JPH01111718A - Process for forming superconductive thin film - Google Patents
Process for forming superconductive thin filmInfo
- Publication number
- JPH01111718A JPH01111718A JP62268601A JP26860187A JPH01111718A JP H01111718 A JPH01111718 A JP H01111718A JP 62268601 A JP62268601 A JP 62268601A JP 26860187 A JP26860187 A JP 26860187A JP H01111718 A JPH01111718 A JP H01111718A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- forming
- film
- rare earth
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 49
- 238000000034 method Methods 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 239000010408 film Substances 0.000 claims abstract description 39
- 239000004065 semiconductor Substances 0.000 claims abstract description 32
- 238000004544 sputter deposition Methods 0.000 claims abstract description 6
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 5
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 29
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 29
- 238000010438 heat treatment Methods 0.000 claims description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 13
- 239000001301 oxygen Substances 0.000 claims description 13
- 229910052760 oxygen Inorganic materials 0.000 claims description 13
- 229910052788 barium Inorganic materials 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- 229910052693 Europium Inorganic materials 0.000 claims description 2
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 2
- 229910052779 Neodymium Inorganic materials 0.000 claims description 2
- 229910052772 Samarium Inorganic materials 0.000 claims description 2
- 229910052771 Terbium Inorganic materials 0.000 claims description 2
- 229910052775 Thulium Inorganic materials 0.000 claims description 2
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 2
- 229910052746 lanthanum Inorganic materials 0.000 claims description 2
- 229910052692 Dysprosium Inorganic materials 0.000 claims 1
- 229910052691 Erbium Inorganic materials 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- 229910052689 Holmium Inorganic materials 0.000 claims 1
- 229910052765 Lutetium Inorganic materials 0.000 claims 1
- 238000001771 vacuum deposition Methods 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 10
- 238000001755 magnetron sputter deposition Methods 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 4
- 229910052786 argon Inorganic materials 0.000 abstract description 3
- 239000000843 powder Substances 0.000 abstract description 2
- 150000002910 rare earth metals Chemical class 0.000 abstract description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 abstract 6
- 239000003513 alkali Substances 0.000 abstract 1
- 239000002887 superconductor Substances 0.000 description 32
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 31
- 239000007788 liquid Substances 0.000 description 13
- 239000001307 helium Substances 0.000 description 9
- 229910052734 helium Inorganic materials 0.000 description 9
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000000203 mixture Substances 0.000 description 7
- 238000001228 spectrum Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000001747 exhibiting effect Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は集積回路等の配線に用いる超電導薄膜の形成方
法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for forming a superconducting thin film used for wiring of integrated circuits and the like.
従来の技術
従来集積回路等の配線にはＡｕ、Ａｌ、Ｃｕ等がもちい
られ、超電導薄膜は殆ど用いられることはなかった。こ
れは従来の超電導薄膜（例えばＮｂ、Ｎｂ、Ｇｅ等）が
液体ヘリウムで冷却しなければ超電導状態とならず冷却
コストが非常に高かったためである。ところが液体窒素
温度で超電導状態となる希土類酸化物超電導体の発見に
より配線材料として超電導薄膜を利用できるようになっ
た。2. Description of the Related Art Conventionally, materials such as Au, Al, and Cu have been used for wiring in integrated circuits, and superconducting thin films have rarely been used. This is because conventional superconducting thin films (for example, Nb, Nb, Ge, etc.) cannot become superconducting unless cooled with liquid helium, and the cooling cost is extremely high. However, the discovery of rare earth oxide superconductors that become superconducting at liquid nitrogen temperatures has made it possible to use superconducting thin films as wiring materials.
発明が解決しようとする問題点
しかしながらこの希土類酸化物超電導体は薄膜形成時も
しくは薄膜形成後に酸素を有する雰囲気中にて６００〜
９５０℃で熱処理しなければ超電ｍＴＲ膜とはならずこ
のような高温にすることは超電導薄膜と基板とが反応し
良好な超電導薄膜が形成できない。また半導体基板表面
が酸化し半導体基板表面上の能動素子が損傷を受けるな
どの問題があった。このことがとくに集積回路の配線に
この希土類酸化物超電導体を用いることができない大き
な理由となっていた。Problems to be Solved by the Invention However, this rare earth oxide superconductor can be used in an atmosphere containing oxygen during or after the formation of a thin film.
