JPH02248306A - Production of superconductor thin film - Google Patents
Production of superconductor thin filmInfo
- Publication number
- JPH02248306A JPH02248306A JP6870489A JP6870489A JPH02248306A JP H02248306 A JPH02248306 A JP H02248306A JP 6870489 A JP6870489 A JP 6870489A JP 6870489 A JP6870489 A JP 6870489A JP H02248306 A JPH02248306 A JP H02248306A
- Authority
- JP
- Japan
- Prior art keywords
- superconductor
- substrate
- thin film
- layer
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002887 superconductor Substances 0.000 title claims abstract description 42
- 239000010409 thin film Substances 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000000203 mixture Substances 0.000 claims abstract description 16
- 238000000151 deposition Methods 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 9
- 238000000034 method Methods 0.000 abstract description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 4
- 239000002131 composite material Substances 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 7
- 238000000137 annealing Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052727 yttrium Inorganic materials 0.000 description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 description 1
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野コ
本発明は超伝導体薄膜の製造方法、特にアルミナ等の薄
膜基板上にイツトリウム系等の酸化物超伝導体薄膜を形
成する方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing a superconductor thin film, and particularly to a method for forming an oxide superconductor thin film such as yttrium-based oxide superconductor on a thin film substrate such as alumina.
［従来の技術］
従来のこの種のイツトリウム系酸化物超伝導体薄膜の製
造方法にあっては、アルミナ基板を一定温度、例えば７
００℃（ａｓ−ｓｐｕｔ ｔｅｒｅｄ状態で結晶化し、
超伝導性を示す温度）に保持して、ターゲツト材として
例えばＹＢａ２Ｃｕ３Ｏ７を用いて、スパッタリングを
行うことにより、イツトリウム系の酸化物超伝導体薄膜
（ＹＢａ２Ｃｕ３０７−ｘ）を形成していた。[Prior Art] In the conventional method for manufacturing this type of yttrium-based oxide superconductor thin film, an alumina substrate is heated at a constant temperature, for example,
00°C (crystallized in as-sput tered state,
A yttrium-based oxide superconductor thin film (YBa2Cu307-x) was formed by sputtering using, for example, YBa2Cu3O7 as a target material.
また、この７００°Ｃよりも低い温度、例えは４００℃
で同様にスパッタリングして、その後高温度（約９００
℃）で長時間（約５時間）アニールしていた。アニール
によって結晶化させるものである。Also, temperatures lower than this 700°C, for example 400°C
sputtering in the same way, and then at high temperature (approximately 900℃).
℃) for a long time (about 5 hours). It is crystallized by annealing.
［発明が解決しようとする課題］
しかしながら、このような従来の超伝導体薄膜の製造方
法にあっては、前者は基板上に超伝導体組成物質の薄膜
を高温度で直接被着するものであり、該組成物質が基板
形成物質と被着時に化学反応して例えばＡｌ−Ｂａ系酸
化物を生成してしまう結果、薄膜が超伝導性を示さない
という問題点があった。また、後者にあっては、高温で
のアニール時に同じく薄膜と基板との界面に化学反応に
よる酸化物を生じてしまい超伝導性を損なっているとい
う問題点があった。[Problems to be Solved by the Invention] However, in such conventional methods for producing superconductor thin films, the former method involves directly depositing a thin film of superconductor composition material on a substrate at high temperature. However, there is a problem in that the composition material chemically reacts with the substrate forming material when deposited to produce, for example, an Al--Ba based oxide, resulting in the thin film not exhibiting superconductivity. The latter also has the problem that during high-temperature annealing, oxides are produced at the interface between the thin film and the substrate due to a chemical reaction, impairing superconductivity.
そこで、本発明は、非晶賀状ないし無配向状態の超伝導
組成物質層が黒色または暗緑色を呈していることに着目
してなされたもので、例えば該組成物質層に赤外線を照
射して加熱、溶融した後に急冷、低温アニールを施すこ
とにより、配向性の高い超伝導体薄膜を基板上に形成す
る超伝導体薄膜の製造方法を提供することをその目的と
している。Therefore, the present invention was made by focusing on the fact that a superconducting composition material layer in an amorphous or non-oriented state exhibits a black or dark green color.For example, the composition material layer is heated by irradiating it with infrared rays. The object of the present invention is to provide a method for producing a superconductor thin film in which a highly oriented superconductor thin film is formed on a substrate by melting, followed by rapid cooling and low-temperature annealing.
