JP2759469B2 - Superconducting thin film fabrication method - Google Patents
Superconducting thin film fabrication methodInfo
- Publication number
- JP2759469B2 JP2759469B2 JP63323988A JP32398888A JP2759469B2 JP 2759469 B2 JP2759469 B2 JP 2759469B2 JP 63323988 A JP63323988 A JP 63323988A JP 32398888 A JP32398888 A JP 32398888A JP 2759469 B2 JP2759469 B2 JP 2759469B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- substrate
- superconducting thin
- bismuth
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Physical Vapour Deposition (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Description
【発明の詳細な説明】 ＜産業上の利用分野＞ 本発明はAl2O3基板上に緩衝薄膜層を介してBi−Sr−C
a−Cu−Ｏ又はBi−Pb−Sr−Ca−Cu−Ｏであるビスマス
系高温超伝導酸化物を形成してなる超伝導薄膜構造及び
その作製方法に関するものである。BACKGROUND OF THE INVENTION <FIELD OF THE INVENTION> The present invention is Al 2 O 3 via a buffer thin film layer on a substrate Bi-Sr-C
The present invention relates to a superconducting thin film structure formed by forming a bismuth-based high-temperature superconducting oxide, which is a-Cu-O or Bi-Pb-Sr-Ca-Cu-O, and a method for producing the same.
＜従来技術＞ Bi−Sr−Ca−Cu−Ｏ又はBi−Pb−Sr−Ca−Cu−Ｏから
なるビスマス系超伝導薄膜は、約85K、120Kの２つの高
い臨界温度を示し、かかる超伝導体を薄膜化することに
よってディバイス等エレクトロニクス分野への応用展開
が期待されている。<Prior art> A bismuth-based superconducting thin film composed of Bi-Sr-Ca-Cu-O or Bi-Pb-Sr-Ca-Cu-O shows two high critical temperatures of about 85K and 120K, and such superconductivity is high. The application development to the electronics field such as devices is expected by thinning the body.
ところで、前記高温超伝導薄膜の形成は一般に単結晶
MgO基板又は単結晶SrTiO3基板上で行われている。Incidentally, the formation of the high-temperature superconducting thin film is generally a single crystal.
It is performed on a MgO substrate or a single crystal SrTiO 3 substrate.
これは単結晶MgO又は単結晶SrTiO3とビスマス系酸化
物がアニールの際に反応がほとんどなく、配向性がよい
ためである。This is because the single crystal MgO or single crystal SrTiO 3 and the bismuth-based oxide hardly react during annealing and have good orientation.
しかし、かかる基板は極めて高価で実用面で問題があ
った。一方、工業的に量産可能で安価なAl2O3を基板に
用いることが考えられるが、このものはビスマス系酸化
物とアニールの際に反応してビスマス系薄膜を形成す
る。そしてこの薄膜は、絶縁体もしくは高い臨界温度を
示さない超伝導体であった。However, such a substrate is extremely expensive and has a problem in practical use. On the other hand, it is conceivable to use inexpensive Al 2 O 3 for the substrate, which can be mass-produced industrially, but this reacts with a bismuth-based oxide during annealing to form a bismuth-based thin film. This thin film was an insulator or a superconductor that did not show a high critical temperature.
このため、Al2O3を基板としては用いることができな
いとされていた。For this reason, it has been said that Al 2 O 3 cannot be used as a substrate.
＜本発明が解決しようとする問題点＞ 本発明は、従来困難とされていたAl2O3基板上に高い
臨界温度を示すビスマス系酸化物薄膜を形成することを
可能とする手段を与えようとするものである。<Problems to be Solved by the Present Invention> The present invention will provide a means for forming a bismuth-based oxide thin film having a high critical temperature on an Al 2 O 3 substrate, which has been considered difficult. It is assumed that.
＜問題点を解決するための手段＞ Al2O3から選択された焼結体もしくは単結晶体を基板
に用い、その基板上にＹ酸化物もしくはLa酸化物又はＹ
金属もしくはLa金属のいずれかからなる緩衝薄膜を形成
してアニールした後に、Bi−Sr−Ca−Cu−Ｏ又はBi−Pb
−Sr−Ca−Cu−Ｏの成膜組成であるビスマス系超伝導薄
膜を形成し、アニールすることにより高い臨界温度を示
す酸化物超伝導薄膜を得るようにしたものである。<Means for Solving the Problems> A sintered body or a single crystal body selected from Al 2 O 3 is used for a substrate, and a Y oxide, a La oxide, or a Y oxide is formed on the substrate.
After forming a buffer thin film consisting of either metal or La metal and annealing, Bi-Sr-Ca-Cu-O or Bi-Pb
A bismuth-based superconducting thin film having a film-forming composition of -Sr-Ca-Cu-O is formed and annealed to obtain an oxide superconducting thin film having a high critical temperature.
上述の緩衝薄膜と超伝導薄膜の形成法としては、スパ
ッタリング法，蒸着法等種々の方法を採用できる。Various methods such as a sputtering method and a vapor deposition method can be adopted as a method of forming the above-mentioned buffer thin film and superconducting thin film.
＜作用＞ 酸化物焼結体基板又は単結晶基板とビスマス系超伝導
薄膜との間に、緩衝薄膜層を形成することにより、アニ
ール時の基板とビスマス系超伝導薄膜との間の反応をな
くし、高い臨界温度を示す酸化物超伝導薄膜を得ること
ができる。<Function> By forming a buffer thin film layer between the oxide sintered body substrate or single crystal substrate and the bismuth-based superconducting thin film, the reaction between the substrate and the bismuth-based superconducting thin film during annealing is eliminated. Thus, an oxide superconducting thin film exhibiting a high critical temperature can be obtained.
＜実施例＞ ［実施例一］ 99.9％の高純度Al2O3焼結体基板上にスパッタリング
法によりＹ金属（イットリウム）の緩衝薄膜層0.2μｍ
を形成し、大気中で1650℃でアニールした後、さらにBi
−Sr−Ca−Cu−Ｏ薄膜0.1μｍを形成し、N2/O2混合雰囲
気中844℃で５時間アニールし、超伝導薄膜を得た。こ
の超伝導薄膜について四端子法にて抵抗温度特性を測定
したところ90Kで抵抗零となり超伝導状態を確認した。<Example 1> A buffer thin film layer of Y metal (yttrium) 0.2 μm on a 99.9% high-purity Al 2 O 3 sintered substrate by a sputtering method.
After annealing at 1650 ° C in air,
A —Sr—Ca—Cu—O thin film of 0.1 μm was formed and annealed at 844 ° C. for 5 hours in an N 2 / O 2 mixed atmosphere to obtain a superconducting thin film. The resistance temperature characteristics of this superconducting thin film were measured by the four-terminal method, and the resistance became zero at 90 K, confirming the superconducting state.
［実施例二］ Al2O3焼結体基板上にスパッタリング法によりLa2O
3（La酸化物）の緩衝薄膜層を形成し、大気中で1600℃
でアニールした後、さらにBi−Sr−Ca−Cu−Ｏ薄膜を形
成しN2/O2混合雰囲気中840℃で３時間アニールし、超伝
導薄膜を得た。この超伝導薄膜について四端子法にて抵
抗温度特性を測定したところ添付図面のように79Kで抵
抗零となり超伝導状態を確認した。Example 2 La 2 O was formed on an Al 2 O 3 sintered body substrate by sputtering.
3 A buffer thin film layer of (La oxide) is formed.
After that, a Bi—Sr—Ca—Cu—O thin film was further formed and annealed at 840 ° C. for 3 hours in an N 2 / O 2 mixed atmosphere to obtain a superconducting thin film. Resistance temperature characteristics of this superconducting thin film were measured by a four-terminal method, and the resistance became zero at 79 K as shown in the attached drawing, and the superconducting state was confirmed.
＜効果＞ 本発明は上述の実施例で明らかにしたように、工業的
に量産可能で安価なAl2O3を基板に用いて、高い臨界温
度を示すビスマス系超伝導薄膜構造を形成することがで
きる優れた効果がある。<Effect> As has been clarified in the above-described embodiment, the present invention is to form a bismuth-based superconducting thin film structure exhibiting a high critical temperature using Al 2 O 3 which is industrially mass-produced and inexpensive for a substrate. There is an excellent effect that can be.
添付図面は、実施例二の方法で作成された超伝導薄膜構
造の抵抗−温度特性を示すグラフである。The accompanying drawing is a graph showing the resistance-temperature characteristics of the superconducting thin film structure prepared by the method of Example 2.
フロントページの続き (56)参考文献 特開 平２−51806（ＪＰ，Ａ) 特開 平２−112109（ＪＰ，Ａ) 特開 昭63−239738（ＪＰ，Ａ) 特開 昭63−283086（ＪＰ，Ａ) 特開 昭63−257127（ＪＰ，Ａ) 特開 昭63−248019（ＪＰ，Ａ)Continuation of the front page (56) References JP-A-2-51806 (JP, A) JP-A-2-112109 (JP, A) JP-A-63-239738 (JP, A) JP-A-63-283086 (JP) , A) JP-A-63-257127 (JP, A) JP-A-63-248019 (JP, A)
Claims (2)
れかからなる緩衝薄膜層を形成し、アニールする工程
と、該緩衝薄膜層を形成した基板上にビスマス系超伝導
薄膜を形成し、アニールする工程とを有することを特徴
とする超伝導薄膜の作製方法。1. A step of forming a buffer thin film layer made of either Y oxide or Y metal on an Al 2 O 3 substrate and annealing the same, and a bismuth-based superconducting thin film on the substrate on which the buffer thin film layer is formed. Forming a film and annealing the film.
れかからなる緩衝薄膜層を形成し、アニールする工程
と、該緩衝薄膜層を形成した基板上にビスマス系超伝導
薄膜を形成し、アニールする工程とを有することを特徴
とする超伝導薄膜の作製方法。2. A step of forming a buffer thin film layer made of either La oxide or La metal on an Al 2 O 3 substrate and annealing the same, and a bismuth-based superconducting thin film on the substrate on which the buffer thin film layer is formed. Forming a film and annealing the film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63323988A JP2759469B2 (en) | 1988-12-21 | 1988-12-21 | Superconducting thin film fabrication method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63323988A JP2759469B2 (en) | 1988-12-21 | 1988-12-21 | Superconducting thin film fabrication method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02168515A JPH02168515A (en) | 1990-06-28 |
| JP2759469B2 true JP2759469B2 (en) | 1998-05-28 |
Family
ID=18160868
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63323988A Expired - Fee Related JP2759469B2 (en) | 1988-12-21 | 1988-12-21 | Superconducting thin film fabrication method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2759469B2 (en) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2563315B2 (en) * | 1987-03-27 | 1996-12-11 | 松下電器産業株式会社 | Superconductor wire and method of manufacturing the same |
| JPS63248019A (en) * | 1987-04-03 | 1988-10-14 | Hitachi Ltd | Manufacture of oxide superconductive thin film |
| JP2702711B2 (en) * | 1987-04-13 | 1998-01-26 | 松下電器産業株式会社 | Manufacturing method of thin film superconductor |
| JPS63283086A (en) * | 1987-05-14 | 1988-11-18 | Furukawa Electric Co Ltd:The | Manufacture of superconducting thin film |
| JPH02112109A (en) * | 1988-03-25 | 1990-04-24 | Fujitsu Ltd | Superconductor film and manufacture thereof |
| JPH0251806A (en) * | 1988-08-12 | 1990-02-21 | Mitsui Mining & Smelting Co Ltd | Superconducting ceramic laminated body and manufacture thereof |
-
1988
- 1988-12-21 JP JP63323988A patent/JP2759469B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02168515A (en) | 1990-06-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5084438A (en) | Electronic device substrate using silicon semiconductor substrate | |
| CA1326976C (en) | Superconducting member | |
| JP3587956B2 (en) | Oxide superconducting wire and its manufacturing method | |
| US5075282A (en) | Printing method of forming oxide superconducting films on La2 Cu O.sub. | |
| JP2759469B2 (en) | Superconducting thin film fabrication method | |
| JP3096050B2 (en) | Method for manufacturing semiconductor device | |
| JP2517085B2 (en) | Superconducting thin film | |
| JPS63301424A (en) | Manufacture of oxide superconductor membrane | |
| JPH0272685A (en) | Method for forming weakly coupled superconductor part | |
| JP2506798B2 (en) | Superconductor | |
| JP2905493B2 (en) | Method for producing oxide high-temperature superconductor | |
| JP3090709B2 (en) | Oxide superconducting wire and method of manufacturing the same | |
| JP3258824B2 (en) | Metal oxide material, superconducting junction element using the same, and substrate for superconducting element | |
| JPS63239740A (en) | Manufacture for superconductive compound thin film | |
| JP3058515B2 (en) | Superconducting Josephson device and its manufacturing method | |
| JPH01280380A (en) | Semiconductor substrate having superconductor layer | |
| JP2821885B2 (en) | Superconducting thin film forming method | |
| JP3038485B2 (en) | Bi-based oxide superconducting thin film | |
| JP2819743B2 (en) | Preparation method of high temperature superconducting thin film | |
| JPH05190926A (en) | Forming method of superconducting device and superconducting device formed by the same | |
| JP2888650B2 (en) | Superconducting member manufacturing method | |
| JP2840475B2 (en) | Method for producing oxide superconducting thin film | |
| JPH04179004A (en) | Oxide superconductive tape conductor | |
| JPH05110149A (en) | Oxide superconducting device | |
| JPH01179779A (en) | Method for protecting multi-ply oxide superconductor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |