JPH02250331A - Semiconductor device and its manufacture - Google Patents

Semiconductor device and its manufacture

Info

Publication number
JPH02250331A
JPH02250331A JP7062489A JP7062489A JPH02250331A JP H02250331 A JPH02250331 A JP H02250331A JP 7062489 A JP7062489 A JP 7062489A JP 7062489 A JP7062489 A JP 7062489A JP H02250331 A JPH02250331 A JP H02250331A
Authority
JP
Japan
Prior art keywords
concentration
region
high
formed
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7062489A
Inventor
Kazuhiro Komori
Satoshi Meguro
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7062489A priority Critical patent/JPH02250331A/en
Publication of JPH02250331A publication Critical patent/JPH02250331A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To obtain a semiconductor device whose reliability is high and which has been made fine by a method wherein a drain region is constituted of a low-concentration region and of a high-concentration region and the low- concentration region is formed in such a way that it is overlapped stably with a gate electrode and that its surface concentration is nearly definite in a transverse direction.
CONSTITUTION: The following are formed on the surface of a semiconductor substrate 1: a low-concentration N- type semiconductor region 5 which has been doped with phosphorus of a prescribed amount; a high-concentration N+ type semiconductor region 6 which has been doped with arsenic of a prescribed amount. The N- type semiconductor region 5 is formed in such a way that it is over-lapped stably with a gate electrode 3 over a prescribed length. That is to say, since the N- type semiconductor region is formed so as to be overlapped stably with the gate electrode and so as to be a nearly definite concentration at their overlapped part, it is possible to reduce hot carriers and to make a parasitic resistance small. Thereby, since reliability of a MOS transistor can be enhanced and its driving capacity can be enhanced, a high-performance integrated circuit which has been made fine can be realized.
COPYRIGHT: (C)1990,JPO&Japio
JP7062489A 1989-03-24 1989-03-24 Semiconductor device and its manufacture Pending JPH02250331A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7062489A JPH02250331A (en) 1989-03-24 1989-03-24 Semiconductor device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7062489A JPH02250331A (en) 1989-03-24 1989-03-24 Semiconductor device and its manufacture

Publications (1)

Publication Number Publication Date
JPH02250331A true JPH02250331A (en) 1990-10-08

Family

ID=13436960

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7062489A Pending JPH02250331A (en) 1989-03-24 1989-03-24 Semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPH02250331A (en)

Cited By (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02280342A (en) * 1989-04-20 1990-11-16 Mitsubishi Electric Corp Mos semiconductor device and manufacture thereof
JPH02310931A (en) * 1989-05-25 1990-12-26 Mitsubishi Electric Corp Semiconductor device and its manufacture
JPH03203243A (en) * 1989-12-28 1991-09-04 Nec Corp Method of manufacturing semiconductor device
US5214305A (en) * 1990-08-28 1993-05-25 United Microelectronics Corporation Polycide gate MOSFET for integrated circuits
JPH10313117A (en) * 1997-03-10 1998-11-24 Denso Corp Mis transistor and manufacture thereof
JP2012504332A (en) * 2008-09-29 2012-02-16 クロステック・キャピタル,リミテッド・ライアビリティ・カンパニー Transistor, image sensor including transistor, and method of manufacturing image sensor
JP2013533483A (en) * 2010-07-03 2013-08-22 ライフ テクノロジーズ コーポレーション Chemically sensitive sensor with lightly doped drain
US9110015B2 (en) 2010-09-24 2015-08-18 Life Technologies Corporation Method and system for delta double sampling
US9164070B2 (en) 2010-06-30 2015-10-20 Life Technologies Corporation Column adc
US9239313B2 (en) 2010-06-30 2016-01-19 Life Technologies Corporation Ion-sensing charge-accumulation circuits and methods
US9269708B2 (en) 2006-12-14 2016-02-23 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
US9270264B2 (en) 2012-05-29 2016-02-23 Life Technologies Corporation System for reducing noise in a chemical sensor array
US9404920B2 (en) 2006-12-14 2016-08-02 Life Technologies Corporation Methods and apparatus for detecting molecular interactions using FET arrays
US9618475B2 (en) 2010-09-15 2017-04-11 Life Technologies Corporation Methods and apparatus for measuring analytes
US9671363B2 (en) 2013-03-15 2017-06-06 Life Technologies Corporation Chemical sensor with consistent sensor surface areas
US9823217B2 (en) 2013-03-15 2017-11-21 Life Technologies Corporation Chemical device with thin conductive element
US9835585B2 (en) 2013-03-15 2017-12-05 Life Technologies Corporation Chemical sensor with protruded sensor surface
US9841398B2 (en) 2013-01-08 2017-12-12 Life Technologies Corporation Methods for manufacturing well structures for low-noise chemical sensors
US9852919B2 (en) 2013-01-04 2017-12-26 Life Technologies Corporation Methods and systems for point of use removal of sacrificial material
US9927393B2 (en) 2009-05-29 2018-03-27 Life Technologies Corporation Methods and apparatus for measuring analytes
US9951382B2 (en) 2006-12-14 2018-04-24 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
US9964515B2 (en) 2008-10-22 2018-05-08 Life Technologies Corporation Integrated sensor arrays for biological and chemical analysis
US9970984B2 (en) 2011-12-01 2018-05-15 Life Technologies Corporation Method and apparatus for identifying defects in a chemical sensor array
US9995708B2 (en) 2013-03-13 2018-06-12 Life Technologies Corporation Chemical sensor with sidewall spacer sensor surface
US10077472B2 (en) 2014-12-18 2018-09-18 Life Technologies Corporation High data rate integrated circuit with power management
US10100357B2 (en) 2013-05-09 2018-10-16 Life Technologies Corporation Windowed sequencing
US10379079B2 (en) 2014-12-18 2019-08-13 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
US10451585B2 (en) 2009-05-29 2019-10-22 Life Technologies Corporation Methods and apparatus for measuring analytes
US10458942B2 (en) 2013-06-10 2019-10-29 Life Technologies Corporation Chemical sensor array having multiple sensors per well

