850A
- Authority
- JP
- Japan
- Prior art keywords
- mgo
- dielectric constant
- composition
- high dielectric
- low
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 42
- 229910052573 porcelain Inorganic materials 0.000 title abstract description 6
- 239000000919 ceramic Substances 0.000 claims description 17
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 abstract description 20
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 abstract description 11
- 239000003990 capacitor Substances 0.000 abstract description 8
- 238000005245 sintering Methods 0.000 abstract description 8
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 abstract description 6
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 abstract description 5
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 5
- 229910010252 TiO3 Inorganic materials 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 4
- YEXPOXQUZXUXJW-UHFFFAOYSA-N lead(II) oxide Inorganic materials [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 abstract description 3
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 abstract description 3
- 239000000395 magnesium oxide Substances 0.000 description 10
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 9
- 238000010304 firing Methods 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000001354 calcination Methods 0.000 description 2
- 239000003985 ceramic capacitor Substances 0.000 description 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910002971 CaTiO3 Inorganic materials 0.000 description 1
- -1 La20* Chemical compound 0.000 description 1
- 229910017676 MgTiO3 Inorganic materials 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910021523 barium zirconate Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は高誘電率Ｍｉ器組組成に係り、特に比抵抗が高
く、低温焼結が可能な高誘電率の磁器組成物に関するも
のである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a high dielectric constant Mi ceramic composition, and particularly relates to a high dielectric constant ceramic composition that has a high specific resistance and can be sintered at a low temperature. .
［従来の技術］
従来、高誘電率磁器組成物としては、チタン酸バリウム
（ＢａＴｉＯｓ）を主体とする組成物が一般に使用され
ている。即ち、ＢａＴｉ０ａを基体とし、これにキュリ
ー点を室温付近に移動させるシフター剤と容量温度特性
を改善するデブレッサ剤、さらに焼結促進剤、還元防止
剤などを加えた組成とするのが一般的である。[Prior Art] Conventionally, as a high dielectric constant ceramic composition, a composition mainly composed of barium titanate (BaTiOs) has been generally used. That is, the composition is generally made of BaTiOa as a base material, to which are added a shifter agent that moves the Curie point to around room temperature, a depressor agent that improves the capacitance-temperature characteristics, and a sintering accelerator, reduction inhibitor, etc. be.
シフター剤としては、Ｂａ５ｎＯａ、ＢａＺｒＯ３、Ｃ
ａｒｒｙｓ 、Ｃａ５ｎＯｓ 、５ｒＴｉ０３ 、Ｐｂ
Ｔｉ０ａ 、Ｌａ２ ｏｎ 、ＣｅＯ２などが用いられ
、デプレッサ剤としては、ＣａＴｉＯ３、ＭｇＴｉＯ３
，Ｂｉ２ （ＳｎＯ３）３゜Ｂ１２（ＴｉＯ３）３．Ｎ
ｉＳｎＯ３，ＭｇＺｒＱｌ 、Ｍｇ５ｎＯａなどが用い
られている。また焼結促進剤としては、Ａｊ２２０３．
ＳｉＯ２゜ＺｎＯ，ＣｅＯ２，Ｂ２０３．Ｎｂｔ Ｏ’
＞ 。As shifter agents, Ba5nOa, BaZrO3, C
arys, Ca5nOs, 5rTi03, Pb
Ti0a, La2 on, CeO2, etc. are used, and as depressor agents, CaTiO3, MgTiO3
, Bi2 (SnO3)3°B12 (TiO3)3. N
iSnO3, MgZrQl, Mg5nOa, etc. are used. Moreover, as a sintering accelerator, Aj2203.
SiO2゜ZnO, CeO2, B203. Nbt O'
>.
Ｗ ０２などが用いられ、還元防止剤としては、ＭｎＯ
２，Ｆｅ２Ｏ３，ＣｕＯなどが用いられている。W 02 etc. are used, and as a reduction inhibitor, MnO
2, Fe2O3, CuO, etc. are used.
しかしながら、チタン酸バリウムを主成分とする組成物
は、焼結温度が１３００〜１４００ｔの高温であるため
、焼成コストが高く、特にこれを積層コンデンサ定利用
する場合には、内部電極として、Ｐｄ、Ｐｔ等の高価な
高融点貴金属を用いなければならず、コンデンサのコス
ト低減の大きな障害になっていた。However, since the composition containing barium titanate as the main component has a high sintering temperature of 1,300 to 1,400 tons, the firing cost is high.Especially when this composition is used regularly in a multilayer capacitor, Pd, Pd, This requires the use of expensive high-melting point noble metals such as Pt, which has been a major obstacle to reducing the cost of capacitors.