［課題を解決するための手段］
本発明は、酸化物超伝導体の組成物質の層を薄膜用基板
に該基板との未反応温度において被着することにより、
該基板表面に一定波長範囲の光線を吸収する非晶質状態
の超伝導体組成層を形成する工程と、その一定波長範囲
の光線を該超伝導体組成層に照射することにより、該超
伝導体組成層を半溶融状態とする工程と、この超伝導体
組成層を所定温度に急冷する工程と、その後、上記未反
応温度以下で一定時間この超伝導体組成層を保持するこ
とにより、基板上に超伝導体薄膜を形成する工程と、を
備えた超伝導体薄膜の製造方法である。[Means for Solving the Problems] The present invention provides the following methods: by depositing a layer of a composition material of an oxide superconductor on a thin film substrate at a temperature at which it does not react with the substrate;
The process of forming an amorphous superconductor composition layer that absorbs light in a certain wavelength range on the surface of the substrate, and irradiating the superconductor composition layer with light in a certain wavelength range, makes the superconductor A step of bringing the superconductor composition layer into a semi-molten state, a step of rapidly cooling the superconductor composition layer to a predetermined temperature, and then maintaining the superconductor composition layer for a certain period of time at or below the above-mentioned non-reacting temperature allows the substrate to be heated. A method for producing a superconductor thin film, comprising: forming a superconductor thin film thereon.
［作用］
本発明に係る超伝導体薄膜の製造方法にあっては、例え
ば第１図に示すように基板との反応温度未満（Ｔ Ｉ’
ｃ）で超伝導体組成物質の層を基板上に被着する。この
組成物質層は例えばアモルファス状の結晶構造である。[Function] In the method for producing a superconductor thin film according to the present invention, for example, as shown in FIG.
c) depositing a layer of superconductor composition material on the substrate; This composition material layer has, for example, an amorphous crystal structure.
次に、一定波長範囲の光線、例えば赤外線を一定時間（
ｔ２＋ｔ３）だけ照射することにより、上記組成物質層
のみを加熱して半溶融状態とする。この薄膜組成層のみ
が反応温度以上（７２°Ｃ）にまで加熱されるものであ
る。Next, light of a certain wavelength range, for example infrared rays, is emitted for a certain period of time (
By irradiating for t2+t3), only the composition material layer is heated to a semi-molten state. Only this thin film composition layer is heated to a temperature higher than the reaction temperature (72° C.).
次に、この組成物質層を急冷して超伝導物質の結晶核を
生成する。さらに、上記反応温度より低い温度（７３℃
）にてアニールする。その結果、結晶核を成長させ、超
伝導体薄膜を得る。Next, this composition material layer is rapidly cooled to generate crystal nuclei of the superconducting material. Furthermore, a temperature lower than the above reaction temperature (73°C
). As a result, crystal nuclei grow and a superconductor thin film is obtained.
［発明の効果］
以上説明してきたように、本発明に係る超伝導体薄膜の
製造方法にあっては、超伝導体組成物質が基板形成物質
と化学反応して例えばＡｌ−Ｂａ系酸化物等を生成する
ことはなく、配向性の高い超伝導体薄膜を基板上に形成
することができる。[Effects of the Invention] As explained above, in the method for producing a superconductor thin film according to the present invention, the superconductor composition material chemically reacts with the substrate forming material to form, for example, Al-Ba-based oxides, etc. It is possible to form a highly oriented superconductor thin film on a substrate without producing any.
［実施例］ 以下、本発明に係る実施例について説明する。[Example] Examples according to the present invention will be described below.
第１図は本発明に係る超伝導体薄膜の製造方法における
スパッタリング等の熱処理時間と基板温度との関係を示
すグラフである。FIG. 1 is a graph showing the relationship between heat treatment time such as sputtering and substrate temperature in the method for manufacturing a superconductor thin film according to the present invention.
