JPH0210924B2 - - Google Patents
Info
- Publication number
- JPH0210924B2 JPH0210924B2 JP56090599A JP9059981A JPH0210924B2 JP H0210924 B2 JPH0210924 B2 JP H0210924B2 JP 56090599 A JP56090599 A JP 56090599A JP 9059981 A JP9059981 A JP 9059981A JP H0210924 B2 JPH0210924 B2 JP H0210924B2
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- thin film
- metal
- metal electrode
- mim
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052751 metal Inorganic materials 0.000 claims description 40
- 239000002184 metal Substances 0.000 claims description 40
- 239000004973 liquid crystal related substance Substances 0.000 claims description 32
- 239000010409 thin film Substances 0.000 claims description 20
- 239000010408 film Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 10
- 238000000059 patterning Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 12
- 229910052715 tantalum Inorganic materials 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000012212 insulator Substances 0.000 description 6
- 229910003437 indium oxide Inorganic materials 0.000 description 5
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 4
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000012935 Averaging Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000005529 poole-frenkel effect Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 241001505400 Strix Species 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- -1 chalcogenide glass Chemical compound 0.000 description 1
- 239000005387 chalcogenide glass Substances 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229940013840 strix Drugs 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1365—Active matrix addressed cells in which the switching element is a two-electrode device
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Liquid Crystal (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56090599A JPS57205712A (en) | 1981-06-12 | 1981-06-12 | Production of liquid crystal display body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56090599A JPS57205712A (en) | 1981-06-12 | 1981-06-12 | Production of liquid crystal display body |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57205712A JPS57205712A (en) | 1982-12-16 |
| JPH0210924B2 true JPH0210924B2 (fr) | 1990-03-12 |
Family
ID=14002929
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56090599A Granted JPS57205712A (en) | 1981-06-12 | 1981-06-12 | Production of liquid crystal display body |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57205712A (fr) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4736229A (en) * | 1983-05-11 | 1988-04-05 | Alphasil Incorporated | Method of manufacturing flat panel backplanes, display transistors and displays made thereby |
| TW201343B (fr) * | 1990-11-21 | 1993-03-01 | Toshiba Co Ltd |
-
1981
- 1981-06-12 JP JP56090599A patent/JPS57205712A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57205712A (en) | 1982-12-16 |
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