このため、従来より、積層コンデンサの内部電極として
、安価な銀を主成分とする電極を使用し得、積層コンデ
ンサの製造コストを低減し得る、低温焼結が可能な誘電
体材料の出現が要望されていた。For this reason, there has been a demand for the emergence of dielectric materials that can be sintered at low temperatures and that can reduce the manufacturing cost of multilayer capacitors by using inexpensive silver-based electrodes as the internal electrodes of multilayer capacitors. It had been.
そこで、焼結温度が低く、しかも誘電率、絶縁抵抗及び
容量抵抗積の大きい磁器組成物として、（Ｐｂ、Ｌａ）
（Ｚｒ、Ｔｉ）Ｏｓ及びＰ ｂ （Ｍｇ＊ｚｓ Ｎ ｂ
ｚｙｓ ） Ｏｓを、下記一般式で示されるような組成
比で含んでなることを特徴とする誘電体磁器組成物が提
案され、本出願人より先に特許出願された（特開昭６２
−１３８３６０号）。Therefore, as a ceramic composition with a low sintering temperature and high dielectric constant, insulation resistance, and capacitance-resistance product, (Pb, La)
(Zr, Ti)Os and P b (Mg*zs N b
A dielectric ceramic composition characterized by containing zys ) Os in a composition ratio as shown by the following general formula was proposed, and a patent application was filed earlier by the present applicant (Japanese Patent Application Laid-Open No. 62
-138360).
Ｙ （ｐｂｌ−ｗ Ｌａｗ）（Ｚｒ＋−ｚ ”ｒ
ｔ、） ０３（１−Ｙ）Ｐｂ （Ｍｇｓ／ｓ Ｎ
ｂ２／、）Ｏ３［発明が解決しようとする課題］
特開昭６２−１３８３６０号に開示される誘電体磁器組
成物によれば、低温焼結性、誘電率、絶縁抵抗、容量抵
抗が改善された磁器組成物が提供されるが、誘電率が未
だ十分なものとはいえず、より誘電率の高い高誘電率磁
器組成物の出現が望まれていた。Y (pbl-w Law) (Zr+-z ”r
t, ) 03(1-Y)Pb (Mgs/s N
b2/, )O3 [Problems to be Solved by the Invention] According to the dielectric ceramic composition disclosed in JP-A-62-138360, low-temperature sinterability, dielectric constant, insulation resistance, and capacitance resistance are improved. However, it cannot be said that the dielectric constant is still sufficient, and the emergence of a high dielectric constant ceramic composition having a higher dielectric constant has been desired.
本発明は、上記従来の問題点を解決し、焼結温度が低く
、比抵抗及び容量抵抗積が大きく、しかも誘電率の大き
い高誘電率磁器組成物を提供することを目的とする。An object of the present invention is to solve the above-mentioned conventional problems and provide a high-permittivity ceramic composition that has a low sintering temperature, a large specific resistance and capacitance-resistance product, and a large dielectric constant.
［８題を解決するための手段及び作用］本発明の高誘電
率磁器組成物は、ｐｂｏ。[Means and effects for solving the 8 problems] The high dielectric constant ceramic composition of the present invention is pbo.
Ｌａ２ ｏ３ 、ＺｒＯ２，ＴｉＯ３，ＭｇＯ及びＮｂ
ｚＯ５を含む組成物であって、下記一般式で示される組
成の主成分に対して、ＭｇＯを０．０５〜１．５重量％
含むことを特徴とする。La2 o3 , ZrO2, TiO3, MgO and Nb
A composition containing zO5, which contains 0.05 to 1.5% by weight of MgO based on the main component of the composition represented by the following general formula.
It is characterized by containing.
Ｘ （Ｐｂｌ −ｕ Ｌａｕ ）（Ｚｒ＋ −ｖ
Ｔｔｖ）Ｏｓ＋ｕｚｚ（１−Ｘ） Ｐｂ （Ｍｇ＋／
ｓ Ｎｂｘｙｓ ） Ｏｓ以下に本発明の詳細な説明す
る。X (Pbl -u Lau) (Zr+ -v
Ttv)Os+uzz(1-X)Pb(Mg+/
s Nbxys ) Os The present invention will be described in detail below.
本発明の高誘電率磁器組成物は、
ＰｂＯ，Ｌａ２Ｏ３，ＺｒＯ２，ＴｉＯ２゜ＭｇＯ，Ｎ
ｂ２Ｏ５よりなる組成物を下記一般式％式％
で表わした時、
０．１０≦Ｕ≦０．２８
０．３０≦Ｖ≦ｉ、ｏ。The high dielectric constant ceramic composition of the present invention includes PbO, La2O3, ZrO2, TiO2゜MgO, N
When a composition consisting of b2O5 is expressed by the following general formula %, 0.10≦U≦0.28 0.30≦V≦i, o.
