RU2002115829A - Field-effect transistor - Google Patents

Field-effect transistor

Info

Publication number
RU2002115829A
RU2002115829A RU2002115829/28A RU2002115829A RU2002115829A RU 2002115829 A RU2002115829 A RU 2002115829A RU 2002115829/28 A RU2002115829/28 A RU 2002115829/28A RU 2002115829 A RU2002115829 A RU 2002115829A RU 2002115829 A RU2002115829 A RU 2002115829A
Authority
RU
Russia
Prior art keywords
semiconductor
resistance
resistance region
electrodes
region
Prior art date
Application number
RU2002115829/28A
Other languages
Russian (ru)
Inventor
Саито ТАКЕШИ (JP)
Саито Такеши
Виктор Николаевич Мурашев (RU)
Виктор Николаевич Мурашев
Виктор Наумович Мордкович (RU)
Виктор Наумович Мордкович
Евгений Сергеевич Горнев (RU)
Евгений Сергеевич Горнев
Original Assignee
Саито ТАКЕШИ (JP)
Саито Такеши
Виктор Николаевич Мурашев (RU)
Виктор Николаевич Мурашев
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Саито ТАКЕШИ (JP), Саито Такеши, Виктор Николаевич Мурашев (RU), Виктор Николаевич Мурашев filed Critical Саито ТАКЕШИ (JP)
Priority to RU2002115829/28A priority Critical patent/RU2002115829A/en
Priority to AU2003276565A priority patent/AU2003276565A1/en
Priority to PCT/RU2003/000260 priority patent/WO2003107433A1/en
Publication of RU2002115829A publication Critical patent/RU2002115829A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7839—Field effect transistors with field effect produced by an insulated gate with Schottky drain or source contact
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • H01L29/78624—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile the source and the drain regions being asymmetrical

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Claims (3)

1. Интегральный транзистор с полной диэлектрической изоляцией, имеющий первый электрод для подачи сигнала, управляющего током, протекающим между вторым и третьим электродом, и образующий структуру металл-окисел-полупроводник, средство, обеспечивающее протекание тока между вторым и третьим электродами, отличающийся тем, что средство, обеспечивающее протекание тока между вторым и третьим электродами включает электронно-дырочный переход, образованный полупроводниковой высокоомной и низкоомной областями и имеющий области пространственного заряда, примыкающие к его металлургической границе, а структура металл-окисел-полупроводник примыкает к полупроводниковой высокоомной части электронно-дырочного перехода для управления концентрацией основных носителей заряда в упомянутой высокоомной области.1. Integrated transistor with full dielectric insulation, having a first electrode for supplying a signal that controls the current flowing between the second and third electrodes, and forming a metal-oxide-semiconductor structure, means for providing a current flow between the second and third electrodes, characterized in that means for ensuring the flow of current between the second and third electrodes includes an electron-hole transition formed by a semiconductor high-resistance and low-resistance regions and having regions of spatial th charge adjacent to its metallurgical boundary, and the structure metal-oxide-semiconductor high-resistivity semiconductor adjacent to the portion of the pn junction to control the concentration of the majority charge carriers in said high resistance region. 2. Интегральный транзистор по п.1, отличающийся тем, что к упомянутой полупроводниковой высокоомной области примыкает дополнительная низкоомная полупроводниковая область того же типа проводимости.2. The integrated transistor according to claim 1, characterized in that an additional low-resistance semiconductor region of the same type of conductivity adjoins the said semiconductor high-resistance region. 3. Интегральный транзистор по пп.1 и 2, отличающийся тем, что упомянутая низкоомная область выполнена из силицида платины и образует диод Шотки с упомянутой высокоомной областью.3. The integrated transistor according to claims 1 and 2, characterized in that said low-resistance region is made of platinum silicide and forms a Schottky diode with said high-resistance region.
RU2002115829/28A 2002-06-17 2002-06-17 Field-effect transistor RU2002115829A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
RU2002115829/28A RU2002115829A (en) 2002-06-17 2002-06-17 Field-effect transistor
AU2003276565A AU2003276565A1 (en) 2002-06-17 2003-06-11 Field-effect transistor
PCT/RU2003/000260 WO2003107433A1 (en) 2002-06-17 2003-06-11 Field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RU2002115829/28A RU2002115829A (en) 2002-06-17 2002-06-17 Field-effect transistor

Publications (1)

Publication Number Publication Date
RU2002115829A true RU2002115829A (en) 2004-03-10

Family

ID=29729035

Family Applications (1)

Application Number Title Priority Date Filing Date
RU2002115829/28A RU2002115829A (en) 2002-06-17 2002-06-17 Field-effect transistor

Country Status (3)

Country Link
AU (1) AU2003276565A1 (en)
RU (1) RU2002115829A (en)
WO (1) WO2003107433A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2989220A1 (en) * 2012-04-06 2013-10-11 St Microelectronics Crolles 2 Integrated circuit, has source and/or drain regions separated from substrate region by another substrate region located under spacing region while latter substrate region has same conductivity type as that of former substrate region
CN105932049B (en) * 2016-05-23 2021-02-12 北京华碳元芯电子科技有限责任公司 Nanometer diode device and preparation method thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5153684A (en) * 1988-10-19 1992-10-06 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device with offset transistor
JPH02188967A (en) * 1989-01-18 1990-07-25 Nissan Motor Co Ltd Semiconductor device
JP3039967B2 (en) * 1990-08-03 2000-05-08 株式会社日立製作所 Semiconductor device
RU2130668C1 (en) * 1994-09-30 1999-05-20 Акционерное общество закрытого типа "VL" Field-effect metal-insulator-semiconductor transistor

Also Published As

Publication number Publication date
AU2003276565A1 (en) 2003-12-31
WO2003107433A1 (en) 2003-12-24

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Legal Events

Date Code Title Description
FA93 Acknowledgement of application withdrawn (no request for examination)

Effective date: 20050618