JPS6395669A - Manufacture of semiconductor integrated circuit device - Google Patents

Manufacture of semiconductor integrated circuit device

Info

Publication number
JPS6395669A
JPS6395669A JP24246886A JP24246886A JPS6395669A JP S6395669 A JPS6395669 A JP S6395669A JP 24246886 A JP24246886 A JP 24246886A JP 24246886 A JP24246886 A JP 24246886A JP S6395669 A JPS6395669 A JP S6395669A
Authority
JP
Japan
Prior art keywords
insulating film
ion implantation
gate electrode
gate insulating
surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24246886A
Other versions
JP2677987B2 (en
Inventor
Hiroyuki Kaimoto
Toshiki Yabu
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Ind Co Ltd filed Critical Matsushita Electric Ind Co Ltd
Priority to JP61242468A priority Critical patent/JP2677987B2/en
Publication of JPS6395669A publication Critical patent/JPS6395669A/en
Application granted granted Critical
Publication of JP2677987B2 publication Critical patent/JP2677987B2/en
Anticipated expiration legal-status Critical
Application status is Expired - Lifetime legal-status Critical

Links

Abstract

PURPOSE: To form transistor structure in symmetry by uniformly implanting ions to the surface of a semiconductor substrate from both the channel width direction and the channel length direction, made perpendicular in the channel width direction and inclined in the channel length direction while using a gate electrode as a mask.
CONSTITUTION: A gate insulating film 2 is formed onto the surface of a semicon ductor substrate 1, a polysilicon film 3 is shaped, and a gate electrode is formed through anisotropic etching. First source region 4s and drain region 4d are shaped through ion implantation, employing the gate electrode as a mask. Ions are implanted at an inclination of 20° to the direction vertical to the surface of the semiconductor substrate at the angle of ion implantation so that an impurity largely intrudes under the gate insulating film 2 at that time (the directions of the arrow A and the arrow B). Second source region 5s and drain region 5d are formed in the same method as mentioned above. The angle of ion implantation is tilted at 7° in order to reduce the quantity of the impurity intruding under the gate insulating film 2 at that time.
COPYRIGHT: (C)1988,JPO&Japio
JP61242468A 1986-10-13 1986-10-13 The method of manufacturing a semiconductor integrated circuit device Expired - Lifetime JP2677987B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61242468A JP2677987B2 (en) 1986-10-13 1986-10-13 The method of manufacturing a semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61242468A JP2677987B2 (en) 1986-10-13 1986-10-13 The method of manufacturing a semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS6395669A true JPS6395669A (en) 1988-04-26
JP2677987B2 JP2677987B2 (en) 1997-11-17

Family

ID=17089529

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61242468A Expired - Lifetime JP2677987B2 (en) 1986-10-13 1986-10-13 The method of manufacturing a semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JP2677987B2 (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63233567A (en) * 1987-03-23 1988-09-29 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor device
JPH01283965A (en) * 1988-05-11 1989-11-15 Fujitsu Ltd Manufacture of mos transistor
JPH02244616A (en) * 1989-03-16 1990-09-28 Mitsubishi Electric Corp Manufacture of semiconductor device
JPH02250331A (en) * 1989-03-24 1990-10-08 Hitachi Ltd Semiconductor device and its manufacture
US5270226A (en) * 1989-04-03 1993-12-14 Matsushita Electric Industrial Co., Ltd. Manufacturing method for LDDFETS using oblique ion implantion technique
EP0696054A1 (en) * 1994-07-04 1996-02-07 SGS-THOMSON MICROELECTRONICS S.r.l. Process for the manufacturing of high-density MOS-technology power devices
US5827774A (en) * 1996-05-31 1998-10-27 Nec Corporation Ion implantation method using tilted ion beam
US6355512B1 (en) 1994-11-11 2002-03-12 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
US6421216B1 (en) 1996-07-16 2002-07-16 Ewd, Llc Resetable overcurrent protection arrangement

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59198763A (en) * 1983-04-27 1984-11-10 Hitachi Ltd Mos type field effect transistor and manufacture thereof

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59198763A (en) * 1983-04-27 1984-11-10 Hitachi Ltd Mos type field effect transistor and manufacture thereof

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63233567A (en) * 1987-03-23 1988-09-29 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor device
JPH01283965A (en) * 1988-05-11 1989-11-15 Fujitsu Ltd Manufacture of mos transistor
JPH02244616A (en) * 1989-03-16 1990-09-28 Mitsubishi Electric Corp Manufacture of semiconductor device
JPH02250331A (en) * 1989-03-24 1990-10-08 Hitachi Ltd Semiconductor device and its manufacture
US5270226A (en) * 1989-04-03 1993-12-14 Matsushita Electric Industrial Co., Ltd. Manufacturing method for LDDFETS using oblique ion implantion technique
EP0696054A1 (en) * 1994-07-04 1996-02-07 SGS-THOMSON MICROELECTRONICS S.r.l. Process for the manufacturing of high-density MOS-technology power devices
US5670392A (en) * 1994-07-04 1997-09-23 Sgs-Thomson Microelectronics S.R.L. Process for manufacturing high-density MOS-technology power devices
US6369425B1 (en) 1994-07-04 2002-04-09 Sgs-Thomson Microelecttronica S.R.L. High-density power device
US6355512B1 (en) 1994-11-11 2002-03-12 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
US5827774A (en) * 1996-05-31 1998-10-27 Nec Corporation Ion implantation method using tilted ion beam
US6421216B1 (en) 1996-07-16 2002-07-16 Ewd, Llc Resetable overcurrent protection arrangement

Also Published As

Publication number Publication date
JP2677987B2 (en) 1997-11-17

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term