JPS58154265A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS58154265A
JPS58154265A JP57037625A JP3762582A JPS58154265A JP S58154265 A JPS58154265 A JP S58154265A JP 57037625 A JP57037625 A JP 57037625A JP 3762582 A JP3762582 A JP 3762582A JP S58154265 A JPS58154265 A JP S58154265A
Authority
JP
Japan
Prior art keywords
region
base
element isolation
collector
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57037625A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0225252B2 (enrdf_load_stackoverflow
Inventor
Hajime Kamioka
上岡 元
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57037625A priority Critical patent/JPS58154265A/ja
Publication of JPS58154265A publication Critical patent/JPS58154265A/ja
Publication of JPH0225252B2 publication Critical patent/JPH0225252B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30Devices controlled by electric currents or voltages
    • H10D48/32Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34Bipolar devices
    • H10D48/345Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
JP57037625A 1982-03-10 1982-03-10 半導体装置の製造方法 Granted JPS58154265A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57037625A JPS58154265A (ja) 1982-03-10 1982-03-10 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57037625A JPS58154265A (ja) 1982-03-10 1982-03-10 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58154265A true JPS58154265A (ja) 1983-09-13
JPH0225252B2 JPH0225252B2 (enrdf_load_stackoverflow) 1990-06-01

Family

ID=12502810

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57037625A Granted JPS58154265A (ja) 1982-03-10 1982-03-10 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58154265A (enrdf_load_stackoverflow)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53122387A (en) * 1977-03-31 1978-10-25 Ibm Method of forming ic

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53122387A (en) * 1977-03-31 1978-10-25 Ibm Method of forming ic

Also Published As

Publication number Publication date
JPH0225252B2 (enrdf_load_stackoverflow) 1990-06-01

Similar Documents

Publication Publication Date Title
EP0139371B1 (en) Process for manufacturing a mos integrated circuit employing a method of forming refractory metal silicide areas
TW200843101A (en) Bipolar transistor with silicided sub-collector
JPH02264437A (ja) 半導体デバイスの製造方法
EP0242746A1 (en) Method of making an integrated circuit
JPH0719838B2 (ja) 半導体装置およびその製造方法
JPS622708B2 (enrdf_load_stackoverflow)
JPH05326542A (ja) 半導体装置及びその製造方法
JPS63199463A (ja) バイポーラとmosトランジスタを有するデバイスを作成する方法
JPH05102439A (ja) 半導体装置
JPH0445538A (ja) 半導体装置の製造方法
JPH11354780A (ja) 半導体装置及びその製造方法
JPS58154265A (ja) 半導体装置の製造方法
EP0242893B1 (en) Method of manufacturing a semiconductor device
JPH0363210B2 (enrdf_load_stackoverflow)
JPH0239091B2 (enrdf_load_stackoverflow)
JP2000260780A (ja) 半導体装置およびその製造方法
RU2234165C1 (ru) Способ изготовления автомасштабируемой бикмоп структуры
JPH0689906A (ja) 絶縁ゲート電界効果トランジスタの製造方法
JPH10340911A (ja) 半導体装置およびその製造方法
JPS58200553A (ja) 半導体装置
JP2003303828A (ja) 半導体装置及びその製造方法
JPH03136335A (ja) 半導体装置の製造方法
JP2003297845A (ja) 半導体装置およびその製造方法
JP3070284B2 (ja) 集積回路装置用回路要素の作り込み方法
JPH03205870A (ja) 半導体装置