AU2003276565A1 - Field-effect transistor - Google Patents

Field-effect transistor

Info

Publication number
AU2003276565A1
AU2003276565A1 AU2003276565A AU2003276565A AU2003276565A1 AU 2003276565 A1 AU2003276565 A1 AU 2003276565A1 AU 2003276565 A AU2003276565 A AU 2003276565A AU 2003276565 A AU2003276565 A AU 2003276565A AU 2003276565 A1 AU2003276565 A1 AU 2003276565A1
Authority
AU
Australia
Prior art keywords
field
effect transistor
transistor
effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
AU2003276565A
Inventor
Evgeniy Sergeevich Gornev
Victor Naumovich Mordkovich
Victor Nikolaevich Mourachev
Saito Takeshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of AU2003276565A1 publication Critical patent/AU2003276565A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7839—Field effect transistors with field effect produced by an insulated gate with Schottky drain or source contact
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • H01L29/78624—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile the source and the drain regions being asymmetrical
AU2003276565A 2002-06-17 2003-06-11 Field-effect transistor Withdrawn AU2003276565A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
RU2002115829/28A RU2002115829A (en) 2002-06-17 2002-06-17 Field-effect transistor
RU2002115829 2002-06-17
PCT/RU2003/000260 WO2003107433A1 (en) 2002-06-17 2003-06-11 Field-effect transistor

Publications (1)

Publication Number Publication Date
AU2003276565A1 true AU2003276565A1 (en) 2003-12-31

Family

ID=29729035

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003276565A Withdrawn AU2003276565A1 (en) 2002-06-17 2003-06-11 Field-effect transistor

Country Status (3)

Country Link
AU (1) AU2003276565A1 (en)
RU (1) RU2002115829A (en)
WO (1) WO2003107433A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2989220A1 (en) * 2012-04-06 2013-10-11 St Microelectronics Crolles 2 Integrated circuit, has source and/or drain regions separated from substrate region by another substrate region located under spacing region while latter substrate region has same conductivity type as that of former substrate region
CN105932049B (en) * 2016-05-23 2021-02-12 北京华碳元芯电子科技有限责任公司 Nanometer diode device and preparation method thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5153684A (en) * 1988-10-19 1992-10-06 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device with offset transistor
JPH02188967A (en) * 1989-01-18 1990-07-25 Nissan Motor Co Ltd Semiconductor device
JP3039967B2 (en) * 1990-08-03 2000-05-08 株式会社日立製作所 Semiconductor device
RU2130668C1 (en) * 1994-09-30 1999-05-20 Акционерное общество закрытого типа "VL" Field-effect metal-insulator-semiconductor transistor

Also Published As

Publication number Publication date
RU2002115829A (en) 2004-03-10
WO2003107433A1 (en) 2003-12-24

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Legal Events

Date Code Title Description
MK13 Application withdrawn section 141(2)/reg 8.3(2) - pct appl. non-entering nat. phase, withdrawn by applicant