JPH02196093A - 化合物半導体気相成長用反応器 - Google Patents
化合物半導体気相成長用反応器Info
- Publication number
- JPH02196093A JPH02196093A JP1546689A JP1546689A JPH02196093A JP H02196093 A JPH02196093 A JP H02196093A JP 1546689 A JP1546689 A JP 1546689A JP 1546689 A JP1546689 A JP 1546689A JP H02196093 A JPH02196093 A JP H02196093A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- gas passage
- reactor
- gas supply
- partition plates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000001875 compounds Chemical class 0.000 title claims abstract description 13
- 239000004065 semiconductor Substances 0.000 title claims abstract description 13
- 238000001947 vapour-phase growth Methods 0.000 title claims abstract description 11
- 238000005192 partition Methods 0.000 claims abstract description 66
- 239000007788 liquid Substances 0.000 claims abstract description 23
- 239000002994 raw material Substances 0.000 claims abstract description 21
- 230000002093 peripheral effect Effects 0.000 claims abstract description 10
- 239000000376 reactant Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims 1
- 239000007789 gas Substances 0.000 abstract description 149
- 239000012495 reaction gas Substances 0.000 abstract description 13
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 15
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 15
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 15
- 229910052733 gallium Inorganic materials 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 1
- 239000003984 copper intrauterine device Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1546689A JPH02196093A (ja) | 1989-01-24 | 1989-01-24 | 化合物半導体気相成長用反応器 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1546689A JPH02196093A (ja) | 1989-01-24 | 1989-01-24 | 化合物半導体気相成長用反応器 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02196093A true JPH02196093A (ja) | 1990-08-02 |
| JPH0579638B2 JPH0579638B2 (enExample) | 1993-11-04 |
Family
ID=11889580
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1546689A Granted JPH02196093A (ja) | 1989-01-24 | 1989-01-24 | 化合物半導体気相成長用反応器 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02196093A (enExample) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009537977A (ja) * | 2006-05-15 | 2009-10-29 | アイクストロン、アーゲー | Ｖｐｅ反応装置の線源 |
| JP2015173273A (ja) * | 2015-04-15 | 2015-10-01 | 株式会社サイオクス | 半導体ウエハの製造方法および半導体デバイスの製造方法 |
| JP2016044342A (ja) * | 2014-08-25 | 2016-04-04 | 住友化学株式会社 | 基板処理装置及び処理ガス生成器 |
| JP2016044341A (ja) * | 2014-08-25 | 2016-04-04 | 住友化学株式会社 | 基板処理装置及び処理ガス生成器 |
| CN110637104A (zh) * | 2017-05-18 | 2019-12-31 | 国立大学法人东京农工大学 | 气液反应装置、反应管及成膜装置 |
-
1989
- 1989-01-24 JP JP1546689A patent/JPH02196093A/ja active Granted
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009537977A (ja) * | 2006-05-15 | 2009-10-29 | アイクストロン、アーゲー | Ｖｐｅ反応装置の線源 |
| JP2016044342A (ja) * | 2014-08-25 | 2016-04-04 | 住友化学株式会社 | 基板処理装置及び処理ガス生成器 |
| JP2016044341A (ja) * | 2014-08-25 | 2016-04-04 | 住友化学株式会社 | 基板処理装置及び処理ガス生成器 |
| JP2015173273A (ja) * | 2015-04-15 | 2015-10-01 | 株式会社サイオクス | 半導体ウエハの製造方法および半導体デバイスの製造方法 |
| CN110637104A (zh) * | 2017-05-18 | 2019-12-31 | 国立大学法人东京农工大学 | 气液反应装置、反应管及成膜装置 |
| CN110637104B (zh) * | 2017-05-18 | 2022-03-25 | 国立大学法人东京农工大学 | 气液反应装置、反应管及成膜装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0579638B2 (enExample) | 1993-11-04 |
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