NL194183C - EPROM-cel met gleuf-isolatie, en werkwijze voor het vervaardigen hiervan. - Google Patents
EPROM-cel met gleuf-isolatie, en werkwijze voor het vervaardigen hiervan. Download PDFInfo
- Publication number
- NL194183C NL194183C NL8901545A NL8901545A NL194183C NL 194183 C NL194183 C NL 194183C NL 8901545 A NL8901545 A NL 8901545A NL 8901545 A NL8901545 A NL 8901545A NL 194183 C NL194183 C NL 194183C
- Authority
- NL
- Netherlands
- Prior art keywords
- layer
- cell
- poly
- oxide
- gate
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000000034 method Methods 0.000 title claims description 3
- 238000009413 insulation Methods 0.000 title description 4
- 239000012212 insulator Substances 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 150000004767 nitrides Chemical class 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 5
- 239000002784 hot electron Substances 0.000 claims description 4
- 238000002347 injection Methods 0.000 claims description 4
- 239000007924 injection Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 2
- 230000000873 masking effect Effects 0.000 claims 3
- 239000005380 borophosphosilicate glass Substances 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 claims 1
- 238000002161 passivation Methods 0.000 claims 1
- 230000006870 function Effects 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
- H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
- H01L29/7886—Hot carrier produced by avalanche breakdown of a PN junction, e.g. FAMOS
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Element Separation (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019880007986A KR970000652B1 (ko) | 1988-06-30 | 1988-06-30 | 트랜치 분리를 이용한 eprom 셀 및 이의 제조방법 |
| KR880007986 | 1988-06-30 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| NL8901545A NL8901545A (nl) | 1990-01-16 |
| NL194183B NL194183B (nl) | 2001-04-02 |
| NL194183C true NL194183C (nl) | 2001-08-03 |
Family
ID=19275680
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8901545A NL194183C (nl) | 1988-06-30 | 1989-06-20 | EPROM-cel met gleuf-isolatie, en werkwijze voor het vervaardigen hiervan. |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPH02119185A (de) |
| KR (1) | KR970000652B1 (de) |
| DE (1) | DE3920451C2 (de) |
| FR (1) | FR2633777B1 (de) |
| NL (1) | NL194183C (de) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE68916335T2 (de) * | 1988-08-08 | 1995-01-05 | Nat Semiconductor Corp | Elektrisch löschbare und programmierbare Nurlese-Bipolar-Feldeffekt-Speicherzelle und Verfahren zu deren Herstellung. |
| JP3083547B2 (ja) | 1990-07-12 | 2000-09-04 | 株式会社日立製作所 | 半導体集積回路装置 |
| DE4200620C2 (de) * | 1992-01-13 | 1994-10-06 | Eurosil Electronic Gmbh | Floating-Gate-EEPROM-Zelle mit Sandwichkoppelkapaziztät |
| KR100790044B1 (ko) * | 2006-03-09 | 2008-01-02 | 엘지전자 주식회사 | 전기 호브의 냉각장치 |
| KR100701179B1 (ko) * | 2006-03-24 | 2007-03-28 | 주식회사 대우일렉트로닉스 | 전자레인지의 컨벡션모터 냉각장치 |
| KR101684116B1 (ko) | 2015-05-26 | 2016-12-08 | 현대자동차주식회사 | 차량용 공조 제어 방법 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1985001836A1 (en) * | 1983-10-11 | 1985-04-25 | American Telephone & Telegraph Company | Semiconductor integrated circuits containing complementary metal oxide semiconductor devices |
| JPS60260147A (ja) * | 1984-06-06 | 1985-12-23 | Fujitsu Ltd | 半導体装置 |
| US4698900A (en) * | 1986-03-27 | 1987-10-13 | Texas Instruments Incorporated | Method of making a non-volatile memory having dielectric filled trenches |
-
1988
- 1988-06-30 KR KR1019880007986A patent/KR970000652B1/ko not_active IP Right Cessation
-
1989
- 1989-06-20 NL NL8901545A patent/NL194183C/nl not_active IP Right Cessation
- 1989-06-22 DE DE3920451A patent/DE3920451C2/de not_active Expired - Lifetime
- 1989-06-26 FR FR8908469A patent/FR2633777B1/fr not_active Expired - Lifetime
- 1989-06-28 JP JP1166474A patent/JPH02119185A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE3920451A1 (de) | 1990-01-04 |
| NL8901545A (nl) | 1990-01-16 |
| KR970000652B1 (ko) | 1997-01-16 |
| KR900001023A (ko) | 1990-01-31 |
| DE3920451C2 (de) | 1993-12-02 |
| FR2633777A1 (fr) | 1990-01-05 |
| NL194183B (nl) | 2001-04-02 |
| JPH02119185A (ja) | 1990-05-07 |
| FR2633777B1 (fr) | 1993-12-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A1A | A request for search or an international-type search has been filed | ||
| BB | A search report has been drawn up | ||
| CNR | Transfer of rights (patent application after its laying open for public inspection) |
Free format text: GOLDSTAR ELECTRON LTD. |
|
| BC | A request for examination has been filed | ||
| V4 | Discontinued because of reaching the maximum lifetime of a patent |
Effective date: 20090620 |