JPH0222538B2 - - Google Patents

Info

Publication number
JPH0222538B2
JPH0222538B2 JP56009936A JP993681A JPH0222538B2 JP H0222538 B2 JPH0222538 B2 JP H0222538B2 JP 56009936 A JP56009936 A JP 56009936A JP 993681 A JP993681 A JP 993681A JP H0222538 B2 JPH0222538 B2 JP H0222538B2
Authority
JP
Japan
Prior art keywords
sic
gas
etching
ion beam
etching rate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56009936A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57124438A (en
Inventor
Susumu Nanba
Hiroaki Aritome
Shinji Matsui
Tosha Yamato
Shinya Mizuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RIKEN
Original Assignee
RIKEN
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RIKEN filed Critical RIKEN
Priority to JP993681A priority Critical patent/JPS57124438A/ja
Publication of JPS57124438A publication Critical patent/JPS57124438A/ja
Publication of JPH0222538B2 publication Critical patent/JPH0222538B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
JP993681A 1981-01-26 1981-01-26 Ion beam etching for silicon carbide Granted JPS57124438A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP993681A JPS57124438A (en) 1981-01-26 1981-01-26 Ion beam etching for silicon carbide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP993681A JPS57124438A (en) 1981-01-26 1981-01-26 Ion beam etching for silicon carbide

Publications (2)

Publication Number Publication Date
JPS57124438A JPS57124438A (en) 1982-08-03
JPH0222538B2 true JPH0222538B2 (en, 2012) 1990-05-18

Family

ID=11733905

Family Applications (1)

Application Number Title Priority Date Filing Date
JP993681A Granted JPS57124438A (en) 1981-01-26 1981-01-26 Ion beam etching for silicon carbide

Country Status (1)

Country Link
JP (1) JPS57124438A (en, 2012)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60180124A (ja) * 1984-02-27 1985-09-13 Nippon Telegr & Teleph Corp <Ntt> イオンビ−ムエツチング法
JPS61150272A (ja) * 1984-12-24 1986-07-08 Sharp Corp 炭化珪素半導体素子の製造方法
JPS62216335A (ja) * 1986-03-18 1987-09-22 Fujitsu Ltd ドライエツチング方法
JP2661390B2 (ja) * 1991-03-22 1997-10-08 株式会社島津製作所 ＳｉＣのエッチング方法
US5571374A (en) * 1995-10-02 1996-11-05 Motorola Method of etching silicon carbide
JP5047133B2 (ja) 2008-11-19 2012-10-10 昭和電工株式会社 半導体装置の製造方法
JP5643679B2 (ja) * 2011-03-02 2014-12-17 大陽日酸株式会社 炭化珪素の除去方法
JP6570045B2 (ja) * 2017-11-07 2019-09-04 株式会社ハイシック 化合物半導体ウエハの加工方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5353263A (en) * 1976-10-26 1978-05-15 Toshiba Corp Manufacture of semiconductor element
JPS5944770B2 (ja) * 1980-07-25 1984-11-01 三菱電機株式会社 プラズマｃｖｄ用反応器の洗浄方法

Also Published As

Publication number Publication date
JPS57124438A (en) 1982-08-03

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