JPS62205267A - Production of aluminum oxide film - Google Patents
Production of aluminum oxide filmInfo
- Publication number
- JPS62205267A JPS62205267A JP4724886A JP4724886A JPS62205267A JP S62205267 A JPS62205267 A JP S62205267A JP 4724886 A JP4724886 A JP 4724886A JP 4724886 A JP4724886 A JP 4724886A JP S62205267 A JPS62205267 A JP S62205267A
- Authority
- JP
- Japan
- Prior art keywords
- aluminum oxide
- oxide film
- film
- base plate
- formation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 title claims abstract description 48
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 13
- 230000001678 irradiating effect Effects 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 abstract description 18
- 238000000137 annealing Methods 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- 238000010894 electron beam technology Methods 0.000 abstract 1
- 238000007740 vapor deposition Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 40
- 238000010521 absorption reaction Methods 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 8
- 238000000862 absorption spectrum Methods 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000003685 thermal hair damage Effects 0.000 description 2
- 238000007743 anodising Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005536 corrosion prevention Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は酸化アルミニウム膜の製造方法、特に高品質な
酸化アルミニウム膜の製造する方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method for manufacturing an aluminum oxide film, and particularly to a method for manufacturing a high quality aluminum oxide film.
近年、半導体デバイスを始めとする種々の電子部品や光
学素子の分野において酸化アルミニウム膜は広く用いら
れている。その機能も電気的絶縁。In recent years, aluminum oxide films have been widely used in the fields of various electronic components and optical elements including semiconductor devices. Its function is also electrical insulation.
表面保護（腐食防止、耐摩耗など）、光学的機能など幅
広い分野にわたっている。これらの用途のための酸化ア
ルミニウム膜の形成方法は、真空蒸若、スパッタリング
、ＣＶＤ法等の減圧下での薄膜形成法の他、スプレィ法
、ディップ法、塗布法。It covers a wide range of fields such as surface protection (corrosion prevention, wear resistance, etc.) and optical functions. Methods for forming aluminum oxide films for these uses include thin film forming methods under reduced pressure such as vacuum evaporation, sputtering, and CVD methods, as well as spray methods, dipping methods, and coating methods.
陽極酸化法等、多岐にわたる。A wide variety of methods including anodizing.
ところで、物理的、ｘ学的あるいは光学的に安定な酸化
アルミニウム膜を得るためには、上記の形成方法を用い
た薄膜形成工程において成膜温度を高温にするか、もし
くは薄膜形成工程後に形成された酸化アルミニウｔ１膜
を高温度で熱処理する工程が必要である。例えばＣＶＤ
法の場合は７５０℃以上、また高周波スパッタリング法
の場合は４５０℃以上の温度で形成された酸化アルミニ
ウム膜は、多結晶体で、膜中に含まれる水分も少なく、
股の物理的、屏学的諧特性も安定である。しかし、これ
らの温度以下で形成された場合、得られる酸化アルミニ
ウム１摸は非晶質状であり、膜中に水分を多く含んでお
り、弗酸に容易におかされる等。By the way, in order to obtain a physically, chemically or optically stable aluminum oxide film, the film formation temperature must be raised to a high temperature in the thin film formation process using the above-mentioned formation method, or the film must be formed after the thin film formation process. It is necessary to heat-treat the aluminum oxide T1 film at high temperature. For example, CVD
The aluminum oxide film formed at a temperature of 750°C or higher in the case of the method and 450°C or higher in the case of the high-frequency sputtering method is polycrystalline and contains little moisture in the film.
The physical and mechanical characteristics of the crotch are also stable. However, when formed at temperatures below these temperatures, the resulting aluminum oxide sample is amorphous, contains a large amount of water in the film, and is easily affected by hydrofluoric acid.
物理的、化学的に不安定である。これらの不安定性は実
際の応用面では膜のはがれ、耐候性の劣化し、耐摩耗性
の不足、電気特性あるいは光学特性の劣化などにつなが
る。Physically and chemically unstable. In actual applications, these instabilities lead to film peeling, deterioration of weather resistance, lack of wear resistance, and deterioration of electrical or optical properties.
