JPH0220137B2 - - Google Patents
Info
- Publication number
- JPH0220137B2 JPH0220137B2 JP58235326A JP23532683A JPH0220137B2 JP H0220137 B2 JPH0220137 B2 JP H0220137B2 JP 58235326 A JP58235326 A JP 58235326A JP 23532683 A JP23532683 A JP 23532683A JP H0220137 B2 JPH0220137 B2 JP H0220137B2
- Authority
- JP
- Japan
- Prior art keywords
- laser
- laser beam
- silicon layer
- total reflection
- reflection mirror
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58235326A JPS60126840A (ja) | 1983-12-13 | 1983-12-13 | Ｓｏｉ形成用レーザ照射方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58235326A JPS60126840A (ja) | 1983-12-13 | 1983-12-13 | Ｓｏｉ形成用レーザ照射方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60126840A JPS60126840A (ja) | 1985-07-06 |
| JPH0220137B2 true JPH0220137B2 (enExample) | 1990-05-08 |
Family
ID=16984445
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58235326A Granted JPS60126840A (ja) | 1983-12-13 | 1983-12-13 | Ｓｏｉ形成用レーザ照射方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60126840A (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2605090B2 (ja) * | 1988-03-28 | 1997-04-30 | 東京エレクトロン株式会社 | ビームアニール装置 |
| JPH01246829A (ja) * | 1988-03-28 | 1989-10-02 | Tokyo Electron Ltd | ビームアニール装置 |
| US6977775B2 (en) | 2002-05-17 | 2005-12-20 | Sharp Kabushiki Kaisha | Method and apparatus for crystallizing semiconductor with laser beams |
| JP2004103628A (ja) * | 2002-09-05 | 2004-04-02 | Hitachi Ltd | レーザアニール装置及びｔｆｔ基板のレーザアニール方法 |
| WO2005124842A1 (en) * | 2004-06-18 | 2005-12-29 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation method, laser irradiation apparatus, and method for manufacturing semiconductor device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5472489U (enExample) * | 1977-11-01 | 1979-05-23 | ||
| JPS56114390A (en) * | 1980-02-15 | 1981-09-08 | Sumitomo Electric Ind Ltd | Laser apparatus |
| JPS57128024A (en) * | 1981-01-30 | 1982-08-09 | Fujitsu Ltd | Single crystallization for non-single crystalline semiconductor layer |
-
1983
- 1983-12-13 JP JP58235326A patent/JPS60126840A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60126840A (ja) | 1985-07-06 |
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