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61112379A (en) * 1984-11-07 1986-05-30 Hitachi Ltd Mos field effect transistor and manufacture thereof
JPS61210673A (en) * 1985-03-15 1986-09-18 Toshiba Corp Mis type semiconductor device
JPS62229933A (en) * 1986-03-31 1987-10-08 Hitachi Ltd Manufacture of semiconductor device
JPS6395669A (en) * 1986-10-13 1988-04-26 Matsushita Electric Ind Co Ltd Manufacture of semiconductor integrated circuit device
JPH01117066A (en) * 1987-10-29 1989-05-09 Fujitsu Ltd Manufacture of mos type semiconductor device
JPH01293654A (en) * 1988-05-23 1989-11-27 Sharp Corp Semiconductor integrated circuit device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61112379A (en) * 1984-11-07 1986-05-30 Hitachi Ltd Mos field effect transistor and manufacture thereof
JPS61210673A (en) * 1985-03-15 1986-09-18 Toshiba Corp Mis type semiconductor device
JPS62229933A (en) * 1986-03-31 1987-10-08 Hitachi Ltd Manufacture of semiconductor device
JPS6395669A (en) * 1986-10-13 1988-04-26 Matsushita Electric Ind Co Ltd Manufacture of semiconductor integrated circuit device
JPH01117066A (en) * 1987-10-29 1989-05-09 Fujitsu Ltd Manufacture of mos type semiconductor device
JPH01293654A (en) * 1988-05-23 1989-11-27 Sharp Corp Semiconductor integrated circuit device

