JPH02168515A - Superconducting thin film construction and manufacture thereof - Google Patents
Superconducting thin film construction and manufacture thereofInfo
- Publication number
- JPH02168515A JPH02168515A JP88323988A JP32398888A JPH02168515A JP H02168515 A JPH02168515 A JP H02168515A JP 88323988 A JP88323988 A JP 88323988A JP 32398888 A JP32398888 A JP 32398888A JP H02168515 A JPH02168515 A JP H02168515A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- substrate
- superconducting thin
- bismuth
- superconducting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 49
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 238000010276 construction Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 17
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims abstract description 9
- 238000000137 annealing Methods 0.000 claims description 13
- 150000002739 metals Chemical class 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 abstract description 7
- 238000004544 sputter deposition Methods 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 238000007740 vapor deposition Methods 0.000 abstract description 2
- 229910052727 yttrium Inorganic materials 0.000 abstract description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 2
- 229910052593 corundum Inorganic materials 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 2
- 229910015901 Bi-Sr-Ca-Cu-O Inorganic materials 0.000 abstract 1
- 229910002480 Cu-O Inorganic materials 0.000 abstract 1
- 229910000416 bismuth oxide Inorganic materials 0.000 abstract 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 6
- 230000001747 exhibiting effect Effects 0.000 description 3
- 229910014454 Ca-Cu Inorganic materials 0.000 description 2
- BYFGZMCJNACEKR-UHFFFAOYSA-N aluminium(i) oxide Chemical compound [Al]O[Al] BYFGZMCJNACEKR-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000002887 superconductor Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Other Surface Treatments For Metallic Materials (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明はＡＩＪ３基板上に緩衝薄膜層を介してＢ１５ｒ
−（：ａ−Ｃｕ−０又はＢ１−Ｐｂ−３ｒ−Ｃａ−Ｃｕ
−０であるビスマス系高温超伝導酸化物を形成してなる
超伝導薄膜構造及びその作製方法に関するものである。Detailed Description of the Invention <Industrial Application Field> The present invention provides B15r on an AIJ3 substrate via a buffer thin film layer.
-(:a-Cu-0 or B1-Pb-3r-Ca-Cu
The present invention relates to a superconducting thin film structure formed by forming a bismuth-based high temperature superconducting oxide having a temperature of -0 and a method for producing the same.
〈従来技術〉
１１ｉ−３ｒ−Ｃａ−Ｃｕ−０又はＢ１−Ｐｂ−３ｒ−
（：ａ−Ｃｕ−０からなるビスマス系超伝導薄膜は、約
８５Ｋ 、１２（ＩＫの２つの高い臨界温度を示し、か
かる超伝導体を薄膜化することによってデイバイス等エ
レクトロニクス分野への応用展開が期待されている。<Prior art> 11i-3r-Ca-Cu-0 or B1-Pb-3r-
A bismuth-based superconducting thin film consisting of a-Cu-0 exhibits two high critical temperatures of about 85 K and 12 (IK), and by making such a superconductor into a thin film, it can be applied to devices and other electronics fields. It is expected.
ところで、前記高温超伝導薄膜の形成は一般に単結晶Ｍ
ｇＯ基板又は単結晶５ｒＴｉＯａ基板上で行われている
。By the way, the formation of the high temperature superconducting thin film is generally carried out using single crystal M
It is performed on a gO substrate or a single crystal 5rTiOa substrate.
これは単結晶ＭｇＯ又は単結晶５ｒＴｉＯｓとビスマス
系酸化物がアニールの際に反応がほとんどなく。This is because there is almost no reaction between single-crystal MgO or single-crystal 5rTiOs and bismuth-based oxide during annealing.
配向性がよいためである。This is because it has good orientation.
しかし、かかる基板は極めて高価で実用面で問題があっ
た。一方、工業的に量産可能で安価なＡ１．口、を基板
に用いることが考えられるが、このものはビスマス系酸
化物とアニールの際に反応してビスマス系薄膜を形成す
る。そしてこの薄膜は、絶縁体もしくは高い臨界温度を
示さない超伝導体であった。However, such substrates are extremely expensive and have problems in practical use. On the other hand, A1. It is conceivable to use a bismuth-based oxide as a substrate, but this reacts with a bismuth-based oxide during annealing to form a bismuth-based thin film. This thin film was either an insulator or a superconductor that did not exhibit a high critical temperature.
このため、Ａ１．Ｏ，を基板としては用いることができ
ないとされていた。For this reason, A1. It was believed that O, could not be used as a substrate.
く本発明が解決しようとする問題点〉
本発明は、従来困難とされていた＾ｌ、０３基根上に高
い臨界温度を示すビスマス系酸化物１賎を形成すること
を可能とする手段を与λようとするものである。Problems to be Solved by the Present Invention> The present invention provides a means that makes it possible to form a layer of bismuth-based oxide exhibiting a high critical temperature on the ^l,03 radical, which has been considered difficult in the past. λ.
