KR970063794A - Solution growth method CdTe / CdS solar cell fabrication method using CdS thin film - Google Patents
Solution growth method CdTe / CdS solar cell fabrication method using CdS thin film Download PDFInfo
- Publication number
- KR970063794A KR970063794A KR1019960004660A KR19960004660A KR970063794A KR 970063794 A KR970063794 A KR 970063794A KR 1019960004660 A KR1019960004660 A KR 1019960004660A KR 19960004660 A KR19960004660 A KR 19960004660A KR 970063794 A KR970063794 A KR 970063794A
- Authority
- KR
- South Korea
- Prior art keywords
- thin film
- cds
- cdte
- solar cell
- manufacturing
- Prior art date
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- 229910004613 CdTe Inorganic materials 0.000 title claims abstract description 19
- 239000010409 thin film Substances 0.000 title claims abstract 24
- 238000000034 method Methods 0.000 title claims abstract 16
- 238000004519 manufacturing process Methods 0.000 title claims abstract 7
- 229910006404 SnO 2 Inorganic materials 0.000 claims abstract 4
- NWZSZGALRFJKBT-KNIFDHDWSA-N (2s)-2,6-diaminohexanoic acid;(2s)-2-hydroxybutanedioic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O.NCCCC[C@H](N)C(O)=O NWZSZGALRFJKBT-KNIFDHDWSA-N 0.000 claims abstract 2
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 claims abstract 2
- 229910052802 copper Inorganic materials 0.000 claims abstract 2
- 239000010408 film Substances 0.000 claims abstract 2
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 claims abstract 2
- 239000011521 glass Substances 0.000 claims abstract 2
- 229910052737 gold Inorganic materials 0.000 claims abstract 2
- IKDUDTNKRLTJSI-UHFFFAOYSA-N hydrazine monohydrate Substances O.NN IKDUDTNKRLTJSI-UHFFFAOYSA-N 0.000 claims abstract 2
- 238000004544 sputter deposition Methods 0.000 claims abstract 2
- 239000000758 substrate Substances 0.000 claims abstract 2
- 238000010438 heat treatment Methods 0.000 claims 4
- 239000000203 mixture Substances 0.000 claims 2
- 238000003486 chemical etching Methods 0.000 claims 1
- 239000003638 chemical reducing agent Substances 0.000 claims 1
- 238000001035 drying Methods 0.000 claims 1
- 238000005566 electron beam evaporation Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000012299 nitrogen atmosphere Substances 0.000 claims 1
- 239000003960 organic solvent Substances 0.000 claims 1
- 238000004151 rapid thermal annealing Methods 0.000 claims 1
- 238000002207 thermal evaporation Methods 0.000 claims 1
- 238000005406 washing Methods 0.000 claims 1
- 238000010894 electron beam technology Methods 0.000 abstract 2
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
본 발명은 ITO(In2O3 ·SnO2) 또는 SnO2: F 투명전도성 유리기판에 특정조건의 용액성장법으로 CdS박막을 제조하여 열처리한 다음, EB(Electron Beam)법, 가열증착(Thermal Evaporation)법, 스퍼터링(Sputtering)법등의 방법으로 CdTe 박막을 CdS 박막위에 형성시킨 후, 열처리를 하고 2~20%의 크롬산용액으로 화학적 식각처리를 행하고 히드라진 수화물로 산화막을 제거한 다음, 세정하고 건조하여 Au 또는 Cu/Au를 증착시킨 후 열처리함을 특징으로하는 용액성장법 CdS 박막을 이용한 CdTe/CdS 태양전지의 제조방법에 관한 것으로, 에너지 변환 효율이 7% 이상을 나타내고 저렴한 제조원가가 소요되는 CdS 박막을 이용한 CdTe/CdS 태양전지를 용이하게 제조할 수 있었다.The present invention relates to a method of manufacturing a CdS thin film on a transparent conductive glass substrate made of ITO (In 2 O 3 .SnO 2 ) or SnO 2 : F by a solution growth method under specific conditions. The CdS thin film is annealed and then subjected to electron beam (EB) A CdTe thin film is formed on a CdS thin film by a method such as evaporation, sputtering or the like. Then, the CdTe thin film is thermally treated, chemically etched with a 2 to 20% chromic acid solution, and the oxide film is removed with hydrazine hydrate, Au or Cu / Au is deposited and then heat-treated. The present invention relates to a method of manufacturing a CdTe / CdS solar cell using a CdS thin film. The CdS thin film exhibits energy conversion efficiency of 7% CdTe / CdS solar cell using the same method.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.
제1도는 본 발명의 발명에 따라 제조된 CdTe/CdS 태양전지의 단면도이다.FIG. 1 is a cross-sectional view of a CdTe / CdS solar cell manufactured according to the present invention.
Claims (9)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960004660A KR100213831B1 (en) | 1996-02-26 | 1996-02-26 | Fabricating method of cdte/cds solar cells using cds thin film made by chemical solution deposition method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960004660A KR100213831B1 (en) | 1996-02-26 | 1996-02-26 | Fabricating method of cdte/cds solar cells using cds thin film made by chemical solution deposition method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR970063794A true KR970063794A (en) | 1997-09-12 |
| KR100213831B1 KR100213831B1 (en) | 1999-08-02 |
Family
ID=19451791
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019960004660A KR100213831B1 (en) | 1996-02-26 | 1996-02-26 | Fabricating method of cdte/cds solar cells using cds thin film made by chemical solution deposition method |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR100213831B1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010107798A (en) * | 2001-09-04 | 2001-12-07 | 재 형 이 | Preparation method of the low resistive Cd1-xZnxS thin films using solution growth |
-
1996
- 1996-02-26 KR KR1019960004660A patent/KR100213831B1/en not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010107798A (en) * | 2001-09-04 | 2001-12-07 | 재 형 이 | Preparation method of the low resistive Cd1-xZnxS thin films using solution growth |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100213831B1 (en) | 1999-08-02 |
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| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| EXPY | Expiration of term |