０００３≦Ｘ≦０．４０
なる主成分に、ＭｇＯを０．０５〜１．５重量％添加し
てなるものである。0003≦X≦0.40, and MgO is added in an amount of 0.05 to 1.5% by weight.
以下に、本発明の高誘電率磁器組成物の組成比の限定理
由について説明する。The reason for limiting the composition ratio of the high dielectric constant ceramic composition of the present invention will be explained below.
前記（１）式中、Ｕが０．１未満であると得られる組成
物の比抵抗が小さくなり、Ｕが０．２８を超えるとキュ
ーリー点が著しく低温側に変化して誘電率が下がること
となる。このため、Ｕは０．１０以上０．２８以下の範
囲とする。In the above formula (1), when U is less than 0.1, the resistivity of the resulting composition becomes small, and when U exceeds 0.28, the Curie point changes significantly to the low temperature side and the dielectric constant decreases. becomes. Therefore, U is set in a range of 0.10 or more and 0.28 or less.
また、（１）式中、■が０．３０未満では、得られる組
成物の焼結温度が高くなる。このためＶは０．３０以上
１．００以下の範囲とする。Furthermore, in formula (1), if ■ is less than 0.30, the sintering temperature of the resulting composition becomes high. Therefore, V is set in a range of 0.30 or more and 1.00 or less.
更にＣＩ）式中、Ｘが０．０３未満では、得られる組成
物の比抵抗が小さくなり、Ｘが０．４０を超えると誘電
率が小さくなる。このため、Ｘは０．０３以上０．４０
以下の範囲とする。Furthermore, in formula CI), if X is less than 0.03, the resistivity of the resulting composition will be small, and if X is more than 0.40, the dielectric constant will be small. Therefore, X is 0.03 or more and 0.40
The range shall be as follows.
また、ＭｇＯは誘電率の向上に有効であるが、（Ｉ）式
で示される主成分に対して、ＭｇＯの含有量が０．０５
重量％未満ではその効果が十分に得られず、１．５重量
％を超えると比抵抗が小さくなる。このため、（Ｉ）式
で示される主成分に対するＭｇＯの含有量は０．０５〜
１．５重量％とする。Furthermore, although MgO is effective in improving the dielectric constant, the content of MgO is 0.05 with respect to the main component represented by formula (I).
If it is less than 1.5% by weight, the effect will not be sufficiently obtained, and if it exceeds 1.5% by weight, the specific resistance will become small. Therefore, the content of MgO with respect to the main component represented by formula (I) is 0.05 to
The amount is 1.5% by weight.
このような本発明の高誘電率磁器組成物を製造するには
、例えば、酸化鉛（ｐｂｏ）、酸化ランタン（Ｌａ２０
３） 酸化ジルコニウム（Ｚｒ０２）、酸化チタン（
Ｔ ’ ”’２ ） 、酸化マグネシウム（ＭｇＯ）、
酸化ニオブ（Ｎｂ２ｏ５）等の粉末を、所定の割合とな
るよう秤量し、湿式ボールミル等を用いて十分に混合す
る。In order to manufacture such a high dielectric constant ceramic composition of the present invention, for example, lead oxide (pbo), lanthanum oxide (La20
3) Zirconium oxide (Zr02), titanium oxide (
T''''2), magnesium oxide (MgO),
Powder such as niobium oxide (Nb2o5) is weighed out to a predetermined ratio and thoroughly mixed using a wet ball mill or the like.
次にこの混合物を乾燥した後、必要に応じ、７００〜８
５０℃の範囲で数時間仮焼成する。この仮焼成は必ずし
も行う必要はないが、これを行うことにより粒子がより
均一化され、誘電特性が向上する傾向がある。仮焼成を
行った場合には、仮焼成物を更に湿式ボールよル等で粉
砕し、乾燥後、ポリビニルアルコールなどの適当なバイ
ンダを加えて、顆粒を作り、これを所定の形状にブレス
底形した後、本焼成を行う、この本焼成は、１０００〜
１２００℃の温度範囲で数時間行う。Next, after drying this mixture, if necessary,
Temporary firing is performed at a temperature of 50°C for several hours. Although it is not necessary to perform this pre-calcination, it tends to make the particles more uniform and improve the dielectric properties. When calcining is performed, the calcined product is further crushed using a wet ball grinder, etc. After drying, an appropriate binder such as polyvinyl alcohol is added to make granules, which are then shaped into a predetermined shape with the bottom of a press. After that, the main firing is performed.
