JPH0234936A - Semiconductor device and its manufacture - Google Patents

Semiconductor device and its manufacture

Info

Publication number
JPH0234936A
JPH0234936A JP18371788A JP18371788A JPH0234936A JP H0234936 A JPH0234936 A JP H0234936A JP 18371788 A JP18371788 A JP 18371788A JP 18371788 A JP18371788 A JP 18371788A JP H0234936 A JPH0234936 A JP H0234936A
Authority
JP
Japan
Prior art keywords
gate electrode
resistance
spoiling
respecting
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18371788A
Inventor
Masanori Fukumoto
Yohei Ichikawa
Yoshiyuki Iwata
Kazuhiro Matsuyama
Toshiki Yabu
Mitsuo Yasuhira
Takatoshi Yasui
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Ind Co Ltd filed Critical Matsushita Electric Ind Co Ltd
Priority to JP18371788A priority Critical patent/JPH0234936A/en
Publication of JPH0234936A publication Critical patent/JPH0234936A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4983Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material

Abstract

PURPOSE:To seek to improve the resistance to hot carriers without spoiling performance of an element respecting MOS transistor by so forming a gate electrode as to have different work functions at both ends to the longitudinal direction of a channel. CONSTITUTION:A gate electrode 3 having different work functions at both end to the longitudinal direction of a channel is formed on a gate insulating film 2 formed at the surface of a semiconductor substrate 1, and with this gate electrode 3 as a mask ions are implanted into the semiconductor substrate 1 so as to form sources 7s and 5s and drains 5d and 7d. In the Lightly Doped Drain(LDD) structure by this constitution, the low impurity concentration region with high resistance can be made easy to partially form an inversion layer by changing the work function of the gate electrode 3, and the lowering of mutual conductance can be prevented. Hereby, the resistance to hot carriers can be improved without spoiling the performance of an element respecting a MOS transistor.
JP18371788A 1988-07-25 1988-07-25 Semiconductor device and its manufacture Pending JPH0234936A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18371788A JPH0234936A (en) 1988-07-25 1988-07-25 Semiconductor device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18371788A JPH0234936A (en) 1988-07-25 1988-07-25 Semiconductor device and its manufacture

Publications (1)

Publication Number Publication Date
JPH0234936A true JPH0234936A (en) 1990-02-05

Family

ID=16140727

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18371788A Pending JPH0234936A (en) 1988-07-25 1988-07-25 Semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPH0234936A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59118737A (en) * 1982-12-27 1984-07-09 Sumitomo Chem Co Ltd L-4-cyclopentenone ester
JPH02116171A (en) * 1988-10-25 1990-04-27 Nec Corp Manufacture of mos transistor
US5306655A (en) * 1990-07-24 1994-04-26 Matsushita Electric Industrial Co., Ltd. Structure and method of manufacture for MOS field effect transistor having lightly doped drain and source diffusion regions
US5426327A (en) * 1990-10-05 1995-06-20 Nippon Steel Corporation MOS semiconductor with LDD structure having gate electrode and side spacers of polysilicon with different impurity concentrations
US5466958A (en) * 1992-10-30 1995-11-14 Kabushiki Kaisha Toshiba MOS-type semiconductor device having electrode structure capable of coping with short-channel effect and manufacturing method thereof
EP0856892A2 (en) * 1997-01-30 1998-08-05 Oki Electric Industry Co., Ltd. MOSFET and manufacturing method thereof
WO2009063582A1 (en) * 2007-11-15 2009-05-22 Panasonic Corporation Semiconductor device and method for manufacturing the same

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59118737A (en) * 1982-12-27 1984-07-09 Sumitomo Chem Co Ltd L-4-cyclopentenone ester
JPH02116171A (en) * 1988-10-25 1990-04-27 Nec Corp Manufacture of mos transistor
US5306655A (en) * 1990-07-24 1994-04-26 Matsushita Electric Industrial Co., Ltd. Structure and method of manufacture for MOS field effect transistor having lightly doped drain and source diffusion regions
US5405787A (en) * 1990-07-24 1995-04-11 Matsushita Electric Industrial Co., Ltd. Structure and method of manufacture for MOS field effect transistor having lightly doped drain and source diffusion regions
US5426327A (en) * 1990-10-05 1995-06-20 Nippon Steel Corporation MOS semiconductor with LDD structure having gate electrode and side spacers of polysilicon with different impurity concentrations
US5466958A (en) * 1992-10-30 1995-11-14 Kabushiki Kaisha Toshiba MOS-type semiconductor device having electrode structure capable of coping with short-channel effect and manufacturing method thereof
US5756365A (en) * 1992-10-30 1998-05-26 Kabushiki Kaisha Toshiba Method of manufacturing MOS-type semiconductor device having electrode structure capable of coping with short-channel effects
EP0856892A2 (en) * 1997-01-30 1998-08-05 Oki Electric Industry Co., Ltd. MOSFET and manufacturing method thereof
EP0856892A3 (en) * 1997-01-30 1999-07-14 Oki Electric Industry Co., Ltd. MOSFET and manufacturing method thereof
WO2009063582A1 (en) * 2007-11-15 2009-05-22 Panasonic Corporation Semiconductor device and method for manufacturing the same

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