JPH01261292A - 半導体単結晶膜の製造方法 - Google Patents

半導体単結晶膜の製造方法

Info

Publication number
JPH01261292A
JPH01261292A JP8929788A JP8929788A JPH01261292A JP H01261292 A JPH01261292 A JP H01261292A JP 8929788 A JP8929788 A JP 8929788A JP 8929788 A JP8929788 A JP 8929788A JP H01261292 A JPH01261292 A JP H01261292A
Authority
JP
Japan
Prior art keywords
single crystal
intensity
semiconductor
laser beam
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8929788A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0571553B2 (enExample
Inventor
Kazuyuki Sugahara
和之 須賀原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP8929788A priority Critical patent/JPH01261292A/ja
Publication of JPH01261292A publication Critical patent/JPH01261292A/ja
Publication of JPH0571553B2 publication Critical patent/JPH0571553B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP8929788A 1988-04-13 1988-04-13 半導体単結晶膜の製造方法 Granted JPH01261292A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8929788A JPH01261292A (ja) 1988-04-13 1988-04-13 半導体単結晶膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8929788A JPH01261292A (ja) 1988-04-13 1988-04-13 半導体単結晶膜の製造方法

Publications (2)

Publication Number Publication Date
JPH01261292A true JPH01261292A (ja) 1989-10-18
JPH0571553B2 JPH0571553B2 (enExample) 1993-10-07

Family

ID=13966741

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8929788A Granted JPH01261292A (ja) 1988-04-13 1988-04-13 半導体単結晶膜の製造方法

Country Status (1)

Country Link
JP (1) JPH01261292A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5690735A (en) * 1994-08-31 1997-11-25 Deutsche Forschungsanstalt Fuer Luft- Und Raumfahrt E.V. Process for growing crystals
WO2017073561A1 (ja) * 2015-10-26 2017-05-04 株式会社日本製鋼所 レーザ処理装置整流装置およびレーザ処理装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5690735A (en) * 1994-08-31 1997-11-25 Deutsche Forschungsanstalt Fuer Luft- Und Raumfahrt E.V. Process for growing crystals
WO2017073561A1 (ja) * 2015-10-26 2017-05-04 株式会社日本製鋼所 レーザ処理装置整流装置およびレーザ処理装置
JP2017080754A (ja) * 2015-10-26 2017-05-18 株式会社日本製鋼所 レーザ処理装置整流装置およびレーザ処理装置
TWI695750B (zh) * 2015-10-26 2020-06-11 日商日本製鋼所股份有限公司 雷射處理裝置整流裝置以及雷射處理裝置
US11355364B2 (en) 2015-10-26 2022-06-07 Jsw Aktina System Co., Ltd. Laser treatment device rectifier device and laser treatment device

Also Published As

Publication number Publication date
JPH0571553B2 (enExample) 1993-10-07

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Legal Events

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