く問題点を解決するための手段〉
Ａ１．０ｍから選択された焼結体もしくは単結晶体を基
板に用い、その基板上にＹ系もしくはＬａ系酸化物又は
Ｙ系もしくはＬａ系金属から選択された少なくとも一種
の物質の緩衝薄膜を形成してアニルした後に、Ｄｉ−５
ｒ−Ｃａ−Ｃｕ−０又はＢ１−Ｐｂ−５ｒ−Ｃａ−Ｃｕ
−０の成膜組成であるビスマス系超伝導薄膜を形成し、
アニールすることにより高い臨界温度を示す酸化物超伝
導薄膜を得るようにしたものである。Means for Solving Problems〉 A sintered body or a single crystal body selected from A1.0m is used as a substrate, and a Y-based or La-based oxide or a Y-based or La-based metal selected from Y-based or La-based metals is deposited on the substrate. After forming a buffer thin film of at least one substance and annealing, Di-5
r-Ca-Cu-0 or B1-Pb-5r-Ca-Cu
Forming a bismuth-based superconducting thin film with a film formation composition of -0,
By annealing, an oxide superconducting thin film exhibiting a high critical temperature can be obtained.
上述の緩衝薄膜と超伝導薄膜の形成法としては、スパッ
タリング法、蒸着法等積々の方法を採用できる。As a method for forming the above-mentioned buffer thin film and superconducting thin film, various methods such as sputtering method and vapor deposition method can be adopted.
〈作用〉
酸化物焼結体基板又は単結晶基板とビスマス系超伝導薄
膜との間に、緩衝薄膜層を形成することにより、アニー
ル時の基板とビスマス系超伝導薄膜との間の反応をな（
シ、高い臨界温度を示す酸化物超伝導薄膜を得ることが
できる。<Function> By forming a buffer thin film layer between the oxide sintered substrate or single crystal substrate and the bismuth-based superconducting thin film, the reaction between the substrate and the bismuth-based superconducting thin film during annealing is prevented. (
Furthermore, an oxide superconducting thin film exhibiting a high critical temperature can be obtained.
〈実施例〉
［実施例−〕
９９．９％の高純度Ａ１．０．焼結体基板上にスパッタ
リング法により金属Ｙ（イツトリウム）の緩衝薄膜層０
．２μｍを形成し、大気中で１６５０℃でアニルした後
、さらにＢ１−３ｒ−Ｃａ−Ｃｕ−０薄膜０．１μｍを
形成し、 Ｎ、１０．混合雰囲気中８４４℃で５時間ア
ニールし、超伝導薄膜を得た。この超伝導薄膜について
四端子法にて抵抗温度特性を測定したところ９０にで抵
抗零となり超伝導状態を確認した。<Example> [Example-] 99.9% high purity A1.0. A buffer thin film layer of metal Y (yttrium) is deposited on the sintered substrate by sputtering.
．． After forming a 2 μm thick film and annealing at 1650° C. in the air, a 0.1 μm thick B1-3r-Ca-Cu-0 thin film was formed. Annealing was performed at 844° C. for 5 hours in a mixed atmosphere to obtain a superconducting thin film. When the resistance-temperature characteristics of this superconducting thin film were measured using a four-terminal method, the resistance became zero at 90°C, confirming a superconducting state.
［実施例二］
Ａｌａｓ、焼結体基板上にスパッタリング法によりＬａ
＊Ｏｓの緩衝薄膜層を形成し、大気中で１６００’Ｃで
アニールした後、さらにＢ１−３ｒ−Ｃａ−Ｃｕ−０薄
謹を形成しＮｔ／ ｏｔ混合雰囲気中８４０℃で３時間
アニールし、超伝導薄膜を得た。この超伝導薄膜につい
て四端子法にて抵抗温度特性を測定したところ添付図面
のように７９にで抵抗零となり超伝導状態を確認した。[Example 2] La was deposited on a sintered substrate by a sputtering method.
After forming a buffer thin film layer of *Os and annealing at 1600°C in the air, further forming a B1-3r-Ca-Cu-0 thin layer and annealing at 840°C for 3 hours in a Nt/ot mixed atmosphere. A superconducting thin film was obtained. When the resistance temperature characteristics of this superconducting thin film were measured using the four-terminal method, the resistance became zero at 79 as shown in the attached drawing, confirming the superconducting state.
〈効果〉 本発明は上述の実施例で明らかにしたように。<effect> The invention has been demonstrated in the above embodiments.
工業的に量産可能で安価なＡｌ２Ｏ，を基板に用いて、
高い臨界温度を示すビスマス系超伝導薄膜構造を形成す
ることができる優れた効果がある。Using Al2O, which is industrially mass-producable and inexpensive, for the substrate,
This has the excellent effect of forming a bismuth-based superconducting thin film structure that exhibits a high critical temperature.
添付図面は、実施例二の方法で作成された超伝導薄膜構
造の抵抗−温度特性を示すグラフである。The attached drawing is a graph showing the resistance-temperature characteristics of the superconducting thin film structure produced by the method of Example 2.
Claims (1)
ら選択された少なくとも一種の物質を有してなる緩衝薄
膜層を介してビスマス系超伝導薄膜を形成したことを特
徴とする超伝導薄膜構造。 ２）Ａｌ＿２Ｏ＿３基板上にＹ系酸化物又はＹ系金属か
ら選択された少なくとも一種の物質を有してなる緩衝薄
膜層を形成し、アニールする工程と、該緩衝薄膜層を形
成した基板上にビスマス系超伝導薄膜を形成し、アニー
ルする工程とを有することを特徴とする超伝導薄膜の作
製方法。 ３）Ａｌ＿２Ｏ＿３基板上にＬａ系酸化物又はＬａ系金
属から選択された少なくとも一種の物質を有してなる緩
衝薄膜層を介してビスマス系超伝導薄膜を形成したこと
を特徴とする超伝導薄膜構造。 ４）Ａｌ＿２Ｏ＿３基板上にＬａ系酸化物又はＬａ系金
属から選択された少なくとも一種の物質を有してなる緩
衝薄膜層を形成し、アニールする工程と、該緩衝薄膜層
を形成した基板上にビスマス系超伝導薄膜を形成し、ア
ニールする工程とを有することを特徴とする超伝導薄膜
の作製方法。[Claims] 1) A bismuth-based superconducting thin film is formed on an Al_2O_3 substrate via a buffer thin film layer comprising at least one substance selected from Y-based oxides or Y-based metals. Superconducting thin film structure. 2) A step of forming a buffer thin film layer containing at least one substance selected from Y-based oxides or Y-based metals on the Al_2O_3 substrate and annealing it, and adding bismuth onto the substrate on which the buffer thin film layer is formed. 1. A method for producing a superconducting thin film, comprising the steps of forming a superconducting thin film and annealing it. 3) A superconducting thin film structure characterized in that a bismuth-based superconducting thin film is formed on an Al_2O_3 substrate via a buffer thin film layer comprising at least one substance selected from La-based oxides or La-based metals. . 4) A step of forming a buffer thin film layer containing at least one substance selected from La-based oxides or La-based metals on the Al_2O_3 substrate and annealing it, and applying bismuth on the substrate on which the buffer thin film layer is formed. 1. A method for producing a superconducting thin film, comprising the steps of forming a superconducting thin film and annealing it.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63323988A JP2759469B2 (en) | 1988-12-21 | 1988-12-21 | Superconducting thin film fabrication method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63323988A JP2759469B2 (en) | 1988-12-21 | 1988-12-21 | Superconducting thin film fabrication method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02168515A true JPH02168515A (en) | 1990-06-28 |
| JP2759469B2 JP2759469B2 (en) | 1998-05-28 |
Family
ID=18160868
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63323988A Expired - Fee Related JP2759469B2 (en) | 1988-12-21 | 1988-12-21 | Superconducting thin film fabrication method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2759469B2 (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63239738A (en) * | 1987-03-27 | 1988-10-05 | Matsushita Electric Ind Co Ltd | Superconductor wire and manufacture thereof |
| JPS63248019A (en) * | 1987-04-03 | 1988-10-14 | Hitachi Ltd | Manufacture of oxide superconductive thin film |
| JPS63257127A (en) * | 1987-04-13 | 1988-10-25 | Matsushita Electric Ind Co Ltd | Manufacture of thin film superconductor |
| JPS63283086A (en) * | 1987-05-14 | 1988-11-18 | Furukawa Electric Co Ltd:The | Manufacture of superconducting thin film |
| JPH0251806A (en) * | 1988-08-12 | 1990-02-21 | Mitsui Mining & Smelting Co Ltd | Superconducting ceramic laminated body and manufacture thereof |
| JPH02112109A (en) * | 1988-03-25 | 1990-04-24 | Fujitsu Ltd | Superconductor film and manufacture thereof |
-
1988
- 1988-12-21 JP JP63323988A patent/JP2759469B2/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63239738A (en) * | 1987-03-27 | 1988-10-05 | Matsushita Electric Ind Co Ltd | Superconductor wire and manufacture thereof |
| JPS63248019A (en) * | 1987-04-03 | 1988-10-14 | Hitachi Ltd | Manufacture of oxide superconductive thin film |
| JPS63257127A (en) * | 1987-04-13 | 1988-10-25 | Matsushita Electric Ind Co Ltd | Manufacture of thin film superconductor |
| JPS63283086A (en) * | 1987-05-14 | 1988-11-18 | Furukawa Electric Co Ltd:The | Manufacture of superconducting thin film |
| JPH02112109A (en) * | 1988-03-25 | 1990-04-24 | Fujitsu Ltd | Superconductor film and manufacture thereof |
| JPH0251806A (en) * | 1988-08-12 | 1990-02-21 | Mitsui Mining & Smelting Co Ltd | Superconducting ceramic laminated body and manufacture thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2759469B2 (en) | 1998-05-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |