JPH02197562A - 薄膜製造装置 - Google Patents

薄膜製造装置

Info

Publication number
JPH02197562A
JPH02197562A JP1469389A JP1469389A JPH02197562A JP H02197562 A JPH02197562 A JP H02197562A JP 1469389 A JP1469389 A JP 1469389A JP 1469389 A JP1469389 A JP 1469389A JP H02197562 A JPH02197562 A JP H02197562A
Authority
JP
Japan
Prior art keywords
thin film
electron beam
intensity
sample
film formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1469389A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0575828B2 (enExample
Inventor
Hiromasa Maruno
浩昌 丸野
Makoto Shinohara
真 篠原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimadzu Corp
Original Assignee
Shimadzu Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corp filed Critical Shimadzu Corp
Priority to JP1469389A priority Critical patent/JPH02197562A/ja
Publication of JPH02197562A publication Critical patent/JPH02197562A/ja
Publication of JPH0575828B2 publication Critical patent/JPH0575828B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Physical Vapour Deposition (AREA)
JP1469389A 1989-01-24 1989-01-24 薄膜製造装置 Granted JPH02197562A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1469389A JPH02197562A (ja) 1989-01-24 1989-01-24 薄膜製造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1469389A JPH02197562A (ja) 1989-01-24 1989-01-24 薄膜製造装置

Publications (2)

Publication Number Publication Date
JPH02197562A true JPH02197562A (ja) 1990-08-06
JPH0575828B2 JPH0575828B2 (enExample) 1993-10-21

Family

ID=11868270

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1469389A Granted JPH02197562A (ja) 1989-01-24 1989-01-24 薄膜製造装置

Country Status (1)

Country Link
JP (1) JPH02197562A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101060210B1 (ko) 2003-02-10 2011-08-29 엔 트리그 리미티드. 디지타이저의 접촉 검출

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5984144A (ja) * 1982-11-08 1984-05-15 Ulvac Corp 不均質光学膜形成装置における膜特性監視装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5984144A (ja) * 1982-11-08 1984-05-15 Ulvac Corp 不均質光学膜形成装置における膜特性監視装置

Also Published As

Publication number Publication date
JPH0575828B2 (enExample) 1993-10-21

Similar Documents

Publication Publication Date Title
CN107655909B (zh) 可实现缺陷自动调控的电子衍射仪
WO2022128565A1 (en) Quantum computing device, use, and method
JP2022544980A (ja) 連続積分フィルタによる複数のコントローラビームの高速強度安定化
EP0459806B1 (en) Method of manufacturing thin film EL device and apparatus for manufacturing the same
JPH0594798A (ja) 焦点深度切り換え可能な電子顕微鏡等の電子光学観察装置
JPH02197562A (ja) 薄膜製造装置
JP3489989B2 (ja) パターン膜形成方法及びそれに用いる集束イオンビーム加工装置
CA2101286A1 (en) Oxide Superconducting Film Manufacturing Apparatus
JPH03208887A (ja) 分子線エピタキシャル成長方法
JP2625760B2 (ja) 真空蒸着装置
US10796881B2 (en) Method for processing an object
JPS6052822A (ja) レーザｃｖｄ装置
JP3371444B2 (ja) Ｘ線発生方法及びｘ線発生装置及びこれを有するｘ線露光装置
DE10353901A1 (de) Verfahren und Vorrichtung zur Bildung eines Substrats für Halbleiter oder dergleichen
CN107607564A (zh) 电子背散射衍射仪
JPH0350183A (ja) 結晶成長方法および結晶成長装置
JPS61186284A (ja) 分子線エピタキシ−装置
JPH11283548A (ja) 電子顕微鏡装置及びそれを用いた試料観察方法
JPH03142921A (ja) ３―５族化合物半導体薄膜製造装置
JPS6046367A (ja) 蒸着装置
JPH01243421A (ja) Ｘ線露光装置
JPH073632Y2 (ja) レーザｃｖｄ装置
KR20250044405A (ko) 표적 재료와의 상호 작용을 위한 펄스형 레이저 빔을 제공하기 위한 레이저 시스템 및 방법
JPH04194648A (ja) 粒子の密度と速度の測定方法及びその装置
JPS61278128A (ja) 分子線エピタキシヤル成長装置