JPH0223519B2 - - Google Patents
Info
- Publication number
- JPH0223519B2 JPH0223519B2 JP59182435A JP18243584A JPH0223519B2 JP H0223519 B2 JPH0223519 B2 JP H0223519B2 JP 59182435 A JP59182435 A JP 59182435A JP 18243584 A JP18243584 A JP 18243584A JP H0223519 B2 JPH0223519 B2 JP H0223519B2
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- single crystal
- raw material
- material melt
- partition plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18243584A JPS6158884A (ja) | 1984-08-31 | 1984-08-31 | 単結晶の育成方法 |
EP84111305A EP0173764B1 (en) | 1984-08-31 | 1984-09-21 | Single crystal growing method and apparatus |
DE8484111305T DE3480721D1 (de) | 1984-08-31 | 1984-09-21 | Verfahren und vorrichtung zur herstellung von einkristallen. |
US06/675,409 US4874458A (en) | 1984-08-31 | 1984-11-27 | Single crystal growing method having improved melt control |
US07/102,373 US4832922A (en) | 1984-08-31 | 1987-09-29 | Single crystal growing method and apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18243584A JPS6158884A (ja) | 1984-08-31 | 1984-08-31 | 単結晶の育成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6158884A JPS6158884A (ja) | 1986-03-26 |
JPH0223519B2 true JPH0223519B2 (enrdf_load_stackoverflow) | 1990-05-24 |
Family
ID=16118216
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18243584A Granted JPS6158884A (ja) | 1984-08-31 | 1984-08-31 | 単結晶の育成方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6158884A (enrdf_load_stackoverflow) |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB8307023D0 (en) * | 1983-03-15 | 1983-04-20 | Minnesota Mining & Mfg | Dye bleach system |
-
1984
- 1984-08-31 JP JP18243584A patent/JPS6158884A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6158884A (ja) | 1986-03-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4874458A (en) | Single crystal growing method having improved melt control | |
JPH03122097A (ja) | 単結晶の2‐6族または3‐5族化合物の製造法及びそれより作られる製品 | |
JP2008105896A (ja) | SiC単結晶の製造方法 | |
US5047113A (en) | Method for directional solidification of single crystals | |
JP2003286024A (ja) | 一方向凝固シリコンインゴット及びこの製造方法並びにシリコン板及び太陽電池用基板及びスパッタリング用ターゲット素材 | |
JP2529934B2 (ja) | 単結晶の製造方法 | |
JPS6117798B2 (enrdf_load_stackoverflow) | ||
JPH0223519B2 (enrdf_load_stackoverflow) | ||
JPH11147785A (ja) | 単結晶の製造方法 | |
JP2758038B2 (ja) | 単結晶製造装置 | |
JP3018738B2 (ja) | 単結晶製造装置 | |
JP2734820B2 (ja) | 化合物半導体単結晶の製造方法 | |
JPH0223520B2 (enrdf_load_stackoverflow) | ||
JP3042168B2 (ja) | 単結晶製造装置 | |
JP2542434B2 (ja) | 化合物半導体結晶の製造方法および製造装置 | |
JPH03193689A (ja) | 化合物半導体の結晶製造方法 | |
JPS60122791A (ja) | 液体封止結晶引上方法 | |
JPS6217496Y2 (enrdf_load_stackoverflow) | ||
JP2700145B2 (ja) | 化合物半導体単結晶の製造方法 | |
JPS63107887A (ja) | 単結晶引上げ用るつぼ | |
JPH11130579A (ja) | 化合物半導体単結晶の製造方法及びその製造装置 | |
JPH0243718B2 (enrdf_load_stackoverflow) | ||
JPS62119198A (ja) | 磁場印加単結晶回転引き上げ装置 | |
JP2637210B2 (ja) | 単結晶成長方法及び装置 | |
JPS62223088A (ja) | 化合物単結晶の育成方法 |