A superconducting mTR film cannot be obtained unless it is heat-treated at 950° C. At such a high temperature, the superconducting thin film and the substrate react, and a good superconducting thin film cannot be formed. Further, there is a problem that the surface of the semiconductor substrate is oxidized and active elements on the surface of the semiconductor substrate are damaged. This has been a major reason why this rare earth oxide superconductor cannot be used particularly for wiring in integrated circuits.
本発明はこのような欠点を解消するためのもので希土類
酸化物超電導体と酸素を有する雰囲気中での熱処理によ
り反応する半導体基板上に希土類酸化物超電導体を形成
することを目的とする。The present invention is intended to eliminate such drawbacks, and aims to form a rare earth oxide superconductor on a semiconductor substrate that reacts with the rare earth oxide superconductor by heat treatment in an atmosphere containing oxygen.
問題点を解決するための手段
上記問題点を解決するために本発明の希土類酸化物超電
導体形成方法は半導体基板上に酸化ジルコニウム膜をス
パッタリング法で形成しそののちに希土類酸化物超電導
体を形成するものである。Means for Solving the Problems In order to solve the above problems, the method for forming a rare earth oxide superconductor of the present invention involves forming a zirconium oxide film on a semiconductor substrate by a sputtering method, and then forming a rare earth oxide superconductor. It is something to do.
この緩衝膜である酸化ジルコニウム膜が基板と希土類酸
化物超電導体が酸素を有する雰囲気中での熱処理による
反応、及び半導体基板表面の酸化を阻止する。This zirconium oxide film, which is a buffer film, prevents the reaction between the substrate and the rare earth oxide superconductor due to heat treatment in an oxygen-containing atmosphere, and prevents oxidation of the surface of the semiconductor substrate.
作用
本発明は上記した構成により希土類酸化物超電４体薄膜
に６００℃〜９５０℃の長時間の酸素を有する雰囲気中
での熱処理を施しても希土類酸化物超電導体薄膜と半導
体基板とが反応し希土類酸化物超電導体薄膜の組成が変
化し超電導性を示さなくなることや半導体基板表面が酸
化し半導体基板表面の能動素子が損傷を受けるようなこ
とがなくなる。Effect The present invention has the above-described structure, so that even if the rare earth oxide superconductor thin film is subjected to heat treatment in an oxygen-containing atmosphere at 600°C to 950°C for a long time, the rare earth oxide superconductor thin film and the semiconductor substrate react. This prevents the rare earth oxide superconductor thin film from changing its composition and no longer exhibiting superconductivity, and from oxidizing the surface of the semiconductor substrate and damaging active elements on the surface of the semiconductor substrate.
実施例 以下本発明の一実施例について説明する。Example An embodiment of the present invention will be described below.
実施例１
基板としてＩＶ族半導体基板であるＳｉ基板を用い、緩
衝膜として酸化ジルコニウムを高周波マグネトロンスパ
ッタリングにより形成した。雰囲気ガスはアルゴン＋酸
素（１０％）として反応性の雰囲気でおこなった。膜厚
は約３０００人である。その後、ＬｎとしてＹを、Ａｅ
としてＢａを用いてＹ−Ｂａ−Ｃｕ酸化物の粉体をター
ゲットとして酸化ジルコニウムのときと同様に高周波マ
グネトロンスパッタリングにより形成した。雰囲気ガス
も同様にアルゴン＋酸素（１０％）として反応性雰囲気
でおこなった。製膜後の組成は（Ｙ：Ｂａ：Ｃｕ）＝（
１：２：３）となっていた。比較のために酸化ジルコニ
ウムを形成していないＳｉ基板上にもこの希土類酸化物
超電導体薄膜を形成した。Example 1 A Si substrate, which is a group IV semiconductor substrate, was used as a substrate, and zirconium oxide was formed as a buffer film by high-frequency magnetron sputtering. The atmosphere gas was argon + oxygen (10%) and a reactive atmosphere was used. The film thickness is approximately 3,000 people. After that, Y as Ln, Ae
It was formed by high frequency magnetron sputtering using Ba as a target and Y--Ba--Cu oxide powder as in the case of zirconium oxide. Similarly, the atmosphere gas was argon + oxygen (10%) and a reactive atmosphere was used. The composition after film formation is (Y:Ba:Cu)=(
1:2:3). For comparison, this rare earth oxide superconductor thin film was also formed on a Si substrate on which zirconium oxide was not formed.