Cited By (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02280342A (en) * 1989-04-20 1990-11-16 Mitsubishi Electric Corp Mos semiconductor device and manufacture thereof
JPH02310931A (en) * 1989-05-25 1990-12-26 Mitsubishi Electric Corp Semiconductor device and its manufacture
JPH03203243A (en) * 1989-12-28 1991-09-04 Nec Corp Method of manufacturing semiconductor device
US5214305A (en) * 1990-08-28 1993-05-25 United Microelectronics Corporation Polycide gate MOSFET for integrated circuits
JPH10313117A (en) * 1997-03-10 1998-11-24 Denso Corp Mis transistor and manufacture thereof
US9404920B2 (en) 2006-12-14 2016-08-02 Life Technologies Corporation Methods and apparatus for detecting molecular interactions using FET arrays
US10502708B2 (en) 2006-12-14 2019-12-10 Life Technologies Corporation Chemically-sensitive sensor array calibration circuitry
US9269708B2 (en) 2006-12-14 2016-02-23 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
US10415079B2 (en) 2006-12-14 2019-09-17 Life Technologies Corporation Methods and apparatus for detecting molecular interactions using FET arrays
US9989489B2 (en) 2006-12-14 2018-06-05 Life Technnologies Corporation Methods for calibrating an array of chemically-sensitive sensors
US10203300B2 (en) 2006-12-14 2019-02-12 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
US9951382B2 (en) 2006-12-14 2018-04-24 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
US8829577B2 (en) 2008-09-29 2014-09-09 Intellectual Ventures Ii Llc Transistor, image sensor with the same, and method of manufacturing the same
JP2012504332A (en) * 2008-09-29 2012-02-16 クロステック・キャピタル,リミテッド・ライアビリティ・カンパニー Transistor, image sensor including transistor, and method of manufacturing image sensor
US9964515B2 (en) 2008-10-22 2018-05-08 Life Technologies Corporation Integrated sensor arrays for biological and chemical analysis
US9927393B2 (en) 2009-05-29 2018-03-27 Life Technologies Corporation Methods and apparatus for measuring analytes
US10451585B2 (en) 2009-05-29 2019-10-22 Life Technologies Corporation Methods and apparatus for measuring analytes
US10481123B2 (en) 2010-06-30 2019-11-19 Life Technologies Corporation Ion-sensing charge-accumulation circuits and methods
US9164070B2 (en) 2010-06-30 2015-10-20 Life Technologies Corporation Column adc
US9239313B2 (en) 2010-06-30 2016-01-19 Life Technologies Corporation Ion-sensing charge-accumulation circuits and methods
JP2013533483A (en) * 2010-07-03 2013-08-22 ライフ テクノロジーズ コーポレーション Chemically sensitive sensor with lightly doped drain
US9960253B2 (en) 2010-07-03 2018-05-01 Life Technologies Corporation Chemically sensitive sensor with lightly doped drains
US9958414B2 (en) 2010-09-15 2018-05-01 Life Technologies Corporation Apparatus for measuring analytes including chemical sensor array
US9618475B2 (en) 2010-09-15 2017-04-11 Life Technologies Corporation Methods and apparatus for measuring analytes
US9110015B2 (en) 2010-09-24 2015-08-18 Life Technologies Corporation Method and system for delta double sampling
US9970984B2 (en) 2011-12-01 2018-05-15 Life Technologies Corporation Method and apparatus for identifying defects in a chemical sensor array
US10365321B2 (en) 2011-12-01 2019-07-30 Life Technologies Corporation Method and apparatus for identifying defects in a chemical sensor array
US10404249B2 (en) 2012-05-29 2019-09-03 Life Technologies Corporation System for reducing noise in a chemical sensor array
US9270264B2 (en) 2012-05-29 2016-02-23 Life Technologies Corporation System for reducing noise in a chemical sensor array
US9985624B2 (en) 2012-05-29 2018-05-29 Life Technologies Corporation System for reducing noise in a chemical sensor array
US9852919B2 (en) 2013-01-04 2017-12-26 Life Technologies Corporation Methods and systems for point of use removal of sacrificial material
US9841398B2 (en) 2013-01-08 2017-12-12 Life Technologies Corporation Methods for manufacturing well structures for low-noise chemical sensors
US10436742B2 (en) 2013-01-08 2019-10-08 Life Technologies Corporation Methods for manufacturing well structures for low-noise chemical sensors
US9995708B2 (en) 2013-03-13 2018-06-12 Life Technologies Corporation Chemical sensor with sidewall spacer sensor surface
US9835585B2 (en) 2013-03-15 2017-12-05 Life Technologies Corporation Chemical sensor with protruded sensor surface
US9823217B2 (en) 2013-03-15 2017-11-21 Life Technologies Corporation Chemical device with thin conductive element
US10422767B2 (en) 2013-03-15 2019-09-24 Life Technologies Corporation Chemical sensor with consistent sensor surface areas
US9671363B2 (en) 2013-03-15 2017-06-06 Life Technologies Corporation Chemical sensor with consistent sensor surface areas
US10100357B2 (en) 2013-05-09 2018-10-16 Life Technologies Corporation Windowed sequencing
US10458942B2 (en) 2013-06-10 2019-10-29 Life Technologies Corporation Chemical sensor array having multiple sensors per well
US10077472B2 (en) 2014-12-18 2018-09-18 Life Technologies Corporation High data rate integrated circuit with power management
US10379079B2 (en) 2014-12-18 2019-08-13 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays

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