JPH02119185A - Ｅｐｒｏｍセル - Google Patents

Ｅｐｒｏｍセル

Info

Publication number
JPH02119185A
JPH02119185A JP1166474A JP16647489A JPH02119185A JP H02119185 A JPH02119185 A JP H02119185A JP 1166474 A JP1166474 A JP 1166474A JP 16647489 A JP16647489 A JP 16647489A JP H02119185 A JPH02119185 A JP H02119185A
Authority
JP
Japan
Prior art keywords
oxide
gate
layer
cell
polycrystalline layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1166474A
Other languages
English (en)
Japanese (ja)
Inventor
Sangsoo Lee
李　相洙
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Goldstar Semiconductor Co Ltd
Original Assignee
Goldstar Semiconductor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Goldstar Semiconductor Co Ltd filed Critical Goldstar Semiconductor Co Ltd
Publication of JPH02119185A publication Critical patent/JPH02119185A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7886—Hot carrier produced by avalanche breakdown of a PN junction, e.g. FAMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Element Separation (AREA)
JP1166474A 1988-06-30 1989-06-28 Ｅｐｒｏｍセル Pending JPH02119185A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR88-7986 1988-06-30
KR1019880007986A KR970000652B1 (ko) 1988-06-30 1988-06-30 트랜치 분리를 이용한 eprom 셀 및 이의 제조방법

Publications (1)

Publication Number Publication Date
JPH02119185A true JPH02119185A (ja) 1990-05-07

Family

ID=19275680

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1166474A Pending JPH02119185A (ja) 1988-06-30 1989-06-28 Ｅｐｒｏｍセル

Country Status (5)

Country Link
JP (1) JPH02119185A (de)
KR (1) KR970000652B1 (de)
DE (1) DE3920451C2 (de)
FR (1) FR2633777B1 (de)
NL (1) NL194183C (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7002830B2 (en) 1990-07-12 2006-02-21 Renesas Technology Corp. Semiconductor integrated circuit device

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE68916335T2 (de) * 1988-08-08 1995-01-05 Nat Semiconductor Corp Elektrisch löschbare und programmierbare Nurlese-Bipolar-Feldeffekt-Speicherzelle und Verfahren zu deren Herstellung.
DE4200620C2 (de) * 1992-01-13 1994-10-06 Eurosil Electronic Gmbh Floating-Gate-EEPROM-Zelle mit Sandwichkoppelkapaziztät
KR100790044B1 (ko) * 2006-03-09 2008-01-02 엘지전자 주식회사 전기 호브의 냉각장치
KR100701179B1 (ko) * 2006-03-24 2007-03-28 주식회사 대우일렉트로닉스 전자레인지의 컨벡션모터 냉각장치
KR101684116B1 (ko) 2015-05-26 2016-12-08 현대자동차주식회사 차량용 공조 제어 방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60260147A (ja) * 1984-06-06 1985-12-23 Fujitsu Ltd 半導体装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1985001836A1 (en) * 1983-10-11 1985-04-25 American Telephone & Telegraph Company Semiconductor integrated circuits containing complementary metal oxide semiconductor devices
US4698900A (en) * 1986-03-27 1987-10-13 Texas Instruments Incorporated Method of making a non-volatile memory having dielectric filled trenches

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60260147A (ja) * 1984-06-06 1985-12-23 Fujitsu Ltd 半導体装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7002830B2 (en) 1990-07-12 2006-02-21 Renesas Technology Corp. Semiconductor integrated circuit device
US7212425B2 (en) 1990-07-12 2007-05-01 Renesas Technology Corp. Semiconductor integrated circuit device
US7336535B2 (en) 1990-07-12 2008-02-26 Renesas Technology Corp. Semiconductor integrated circuit device

Also Published As

Publication number Publication date
DE3920451A1 (de) 1990-01-04
NL8901545A (nl) 1990-01-16
KR970000652B1 (ko) 1997-01-16
KR900001023A (ko) 1990-01-31
DE3920451C2 (de) 1993-12-02
FR2633777A1 (fr) 1990-01-05
NL194183B (nl) 2001-04-02
NL194183C (nl) 2001-08-03
FR2633777B1 (fr) 1993-12-31

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