JPH0223021B2 - - Google Patents
Info
- Publication number
- JPH0223021B2 JPH0223021B2 JP58070233A JP7023383A JPH0223021B2 JP H0223021 B2 JPH0223021 B2 JP H0223021B2 JP 58070233 A JP58070233 A JP 58070233A JP 7023383 A JP7023383 A JP 7023383A JP H0223021 B2 JPH0223021 B2 JP H0223021B2
- Authority
- JP
- Japan
- Prior art keywords
- ions
- gas chamber
- target material
- energy
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Plasma Technology (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58070233A JPS59196600A (ja) | 1983-04-21 | 1983-04-21 | 中性粒子注入法およびその装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58070233A JPS59196600A (ja) | 1983-04-21 | 1983-04-21 | 中性粒子注入法およびその装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59196600A JPS59196600A (ja) | 1984-11-07 |
JPH0223021B2 true JPH0223021B2 (enrdf_load_stackoverflow) | 1990-05-22 |
Family
ID=13425637
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58070233A Granted JPS59196600A (ja) | 1983-04-21 | 1983-04-21 | 中性粒子注入法およびその装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59196600A (enrdf_load_stackoverflow) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63126220A (ja) * | 1986-11-14 | 1988-05-30 | Mitsubishi Electric Corp | 不純物添加方法 |
JPS63166221A (ja) * | 1986-12-27 | 1988-07-09 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JPH02102654U (enrdf_load_stackoverflow) * | 1989-02-02 | 1990-08-15 | ||
FR2966305B1 (fr) * | 2010-10-15 | 2013-07-12 | Commissariat Energie Atomique | Structure acoustique heterogene formee a partir d'un materiau homogene |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4135097A (en) * | 1977-05-05 | 1979-01-16 | International Business Machines Corporation | Ion implantation apparatus for controlling the surface potential of a target surface |
FR2490873A1 (fr) * | 1980-09-24 | 1982-03-26 | Varian Associates | Procede et dispositif destines a produire une neutralisation amelioree d'un faisceau d'ions positifs |
-
1983
- 1983-04-21 JP JP58070233A patent/JPS59196600A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS59196600A (ja) | 1984-11-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2018507506A (ja) | イオン注入用の複合静電レンズシステム | |
JPS62502925A (ja) | 入射角を一定にして高電流イオンビ−ムを走査する装置 | |
KR100318872B1 (ko) | 이온빔주입기및이온빔지향방법 | |
KR101702908B1 (ko) | 조절 가능한 루버드된 플라즈마 일렉트론 플루드 외피 | |
JPH0223021B2 (enrdf_load_stackoverflow) | ||
JPH05106037A (ja) | イオン注入装置及びその制御方法 | |
JPH0361303B2 (enrdf_load_stackoverflow) | ||
US4881010A (en) | Ion implantation method and apparatus | |
JP3460242B2 (ja) | 負イオン注入装置 | |
WO2005117059A1 (ja) | 電荷中和装置 | |
JP2756704B2 (ja) | イオンビーム照射装置における電荷中和装置 | |
JP3460241B2 (ja) | 負イオン注入装置 | |
MATSUDA et al. | Industrial Aspects of Ion-Implantation Equipment and Ion Beam Generation | |
JP3001163B2 (ja) | イオン処理装置 | |
JPS63230875A (ja) | イオンビ−ム照射装置 | |
Nagao et al. | Development of plasma flood gun for gen 5.5 implanter | |
JPH0754918Y2 (ja) | エレクトロンシャワー装置 | |
JP3105931B2 (ja) | 電子ビーム照射装置及び電子ビーム照射方法 | |
JP2917627B2 (ja) | イオン注入装置 | |
JPH07169434A (ja) | イオン注入装置 | |
JPH05190134A (ja) | イオン注入装置およびその注入方法 | |
JPH06196122A (ja) | 負イオン注入装置 | |
JP2663564B2 (ja) | イオンビーム照射装置 | |
JPS63230876A (ja) | イオンビ−ム照射装置 | |
JPS61203553A (ja) | イオン注入装置 |