It is carried out for several hours at a temperature range of 1200°C.
本発明で限定される組成比の高誘電率磁器組成物は、誘
電率、比抵抗及び容量抵抗積が大きく、磁器コンデンサ
材料として優れた特性を有する。The high dielectric constant ceramic composition having the composition ratio defined in the present invention has large dielectric constant, specific resistance, and capacitance-resistance product, and has excellent characteristics as a ceramic capacitor material.
その上、焼成温度が低く、誘電損失も低いという利点も
有している。Moreover, it also has the advantage of low firing temperature and low dielectric loss.
［実施例］
以下に本発明を実施例を挙げて更に具体的に説明するが
、本発明はその要旨を超えない限り、以下の実施例に限
定されるものではない。[Examples] The present invention will be described in more detail below with reference to Examples, but the present invention is not limited to the following Examples unless it exceeds the gist thereof.
実施例１
原料としてＰｂＯ，Ｌａ２０＊、ＺｒＯ２゜ＴｉＯ２，
ＭｇＯ，Ｎｂ２Ｏ５を使用し、これらを第１表に示す配
合比となるように秤量し、ボール主ル中で２０時時間式
混合した０次いで、混合物を脱水、乾燥後、７５０℃で
２時間保持して仮焼し、再びボールミル中で２０時時間
式粉砕した後、脱水、乾燥した。Example 1 PbO, La20*, ZrO2゜TiO2, as raw materials
Using MgO and Nb2O5, these were weighed to have the compounding ratio shown in Table 1, and mixed in a bowl for 20 hours.Then, the mixture was dehydrated, dried, and held at 750°C for 2 hours. The mixture was calcined, then ground again in a ball mill for 20 hours, and then dehydrated and dried.
得られた粉末に、有機バインダを加え、成形圧力３ ｔ
ｏ ｎ ／ ｃ ｒｒ？で、直径１６ｍｍ、厚さ０．
８ｍｍの円板に加圧成形した。この成形物をマグネシア
磁器容器に入れて、第１表に示す如く、ｔ ｏｏｏ〜１
１５０℃の温度て１時間焼成した。An organic binder was added to the obtained powder, and a molding pressure of 3 t was applied.
on/crr? The diameter is 16mm and the thickness is 0.
It was pressure molded into an 8 mm disc. This molded product was placed in a magnesia porcelain container, and as shown in Table 1,
It was baked at a temperature of 150° C. for 1 hour.
得られた円板形状の誘電体の両面に、銀電極を７００〜
８００℃で焼付けて、その−電気的特性を調べた。Silver electrodes were placed on both sides of the obtained disk-shaped dielectric material at a temperature of 700~
It was baked at 800°C and its electrical properties were investigated.
結果を第１表に示す。The results are shown in Table 1.
なお、誘電率及び誘電損失は、ＹＨＰデジタルＬＣＲメ
ータモデル４２７４Ａを用い、測定周波数ＩＫＨｚ、測
定電圧１．ＯＶｒｍＳにて測定した。また、比抵抗はＹ
ＨＰモデル４３２９Ａを使用し、印加電圧１００Ｖにて
電圧印加後、１分後の絶縁抵抗値により求めた。Note that the dielectric constant and dielectric loss were measured using a YHP digital LCR meter model 4274A at a measurement frequency of IKHz and a measurement voltage of 1. Measured using OVrmS. Also, the specific resistance is Y
Using HP model 4329A, the insulation resistance value was determined 1 minute after applying a voltage of 100V.
第１表より明らかなように、本発明の範囲内の組成物は
いずれも、誘電率及び比抵抗が犬きく、磁器コンデンサ
材料として優れた特性を有し、しかも焼結温度が低く、
誘電損失も低いという利点も有している。As is clear from Table 1, all the compositions within the scope of the present invention have excellent dielectric constants and specific resistances, excellent properties as ceramic capacitor materials, and have low sintering temperatures.
It also has the advantage of low dielectric loss.
［発明の効果］
以上詳述した通り、本発明の高誘電率磁器組成物は、誘
電率及び比抵抗が大きく、かつ誘電損失が小さい、この
ため、本発明の磁器組成物を用いることにより、信頼性
の高い小型大容量コンデンサを得ることができる。[Effects of the Invention] As detailed above, the high dielectric constant ceramic composition of the present invention has a large dielectric constant and resistivity, and a small dielectric loss. Therefore, by using the ceramic composition of the present invention, A highly reliable small-sized, large-capacity capacitor can be obtained.