酸化ジルコニウムを形成していないものの形成直後の各
元素の深さ方向のオージェ電子分光スペクトルの相対強
度を第１図に、及び酸化ジルコニウムを形成したものの
各元素の深さ方向のオージェ電子分光スペクトルを第２
図に示す。これらの試料を超電導薄膜とするために酸素
雰囲気中で９２０℃で１時間熱処理を行いその後炉内で
１００℃／ｈｒの冷却速度で酸素雰囲気のまま冷却した
。この薄膜の電気特性を測定したところ、酸化ジルコニ
ウム膜を緩衝膜として形成した希土類酸化物超電導体薄
膜は液体ヘリウム中（４，２Ｋ）ではもちろん、液体窒
素中（７７Ｋ ）でも電気抵抗が０Ωとなり超電導性膜
となった。しかし酸化ジルコニウム膜を形成しなかった
ほうの希土類酸化物超電導体薄膜は温度を液体ヘリウム
温度まで下げても電気抵抗は０Ωとならず超電導体膜と
はならなかった。この２種類の希土類酸化物超電導体薄
膜の各元素の深さ方向のオージェ電子分光スペクトルの
相対強度を第３図、第４図に示す。第３図が酸化ジルコ
ニウム膜を緩衝膜として形成していない希土類酸化物超
電導体薄膜であり、第４図が酸化ジルコニラム膜を緩衝
膜として形成した希土類酸化物超電導体薄膜である。比
較してみるとわかるように酸化ジルコニウム膜が希土類
酸化物超電導体薄膜と半導体基板との反応をおさえ超電
導性を示さなくなることや、また半導体基板表面が熱処
理により酸化されることを防止している様子がはっきり
とわかる。Figure 1 shows the relative intensities of the Auger electron spectroscopy spectra in the depth direction of each element immediately after formation, even though zirconium oxide has not been formed, and the Auger electron spectroscopy spectra in the depth direction of each element, which has formed zirconium oxide. Second
As shown in the figure. In order to make these samples into superconducting thin films, they were heat-treated at 920° C. for 1 hour in an oxygen atmosphere, and then cooled in a furnace at a cooling rate of 100° C./hr in the oxygen atmosphere. When we measured the electrical properties of this thin film, we found that the rare earth oxide superconductor thin film formed with a zirconium oxide film as a buffer film had an electrical resistance of 0Ω not only in liquid helium (4.2K) but also in liquid nitrogen (77K), making it superconducting. It became a sexual membrane. However, the rare earth oxide superconductor thin film on which the zirconium oxide film was not formed had an electrical resistance of 0Ω and did not become a superconductor film even when the temperature was lowered to the liquid helium temperature. The relative intensities of the Auger electron spectra in the depth direction of each element in these two types of rare earth oxide superconductor thin films are shown in FIGS. 3 and 4. FIG. 3 shows a rare earth oxide superconductor thin film in which a zirconium oxide film is not formed as a buffer film, and FIG. 4 shows a rare earth oxide superconductor thin film in which a zirconium oxide film is formed as a buffer film. As you can see from the comparison, the zirconium oxide film suppresses the reaction between the rare earth oxide superconductor thin film and the semiconductor substrate, preventing it from exhibiting superconductivity and preventing the semiconductor substrate surface from being oxidized by heat treatment. I can see the situation clearly.
実施例２
つぎに同様の条件でＹを特許請求範囲第（２）項記載の
希土類に変更した。ｌ、ａ、Ｎｄ、Ｓｍ、Ｅｕ。Example 2 Next, under the same conditions, Y was changed to the rare earth metal described in claim (2). l, a, Nd, Sm, Eu.
Ｇｄ、Ｔｂ、Ｄ”Ｊ、Ｈｏ、Ｂｒ、Ｔｍ、Ｙｂ、ＬＵの
いずれも少なくとも液体ヘリウム中で超電導性を示した
。組成はいずれも（Ｌｎ ： Ｂａ ： Ｃｕ）＝（１
：２：３）であった。Ｙを他の特許請求範囲第（２）項
記載の希土類に変更しても酸化ジルコニウム膜が希土類
酸化物超電導体薄膜と半導体基板との反応をおさえ超電
導性を示さなくなることや、また半導体基板表面が熱処
理により酸化されることを防止していた。Gd, Tb, D''J, Ho, Br, Tm, Yb, and LU all showed superconductivity at least in liquid helium.The composition of all of them was (Ln:Ba:Cu)=(1
:2:3). Even if Y is changed to a rare earth element described in claim 2, the zirconium oxide film suppresses the reaction between the rare earth oxide superconductor thin film and the semiconductor substrate, and does not exhibit superconductivity. was prevented from being oxidized by heat treatment.
