JPH0225252B2 - - Google Patents

Info

Publication number
JPH0225252B2
JPH0225252B2 JP57037625A JP3762582A JPH0225252B2 JP H0225252 B2 JPH0225252 B2 JP H0225252B2 JP 57037625 A JP57037625 A JP 57037625A JP 3762582 A JP3762582 A JP 3762582A JP H0225252 B2 JPH0225252 B2 JP H0225252B2
Authority
JP
Japan
Prior art keywords
region
insulating film
element isolation
base
isolation insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57037625A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58154265A (ja
Inventor
Hajime Kamioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57037625A priority Critical patent/JPS58154265A/ja
Publication of JPS58154265A publication Critical patent/JPS58154265A/ja
Publication of JPH0225252B2 publication Critical patent/JPH0225252B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
JP57037625A 1982-03-10 1982-03-10 半導体装置の製造方法 Granted JPS58154265A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57037625A JPS58154265A (ja) 1982-03-10 1982-03-10 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57037625A JPS58154265A (ja) 1982-03-10 1982-03-10 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58154265A JPS58154265A (ja) 1983-09-13
JPH0225252B2 true JPH0225252B2 (enrdf_load_stackoverflow) 1990-06-01

Family

ID=12502810

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57037625A Granted JPS58154265A (ja) 1982-03-10 1982-03-10 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58154265A (enrdf_load_stackoverflow)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4111720A (en) * 1977-03-31 1978-09-05 International Business Machines Corporation Method for forming a non-epitaxial bipolar integrated circuit

Also Published As

Publication number Publication date
JPS58154265A (ja) 1983-09-13

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