このグラフ中、ＴＩは基板との反応温度よりも低いスパ
ッタ温度、ｔｌはこの温度ＴＩにおけるスパッタリング
時間、ｔ２はＴＩから上記反応温度よりも高い温度Ｔ２
への上昇時間、ｔ３は該温度Ｔ２での保持時間、Ｔ３は
反応温度より低いアニール温度、ｔ４はＴ２からＴ３へ
の温度下降時間、ｔ５は温度Ｔ３でのアニール時間、を
それぞれ示している。したがって、（ｔ２＋ｔ３）の時
間は一定波長範囲の光線を薄膜形成層に照射している時
間である。In this graph, TI is a sputtering temperature lower than the reaction temperature with the substrate, tl is the sputtering time at this temperature TI, and t2 is a temperature T2 higher than the above reaction temperature from TI.
t3 is the holding time at the temperature T2, T3 is the annealing temperature lower than the reaction temperature, t4 is the temperature drop time from T2 to T3, and t5 is the annealing time at the temperature T3. Therefore, the time (t2+t3) is the time during which the thin film forming layer is irradiated with light having a certain wavelength range.
次表の実施例では、第１図にしたがって熱処理をなして
いる。なお、温度ＴＩでのスパッタリングの条件として
、高周波スパッタリング（出力４０ＯＷ）、放電気体は
、アルゴン（Ａｒ）：酸素（０２）＝１：１とし、真空
容器内の圧力は１ｒｎＴ。In the examples shown in the following table, heat treatment was performed according to FIG. Note that the sputtering conditions at temperature TI were high frequency sputtering (output 40 OW), the discharge electric body was argon (Ar):oxygen (02) = 1:1, and the pressure in the vacuum container was 1 rnT.
ｒｒ、 とする。また、ターゲツト材としてはＹＢａ
２Ｃｕ３Ｏ７等を、基板はグレーズドアルミナ基板等を
用いている。rr, . In addition, YBa is used as a target material.
2Cu3O7 or the like, and the substrate is a glazed alumina substrate or the like.
（以下、余白） （続き）(Hereafter, margin) (continuation)
第１図は本発明の超伝導体薄膜の製造方法の一実施例に
係る熱処理時間と温度との関係を示すグラフである。
特許出願人 三菱金属株式会社FIG. 1 is a graph showing the relationship between heat treatment time and temperature according to an embodiment of the method for manufacturing a superconductor thin film of the present invention. Patent applicant Mitsubishi Metals Corporation
Claims (1)
基板との未反応温度において被着することにより、該基
板表面に一定波長範囲の光線を吸収する非晶質状態の超
伝導体組成層を形成する工程と、 その一定波長範囲の光線を該超伝導体組成層に照射する
ことにより、該超伝導体組成層を半溶融状態とする工程
と、 この超伝導体組成層を所定温度に急冷する工程と、 その後、上記未反応温度以下で一定時間この超伝導体組
成層を保持することにより、基板上に超伝導体薄膜を形
成する工程と、を備えたことを特徴とする超伝導体薄膜
の製造方法。(1) By depositing a layer of an oxide superconductor composition on a thin film substrate at a temperature at which it does not react with the substrate, the surface of the substrate is formed into an amorphous state that absorbs light within a certain wavelength range. a step of forming a conductor composition layer; a step of bringing the superconductor composition layer into a semi-molten state by irradiating the superconductor composition layer with a light beam in a certain wavelength range; and a step of bringing the superconductor composition layer into a semi-molten state; a step of rapidly cooling the superconductor to a predetermined temperature; and a step of forming a superconductor thin film on the substrate by holding the superconductor composition layer for a certain period of time below the unreacted temperature. A method for producing a superconductor thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6870489A JPH02248306A (en) | 1989-03-20 | 1989-03-20 | Production of superconductor thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6870489A JPH02248306A (en) | 1989-03-20 | 1989-03-20 | Production of superconductor thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02248306A true JPH02248306A (en) | 1990-10-04 |
Family
ID=13381426
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6870489A Pending JPH02248306A (en) | 1989-03-20 | 1989-03-20 | Production of superconductor thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02248306A (en) |
-
1989
- 1989-03-20 JP JP6870489A patent/JPH02248306A/en active Pending
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