JPH02101532U - - Google Patents
Info
- Publication number
- JPH02101532U JPH02101532U JP850589U JP850589U JPH02101532U JP H02101532 U JPH02101532 U JP H02101532U JP 850589 U JP850589 U JP 850589U JP 850589 U JP850589 U JP 850589U JP H02101532 U JPH02101532 U JP H02101532U
- Authority
- JP
- Japan
- Prior art keywords
- film
- semiconductor device
- sog
- sog film
- ion implantation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000011229 interlayer Substances 0.000 claims description 2
- 238000005468 ion implantation Methods 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims description 2
- 150000002894 organic compounds Chemical class 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP850589U JPH02101532U (enExample) | 1989-01-27 | 1989-01-27 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP850589U JPH02101532U (enExample) | 1989-01-27 | 1989-01-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02101532U true JPH02101532U (enExample) | 1990-08-13 |
Family
ID=31214440
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP850589U Pending JPH02101532U (enExample) | 1989-01-27 | 1989-01-27 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02101532U (enExample) |
-
1989
- 1989-01-27 JP JP850589U patent/JPH02101532U/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5885890A (en) | Method of forming contact openings and an electric component formed from the same and other methods | |
| US5729056A (en) | Low cycle time CMOS process | |
| EP0296627A3 (en) | Method for manufacturing a semiconductor device | |
| JPH02101532U (enExample) | ||
| JP2755614B2 (ja) | 半導体装置の製造方法 | |
| JP2518767B2 (ja) | 半導体メモリ素子及びその製造方法 | |
| JPH08228008A (ja) | 薄膜トランジスタ及びその製造方法 | |
| JPH09289249A (ja) | 半導体装置の製造方法 | |
| US6271126B2 (en) | Method of forming contact openings | |
| JP3143967B2 (ja) | 薄膜トランジスタの製造方法 | |
| JPH0254960A (ja) | 半導体装置の製造方法 | |
| KR930003274B1 (ko) | 절연게이트형 전계효과 트랜지스터의 제조방법 | |
| JPH0964294A (ja) | 半導体装置の製造方法 | |
| JP2570749B2 (ja) | 半導体装置の製造方法 | |
| JPH04139882A (ja) | 薄膜トランジスタ | |
| JPH05267328A (ja) | 半導体装置の製造方法 | |
| JPH0194669A (ja) | 半導体装置の製造方法 | |
| JPS63167755U (enExample) | ||
| JPH0342873A (ja) | 半導体装置 | |
| KR970003835B1 (en) | Manufacture of mos transistor of semiconductor device | |
| JPS6429837U (enExample) | ||
| JPH02219237A (ja) | Ｍｉｓ型半導体装置 | |
| JPH0227751U (enExample) | ||
| JPS6154661A (ja) | 半導体装置の製造方法 | |
| JPH0846191A (ja) | 半導体装置の製造方法 |