JPH0243718B2 - - Google Patents

Info

Publication number
JPH0243718B2
JPH0243718B2 JP57171212A JP17121282A JPH0243718B2 JP H0243718 B2 JPH0243718 B2 JP H0243718B2 JP 57171212 A JP57171212 A JP 57171212A JP 17121282 A JP17121282 A JP 17121282A JP H0243718 B2 JPH0243718 B2 JP H0243718B2
Authority
JP
Japan
Prior art keywords
crucible
melt
crystal
partition wall
thermal convection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57171212A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5964590A (ja
Inventor
Akira Oosawa
Koichiro Pponda
Ritsuo Takizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17121282A priority Critical patent/JPS5964590A/ja
Publication of JPS5964590A publication Critical patent/JPS5964590A/ja
Publication of JPH0243718B2 publication Critical patent/JPH0243718B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP17121282A 1982-09-30 1982-09-30 結晶成長用坩堝 Granted JPS5964590A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17121282A JPS5964590A (ja) 1982-09-30 1982-09-30 結晶成長用坩堝

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17121282A JPS5964590A (ja) 1982-09-30 1982-09-30 結晶成長用坩堝

Publications (2)

Publication Number Publication Date
JPS5964590A JPS5964590A (ja) 1984-04-12
JPH0243718B2 true JPH0243718B2 (enrdf_load_stackoverflow) 1990-10-01

Family

ID=15919110

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17121282A Granted JPS5964590A (ja) 1982-09-30 1982-09-30 結晶成長用坩堝

Country Status (1)

Country Link
JP (1) JPS5964590A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0925192A (ja) * 1995-07-07 1997-01-28 Nec Corp 単結晶育成用るつぼおよび単結晶育成法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5891097A (ja) * 1981-11-24 1983-05-30 Hitachi Ltd 単結晶製造装置

Also Published As

Publication number Publication date
JPS5964590A (ja) 1984-04-12

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