JPH02188967A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH02188967A
JPH02188967A JP776489A JP776489A JPH02188967A JP H02188967 A JPH02188967 A JP H02188967A JP 776489 A JP776489 A JP 776489A JP 776489 A JP776489 A JP 776489A JP H02188967 A JPH02188967 A JP H02188967A
Authority
JP
Japan
Prior art keywords
substrate
area
junction
schottky
formed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP776489A
Inventor
Tsutomu Matsushita
Teruyoshi Mihara
Yoshinori Murakami
Takeyuki Yao
Original Assignee
Nissan Motor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Motor Co Ltd filed Critical Nissan Motor Co Ltd
Priority to JP776489A priority Critical patent/JPH02188967A/en
Publication of JPH02188967A publication Critical patent/JPH02188967A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7839Field effect transistors with field effect produced by an insulated gate with Schottky drain or source contact
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/902FET with metal source region

Abstract

PURPOSE: To reduce the leak current of a semiconductor device so as to improve the resistance characteristics of the device by forming a shield layer having a conductivity type which is different from that of a semiconductor substrate at the boundary section between a Schottky metal area other than a Schottky junction forming area controlled by a gate electrode and the semiconductor substrate.
CONSTITUTION: This semiconductor device is provided with a semiconductor substrate 1 of the first conductivity type in which a drain area 2 is formed, Schottky metal area 3 formed in the main surface of the substrate 1 and forms a Schottky junction at part of the substrate 1 and, at the same time, functions as a source area, gate electrode 5 which is provided against the Schottky junction through an insulating film 4 and controls the tunnel current of the junction, and shield layer 6 of the second conductivity type formed at the boundary section between the Schottky metal area 3 other than the above-mentioned Schottky junction forming area controlled by the electrode 5 and the substrate 1. Therefore, the leak current at the shield section is remarkably reduced, since the leak current is produced at the p-n junction formed by the shield layer and substrate.
COPYRIGHT: (C)1990,JPO&Japio
JP776489A 1989-01-18 1989-01-18 Semiconductor device Pending JPH02188967A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP776489A JPH02188967A (en) 1989-01-18 1989-01-18 Semiconductor device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP776489A JPH02188967A (en) 1989-01-18 1989-01-18 Semiconductor device
DE19904001390 DE4001390C2 (en) 1989-01-18 1990-01-18 Semiconductor device
US07/465,750 US5049953A (en) 1989-01-18 1990-01-18 Schottky tunnel transistor device

Publications (1)

Publication Number Publication Date
JPH02188967A true JPH02188967A (en) 1990-07-25

Family

ID=11674756

Family Applications (1)

Application Number Title Priority Date Filing Date
JP776489A Pending JPH02188967A (en) 1989-01-18 1989-01-18 Semiconductor device

Country Status (3)

Country Link
US (1) US5049953A (en)
JP (1) JPH02188967A (en)
DE (1) DE4001390C2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008306058A (en) * 2007-06-08 2008-12-18 Sanken Electric Co Ltd Semiconductor device
JP2009517860A (en) * 2005-11-28 2009-04-30 エヌエックスピー ビー ヴィ Method for forming self-aligned Schottky junctions for semiconductor devices

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3039967B2 (en) * 1990-08-03 2000-05-08 株式会社日立製作所 Semiconductor device
JP2947654B2 (en) * 1990-10-31 1999-09-13 キヤノン株式会社 Mis type transistor
JP2657588B2 (en) * 1991-01-11 1997-09-24 株式会社半導体エネルギー研究所 Insulated gate semiconductor device and a manufacturing method thereof
US6624493B1 (en) 1994-05-31 2003-09-23 James D. Welch Biasing, operation and parasitic current limitation in single device equivalent to CMOS, and other semiconductor systems
US5760449A (en) * 1994-05-31 1998-06-02 Welch; James D. Regenerative switching CMOS system
US6268636B1 (en) 1994-05-31 2001-07-31 James D. Welch Operation and biasing for single device equivalent to CMOS
US6091128A (en) * 1994-05-31 2000-07-18 Welch; James D. Semiconductor systems utilizing materials that form rectifying junctions in both N and P-type doping regions, whether metallurgically or field induced, and methods of use
US20040004262A1 (en) * 1994-05-31 2004-01-08 Welch James D. Semiconductor devices in compensated semiconductor
US5663584A (en) * 1994-05-31 1997-09-02 Welch; James D. Schottky barrier MOSFET systems and fabrication thereof
US5962893A (en) * 1995-04-20 1999-10-05 Kabushiki Kaisha Toshiba Schottky tunneling device
KR100240629B1 (en) * 1997-08-30 2000-01-15 정선종 The charging effect nano transistor for tera bit memory devices and method of manufacturing the same
US6724039B1 (en) * 1998-08-31 2004-04-20 Stmicroelectronics, Inc. Semiconductor device having a Schottky diode
US6303479B1 (en) * 1999-12-16 2001-10-16 Spinnaker Semiconductor, Inc. Method of manufacturing a short-channel FET with Schottky-barrier source and drain contacts
RU2002115829A (en) * 2002-06-17 2004-03-10 Саито ТАКЕШИ (JP) Field-effect transistor
US6744112B2 (en) * 2002-10-01 2004-06-01 International Business Machines Corporation Multiple chip guard rings for integrated circuit and chip guard ring interconnect
US6963121B2 (en) * 2003-05-15 2005-11-08 Koucheng Wu Schottky-barrier tunneling transistor
JP4439358B2 (en) * 2003-09-05 2010-03-24 株式会社東芝 Field effect transistor and manufacturing method thereof
ITMI20070353A1 (en) * 2007-02-23 2008-08-24 Univ Padova Transistor field effect with the metal-semiconductor junction.
US8384122B1 (en) 2008-04-17 2013-02-26 The Regents Of The University Of California Tunneling transistor suitable for low voltage operation
US7936040B2 (en) * 2008-10-26 2011-05-03 Koucheng Wu Schottky barrier quantum well resonant tunneling transistor
US8878329B2 (en) 2010-09-17 2014-11-04 United Microelectronics Corp. High voltage device having Schottky diode
US8994078B2 (en) 2012-06-29 2015-03-31 Infineon Technologies Austria Ag Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61237470A (en) * 1985-04-15 1986-10-22 Hitachi Ltd Semiconductor device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5681972A (en) * 1979-12-07 1981-07-04 Toshiba Corp Mos type field effect transistor
GB2103419A (en) * 1981-08-04 1983-02-16 Siliconix Inc Field effect transistor with metal source
JPS62274775A (en) * 1986-05-23 1987-11-28 Hitachi Ltd Semiconductor device
JPH0693512B2 (en) * 1986-06-17 1994-11-16 日産自動車株式会社 Vertical mosfet
JPH0821678B2 (en) * 1987-05-29 1996-03-04 日産自動車株式会社 Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61237470A (en) * 1985-04-15 1986-10-22 Hitachi Ltd Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009517860A (en) * 2005-11-28 2009-04-30 エヌエックスピー ビー ヴィ Method for forming self-aligned Schottky junctions for semiconductor devices
JP2008306058A (en) * 2007-06-08 2008-12-18 Sanken Electric Co Ltd Semiconductor device

Also Published As

Publication number Publication date
US5049953A (en) 1991-09-17
DE4001390A1 (en) 1990-07-19
DE4001390C2 (en) 1994-02-10

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