従って、高品質の酸化アルミニウム膜が必要とされる場
合には、膜の形成工程において成膜温度を高温にするか
、あるいは形成工程後に電気炉等を用いて基板とともに
得られた酸化アルミニウム膜を高温にさらす熱処理工程
が必要となる。Therefore, if a high-quality aluminum oxide film is required, the film formation temperature should be raised to a high temperature during the film formation process, or the aluminum oxide film obtained together with the substrate should be removed using an electric furnace or the like after the formation process. A heat treatment process involving exposure to high temperatures is required.
上述の高温度を必要とする工程は、エネルギ。 The processes mentioned above that require high temperatures require energy.
時間の点から製造上不利となるばかりでなく、熱による
基板の損傷の点でも問題となる１例えば半導体素子上に
酸化アルミニウム薄膜層を形成する場合、通常の電気炉
等による熱処理では半導体基板全体が加熱されるために
拡散深さが深くなる欠点があり、浅い拡散を必要とする
半導体素子の場合、熱処理は困難であった。また有機材
料や融点の低い金属等の熱損傷を受けやすい材料を有す
る基板上に酸化アルミニウム薄膜層を形成しようとする
場合も同様の問題点があった。Not only is it disadvantageous in terms of manufacturing time, but it also poses a problem in terms of damage to the substrate due to heat.1 For example, when forming an aluminum oxide thin film layer on a semiconductor element, heat treatment using a normal electric furnace, etc. This has the disadvantage that the diffusion depth becomes deep because of the heating, and heat treatment has been difficult for semiconductor devices that require shallow diffusion. Similar problems also occur when attempting to form an aluminum oxide thin film layer on a substrate having a material susceptible to thermal damage, such as an organic material or a metal with a low melting point.
本発明の目的は６、従来の酸化アルミニウム膜の製造方
法の有する」−記問題を解決し、基板を高温にさらすこ
となく高品質な酸化アルミニウムｌＩ’Ｊを形成するこ
とのできる製造方法を提供することである。The object of the present invention is to provide a manufacturing method that solves the above problems of conventional aluminum oxide film manufacturing methods and can form high-quality aluminum oxide lI'J without exposing the substrate to high temperatures. It is to be.
本発明は、基板上に酸化アルミニウム薄膜層を形成する
工程において、酸化アルミニウム膜の形成中もしくは形
成後に、１１〜１７趨の波長に強度ピークを有する光エ
ネルギを酸化アルミニウム膜に照射することにより、酸
化アルミニウム膜の光アニールを行なうことを特徴とす
る。これにより基板部分を長時間高温にさらすことなく
、酸化アルミニウム膜のみを効果的にアニールして高品
質の酸化アルミニウム膜が得られる。In the process of forming an aluminum oxide thin film layer on a substrate, the present invention irradiates the aluminum oxide film with light energy having an intensity peak at a wavelength of 11 to 17 during or after the formation of the aluminum oxide film. It is characterized by photo-annealing the aluminum oxide film. As a result, a high quality aluminum oxide film can be obtained by effectively annealing only the aluminum oxide film without exposing the substrate portion to high temperatures for a long period of time.
以下、実施例を用いて本発明の詳細な説明する。 Hereinafter, the present invention will be explained in detail using Examples.
面方位（１００）比抵抗５０Ω・備のＰ型シリコン基板
上に電子ビーム蒸着法により約１−の酸化アルミニウム
膜を形成した。膜形成時の基板温度は１５０℃である。An approximately 1- aluminum oxide film was formed by electron beam evaporation on a P-type silicon substrate with a plane orientation (100) and a specific resistance of 50 Ω. The substrate temperature during film formation was 150°C.
第２図はこの酸化アルミニウム膜の赤外光領域における
吸収スペクトルを示したものであり、２．９− を中心
とした幅広い吸収帯と１３−を中心とした吸収帯がある
ことが分かる。 １３ｔｍ付近；の吸収帯は酸化アルミ
ニウム固有のものであり。FIG. 2 shows the absorption spectrum of this aluminum oxide film in the infrared light region, and it can be seen that there is a broad absorption band centered at 2.9- and an absorption band centered at 13-. The absorption band around 13 tm is unique to aluminum oxide.
