JPH0214788B2 - - Google Patents

Info

Publication number
JPH0214788B2
JPH0214788B2 JP56041407A JP4140781A JPH0214788B2 JP H0214788 B2 JPH0214788 B2 JP H0214788B2 JP 56041407 A JP56041407 A JP 56041407A JP 4140781 A JP4140781 A JP 4140781A JP H0214788 B2 JPH0214788 B2 JP H0214788B2
Authority
JP
Japan
Prior art keywords
oxide film
region
layer
film
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56041407A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57153462A (en
Inventor
Shinichi Sato
Hideo Kotani
Masahiko Denda
Yoshikazu Oohayashi
Kazuo Mizuguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP56041407A priority Critical patent/JPS57153462A/ja
Publication of JPS57153462A publication Critical patent/JPS57153462A/ja
Publication of JPH0214788B2 publication Critical patent/JPH0214788B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors

Landscapes

  • Weting (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP56041407A 1981-03-18 1981-03-18 Manufacture of semiconductor integrated circuit device Granted JPS57153462A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56041407A JPS57153462A (en) 1981-03-18 1981-03-18 Manufacture of semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56041407A JPS57153462A (en) 1981-03-18 1981-03-18 Manufacture of semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS57153462A JPS57153462A (en) 1982-09-22
JPH0214788B2 true JPH0214788B2 (OSRAM) 1990-04-10

Family

ID=12607501

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56041407A Granted JPS57153462A (en) 1981-03-18 1981-03-18 Manufacture of semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS57153462A (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03116588U (OSRAM) * 1990-03-09 1991-12-03

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6416645U (OSRAM) * 1987-07-17 1989-01-27

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03116588U (OSRAM) * 1990-03-09 1991-12-03

Also Published As

Publication number Publication date
JPS57153462A (en) 1982-09-22

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