FR2633777B1 - Cellule eprom utilisant un isolement de tranchee et son procede de fabrication - Google Patents

Cellule eprom utilisant un isolement de tranchee et son procede de fabrication

Info

Publication number
FR2633777B1
FR2633777B1 FR8908469A FR8908469A FR2633777B1 FR 2633777 B1 FR2633777 B1 FR 2633777B1 FR 8908469 A FR8908469 A FR 8908469A FR 8908469 A FR8908469 A FR 8908469A FR 2633777 B1 FR2633777 B1 FR 2633777B1
Authority
FR
France
Prior art keywords
manufacturing
trench isolation
eprom cell
eprom
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR8908469A
Other languages
English (en)
French (fr)
Other versions
FR2633777A1 (fr
Inventor
Lee Sangsoo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Goldstar Semiconductor Co Ltd
Original Assignee
Goldstar Semiconductor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Goldstar Semiconductor Co Ltd filed Critical Goldstar Semiconductor Co Ltd
Publication of FR2633777A1 publication Critical patent/FR2633777A1/fr
Application granted granted Critical
Publication of FR2633777B1 publication Critical patent/FR2633777B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7886—Hot carrier produced by avalanche breakdown of a PN junction, e.g. FAMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Element Separation (AREA)
FR8908469A 1988-06-30 1989-06-26 Cellule eprom utilisant un isolement de tranchee et son procede de fabrication Expired - Lifetime FR2633777B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019880007986A KR970000652B1 (ko) 1988-06-30 1988-06-30 트랜치 분리를 이용한 eprom 셀 및 이의 제조방법

Publications (2)

Publication Number Publication Date
FR2633777A1 FR2633777A1 (fr) 1990-01-05
FR2633777B1 true FR2633777B1 (fr) 1993-12-31

Family

ID=19275680

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8908469A Expired - Lifetime FR2633777B1 (fr) 1988-06-30 1989-06-26 Cellule eprom utilisant un isolement de tranchee et son procede de fabrication

Country Status (5)

Country Link
JP (1) JPH02119185A (de)
KR (1) KR970000652B1 (de)
DE (1) DE3920451C2 (de)
FR (1) FR2633777B1 (de)
NL (1) NL194183C (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE68916335T2 (de) * 1988-08-08 1995-01-05 Nat Semiconductor Corp Elektrisch löschbare und programmierbare Nurlese-Bipolar-Feldeffekt-Speicherzelle und Verfahren zu deren Herstellung.
JP3083547B2 (ja) 1990-07-12 2000-09-04 株式会社日立製作所 半導体集積回路装置
DE4200620C2 (de) * 1992-01-13 1994-10-06 Eurosil Electronic Gmbh Floating-Gate-EEPROM-Zelle mit Sandwichkoppelkapaziztät
KR100790044B1 (ko) * 2006-03-09 2008-01-02 엘지전자 주식회사 전기 호브의 냉각장치
KR100701179B1 (ko) * 2006-03-24 2007-03-28 주식회사 대우일렉트로닉스 전자레인지의 컨벡션모터 냉각장치
KR101684116B1 (ko) 2015-05-26 2016-12-08 현대자동차주식회사 차량용 공조 제어 방법

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1985001836A1 (en) * 1983-10-11 1985-04-25 American Telephone & Telegraph Company Semiconductor integrated circuits containing complementary metal oxide semiconductor devices
JPS60260147A (ja) * 1984-06-06 1985-12-23 Fujitsu Ltd 半導体装置
US4698900A (en) * 1986-03-27 1987-10-13 Texas Instruments Incorporated Method of making a non-volatile memory having dielectric filled trenches

Also Published As

Publication number Publication date
DE3920451A1 (de) 1990-01-04
NL8901545A (nl) 1990-01-16
KR970000652B1 (ko) 1997-01-16
KR900001023A (ko) 1990-01-31
DE3920451C2 (de) 1993-12-02
FR2633777A1 (fr) 1990-01-05
NL194183B (nl) 2001-04-02
JPH02119185A (ja) 1990-05-07
NL194183C (nl) 2001-08-03

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Legal Events

Date Code Title Description
TP Transmission of property