また２、９ＩＪＪｎ を中心とした吸収帯は酸化アルミ
ニウム膜に含まれる水分を反映したものである。なお、
２．９−を中心とした吸収帯からすそを引く幅広い吸収
帯は非晶質の酸化アルミニウム膜においてしばしば１ｍ
？Ｊされるものである。Furthermore, the absorption band centered around 2,9IJJn reflects the moisture contained in the aluminum oxide film. In addition,
In amorphous aluminum oxide films, the broad absorption band extending from the absorption band centered at 2.9- is often 1 m.
? It is something that is subject to J.
この後、酸化アルミニウム膜に １３ｃｏ、を発振源と
したレーザー光を間欠的に照射することにより、光アニ
ールを施した。１ｆｆｃＱ、レーザー光は１１．４μ謂
付近に強いピークを持ち、第２図に示した酸化アルミニ
ウムの固有吸収帯内にその波長が位置するため、照射さ
れたレーザー光は酸化アルミニウム膜中でそのエネルギ
のほぼすべてが吸収され、熱に変換される。本実施例で
は、エネルギ密度２Ｊ／ｃｄにて１２回の１３ＣＯ□レ
ーザー光パルス照射を行った。なお、゛基板であるシリ
コンウェハの温度上昇は認められなかった。Thereafter, the aluminum oxide film was optically annealed by intermittently irradiating the aluminum oxide film with laser light using 13co as an oscillation source. 1ffcQ, the laser beam has a strong peak around 11.4μ, and its wavelength is located within the unique absorption band of aluminum oxide shown in Figure 2, so the energy of the irradiated laser beam is absorbed in the aluminum oxide film. Almost all of it is absorbed and converted into heat. In this example, 13 CO□ laser light pulse irradiation was performed 12 times at an energy density of 2 J/cd. Note that no increase in temperature of the silicon wafer, which is the substrate, was observed.
第１図は光アニール後の赤外吸収スペクトルを示す、同
図において、２．９−を中心とした水分を示すピークお
よびその両側の幅広い吸収帯が消失し、１３μ層を中心
とした酸化アルミニウム固有の吸収帯のみが現れている
ことが分かる。Figure 1 shows the infrared absorption spectrum after photoannealing. In the same figure, the peak indicating moisture centered at 2.9- and the broad absorption bands on both sides thereof disappear, and the aluminum oxide centered at the 13μ layer disappears. It can be seen that only the unique absorption band appears.
第３図は上記レーザー光照射を施した酸化アルミニウム
膜と同様の条件で蒸着を行った酸化アルミニウム膜を、
通常の電気炉を用いて大気中８００℃で１時間熱処理し
た後の赤外吸収スペクトルを示したものである。第３図
においても第１図と同様に、 ２．９．を中心としたピ
ークおよびその両側の幅広い吸収帯が消失していること
が分かる。Figure 3 shows an aluminum oxide film deposited under the same conditions as the aluminum oxide film irradiated with the laser beam described above.
This figure shows an infrared absorption spectrum after heat treatment at 800° C. for 1 hour in the air using an ordinary electric furnace. In Fig. 3, as in Fig. 1, 2.9. It can be seen that the peak centered on and the broad absorption bands on both sides have disappeared.
従って、第１図および第３図から酸化アルミニウム膜に
１３ｃｏ、レーザー光を２Ｊ／ｆｆｌのエネルギ密度で
１２回のパルス照射することにより、基板を高温にさら
すことなく、高品質な酸化アルミニウム膜が得られるこ
とが分かる。また、そのアニール効果は８００℃で１時
間の熱処理と同等のものであることが分かった。Therefore, as shown in Figures 1 and 3, by irradiating the aluminum oxide film with 12 pulses of 13CO laser light at an energy density of 2J/ffl, a high quality aluminum oxide film can be produced without exposing the substrate to high temperatures. You can see what you can get. Further, it was found that the annealing effect was equivalent to that of heat treatment at 800° C. for 1 hour.