しかも、本発明の高誘電率磁器組成物は、焼成温度が低
いため、焼成コストが廉価で、積層コンデンサに用いた
場合、比較的安価な銀系などの内部電極を用いることが
できる。このため、積層コンデンサの製造コストを低下
させ、その価格を大幅に低減することができる。Moreover, since the high dielectric constant ceramic composition of the present invention has a low firing temperature, the firing cost is low, and when used in a multilayer capacitor, relatively inexpensive internal electrodes such as silver-based materials can be used. Therefore, the manufacturing cost of the multilayer capacitor can be reduced, and its price can be significantly reduced.
代理人 弁理士 重 野 剛Agent: Patent attorney Tsuyoshi Shigeno
Claims (1)
３，ＭｇＯ及びＮｂ＿２Ｏ＿５を含む組成物であつて、
下記一般式で示される組成の主成分に対して、ＭｇＯを
０．０５〜１．５重量％含むことを特徴とする高誘電率
磁器組成物。 Ｘ（Ｐｂ＿１＿−＿ｕＬａ＿ｕ）（Ｚｒ＿１＿−＿ｖＴ
ｉ＿ｖ）Ｏ＿３＿＋＿ｕ＿／＿２・（１−Ｘ）Ｐｂ（Ｍ
ｇ＿１＿／＿３Ｎｂ＿２＿／＿３）Ｏ＿３ ［式中、０．１０≦ｕ≦０．２８ ０．３０≦ｖ≦１．００ ０．０３≦ｘ≦０．４０］(1) PbO, La_2O_3, ZrO_2, TiO_
3. A composition containing MgO and Nb_2O_5,
A high dielectric constant ceramic composition characterized by containing 0.05 to 1.5% by weight of MgO based on the main components of the composition represented by the following general formula. X(Pb_1_-_uLa_u)(Zr_1_-_vT
i_v)O_3_+_u_/_2・(1-X)Pb(M
g_1_/_3Nb_2_/_3)O_3 [In the formula, 0.10≦u≦0.28 0.30≦v≦1.00 0.03≦x≦0.40]
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63321598A JPH02167850A (en) | 1988-12-20 | 1988-12-20 | High dielectric constant porcelain composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63321598A JPH02167850A (en) | 1988-12-20 | 1988-12-20 | High dielectric constant porcelain composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02167850A true JPH02167850A (en) | 1990-06-28 |
| JPH0569058B2 JPH0569058B2 (en) | 1993-09-30 |
Family
ID=18134329
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63321598A Granted JPH02167850A (en) | 1988-12-20 | 1988-12-20 | High dielectric constant porcelain composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02167850A (en) |
-
1988
- 1988-12-20 JP JP63321598A patent/JPH02167850A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0569058B2 (en) | 1993-09-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0232227B2 (en) | ||
| JPH02123614A (en) | High permittivity type porcelain composition | |
| JP4201242B2 (en) | High dielectric constant dielectric ceramic composition | |
| JPS597665B2 (en) | High dielectric constant porcelain composition | |
| JPH01100051A (en) | Dielectric porcelain composition | |
| JPH058524B2 (en) | ||
| JPH02167850A (en) | High dielectric constant porcelain composition | |
| JPS5910951B2 (en) | Raw material composition for manufacturing high dielectric constant porcelain | |
| JPS5815078A (en) | High dielectric constant ceramic dielectric composition | |
| JP3243874B2 (en) | Dielectric porcelain composition | |
| JPH0571538B2 (en) | ||
| JP2621478B2 (en) | High dielectric constant porcelain composition | |
| JPH02252649A (en) | Dielectric porcelain composition | |
| JPH0316773B2 (en) | ||
| JPH05330909A (en) | Porcelain composition of high dielectric constant | |
| JPH0283257A (en) | Porcelain composition of high permittivity for temperature compensation and production thereof | |
| JPH02183905A (en) | Dielectric ceramic composite | |
| JPH0517222A (en) | Porcelain composition for temperature compensation | |
| JPH05213666A (en) | Dielectric porcelain composition and its production | |
| JPH03285870A (en) | Grain boundary insulation type semiconductor porcelain composition and production thereof | |
| JPS63162571A (en) | High permittivity ceramic composition | |
| JP2001302334A (en) | Dielectric ceramic composition | |
| JPH0815009B2 (en) | Dielectric porcelain composition | |
| JPH05325640A (en) | Dielectric porcelain composition | |
| JPH0794020A (en) | Composition for barium titanate semiconductor ceramic |