実施例３
次に実施例１のＹをＬａに、ＢａをＳｒ及びＣａに変え
た。基板は実施例１と同様にＳｉ基板を用い、其の他の
条件も実施例１と同様にしておこなった。ＢａをＢｒ、
Ｃａにかえた場合でも実施例１と同様に少なくとも液体
ヘリウム温度で超電導性をしめした。組成は（Ｌａｔ、
ｓ ｓｒＯ，！ ） ＣＵ及び（Ｌａｔ、ｓ Ｃａｏ、
ｚ ）Ｃｕであった。上記のようにＬｎ、Ａｅを変更し
ても酸化ジルコニウム膜が希土類酸化物超電導体薄膜と
半導体基板との反応をおさえ超電導性を示さなくなるこ
とや、また半導体基板表面が熱処理により酸化されるこ
とを防止していた。Example 3 Next, Y in Example 1 was changed to La, and Ba was changed to Sr and Ca. As in Example 1, a Si substrate was used as the substrate, and the other conditions were the same as in Example 1. Ba to Br,
Even when Ca was used instead, superconductivity was exhibited at least at the liquid helium temperature as in Example 1. The composition is (Lat,
s srO,! ) CU and (Lat, s Cao,
z) It was Cu. As mentioned above, even if Ln and Ae are changed, the zirconium oxide film suppresses the reaction between the rare earth oxide superconductor thin film and the semiconductor substrate, and superconductivity is no longer exhibited.Also, the surface of the semiconductor substrate may be oxidized by heat treatment. It was being prevented.
実施例４
つぎに希土類としてＹを用い、基板に特許請求範囲第（
４）項記載の半導体基板を使用した。其の他の条件は実
施例１と同じである。酸化ジルコニウム薄膜が緩衝膜と
して存在するためにＳｉ、Ｇｅ。Example 4 Next, Y was used as the rare earth element, and the substrate contained in the claims No.
The semiconductor substrate described in section 4) was used. The other conditions are the same as in Example 1. Si, Ge because the zirconium oxide thin film exists as a buffer film.
（：、ａＡｓ、ＩｎＰのいずれの半導体基板においても
希土類酸化物超電導体薄膜が少なくとも液体ヘリウム温
度で超電導性を示した。またオージェ電子分光スペクト
ルを調べた結果、半導体基板表面はいずれも酸化されて
いなかった。(:, Rare earth oxide superconductor thin films on both aAs and InP semiconductor substrates exhibited superconductivity at least at liquid helium temperatures. Furthermore, as a result of examining Auger electron spectroscopy spectra, the surfaces of the semiconductor substrates were not oxidized. There wasn't.
実施例５
実施例１の条件において熱処理温度を６００℃〜９５０
°Ｃの範囲に変更してみた。その結果、いずれの温度に
おいても少なくとも液体ヘリウム温度で超電導性を示し
た。いずれの温度においても酸化ジルコニウム膜が希土
類酸化物超電導体薄膜と半導体基板との反応をおさえ超
電導性を示さなくなることや、また半導体基板表面が熱
処理により酸化されることを防止していた。Example 5 Heat treatment temperature was changed from 600°C to 950°C under the conditions of Example 1.
I tried changing the range to °C. As a result, it showed superconductivity at least at liquid helium temperatures at all temperatures. At all temperatures, the zirconium oxide film suppressed the reaction between the rare earth oxide superconductor thin film and the semiconductor substrate, preventing superconductivity from being exhibited and preventing the semiconductor substrate surface from being oxidized by heat treatment.
