JPH0571553B2 - - Google Patents
Info
- Publication number
- JPH0571553B2 JPH0571553B2 JP8929788A JP8929788A JPH0571553B2 JP H0571553 B2 JPH0571553 B2 JP H0571553B2 JP 8929788 A JP8929788 A JP 8929788A JP 8929788 A JP8929788 A JP 8929788A JP H0571553 B2 JPH0571553 B2 JP H0571553B2
- Authority
- JP
- Japan
- Prior art keywords
- laser beam
- semiconductor
- single crystal
- light
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 53
- 239000013078 crystal Substances 0.000 claims description 39
- 238000001069 Raman spectroscopy Methods 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 24
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 230000008018 melting Effects 0.000 claims description 10
- 238000002844 melting Methods 0.000 claims description 10
- 239000010410 layer Substances 0.000 description 32
- 239000000758 substrate Substances 0.000 description 28
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 17
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 15
- 230000010287 polarization Effects 0.000 description 13
- 238000012545 processing Methods 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000012212 insulator Substances 0.000 description 7
- 238000001953 recrystallisation Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000007711 solidification Methods 0.000 description 6
- 230000008023 solidification Effects 0.000 description 6
- 238000005259 measurement Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 235000002198 Annona diversifolia Nutrition 0.000 description 1
- 241000282842 Lama glama Species 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8929788A JPH01261292A (ja) | 1988-04-13 | 1988-04-13 | 半導体単結晶膜の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8929788A JPH01261292A (ja) | 1988-04-13 | 1988-04-13 | 半導体単結晶膜の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01261292A JPH01261292A (ja) | 1989-10-18 |
| JPH0571553B2 true JPH0571553B2 (enExample) | 1993-10-07 |
Family
ID=13966741
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8929788A Granted JPH01261292A (ja) | 1988-04-13 | 1988-04-13 | 半導体単結晶膜の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01261292A (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4430894C2 (de) * | 1994-08-31 | 2003-05-28 | Deutsch Zentr Luft & Raumfahrt | Verfahren und Vorrichtung zum Züchten von Kristallen |
| JP6124425B1 (ja) * | 2015-10-26 | 2017-05-10 | 株式会社日本製鋼所 | レーザ処理装置整流装置およびレーザ処理装置 |
-
1988
- 1988-04-13 JP JP8929788A patent/JPH01261292A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01261292A (ja) | 1989-10-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5105903B2 (ja) | レーザアニール装置及びアニール方法 | |
| KR100403792B1 (ko) | 레이저표면처리장치및방법 | |
| US5932003A (en) | Method of producing recrystallized-material-member, and apparatus and heating method therefor | |
| KR20060047591A (ko) | 레이저 결정화장치 및 레이저 결정화방법 | |
| JPH05183216A (ja) | レーザ光照射装置 | |
| JP2916452B1 (ja) | 結晶性半導体薄膜の評価方法およびレーザアニール装置 | |
| JPH01260812A (ja) | 半導体装置の製造方法および装置 | |
| JP2000150412A (ja) | 半導体処理方法及び半導体処理装置 | |
| JP2001308009A (ja) | 非単結晶膜、非単結晶膜付き基板、その製造方法及びその製造装置並びにその検査方法及びその検査装置並びにそれを用いた薄膜トランジスタ、薄膜トランジスタアレイ及び画像表示装置 | |
| JPH0571553B2 (enExample) | ||
| JP5177994B2 (ja) | 温度計測装置、及び温度算出方法 | |
| JPS5916691A (ja) | レ−ザ加工装置 | |
| US7001462B2 (en) | Method for making an oriented optical fluoride crystal blank | |
| JP2004233251A (ja) | レーザ検出方法、レーザ加工方法、及びレーザ加工装置 | |
| JPS5940526A (ja) | レ−ザ処理方法およびその装置 | |
| JPH0220137B2 (enExample) | ||
| JPH01115117A (ja) | ビーム均一化光学装置 | |
| JPS6247114A (ja) | 半導体単結晶膜の製造方法 | |
| JP2555650B2 (ja) | レーザアニール方法 | |
| Xu et al. | Transient heating and melting transformations in argon‐ion laser irradiation of polysilicon films | |
| JPS59190290A (ja) | 単結晶薄膜の形成方法 | |
| JPH0246721A (ja) | 固相エピタキシヤル成長方法 | |
| JPH0793261B2 (ja) | 単結晶薄膜形成装置 | |
| JPH03109719A (ja) | 半導体装置の製造方法 | |
| JPH0638066B2 (ja) | レ−ザ照射装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |