JPH02160266A - Electric field curtain device - Google Patents
Electric field curtain deviceInfo
- Publication number
- JPH02160266A JPH02160266A JP63316014A JP31601488A JPH02160266A JP H02160266 A JPH02160266 A JP H02160266A JP 63316014 A JP63316014 A JP 63316014A JP 31601488 A JP31601488 A JP 31601488A JP H02160266 A JPH02160266 A JP H02160266A
- Authority
- JP
- Japan
- Prior art keywords
- electric field
- piezoelectric element
- electrodes
- field curtain
- curtain device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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- XGRPNCOKLIMKBN-UHFFFAOYSA-M trimethylstannanylium;iodide Chemical compound C[Sn](C)(C)I XGRPNCOKLIMKBN-UHFFFAOYSA-M 0.000 description 1
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Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
この発明は、互いに絶縁された複数の電極に交番電圧を
印加して不平等交番電界を形成する電界カーテン装置に
関するものであり、例えば、電子写真装置における現像
装置等において、トナー等の粉粒体を移送させる手段と
して使用するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to an electric field curtain device that applies an alternating voltage to a plurality of electrodes that are insulated from each other to form an unequal alternating electric field. It is used as a means for transporting powder such as toner in a developing device or the like in a photographic device.
[従来技術およびその問題点]
従来より、電界カーテン装置を電子写真装置の現像装置
等において、トナー等の粉粒体を移送させるのに用いる
ことが検討されている。[Prior Art and its Problems] Conventionally, it has been considered to use an electric field curtain device to transport powder such as toner in a developing device of an electrophotographic device or the like.
ここで、従来の電界カーテン装置は、互いに絶縁された
複数の電極に交番電圧を印加して不平等電界を形成し、
接触帯電されたトナー等の粉粒体を、この電界カーテン
の作用によって搬送させるようになっている。Here, the conventional electric field curtain device applies an alternating voltage to a plurality of electrodes that are insulated from each other to form an unequal electric field.
The contact-charged powder such as toner is transported by the action of this electric field curtain.
しかし、このような電界カーテンの作用のみでは、トナ
ー等の粉粒体の搬送性が充分ではなかった。However, the effect of such an electric field curtain alone has not been sufficient to convey powder particles such as toner.
このため、近年においては、特開昭63−13067号
公報に示すように、上記のような電界カーテン装置にお
いて、そのカーテン基板又はその−部に圧電材を設け、
電界カーテンによる作用と共に、この圧電材を振動させ
て、粉粒体の搬送性を高めるようにした電界カーテン装
置が開発された。For this reason, in recent years, as shown in Japanese Unexamined Patent Publication No. 63-13067, piezoelectric materials are provided on the curtain substrate or a portion thereof in the electric field curtain device as described above.
An electric field curtain device has been developed that uses the action of an electric field curtain and vibrates this piezoelectric material to improve the transportability of powder particles.
しかし、このような電界カーテン装置においても、搬送
を行う粉粒体における接触帯電性が悪く、このため、粉
粒体の輸送立ち上がりにかなりの時間を要し、現像装置
等に用いた場合に、その応答性が悪いという問題があっ
た。However, even in such an electric field curtain device, the contact charging property of the powder to be transported is poor, and for this reason, it takes a considerable amount of time to start transporting the powder, and when used in a developing device, etc. There was a problem that the response was poor.
また、上記のようにカーテン基板又はその−部に用いる
圧電材は、−iに高湿度下で劣化しやすく、また高湿度
下でリークを発生して、搬送するトナー等の粉粒体をも
劣化させるという問題もあった。In addition, as mentioned above, the piezoelectric material used for the curtain substrate or its parts is susceptible to deterioration under high humidity, and may leak under high humidity, causing particles such as toner to be transported. There was also the problem of deterioration.
さらに、従来の電界カーテン装置においては、粉粒体の
輸送量や荷電量を制御することが困難であり、さまざま
な種類の現像装置に対応させることができなかった。Furthermore, in the conventional electric field curtain device, it is difficult to control the amount of transport and the amount of charge of powder particles, and it is not possible to adapt the device to various types of developing devices.
[発明が解決しようとする課題]
この発明は、上記のような電界カーテン装置における問
題を解決することを課題とするものである。[Problems to be Solved by the Invention] An object of the present invention is to solve the problems in the electric field curtain device as described above.
すなわち、この発明においては、粉粒体の接触帯電性を
高め、粉粒体の輸送立ち上がり速度を向上させると共に
、高湿度下での圧電素子の劣化を抑制し、さらに粉粒体
の輸送量や荷電量の制御が容易に行える電界カーテン装
置の提供を目的とするものである。That is, in this invention, the contact electrification of the powder and granules is improved, the transportation start-up speed of the powder and granules is improved, and the deterioration of the piezoelectric element under high humidity is suppressed, and the amount of transportation of the powder and granules is reduced. The object of the present invention is to provide an electric field curtain device in which the amount of charge can be easily controlled.
[課題を解決するための手段]
この発明は、上記のような課題を解決するため、互いに
絶縁された複数の電極に交番電圧を印加して、不平等交
番電界を形成する電界カーテン装置において、上記電極
に接するようにして圧電素子を設けると共に、表面側に
非晶質炭素膜を設けるようにしたのである。 ここで、
上記電極としては、銅、金、アルミニウム、クロム、ニ
ッケル、白金、ITO,カーボン等の導電性材料を使用
することができる。[Means for Solving the Problems] In order to solve the above problems, the present invention provides an electric field curtain device that applies an alternating voltage to a plurality of mutually insulated electrodes to form an unequal alternating electric field. A piezoelectric element is provided in contact with the electrode, and an amorphous carbon film is provided on the surface side. here,
As the electrode, conductive materials such as copper, gold, aluminum, chromium, nickel, platinum, ITO, and carbon can be used.
一方、電極を絶縁させる物質としては、例えば合成樹脂
、ガラス、絶縁性セラミックス等を用いることができる
。On the other hand, as the material for insulating the electrodes, for example, synthetic resin, glass, insulating ceramics, etc. can be used.
また、上記圧電素子としては、ピエゾ素子。Moreover, as the piezoelectric element, a piezo element is used.
ニオブ酸リチウム等の一般に使用されている圧電材料を
用いることができる。Commonly used piezoelectric materials such as lithium niobate can be used.
そして、この圧電素子を上記電極に接するように設ける
にあたっては、通常、電極を上記のような絶縁材料で構
成された誘電体層の表面に露出するように設け、この電
極と接するようにして、上記のような圧電素子の膜を上
記誘電体層上に設けるようにする。When the piezoelectric element is provided in contact with the electrode, the electrode is usually provided so as to be exposed on the surface of the dielectric layer made of the above-mentioned insulating material, and in contact with the electrode, A piezoelectric element film as described above is provided on the dielectric layer.
さらに、表面側に設ける非晶質炭素膜としては、少なく
とも水素原子を含有するプラズマ有機重合膜(以下、a
−CM!と称する。)を用いるようにするが、特にハロ
ゲン原子を含有するプラズマ有機重合膜を用いることが
、粉粒体の荷電性の点で望ましい。 ゛
ここで、このようなa−C膜をグロー放電によって形成
するにあたっては、原料ガスとして、炭化水素ガス及び
必要に応じてハロゲン化合物ガスを用い、またキャリア
ガスとしては、−mに常用される水素ガス或はアルゴン
ガス等を用いるようにする。Furthermore, as the amorphous carbon film provided on the surface side, a plasma organic polymer film (hereinafter referred to as a
-CM! It is called. ), but it is particularly desirable to use a plasma organic polymer film containing halogen atoms from the viewpoint of chargeability of the powder particles.゛Here, when forming such an a-C film by glow discharge, a hydrocarbon gas and, if necessary, a halogen compound gas are used as the raw material gas, and as a carrier gas, a gas commonly used for -m is used. Hydrogen gas or argon gas should be used.
ここで、上記炭化水素ガスの相状態は、常温常圧におい
て必ずしも気相で有る必要は無く、加熱或は減圧等によ
り溶融、蒸発、昇華等を経て気化し得るものであれば、
液相でも固相でも使用可能である。Here, the phase state of the hydrocarbon gas does not necessarily have to be a gas phase at room temperature and normal pressure, but as long as it can be vaporized through melting, evaporation, sublimation, etc. by heating or reduced pressure, etc.
It can be used in either liquid phase or solid phase.
また、この炭化水素ガスにおける炭化水素としては、例
えば、飽和炭化水素、不飽和炭化水素、脂環式炭化水素
、芳香族炭化水素等が用いられる。Moreover, as the hydrocarbon in this hydrocarbon gas, for example, saturated hydrocarbon, unsaturated hydrocarbon, alicyclic hydrocarbon, aromatic hydrocarbon, etc. are used.
ここで、使用可能な炭化水素の種類は多いが、飽和炭化
水素としては、例えば、メタン、エタン、プロパン、ブ
タン、ペンタン、ヘキサン、ヘプタン、オクタン、イソ
ブタン、イソペンタン、ネオペンタン、イソヘキサン、
ネオヘキサン、ジメチルブタン、メチルヘキサン、エチ
ルペンタン、ジメチルペンタン、トリブタン、メチルへ
ブタン、ジメチルヘキサン、トリメチルペンタン、イソ
ナノン等が用いられる。There are many types of hydrocarbons that can be used, but examples of saturated hydrocarbons include methane, ethane, propane, butane, pentane, hexane, heptane, octane, isobutane, isopentane, neopentane, isohexane,
Neohexane, dimethylbutane, methylhexane, ethylpentane, dimethylpentane, tributane, methylhebutane, dimethylhexane, trimethylpentane, isonanone, etc. are used.
また、不飽和炭化水素としては、例えば、エチレン、プ
ロピレン、イソブチレン、ブテン、ペンテン、メチルブ
テン、ヘキセン、テトラメチルエチレン、ヘプテン、オ
クテン、アレン、メチルアレン、ブタジェン、ペンタジ
ェン、ヘキサジエン、シクロペンタジェン、オシメン、
アロシメン、ミルセン、ヘキサトリエン、アセチレン、
ジアセチレン、メチルアセチレン、ブチン、ペンチン、
ヘキシン、ヘプチン、オクチン等が用いられる。Examples of unsaturated hydrocarbons include ethylene, propylene, isobutylene, butene, pentene, methylbutene, hexene, tetramethylethylene, heptene, octene, allene, methylalene, butadiene, pentadiene, hexadiene, cyclopentadiene, ocimene,
Allocimene, myrcene, hexatriene, acetylene,
diacetylene, methylacetylene, butyne, pentyne,
Hexine, heptine, octyne, etc. are used.
また、脂環式炭化水素としては、例えば、シクロプロパ
ン、シクロブタン、シクロペンタン、シクロヘキサン、
シクロへブタン、シクロオクタン、シクロプロペン、シ
クロブテン、シクロペンテン、シクロヘキセン、シクロ
ヘプテン、シクロオクテン、リモネン、テルビルン、フ
エランドレン、シルベストレン、ツエン、カレン、ピネ
ン、ボルニレン、カンフエン、フェンチェン、シクロブ
タンチエン、トリシクレン、ピサボレン、ジンギベレン
、クルクメン、フムレン、カジネンセスキベニヘン、セ
リネン、カリオフィレン、サンタレン、セドレン、カン
ホレン、フィロクラテン、ボドカルブレン、ミレン等が
用いられる。In addition, examples of alicyclic hydrocarbons include cyclopropane, cyclobutane, cyclopentane, cyclohexane,
Cyclohebutane, cyclooctane, cyclopropene, cyclobutene, cyclopentene, cyclohexene, cycloheptene, cyclooctene, limonene, terbirun, phellandrene, sylvestrene, thuene, carene, pinene, bornylene, camphuene, fenchen, cyclobutanethien, tricyclene, pisabolene, Zingiberene, curcumene, humulene, kajinensesesquivenichen, selinene, caryophyllene, santarene, cedrene, campholene, phylloclatene, bodocarbrene, mylene, etc. are used.
また、芳香族炭化水素としては、例えば、ベンゼン、ト
ルエン、キシレン、ヘミメリテン、プソイドクメン、メ
シチレン、プレニテン、イソジュレン、ジュレン、ペン
タメチルベンゼン、ヘキサメチルベンゼン、エチルベン
ゼン、プロピルベンゼン、クメン、スチレン、ビフェニ
ル、テルフェニル、ジフェニルメタン、トリフェニルメ
タン、ジベンジル、スチルベン、インデン、ナフタリン
、テトラリン、アントラセン、フェナントレン等が用い
られる。Examples of aromatic hydrocarbons include benzene, toluene, xylene, hemimelithene, pseudocumene, mesitylene, prenitene, isodurene, durene, pentamethylbenzene, hexamethylbenzene, ethylbenzene, propylbenzene, cumene, styrene, biphenyl, and terphenyl. , diphenylmethane, triphenylmethane, dibenzyl, stilbene, indene, naphthalene, tetralin, anthracene, phenanthrene, etc. are used.
ここで、上記a−C膜中に含まれる水素原子の量は、炭
素原子と水素原子の総量に対して概ね30〜60原子%
程度である。Here, the amount of hydrogen atoms contained in the a-C film is approximately 30 to 60 at% with respect to the total amount of carbon atoms and hydrogen atoms.
That's about it.
また、このa−C膜中に含まれる水素原子の量は、成膜
装置の形態並びに成膜時の条件により変化し、水素量が
低くなる場合としては、例えば、基板温度を高くする、
圧力を低くする、原料炭化水素ガスの希釈率を低くする
、水素含有率の低い原料ガスを用いる、印加電力を高く
する、交番電界の周波数を低くする、交番電界に重畳せ
しめた直流電界強度を高くする等の場合が挙げられる。Further, the amount of hydrogen atoms contained in this a-C film changes depending on the form of the film forming apparatus and the conditions during film forming, and the amount of hydrogen can be lowered by, for example, increasing the substrate temperature.
Lowering the pressure, lowering the dilution rate of the raw material hydrocarbon gas, using a raw material gas with a lower hydrogen content, increasing the applied power, lowering the frequency of the alternating electric field, increasing the strength of the DC electric field superimposed on the alternating electric field. Examples include raising the price.
そして、この発明においては、上記炭化水素ガスの他に
、原料ガスとしてハロゲン化合物ガスを用い、a−C膜
中に少なくともハロゲン原子を添加させるようにするこ
とが望ましい。In the present invention, it is desirable to use a halogen compound gas as a raw material gas in addition to the above-mentioned hydrocarbon gas, and to add at least halogen atoms into the a-C film.
ここで、上記ハロゲン原子は、弗素原子、塩素原子、臭
素原子、沃素原子のいずれであってもよく、また上記ハ
ロゲン化合物ガスにおける相状態は、常温常圧において
必ずしも気相で有る必要はなく、加熱或は減圧等により
溶融、蒸発、昇華等を経て気化し得るものであれば、液
相でも固相でも使用可能である。Here, the halogen atom may be any of a fluorine atom, a chlorine atom, a bromine atom, or an iodine atom, and the phase state of the halogen compound gas does not necessarily have to be a gas phase at room temperature and normal pressure, It can be used in either liquid or solid phase as long as it can be vaporized through melting, evaporation, sublimation, etc. by heating or reduced pressure.
そして、上記ハロゲン化合物としては、例えば、弗素、
塩素、臭素、沃素、弗化水素、弗化塩素、弗化臭素、弗
化沃素、塩化水素、塩化臭素、塩化沃素、臭化水素、臭
化沃素、沃化水素等の無機化合物、ハロゲン化アルキル
、ハロゲン化アルキル金属、ハロゲン化アリール、ハロ
ゲン化珪酸エステル、ハロゲン化スチレン、ハロゲン化
ポリメチレン、ハロゲン置換オルガノシラン、へロホル
ム等の有機化合物が用いられる。Examples of the above halogen compounds include fluorine,
Inorganic compounds such as chlorine, bromine, iodine, hydrogen fluoride, chlorine fluoride, bromine fluoride, iodine fluoride, hydrogen chloride, bromine chloride, iodine chloride, hydrogen bromide, iodine bromide, hydrogen iodide, alkyl halides Organic compounds such as halogenated alkyl metal, halogenated aryl, halogenated silicate ester, halogenated styrene, halogenated polymethylene, halogen-substituted organosilane, and heroform are used.
ここで、ハロゲン化アルキルとしては、例えば、フッ化
メチル、塩化メチル、臭化メチル、ヨウ化メチル、フッ
化エチル、塩化エチル、臭化エチル、ヨウ化エチル、フ
ッ化プロピル、塩化プロピル、臭化プロピル、ヨウ化プ
ロピル、フッ化ブチル、塩化ブチル、臭化ブチル、ヨウ
化ブチル、フッ化アミル、塩化アミル、臭化アミル、ヨ
ウ化アミル、フッ化ヘキシル、塩化ヘキシル、臭化ヘキ
シル、ヨウ化ヘキシル、フッ化へブチル、塩化ヘプチル
、臭化へブチル、ヨウ化へブチル等が用いられる。Here, examples of the alkyl halide include methyl fluoride, methyl chloride, methyl bromide, methyl iodide, ethyl fluoride, ethyl chloride, ethyl bromide, ethyl iodide, propyl fluoride, propyl chloride, and bromide. Propyl, propyl iodide, butyl fluoride, butyl chloride, butyl bromide, butyl iodide, amyl fluoride, amyl chloride, amyl bromide, amyl iodide, hexyl fluoride, hexyl chloride, hexyl bromide, hexyl iodide , heptyl fluoride, heptyl chloride, heptyl bromide, heptyl iodide, etc. are used.
また、ハロゲン化アルキル金属としては、例えば、塩化
ジメチルアルミニウム、臭化ジメチルアルミニウム、塩
化ジエチルアルミニウム、ヨウ化ジエチルアルミニウム
、二塩化メチルアルミニウム、三臭化メチルアルミニウ
ム、ニョウ化エチルアルミニウム、塩化トリメチルスズ
、臭化トリメチルスズ、ヨウ化トリメチルスズ、塩化ト
リエチルスズ、臭化トリエチルスズ、二塩化ジメチルス
ズ、二臭化ジメチルスズ、ニヨウ化ジメチルスズ、二塩
化ジエチルスズ、三臭化ジエチルスズ、ニョウ化ジエチ
ルスズ、三塩化メチルスズ、三臭化メチルスズ、三ヨウ
化メチルスズ、三臭化エチルスズ等が用いられる。Examples of alkyl metal halides include dimethylaluminum chloride, dimethylaluminum bromide, diethylaluminum chloride, diethylaluminum iodide, methylaluminum dichloride, methylaluminum tribromide, ethylaluminum diodide, trimethyltin chloride, Trimethyltin chloride, trimethyltin iodide, triethyltin chloride, triethyltin bromide, dimethyltin dichloride, dimethyltin dibromide, dimethyltin iodide, diethyltin dichloride, diethyltin tribromide, diethyltin diodide, methyltin trichloride, tri-odor Methyltin oxide, methyltin triiodide, ethyltin tribromide, etc. are used.
また、ハロゲン化アリールとしては、例えば、フルオル
ベンゼン、クロルベンゼン、ブロムベンゼン、ヨードベ
ンゼン、クロルトルエン、ブロムトルエン、クロルナフ
タリン、ブロムナフタリン等が用いられる。Further, as the halogenated aryl, for example, fluorobenzene, chlorobenzene, brombenzene, iodobenzene, chlorotoluene, bromotoluene, chlornaphthalene, bromnaphthalene, etc. are used.
また、ハロゲン化珪酸エステルとしては、例えば、モノ
メトキシトリクロルシラン、ジメトキシジクロルシラン
、トリメトキシモノクロルシラン、モノエトキシトリク
ロルシラン、ジェトキシジクロルシラン、トリエトキシ
モノクロルシラン、モノアリロキシトリクロルシラン、
ジアリロキシジクロルシラン、トリアリロキシモノクロ
ルシラン等が用いられる。In addition, examples of the halogenated silicate ester include monomethoxytrichlorosilane, dimethoxydichlorosilane, trimethoxymonochlorosilane, monoethoxytrichlorosilane, jetoxydichlorosilane, triethoxymonochlorosilane, monoallyloxytrichlorosilane,
Diaryloxydichlorosilane, triaryloxymonochlorosilane, etc. are used.
また、ハロゲン化スチレンとしては、例えば、クロルス
チレン、ブロムスチレン、ヨードスチレン、フルオルス
チレン等が用いられる。Further, as the halogenated styrene, for example, chlorostyrene, bromustyrene, iodostyrene, fluorostyrene, etc. are used.
また、ハロゲン化ポリメチレンとしては、例えば、塩化
メチレン、臭化メチレン、ヨウ化メチレン、塩化エチレ
ン、臭化エチレン、ヨウ化エチレン、塩化トリメチレン
、臭化トリメチレン、ヨウ化トリメチレン、ジ塩化ブタ
ン、ジ臭化ブタン、ショウ化ブタン、ジ塩化ペンタン、
ジ臭化ペンタン、ショウ化ペンタン、ジ塩化ヘキサン、
ジ臭化ヘキサン、ショウ化ヘキサン、ジ塩化へブタン、
ジ臭化へブタン、ショウ化へブタン、ジ塩化オクタン、
ジ臭化オクタン、ショウ化オクタン、ジ塩化ノナン、ジ
臭化ノナン等が用いられる。Examples of halogenated polymethylene include methylene chloride, methylene bromide, methylene iodide, ethylene chloride, ethylene bromide, ethylene iodide, trimethylene chloride, trimethylene bromide, trimethylene iodide, butane dichloride, and dibromide. Butane, butane shoide, pentane dichloride,
Pentane dibromide, pentane shoide, hexane dichloride,
Hexane dibromide, hexane dichloride, hexane dichloride,
Hebutane dibromide, hebutane dibromide, octane dichloride,
Octane dibromide, octane shoide, nonane dichloride, nonane dibromide, etc. are used.
また、ハロゲン置換オルガノシランとしては、例えば、
クロルメチルトリメチルシラン、ジクロルメチルトリメ
チルシラン、ビスクロルメチルジメチルシラン、トリス
クロルメチルメチルシラン、クロルエチルトリエチルシ
ラン、ジクロルエチルトリエチルシラン、ブロムメチル
トリメチルシラン、ヨードメチルトリメチルシラン、ビ
スヨードメチルジメチルシラン、クロルフェニルトリメ
チルシラン、ブロムフェニルトリメチルシラン、クロル
フェニルトリエチルシラン、ブロムフェニルトリエチル
シラン、ヨードフェニルトリエチルシラン等が用いられ
る。In addition, examples of halogen-substituted organosilanes include:
Chlormethyltrimethylsilane, dichloromethyltrimethylsilane, bischloromethyldimethylsilane, trischlormethylmethylsilane, chlorethyltriethylsilane, dichloroethyltriethylsilane, bromomethyltrimethylsilane, iodomethyltrimethylsilane, bisiodomethyldimethylsilane, Chlorphenyltrimethylsilane, bromphenyltrimethylsilane, chlorphenyltriethylsilane, bromphenyltriethylsilane, iodophenyltriethylsilane, etc. are used.
また、へロホルムとしては、例えば、フルオロホルム、
クロロホルム、ブロモホルム、ヨードホルム等が用いら
れる。In addition, examples of heroform include fluoroform,
Chloroform, bromoform, iodoform, etc. are used.
ここで、このa−C膜中において、化学的修飾物質とし
て含有させるハロゲン原子の量は、主に、プラズマ反応
を行う反応室に導く前記ハロゲン化合物ガスの導入量を
増減することにより制御することができる。すなわち、
ハロゲン化合物ガスの導入量を増大させれば、このa−
C膜中におけるハロゲン原子の添加量が高くなり、逆に
ハロゲン化合物の導入量を減少させれば、このa−C膜
中におけるハロゲン原子の添加量が低くなる。Here, the amount of halogen atoms contained as a chemical modifier in this a-C film is mainly controlled by increasing or decreasing the amount of the halogen compound gas introduced into the reaction chamber where the plasma reaction is performed. Can be done. That is,
If the amount of halogen compound gas introduced is increased, this a-
If the amount of halogen atoms added to the C film increases, and conversely, the amount of halogen compounds introduced is decreased, the amount of halogen atoms added to the a-C film decreases.
ここで、このa−C膜中におけるハロゲン原子含有量は
、1原子%以上であればよく、最大含有量については、
特に制限はないが、a−C膜の構造及びグロー放電とい
う製造面から必然的に定まる。Here, the halogen atom content in this a-C film may be 1 atomic % or more, and the maximum content is as follows:
Although there is no particular restriction, it is inevitably determined from the manufacturing aspect of the structure of the a-C film and glow discharge.
また、この発明において上記a−C膜の膜厚は、概ね0
.01〜5μmが好適である。すなわち、このa−C膜
の膜厚が0.01μmより薄い場合には、その下に設け
られた上記圧電素子が湿気の影響を受けやすくなり、好
適な耐湿性が確保できない一方、膜厚が5μmより厚い
場合には、上記圧電素子との接着性が悪くなるおそれが
ある。Further, in this invention, the film thickness of the a-C film is approximately 0.
.. 01 to 5 μm is suitable. That is, if the film thickness of this a-C film is thinner than 0.01 μm, the piezoelectric element provided below becomes susceptible to the influence of moisture, making it impossible to ensure suitable moisture resistance. If it is thicker than 5 μm, there is a risk that the adhesiveness with the piezoelectric element may deteriorate.
また、このa−C膜中に、第111A族や第VA族の原
子をドープさせて極性制御を行うようにすると、接触す
るトナー等の粉粒体の種類に応じた物性制御が行えるよ
うになり、さらに、このa−C膜中に酸素や窒素をドー
プさせると、このa−C膜の経時安定性が向上する。In addition, if the a-C film is doped with atoms of group 111A or group VA to control the polarity, it becomes possible to control the physical properties depending on the type of powder such as toner that comes into contact with it. Further, when oxygen or nitrogen is doped into this a-C film, the stability over time of this a-C film is improved.
[作用]
このように構成された電界カーテン装置において、互い
に絶縁された複数の電極に交番電圧を印加すると、不平
等交番電界が形成されると共に、上記電極に接するよう
にして設けられた圧電素子が振動し、不平等交番電界に
よる電界カーテンの作用と、圧電素子の振動とによって
粉粒体が搬送される。[Operation] In the electric field curtain device configured as described above, when an alternating voltage is applied to a plurality of electrodes that are insulated from each other, an unequal alternating electric field is formed, and the piezoelectric element provided in contact with the electrodes is vibrates, and the powder material is transported by the action of the electric field curtain due to the unequal alternating electric field and the vibration of the piezoelectric element.
また、この発明の電界カーテン装置においては、表面側
に設けた上記非晶質炭素膜の接触電場が他の物質に比べ
て非常に高いため、トナー等の粉粒体がこれに接触する
と、瞬時に強く接着帯電され、粉粒体の輸°送立ち上が
り速度が飛躍的に速くなる。In addition, in the electric field curtain device of the present invention, since the contact electric field of the amorphous carbon film provided on the surface side is very high compared to other substances, when a powder such as toner comes into contact with it, it is instantaneous. It is strongly adhesively charged, and the transport start-up speed of powder and granules becomes dramatically faster.
また、この非晶質炭素膜にハロゲン原子をドープさせる
と、非晶質炭素膜が撥水性を示し、耐湿性に優れるため
、この非晶質炭素膜で上記圧電素子をカバーすることに
より、高湿度下での圧電素子の劣化や、圧電素子のリー
クによるトナー等の粉粒体の劣化が抑制される。In addition, when this amorphous carbon film is doped with halogen atoms, the amorphous carbon film exhibits water repellency and has excellent moisture resistance, so by covering the piezoelectric element with this amorphous carbon film, high Deterioration of the piezoelectric element under humidity and deterioration of powder particles such as toner due to leakage of the piezoelectric element are suppressed.
さらに、このような非晶質炭素膜に適当な原子をドープ
させて、粉粒体の輸送量や荷電量を制御できるようにな
る。Furthermore, by doping such an amorphous carbon film with appropriate atoms, it becomes possible to control the amount of transport and the amount of charge of the powder particles.
[実施例]
以下、この発明の実施例を添付図面に基づいて具体的に
説明する。[Example] Hereinafter, an example of the present invention will be specifically described based on the accompanying drawings.
ここで、第1図に示す電界カーテン装置(10)におい
ては、絶縁性物質で構成された誘電体層(11)の表面
(lla)に、複数の電極(12)、(12)、・・・
を、その一部が誘電体層(11)の表面(lla)から
露出するようにして設けた。Here, in the electric field curtain device (10) shown in FIG. 1, a plurality of electrodes (12), (12),...・
was provided so that a portion thereof was exposed from the surface (lla) of the dielectric layer (11).
そして、これらの電極(12)、(12)、・・・を順
番に、3本のリード線(13a)、 (13b)、 (
13c)にそれぞれ二つおきに接続し、3本のリード線
(13a)。Then, three lead wires (13a), (13b), (
13c), and three lead wires (13a).
(13b)、 (13c)によって電極(12)、(1
2)、−・・を三種類の電極群に分け、この3本のリー
ド線(13a)。(13b), (13c) by electrodes (12), (1
2), -... are divided into three types of electrode groups, and these three lead wires (13a).
(13b)、 (13c)をY型結線の三相交番電圧電
源(14)にそれぞれ接続させるようにした。(13b) and (13c) are respectively connected to a Y-type three-phase alternating voltage power supply (14).
また、上記のように各電極(12>、(12)、・・・
の−部が露出した誘電体層(11)の表面(lla)に
、ピエゾ圧電素子(15)を、上記各電極(12)、(
12)、・・・と接触するように設け、さらにこのピエ
ゾ圧電素子(15)上に、非晶質炭素膜(16)を形成
するようにしな。In addition, as described above, each electrode (12>, (12),...
A piezoelectric element (15) is placed on the surface (lla) of the dielectric layer (11) where the - part is exposed, and each of the electrodes (12), (
12), . . . and an amorphous carbon film (16) is formed on the piezoelectric element (15).
ここで、このような電界カーテン装置(10)において
、上記三相交番電圧電源(14)からリード線(13a
)、 (13b)、 (13c)を介して、三種類の各
電極群(12)、 (12)、・・・にそれぞれ2/3
πづつ位相の異なる交番電圧を印加すると、進行波交番
不平等電界列が形成されると共に、誘電体層(11)上
に設けられた上記ピエゾ圧電素子(15)が振動するよ
うになる。Here, in such an electric field curtain device (10), a lead wire (13a
), (13b), (13c) to each of the three types of electrode groups (12), (12),...
When alternating voltages having phases different by π are applied, a traveling wave alternating unequal electric field array is formed, and the piezoelectric element (15) provided on the dielectric layer (11) vibrates.
そして、トナー等の粉粒体が、この電界カーテン装置f
(10)の表面に設けられた上記非晶質炭素膜(16
)に接触すると、この非晶質炭素膜(16)の接触電場
が非常に高いため、粉粒体が瞬時に強く接触帯電され、
これがトリガーとなって、粉粒体が上記進行波交番不平
等電界による電界カーテンの作用と、上記圧電素子(1
5)の振動とによって搬送されるようになる。Then, the powder and granular material such as toner is transferred to this electric field curtain device f.
The amorphous carbon film (16) provided on the surface of (10)
), the contact electric field of this amorphous carbon film (16) is very high, so the powder is instantly and strongly charged by contact.
This acts as a trigger, and the powder particles are affected by the electric field curtain effect due to the traveling wave alternating unequal electric field and the piezoelectric element (1
5) It comes to be conveyed by the vibration.
なお、この実施例のものにおいては、上記のように三相
交番電圧電源(14)を用い、進行波不平等電界を形成
するようにしているが、第2図に示すように、各電極(
12>、(12)、・・・を順番に、2本のリード線(
13a)、 (13b)にそれぞれ一つおきに接続して
二種の電極群に分け、この2本のリード線(13a)、
(13b)を、二相交番電圧電源(14a)に接続さ
せるようにしたり、単相電源を用いるようにして、定在
波交番不平等電界列を形成させるようにすることも可能
である。In this embodiment, the three-phase alternating voltage power supply (14) is used as described above to form a traveling wave unequal electric field, but as shown in FIG.
12>, (12), ... in order, connect the two lead wires (
13a) and (13b), respectively, to separate them into two types of electrode groups, and these two lead wires (13a),
(13b) may be connected to a two-phase alternating voltage power source (14a), or a single-phase power source may be used to form a standing wave alternating unequal electric field array.
、次に、上記のような電界カーテン装置を製造し、これ
を電子写真装置における現像装置に用いる場合について
具体的に説明する。Next, a case in which the electric field curtain device as described above is manufactured and used in a developing device in an electrophotographic apparatus will be specifically described.
ここでは、ポリイミド樹脂で形成された厚み0.5mm
の誘電体層(11)の表面(lla)に、第3図に示す
ように、銅で構成された一対のくし形電極(12a)、
(12b)を相対向するように設け、この一対のくし形
電極(12a)、 (12b)を、上記誘電体層(11
)の表面(lla)の一部に露出させるようにした。Here, it is made of polyimide resin with a thickness of 0.5 mm.
As shown in FIG. 3, on the surface (lla) of the dielectric layer (11), a pair of comb-shaped electrodes (12a) made of copper,
(12b) are provided to face each other, and the pair of comb-shaped electrodes (12a) and (12b) are connected to the dielectric layer (11).
) so that a part of the surface (lla) of the surface (lla) is exposed.
ここで、上記くし彫型8i!(12a)、 (12b)
は、その厚みが10μm、線幅が0.9mmで、両くし
形電極(12a)、 (12b)間のピッチが1.5m
mとなるように形成した。Here, the above comb carving type 8i! (12a), (12b)
The thickness is 10 μm, the line width is 0.9 mm, and the pitch between the interdigitated electrodes (12a) and (12b) is 1.5 m.
It was formed so that it became m.
そして、このようにくし形電極(12a)、 (12b
)が形成された誘電体層(11)の表面(lla)に、
第1図に示す実施例のように、膜厚が0.5mmのピエ
ゾ圧電素子(15)を圧着させた後、誘電体層(11)
の表面(lla)と、このピエゾ圧電素子(15)との
隙間に接着剤を挿入し、これらをプレス成型した。In this way, the comb-shaped electrodes (12a), (12b
) is formed on the surface (lla) of the dielectric layer (11),
As in the example shown in FIG.
An adhesive was inserted into the gap between the surface (lla) and this piezoelectric element (15), and these were press-molded.
さらに、このようにピエゾ圧電素子(15)が形成され
た上に、第4図に示すようなプラズマ−CVD装置(2
0)を用い、プラズマ有機重合膜を形成するようにした
。Furthermore, in addition to the piezoelectric element (15) formed in this way, a plasma-CVD apparatus (2) as shown in FIG.
0) was used to form a plasma organic polymer film.
ここで、第4図に示すプラズマ−CVD装置(20)に
おいては、第1〜第6のタンク(201)〜(206>
に、常温において気相状態にある原料及びキャリアガス
を密封させるようにし、これらの各タンク<201)〜
(206)に、それぞれ対応する第1〜第6の調節弁(
207)〜(212)と、第1〜第6の流量制御器(2
13)〜(218)とを接続させている。Here, in the plasma-CVD apparatus (20) shown in FIG. 4, the first to sixth tanks (201) to (206>
In addition, the raw materials and carrier gas which are in a gas phase at room temperature are sealed, and each of these tanks <201)~
(206), the corresponding first to sixth control valves (
207) to (212) and the first to sixth flow rate controllers (207) to (212).
13) to (218) are connected.
また、第1〜第3の容器(219)〜(221)には、
常温において液相または固相状態にある原料を封入させ
るようにしており、これらの容器(219)〜(221
)に封入された各原料を気化させるため、各容器(21
9)〜(221)にそれぞれ対応する第1〜第3の温調
器(222)〜(224)を設けている。さらに、これ
ら各容器(219)〜(221)には、それぞれ対応す
る第7〜第9の調節弁(225)〜(227)と、第7
〜第9の流量制御器(22g)〜(230)とを接続さ
せている。In addition, the first to third containers (219) to (221) include
These containers (219) to (221) contain raw materials that are in a liquid or solid state at room temperature.