実施例６
実施例１の条件においてＹ、Ｂａ、Ｃｕの組成比を変更
してみた。その結果、（Ｙｌ−ｘＢａＸ）ＣｕでＸが０
．４〜０．８の範囲でこれらの膜は少なくとも液体ヘリ
ウム温度で超電導性を示した。上記のように組成を変更
しても酸化ジルコニウム膜が希土類酸化物超電導体薄膜
と半導体基板との反応をおさえ超電導性を示さなくなる
ことや、また半導体基板表面が熱処理により酸化される
ことを防止していた。Example 6 The composition ratios of Y, Ba, and Cu were changed under the conditions of Example 1. As a result, in (Yl-xBaX)Cu, X is 0
．． 4 to 0.8, these films exhibited superconductivity at least at liquid helium temperatures. Even if the composition is changed as described above, the zirconium oxide film suppresses the reaction between the rare earth oxide superconductor thin film and the semiconductor substrate, preventing it from exhibiting superconductivity and preventing the semiconductor substrate surface from being oxidized by heat treatment. was.
実施例７
実施例Ｉの条件において酸化ジルコニウム膜の膜厚を１
０００Å〜５μｍに変えてみた。酸化ジルコニウム膜の
膜厚が１０００人より薄いと緩衝膜としての役割をなさ
ず、５μｍより厚いと酸化ジルコニウム膜にクラックが
はいり好ましくない状態であった。酸化ジルコニウム薄
膜の膜厚が１０００Å〜５μｍでは実施例１と同じよう
に酸化ジルコニウム膜が希土類酸化物超電導体薄膜と半
導体基板との反応をおさえ超電導性を示さなくなること
や、また半導体基板表面が熱処理により酸化されること
を防止していた。Example 7 Under the conditions of Example I, the thickness of the zirconium oxide film was 1
I tried changing the thickness from 000 Å to 5 μm. When the thickness of the zirconium oxide film was less than 1,000 μm, it did not function as a buffer film, and when it was thicker than 5 μm, cracks appeared in the zirconium oxide film, which was an undesirable condition. When the thickness of the zirconium oxide thin film is 1000 Å to 5 μm, as in Example 1, the zirconium oxide film suppresses the reaction between the rare earth oxide superconductor thin film and the semiconductor substrate, and superconductivity is no longer exhibited, and the semiconductor substrate surface is heat-treated. was prevented from being oxidized.
実施例８
実施例１の条件においてＬｎ−Ａｅ−Ｃｕ酸化物を真空
蒸着法により形成した。組成は同じく（Ｙ：Ｂａ ：Ｃ
ｕ）＝ （１： ２ ： ３）となるようにした。その
結果、実施例１と同じように液体ヘリウム温度（４，２
Ｋ）ではもちろん、液体窒素温度（７７Ｋ ”）でも超
電導性を示した。Ｌｎ−Ａｅ−Ｃｕ酸化物を真空蒸着法
により形成しても酸化ジルコニウム膜が希土類酸化物超
電導体薄膜と半導体基板との反応をおさえ超電導性を示
さなくなることや、また半導体基板表面が熱処理により
酸化されることを防止していた。Example 8 Ln-Ae-Cu oxide was formed under the conditions of Example 1 by vacuum evaporation. The composition is the same (Y:Ba:C
u) = (1: 2: 3). As a result, the liquid helium temperature (4, 2
It showed superconductivity not only at liquid nitrogen temperature (77 K'') but also at liquid nitrogen temperature (77 K''). Even when Ln-Ae-Cu oxide is formed by vacuum evaporation, the zirconium oxide film does not bond between the rare earth oxide superconductor thin film and the semiconductor substrate. The reaction was suppressed to prevent superconductivity from being exhibited and to prevent the surface of the semiconductor substrate from being oxidized by heat treatment.
発明の効果
以上のように本発明は希土類酸化物超電導体薄膜を形成
する前に緩衝膜として酸化ジルコニウム膜を設けること
により長時間の酸素を有する雰囲気中で熱処理を施して
も基板材料と希土類酸化物超電４体薄膜が反応をおこす
ことなく超電導性を失うことがないようにすることがで
きる。また酸素を有する雰囲気中で熱処理を施しても半
導体基板表面が酸化され半導体基板表面の能動素子が損
傷を受けないようにすることができる。Effects of the Invention As described above, the present invention provides a zirconium oxide film as a buffer film before forming a rare earth oxide superconductor thin film, so that even if heat treatment is performed in an atmosphere containing oxygen for a long time, the substrate material and rare earth oxide It is possible to prevent the superconductor 4-body thin film from losing its superconductivity without causing a reaction. Furthermore, even if heat treatment is performed in an atmosphere containing oxygen, the surface of the semiconductor substrate will not be oxidized and active elements on the surface of the semiconductor substrate will not be damaged.
