JPH02197108A - 薄膜コンデンサおよびその製造方法 - Google Patents
薄膜コンデンサおよびその製造方法Info
- Publication number
- JPH02197108A JPH02197108A JP1072122A JP7212289A JPH02197108A JP H02197108 A JPH02197108 A JP H02197108A JP 1072122 A JP1072122 A JP 1072122A JP 7212289 A JP7212289 A JP 7212289A JP H02197108 A JPH02197108 A JP H02197108A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- mol
- leakage current
- dielectric
- added
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 44
- 239000003990 capacitor Substances 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000000203 mixture Substances 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims description 11
- 239000000843 powder Substances 0.000 claims description 7
- 238000004544 sputter deposition Methods 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 4
- 239000010408 film Substances 0.000 description 12
- 229910002113 barium titanate Inorganic materials 0.000 description 9
- 229910010252 TiO3 Inorganic materials 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910003781 PbTiO3 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Landscapes
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1072122A JPH02197108A (ja) | 1988-10-25 | 1989-03-23 | 薄膜コンデンサおよびその製造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26976188 | 1988-10-25 | ||
| JP63-269761 | 1988-10-25 | ||
| JP1072122A JPH02197108A (ja) | 1988-10-25 | 1989-03-23 | 薄膜コンデンサおよびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02197108A true JPH02197108A (ja) | 1990-08-03 |
| JPH0587166B2 JPH0587166B2 (enrdf_load_html_response) | 1993-12-15 |
Family
ID=17476783
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1072122A Granted JPH02197108A (ja) | 1988-10-25 | 1989-03-23 | 薄膜コンデンサおよびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02197108A (enrdf_load_html_response) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0717713A (ja) * | 1993-06-17 | 1995-01-20 | Nec Corp | 高誘電率薄膜 |
| EP2608219A1 (en) | 2011-12-20 | 2013-06-26 | Mitsubishi Materials Corporation | Dielectric thin film-forming composition, method of forming dielectric thin film and dielectric thin film formed by the method |
| US9595393B2 (en) | 2010-09-02 | 2017-03-14 | Mitsubishi Materials Corporation | Dielectric-thin-film forming composition, method of forming dielectric thin film, and dielectric thin film formed by the method |
-
1989
- 1989-03-23 JP JP1072122A patent/JPH02197108A/ja active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0717713A (ja) * | 1993-06-17 | 1995-01-20 | Nec Corp | 高誘電率薄膜 |
| US9595393B2 (en) | 2010-09-02 | 2017-03-14 | Mitsubishi Materials Corporation | Dielectric-thin-film forming composition, method of forming dielectric thin film, and dielectric thin film formed by the method |
| EP2608219A1 (en) | 2011-12-20 | 2013-06-26 | Mitsubishi Materials Corporation | Dielectric thin film-forming composition, method of forming dielectric thin film and dielectric thin film formed by the method |
| US9018118B2 (en) | 2011-12-20 | 2015-04-28 | Mitsubishi Materials Corporation | Dielectric thin film-forming composition, method of forming dielectric thin film and dielectric thin film formed by the method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0587166B2 (enrdf_load_html_response) | 1993-12-15 |
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Legal Events
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