) to vaporize each raw material sealed in each container (21
9) to (221), respectively, are provided with first to third temperature regulators (222) to (224). Further, each of these containers (219) to (221) has a corresponding seventh to ninth control valves (225) to (227), and a seventh to seventh control valve (225) to (227), respectively.
~9th flow rate controller (22g) ~ (230) are connected.
そして、これらのガスを、混合器(231)内において
混合した後、主管(232)を介して反応室(233)
に送り込むようになっている。なお、途中の配管部分に
おいては、常温において液相または同相状態にあった原
料化合物を気化させたガスが凝結しないように、配管部
分の適当な位置に配管加熱器(234)を配置し、加熱
できるようにしている。After mixing these gases in the mixer (231), they are passed through the main pipe (232) to the reaction chamber (233).
It is designed to be sent to In addition, in the intermediate piping section, a piping heater (234) is placed at an appropriate position in the piping section so that the gas obtained by vaporizing the raw material compound that is in a liquid phase or the same phase state at room temperature does not condense. I'm trying to make it possible.
また、反応室(233>においても、常温において液相
または固相状態にあった原料化合物を気化させたガスが
凝結しないように、その周囲に反応室加熱器(251)
を配置し、加熱できるようにしている。In addition, in the reaction chamber (233), a reaction chamber heater (251) is installed around the reaction chamber (233) so that the gas obtained by vaporizing the raw material compound that is in a liquid or solid phase at room temperature does not condense.
are placed so that they can be heated.
そして、この反応室(233)内においては、接地電極
(235)と電力印加電極(236)とを対向するよう
にして設置すると共に、これらの両電極(235) 、
(236)にそれぞれ電極加熱器(237)を設け、
両電極(’235 )、 (236)を加熱できるよう
にしている。In this reaction chamber (233), a ground electrode (235) and a power application electrode (236) are installed to face each other, and both of these electrodes (235),
(236) are each provided with an electrode heater (237),
Both electrodes ('235) and (236) can be heated.
ここで、電力印加電極(236)には、接続選択スイッ
チ(244)を介して、高周波電力用整合器(23g)
が設けられた高周波電源(239)と、低周波電力用整
合器(240)が設けられた低周波電源(241>と、
ローパスフィルタ(242)が設けられた直流電源(2
43)とを接続させ、上記接続選択スイッチ(244)
により、周波数の異なる電力を適宜選択して印加できる
ようにしている。Here, a high frequency power matching device (23g) is connected to the power application electrode (236) via a connection selection switch (244).
a high frequency power source (239) provided with a high frequency power source (239), a low frequency power source (241> provided with a matching box for low frequency power (240),
DC power supply (2) equipped with a low-pass filter (242)
43), and press the connection selection switch (244).
This makes it possible to appropriately select and apply power having different frequencies.
また、上記反応室(233>内の圧力を調整するために
圧力制御弁(245>を設けており、反応室(233)
内の圧力を減圧する場合には、排気系選択弁(246)
を介して、拡散ポンプ(247> 、油回転ポンプ(2
48)により、あるいは冷却除外装置(249) 、メ
カニカルブースターポンプ(250) 。In addition, a pressure control valve (245> is provided to adjust the pressure inside the reaction chamber (233>), and the reaction chamber (233>
When reducing the internal pressure, use the exhaust system selection valve (246)
through the diffusion pump (247>, oil rotary pump (247)
48) or by a cooling exclusion device (249), a mechanical booster pump (250).
油回転ポンプ(248)によって行うようにしている。This is done using an oil rotary pump (248).
なお、排ガスについては、さらに適当な除外装置(25
3>を介して安全無害化した後に、大気中に排気するよ
うにしている。Furthermore, regarding exhaust gas, an appropriate exclusion device (25
After making it safe and harmless through 3>, it is exhausted into the atmosphere.
さらに、これら排気系配管においても、常温において液
相または固相状態にあった原料化合物を気化させたガス
が、途中で凝結しないようにするため、配管加熱器(2
34’)を適当な位置に配置し、加熱できるようにして
いる。Furthermore, in these exhaust system piping, pipe heaters (2
34') is placed at an appropriate position so that it can be heated.
実施例1
この実施例では、上述したプラズマ−CVD装置(20
)を用いて、前記のように誘電体層(11)の表面(l
la)に形成されたピエゾ圧電素子(15)上に、プラ
ズマ有機重合膜を形成するにあたって、誘電体層(11
)の表面(lla)にピエゾ圧電素子(15)を形成し
た基板(252’)を、上記反応室(233)内に設け
られた接地室! (235)上にセットした。Example 1 In this example, the plasma-CVD apparatus (20
) of the dielectric layer (11) as described above.
In forming the plasma organic polymer film on the piezoelectric element (15) formed in the dielectric layer (11
) A substrate (252') having a piezoelectric element (15) formed on its surface (lla) is placed in a grounded chamber provided in the reaction chamber (233). (235) set on top.
その後、この反応室(233>内を上記圧力制御弁(2
45)を介して減圧させ、反応室(233’)内部を1
O−6Torr程度の高真空状態にした後、上記の第1
.第2及び第3の各調節弁(207) 。After that, the inside of this reaction chamber (233) is
45) to reduce the pressure inside the reaction chamber (233') to 1
After creating a high vacuum state of about O-6 Torr, the first
.. Second and third control valves (207).
(20g) 、 (209)を開放し、上記の第1のタ
ンク(201)から水素ガスを、第2のタンク(202
)から1.3−ブタジェンガスを、第3のタンク(20
3’)から四弗化エチレンガスを、それぞれ出力圧1.
0kg/crdにして、第1.第2及び第3の各流量制
御器(213)、 (214)、 (215)内に流入
させた。(20g) and (209) are opened and hydrogen gas is transferred from the first tank (201) to the second tank (202).
) from the third tank (20
3') to supply tetrafluoroethylene gas at an output pressure of 1.
0kg/crd, 1st. It was made to flow into each of the second and third flow rate controllers (213), (214), and (215).
そして、各流量制御器(213)、(214)、(21
5)の目盛りを調整して、水素ガスの流量が40sec
m、1.3−ブタジェンガスの流量が30secm、四
弗化エチレンガスの流量が60secmとなるように設
定し、これらのガスを混合器(231)に導いて混合し
た後、上記主管(23,2)を介して反応室(233)
内に流入させるようにした。And each flow controller (213), (214), (21
Adjust the scale in 5) until the hydrogen gas flow rate is 40 seconds.
The flow rate of 1,3-butadiene gas is set to 30 seconds, and the flow rate of tetrafluoroethylene gas is set to 60 seconds, and after these gases are introduced into the mixer (231) and mixed, the main pipes (23, 2 ) through the reaction chamber (233)
I made it flow inside.
このようにして流入される各ガスの流入が安定した後、
上記反応室(233)内の圧力が0,9Torrとなる
ように圧力調節弁(245)を調節した。After the inflow of each gas is stabilized in this way,
The pressure regulating valve (245) was adjusted so that the pressure inside the reaction chamber (233) was 0.9 Torr.
一方、前記のように接地電極(235>上にセットした
基板(252)を、予め100℃に加熱しておき、ガス
流量及び圧力が安定した状態で、予め接続選択スイッチ
(244)によって電力印加電極(236)に接続して
おいた高周波電源(239)を投入し、この高周波電源
(239)から、周波数100KHzで120Wの電力
を電力印加電極(236)に印加し、約2分間プラズマ
重合反応を行い、上記基板(252)のピエゾ圧電素子
(15)上に、厚さ0,32μmのフッ素が含有された
プラズマ有機重合膜を形成した。On the other hand, the substrate (252) set on the ground electrode (235) as described above is heated to 100°C in advance, and when the gas flow rate and pressure are stable, power is applied in advance by the connection selection switch (244). The high-frequency power source (239) connected to the electrode (236) is turned on, and 120 W of power at a frequency of 100 KHz is applied from the high-frequency power source (239) to the power application electrode (236), and the plasma polymerization reaction is carried out for about 2 minutes. A fluorine-containing plasma organic polymer film having a thickness of 0.32 μm was formed on the piezoelectric element (15) of the substrate (252).
そして、このようにフッ素が含有されたプラズマ有機重
合膜を形成した後は、上記高周波電源(239)からの
電力印加を停止すると共に、上記圧力調節弁(245’
)を開き、反応室(233)内のガスを充分に排気した
後、表面にフッ素が含有されたプラズマ有機重合膜が形
成された電界カーテン装置を取り出した。After forming the plasma organic polymer film containing fluorine in this manner, the application of power from the high frequency power source (239) is stopped, and the pressure regulating valve (245'
) was opened and the gas in the reaction chamber (233) was sufficiently exhausted, and then the electric field curtain device on which a fluorine-containing plasma organic polymer film was formed was taken out.
なお、このようにして得られたフッ素含有のプラズマ有
機重合膜につきCHN定量分析を行ったところ、含有さ
れる水素原子の量は、炭素原子と水素原子の総量に対し
て約34原子%、さらにオージェ分析から、含有される
ハロゲン原子、即ち、フッ素原子の量は全構成原子に対
し7.1原子%であった。In addition, when CHN quantitative analysis was performed on the fluorine-containing plasma organic polymer film obtained in this way, the amount of hydrogen atoms contained was approximately 34 at% based on the total amount of carbon atoms and hydrogen atoms. Auger analysis revealed that the amount of halogen atoms, ie, fluorine atoms, contained was 7.1 at % based on the total constituent atoms.
実施例2
この実施例においては、キャリアガスとして水素ガスを
用いる一方、原料ガスとしてプロピレンガスを用い、水
素ガスの流量を101005e、プロピレンガスの流量
を45secmにすると共に、上記高周波電源(239
)から、周波数500KHzで100Wの電力を電力印
加電極(236’)に約2分間印加するようにし、それ
以外については、上記実施例1の場合と同様にして、0
.9μmのプラズマ有機重合膜を形成した。Example 2 In this example, hydrogen gas is used as a carrier gas, propylene gas is used as a raw material gas, the flow rate of hydrogen gas is set to 101005e, the flow rate of propylene gas is set to 45 seconds, and the high frequency power source (239
), a power of 100 W at a frequency of 500 KHz was applied to the power application electrode (236') for about 2 minutes, and other than that, in the same manner as in Example 1 above, 0.
.. A plasma organic polymer film of 9 μm was formed.
なお、このようにして得られたプラズマ有機重合膜中の
水素原子の量は、約47原子%であった。The amount of hydrogen atoms in the plasma organic polymerized film thus obtained was about 47 atomic %.
次いで、上記実施例1及び実施例2で形成された電界カ
ーテン装置(10)を、第5図に示すように、電子写真
装置(30)における現像装置り31)内において、ト
ナーを収容するトナー収容部C311)の底面部分と、
現像スリーブ(312)の上方部分とに設けるようにし
、残りの電界カーテン装置部分については、ピエゾ圧電
素子(15)やプラズマ有機重合膜が設けられていない
従来の電界カーテン装置(10’ )を用いるようにし
た。Next, as shown in FIG. 5, the electric field curtain device (10) formed in Example 1 and Example 2 is placed in a developing device (31) in an electrophotographic device (30). A bottom part of the housing part C311),
A conventional electric field curtain device (10') without a piezoelectric element (15) or a plasma organic polymer film is used for the remaining electric field curtain device. I did it like that.
ここで、このような電子写真装置(30)においては、
現像装置(31)内に設けられた電界カーテン装置(1
0)、 (10’ )における両くし形電極(12a)
。Here, in such an electrophotographic apparatus (30),
An electric field curtain device (1) provided in the developing device (31)
0), (10') both comb-shaped electrodes (12a)
.
(12b)に、それぞれ位相がずれた二相の交流電圧を
印加し、トナー収容部(311)に収容されたトナーを
帯電させて現像スリーブ(312)上に供給させるよう
になっている。(12b) are applied with two-phase AC voltages whose phases are shifted from each other to charge the toner contained in the toner storage portion (311) and supply it onto the developing sleeve (312).
一方、この現像装置(31)からトナーが供給される感
光体(32)においては、その表面を帯電器(33)に
よって帯電させた後、この帯電された感光体(32)表
面の適当な箇所に、光学系(34)より光を照射し、感
光体(32)表面に静電潜像を形成するようになってい
る。On the other hand, the surface of the photoreceptor (32) to which toner is supplied from the developing device (31) is charged by a charger (33), and then an appropriate location on the charged surface of the photoreceptor (32) is charged. Then, light is irradiated from an optical system (34) to form an electrostatic latent image on the surface of the photoreceptor (32).
そして、上記現像装置(31)において、トナーが供給
された現像スリーブ(312)に現像バイアス電圧(3
13)をかけ、この現像スリーブ(312>上における
帯電したトナーを、感光体(32)表面の静電潜像箇所
に供給し、トナー像を形成するようになっている。In the developing device (31), a developing bias voltage (3) is applied to the developing sleeve (312) supplied with toner.
13), and the charged toner on this developing sleeve (312) is supplied to the electrostatic latent image location on the surface of the photoreceptor (32) to form a toner image.
その後は、上記のように感光体(32)表面に形成され
たトナー像を、転写用帯電器(35)及び分離用除電器
(36)を介して記録紙(37)上に転写する一方、感
光体(32)表面に残ったトナーをクリナーユニット(
38)によって除去した後、イレーサーランプ(39)
によって感光体(32)表面を除電するようになってい
る。Thereafter, the toner image formed on the surface of the photoreceptor (32) as described above is transferred onto the recording paper (37) via the transfer charger (35) and the separation charge remover (36), while Clean the toner remaining on the surface of the photoreceptor (32) with the cleaner unit (
38), then the eraser lamp (39)
The surface of the photoreceptor (32) is charged with electricity.
次に、上記のような現像装置(31)内に設けられた電
界カーテン装置(10)、(10’)において、その両
くし形電極(12a)、 (12b)に、それぞれ電圧
のビークルビーク値v P−Pが600V、周波数が8
00Hzで、位相がπ/2ずれた二相の交流電圧を印加
し、これにより、上記トナー収容部(311)に収容さ
れたトナーを帯電させると共に、トナーを移送させて現
像スリーブ(312)上に供給し、この現像スリーブ(
312)に供給されたトナーの荷電量を測定するように
した。Next, in the electric field curtain devices (10) and (10') provided in the developing device (31) as described above, the vehicle peak value of the voltage is applied to both the comb-shaped electrodes (12a) and (12b), respectively. v P-P is 600V, frequency is 8
A two-phase alternating current voltage with a phase shift of π/2 is applied at 00 Hz, thereby charging the toner accommodated in the toner storage section (311) and transporting the toner onto the developing sleeve (312). This developing sleeve (
312) to measure the amount of charge on the supplied toner.
ここで、上記のようにピエゾ圧電素子(15)の上に、
プラズマ有機重合膜が形成されてなるこの実施例に係る
電界カーテン装置(10)を、トナーを収容するトナー
収容部(311)の底面部分と現像スリーブ(312)
の上方部分とに設けた現像袋!(31)と比較するため
、比較例として、ピエゾ圧電素子(15)やプラズマ有
機重合膜を形成することなく、単に誘電層に複数の電極
を設けた従来の電界カーテン装! (10’ ”)のみ
を設けた現像装置を使用するようにした。Here, as mentioned above, on the piezoelectric element (15),
The electric field curtain device (10) according to this embodiment in which a plasma organic polymer film is formed is attached to the bottom part of the toner storage section (311) that stores toner and the developing sleeve (312).
A developing bag installed in the upper part of the! In order to compare with (31), as a comparative example, we used a conventional electric field curtain device in which a plurality of electrodes were simply provided on the dielectric layer without forming a piezoelectric element (15) or a plasma organic polymer film! (10''') is used.
そして、これらの現像装置を用いて、30秒後、1分後
及び10分後において、それぞれの現像スリーブ上に供
給されたトナーの荷電量を測定した。この測定結果は、
下記の第1表に示す通りであった。Using these developing devices, the amount of charge of the toner supplied onto each developing sleeve was measured after 30 seconds, 1 minute, and 10 minutes. This measurement result is
The results were as shown in Table 1 below.
この結果から明らかなように、この実施例に係る電界カ
ーテン装W(10)を一部に設けた現像装置は、従来の
電界カーテン装置(10’)を設けただけの現像装置に
比べ、現像スリーブ上に供給されたトナーの荷電量が高
くなっていると共に、トナーの荷電立ち上がり速度も著
しく遠くな′っており、トナーの接触帯電性が改良され
、トナーの搬送性が著しく向上した。As is clear from this result, the developing device partially provided with the electric field curtain device W (10) according to this example has a higher development rate than the developing device only provided with the conventional electric field curtain device (10'). The amount of charge of the toner supplied onto the sleeve has increased, and the charging rise speed of the toner has also been significantly slowed, and the contact charging properties of the toner have been improved, and the toner transportability has been significantly improved.
[発明の効果]
以上詳述したように、この発明に係る電界カーテン装置
においては、互いに絶縁された複数の電極に接触するよ
うにして圧電素子を設けると共に、さらに表面側に接触
電場の高い非晶質炭素膜を設けるようにしたため、トナ
ー等の粉粒体が、この非晶質炭素膜に接触すると、瞬時
に強く接触帯電され、粉粒体の輸送立ち上がり速度が飛
躍的に速くなり、電子写真装置における現像装置等に利
用した場合には、その応答性が著しく向上し、高速化で
きるようになった。[Effects of the Invention] As detailed above, in the electric field curtain device according to the present invention, piezoelectric elements are provided in contact with a plurality of electrodes that are insulated from each other, and a piezoelectric element with a high contact electric field is provided on the surface side. Because a crystalline carbon film is provided, when particles such as toner come into contact with this amorphous carbon film, they are instantly and strongly charged by contact, and the transport rise speed of the particles dramatically increases, resulting in the transfer of electrons. When used in developing devices and the like in photographic equipment, the responsiveness has been significantly improved and speeds have been increased.
また、この電界カーテン装置において、その表面側に設
けた非晶質炭素膜にハロゲン原子をドープさせると、こ
の非晶質炭素膜が撥水性を示し、耐湿性が向上するため
、高湿度下で使用した場合においても、この非晶質炭素
膜が圧電素子の劣化を抑制すると共に、圧電素子がリー
クを起こしてトナー等の粉粒体を劣化するということも
防止できるようになった。In addition, in this electric field curtain device, when the amorphous carbon film provided on the surface side is doped with halogen atoms, this amorphous carbon film exhibits water repellency and improves moisture resistance. Even when used, this amorphous carbon film suppresses deterioration of the piezoelectric element, and also prevents the piezoelectric element from leaking and deteriorating powder particles such as toner.
さらに、このような非晶質炭素膜に適当な原子をドープ
させることによって、粉粒体の輸送量や荷電量を簡単に
制御でき、様々な種類の現像装置等に対応させて利用で
きるようになった。Furthermore, by doping such an amorphous carbon film with appropriate atoms, it is possible to easily control the amount of transport and charge of the powder, making it compatible with various types of developing devices. became.
第1図はこの発明の一実施例に係る電界カーテン装置の
断面図、第2図は同実施例の電界カーテン装置において
定在波交番不平等電界列を形成する場合の例を示す図、
第3図はこの発明に係る電界カーテン装置に使用した電
極の例を示す平面図、第4図はこの発明に係る電界カー
テン装置を製造する場合に使用したプラズマ−CVD装
置の例を示す概略図、第5図はこの発明に係る電界カー
テン装置を電子写真装置の現像装置に用いた例を示す概
略断面図である。
(10)・・・電界カーテン装置、(12)・・・電極
、(15)・・・圧電素子、(16)・・・非晶質炭素
膜。
2bFIG. 1 is a sectional view of an electric field curtain device according to an embodiment of the present invention, and FIG. 2 is a diagram showing an example of forming a standing wave alternating unequal electric field array in the electric field curtain device of the same embodiment.
FIG. 3 is a plan view showing an example of an electrode used in the electric field curtain device according to the present invention, and FIG. 4 is a schematic diagram showing an example of a plasma-CVD device used in manufacturing the electric field curtain device according to the present invention. , FIG. 5 is a schematic sectional view showing an example in which the electric field curtain device according to the present invention is used in a developing device of an electrophotographic device. (10)...Electric field curtain device, (12)...Electrode, (15)...Piezoelectric element, (16)...Amorphous carbon film. 2b
Claims (1)
、不平等交番電界を形成する電界カーテン装置において
、上記電極に接するようにして圧電素子を設けると共に
、表面側に非晶質炭素膜を設けたことを特徴とする電界
カーテン装置。1. In an electric field curtain device that applies an alternating voltage to a plurality of mutually insulated electrodes to form an unequal alternating electric field, a piezoelectric element is provided in contact with the electrodes, and an amorphous carbon film is provided on the surface side. An electric field curtain device characterized by being provided with.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63316014A JPH02160266A (en) | 1988-12-14 | 1988-12-14 | Electric field curtain device |
US07/446,799 US5027157A (en) | 1988-12-02 | 1989-12-01 | Developing device provided with electrodes for inducing a traveling wave on the developing material |
DE3940077A DE3940077A1 (en) | 1988-12-02 | 1989-12-04 | DEVELOPER DEVICE |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63316014A JPH02160266A (en) | 1988-12-14 | 1988-12-14 | Electric field curtain device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02160266A true JPH02160266A (en) | 1990-06-20 |
Family
ID=18072291
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63316014A Pending JPH02160266A (en) | 1988-12-02 | 1988-12-14 | Electric field curtain device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02160266A (en) |
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