第１図は本発明と比較するためＳｉ基板上に酸化ジルコ
ニウム膜を形成せず希土類酸化物超電導体であるＹ−Ｂ
ａ−Ｃｕ酸化物を高周波マグネトロンスパッタリングに
より形成した直後の各元素のオージェ電子分光スペクト
ルの相対強度の深さ方向のグラフ、第２図は本発明によ
りＳｉ基板上に酸化ジルコニウム膜を緩衝膜として形成
しその後同様に高周波マグネトロンスパッタリングによ
り希土類酸化物超電導体であるＹ−Ｂａ−Ｃｕ酸化物を
形成した直後の各元素のオージェ電子分光スペクトルの
相対強度の深さ方向のグラフ、第３図は本発明と比較の
ためＳｉ基板上に酸化ジルコニウム膜を形成せず希土類
酸化物超電導体であるＹ−Ｂａ−Ｃｕ酸化物を高周波マ
グネトロンスパッタリングにより形成し酸素雰囲気中で
９２０℃、１時間の熱処理を施した後の各元素のオージ
ェ電子分光スペクトルの相対強度の深さ方向のグラフ、
第４図は本発明によりＳｉ基板上に酸化ジルコニウム膜
を緩衝膜として形成しその後同様に高周波マグネトロン
スパッタリングにより希土類酸化物超電導体であるＹ−
Ｂａ−Ｃｕ酸化物を形成し酸素雰囲気中で９２０℃、１
時間の熱処理を施した後の各元素のオージェ電子分光ス
ペクトルの相対強度の深さ方向のグラフである。
１・・・・・・０．２・・・・・・Ｂａ、 ３・・・
・・・Ｙ、４・・・・・・Ｃｕ ％５・・・・・・Ｓｉ
、６・・・・・・Ｚｒ０代理人の氏名 弁理士 中尾敏
男 はか１名才−ンエ電芒スペグトルオ目文オ光し艷
図＄
（／Ｉ へ ω Ｎ −５、
（／ｌ（”） べ ） ）
ト、Ｆ： む
Ｃ＞ θ も Ｃｕ Ｎ−。
四 ３ Ω べ一 も
く ←・ ト ８
己
ｃ／、へ ω 〜 −
だＰペタ８Figure 1 shows Y-B which is a rare earth oxide superconductor without forming a zirconium oxide film on a Si substrate for comparison with the present invention.
Figure 2 is a graph of the relative intensity in the depth direction of the Auger electron spectra of each element immediately after a-Cu oxide is formed by high-frequency magnetron sputtering. 3 is a graph of the relative intensity in the depth direction of the Auger electron spectra of each element immediately after forming Y-Ba-Cu oxide, which is a rare earth oxide superconductor, by high-frequency magnetron sputtering. For comparison, Y-Ba-Cu oxide, which is a rare earth oxide superconductor, was formed on a Si substrate by high-frequency magnetron sputtering without forming a zirconium oxide film, and heat treated at 920°C for 1 hour in an oxygen atmosphere. Graph of relative intensity of Auger electron spectroscopy of each element in depth direction,
FIG. 4 shows that a zirconium oxide film is formed as a buffer film on a Si substrate according to the present invention, and then a rare earth oxide superconductor Y
Ba-Cu oxide was formed and heated at 920°C in an oxygen atmosphere for 1
It is a graph of the relative intensity of the Auger electron spectra of each element in the depth direction after heat treatment for several hours. 1...0.2...Ba, 3...
...Y, 4...Cu %5...Si
, 6...Zr0 Agent's name Patent attorney Toshio Nakao
Figure $ (/I to ω N −5, (/l(”) Be) ) To, F: MuC> θ also Cu N−. ~ - DaPpeta8
Claims (8)
ルコニウム膜を緩衝膜として形成し、その上にＬｎ−Ａ
ｅ−Ｃｕ酸化物（但しＬｎはＹ）希土類、Ａｅはアルカ
リ土類）の薄膜を形成した後、酸素を有する雰囲気中で
熱処理を行うことによって前記酸化物薄膜を超電導化す
る超電導薄膜の形成方法。(1) A zirconium oxide film is formed as a buffer film on a semiconductor substrate by sputtering, and Ln-A
A method for forming a superconducting thin film, in which a thin film of e-Cu oxide (wherein Ln is Y) is a rare earth element, and Ae is an alkaline earth element) is formed, and then the oxide thin film is made superconductive by performing heat treatment in an atmosphere containing oxygen. .