本発明によれば、光源として１３ｃｏ□ レーザー光以
外にも酸化アルミニウム固有の吸収帯に対応する１１〜
１７−の間に強度ピークを持つ強光エネルギを用いるこ
とによっても同様の効果が期待できる。According to the present invention, as a light source, in addition to 13co□ laser light, 11~
A similar effect can be expected by using strong optical energy having an intensity peak between 17 and 17.
また１、これらレーザー光あるいは強光エネルギは、酸
化アルミニウム膜の形成後のみならず、膜形成中に照射
しても同様の効果が期待できる。Further, 1. Similar effects can be expected when these laser beams or intense light energy are irradiated not only after the aluminum oxide film is formed but also during the film formation.
このように本発明によれば、基板を高温にさらすことな
く基板上に高品質の酸化アルミニウム膜を成形すること
が可能となり、基板の熱損傷の低減、熱処理工程の短縮
等の効果が得られる。As described above, according to the present invention, it is possible to form a high-quality aluminum oxide film on a substrate without exposing the substrate to high temperatures, resulting in effects such as reducing thermal damage to the substrate and shortening the heat treatment process. .
第１図は本発明の一実施例により得られた酸化アルミニ
ウム膜の赤外吸収スペクトルを示す図。
第２図は本発明において光アニールを施す前の酸化アル
ミニウム膜の赤外吸収スペクトルを示す図、第３図は電
気炉による熱処理後の酸化アルミニウム膜の赤外吸収ス
ペクトルを示す図である。
闘λ乏収モ警シ”＜’ｉｎン 。
シフｉ−収申（・ん）FIG. 1 is a diagram showing an infrared absorption spectrum of an aluminum oxide film obtained according to an example of the present invention. FIG. 2 is a diagram showing an infrared absorption spectrum of an aluminum oxide film before photoannealing in the present invention, and FIG. 3 is a diagram showing an infrared absorption spectrum of an aluminum oxide film after heat treatment in an electric furnace. Fight λ Poor income police shi”＜'inn.
Claims (1)
に、１１μｍから１７μｍの間の波長に強度ピークを有
する光エネルギを前記酸化アルミニウム膜に照射するこ
とにより、前記酸化アルミニウム膜の光アニールを行な
うことを特徴とする酸化アルミニウム膜の製造方法。During or after the formation of the aluminum oxide film on the substrate, the aluminum oxide film is photoannealed by irradiating the aluminum oxide film with light energy having an intensity peak at a wavelength between 11 μm and 17 μm. Characteristic method for producing aluminum oxide film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4724886A JPS62205267A (en) | 1986-03-06 | 1986-03-06 | Production of aluminum oxide film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4724886A JPS62205267A (en) | 1986-03-06 | 1986-03-06 | Production of aluminum oxide film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62205267A true JPS62205267A (en) | 1987-09-09 |
Family
ID=12769945
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4724886A Pending JPS62205267A (en) | 1986-03-06 | 1986-03-06 | Production of aluminum oxide film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62205267A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02120803A (en) * | 1988-10-31 | 1990-05-08 | Nippon Electric Glass Co Ltd | Treatment of multilayered interference filter film |
| CN100362420C (en) * | 2005-07-27 | 2008-01-16 | 大连理工大学 | Method for improving optical characteristics of rare earth mixed aluminum oxide thin film utilizing laser annealing |
| JP2010045752A (en) * | 2008-08-12 | 2010-02-25 | Tatung Univ | High frequency surface acoustic wave device and substrate thereof |
-
1986
- 1986-03-06 JP JP4724886A patent/JPS62205267A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02120803A (en) * | 1988-10-31 | 1990-05-08 | Nippon Electric Glass Co Ltd | Treatment of multilayered interference filter film |
| CN100362420C (en) * | 2005-07-27 | 2008-01-16 | 大连理工大学 | Method for improving optical characteristics of rare earth mixed aluminum oxide thin film utilizing laser annealing |
| JP2010045752A (en) * | 2008-08-12 | 2010-02-25 | Tatung Univ | High frequency surface acoustic wave device and substrate thereof |
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