Ｔｂ、Ｄｙ、Ｈｏ、Ｅｒ、Ｔｍ、Ｙｂ、Ｌｕの少なくと
も１つを用いたことを特徴とする特許請求範囲第（１）
項記載の超電導薄膜の形成方法。(2) Rare earths include La, Nd, Sm, Eu, Gd,
Claim (1) characterized in that at least one of Tb, Dy, Ho, Er, Tm, Yb, and Lu is used.
A method for forming a superconducting thin film as described in .
もひとつを含むことを特徴とする特許請求範囲第（１）
項記載の超電導薄膜の形成方法。(3) Claim No. (1) characterized in that the alkaline earth element contains at least one of Br, Ba, and Ca.
A method for forming a superconducting thin film as described in .
III−Ｖ族半導体基板であるＧａＡｓ及びＩｎＰを用い
ることを特徴とする特許請求範囲第（１）項記載の超電
導薄膜の形成方法。(4) Si and Ge, which are group IV semiconductor substrates, as a substrate;
A method for forming a superconducting thin film according to claim 1, characterized in that GaAs and InP, which are III-V group semiconductor substrates, are used.
を特徴とする特許請求範囲第（１）項記載の超電導薄膜
の形成方法。(5) A method for forming a superconducting thin film according to claim (1), wherein the heat treatment temperature is 600°C to 950°C.
パッタリング法により形成することを特徴とする特許請
求範囲第（１）項記載の起電導薄膜の形成方法。(6) A method for forming an electromotive conductive thin film according to claim (1), wherein the Ln-Ae-Cu oxide thin film is formed by a sputtering method.
空蒸着法により形成することを特徴とする特許請求範囲
第（１）項記載の超電導薄膜の形成方法。(7) A method for forming a superconducting thin film according to claim (1), wherein the Ln-Ae-Cu oxide thin film is formed by a vacuum evaporation method.
５μｍとしたことを特徴とする特許請求範囲第（１）項
記載の超電導薄膜の形成方法。(8) Thickness of zirconium oxide thin film: 1000 Å~
A method for forming a superconducting thin film according to claim (1), wherein the thickness is 5 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62268601A JPH01111718A (en) | 1987-10-23 | 1987-10-23 | Process for forming superconductive thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62268601A JPH01111718A (en) | 1987-10-23 | 1987-10-23 | Process for forming superconductive thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01111718A true JPH01111718A (en) | 1989-04-28 |
Family
ID=17460802
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62268601A Pending JPH01111718A (en) | 1987-10-23 | 1987-10-23 | Process for forming superconductive thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01111718A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0240992A (en) * | 1988-08-01 | 1990-02-09 | Mitsubishi Metal Corp | Structure of superconductor wiring |
| JPH0282585A (en) * | 1988-09-19 | 1990-03-23 | Res Dev Corp Of Japan | Superconducting wiring |
| US5084437A (en) * | 1990-02-28 | 1992-01-28 | Westinghouse Electric Corp. | Method for making high-current, ohmic contacts between semiconductors and oxide superconductors |
| US20200354827A1 (en) * | 2017-09-14 | 2020-11-12 | Komico Ltd. | Plasma etching apparatus member having improved plasma-resistant properties and manufacturing method therefor |
-
1987
- 1987-10-23 JP JP62268601A patent/JPH01111718A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0240992A (en) * | 1988-08-01 | 1990-02-09 | Mitsubishi Metal Corp | Structure of superconductor wiring |
| JPH0282585A (en) * | 1988-09-19 | 1990-03-23 | Res Dev Corp Of Japan | Superconducting wiring |
| US5084437A (en) * | 1990-02-28 | 1992-01-28 | Westinghouse Electric Corp. | Method for making high-current, ohmic contacts between semiconductors and oxide superconductors |
| US20200354827A1 (en) * | 2017-09-14 | 2020-11-12 | Komico Ltd. | Plasma etching apparatus member having improved plasma-resistant properties and manufacturing method therefor |
| US11827975B2 (en) * | 2017-09-14 | 2023-11-28 | Komico Ltd. | Photoplasma etching apparatus having improved plasma-resistant and manufacturing method therefor using a thermal diffusion phenomenon of a rare-earth metal thin film |
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