JPH0154430B2 - - Google Patents
Info
- Publication number
- JPH0154430B2 JPH0154430B2 JP21518785A JP21518785A JPH0154430B2 JP H0154430 B2 JPH0154430 B2 JP H0154430B2 JP 21518785 A JP21518785 A JP 21518785A JP 21518785 A JP21518785 A JP 21518785A JP H0154430 B2 JPH0154430 B2 JP H0154430B2
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- evaporation source
- activation
- nozzle
- vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000004913 activation Effects 0.000 claims description 24
- 230000008020 evaporation Effects 0.000 claims description 19
- 238000001704 evaporation Methods 0.000 claims description 19
- 238000010438 heat treatment Methods 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 14
- 239000000126 substance Substances 0.000 claims description 12
- 238000007740 vapor deposition Methods 0.000 claims description 11
- 238000010894 electron beam technology Methods 0.000 claims description 8
- 150000002500 ions Chemical class 0.000 claims description 5
- 239000007789 gas Substances 0.000 description 17
- 239000000758 substrate Substances 0.000 description 13
- 239000002184 metal Substances 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052582 BN Inorganic materials 0.000 description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000004215 Carbon black (E152) Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21518785A JPS6277457A (ja) | 1985-09-30 | 1985-09-30 | 活性化ノズルを用いた蒸着法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21518785A JPS6277457A (ja) | 1985-09-30 | 1985-09-30 | 活性化ノズルを用いた蒸着法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6277457A JPS6277457A (ja) | 1987-04-09 |
| JPH0154430B2 true JPH0154430B2 (enExample) | 1989-11-17 |
Family
ID=16668115
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21518785A Granted JPS6277457A (ja) | 1985-09-30 | 1985-09-30 | 活性化ノズルを用いた蒸着法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6277457A (enExample) |
-
1985
- 1985-09-30 JP JP21518785A patent/JPS6277457A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6277457A (ja) | 1987-04-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6570172B2 (en) | Magnetron negative ion sputter source | |
| CA1308689C (en) | Method and apparatus for forming a thin film | |
| EP0288608B1 (en) | Apparatus for forming a thin film | |
| NL8600417A (nl) | Werkwijze voor het reactief opdampen van lagen uit oxiden, nitriden, oxynitriden en carbiden. | |
| JPS63274762A (ja) | 反応蒸着膜の形成装置 | |
| JPH0543787B2 (enExample) | ||
| US3492215A (en) | Sputtering of material simultaneously evaporated onto the target | |
| JPH0122729B2 (enExample) | ||
| US20030077401A1 (en) | System and method for deposition of coatings on a substrate | |
| JPH0154430B2 (enExample) | ||
| JPH0625835A (ja) | 真空蒸着方法及び真空蒸着装置 | |
| JPS60251269A (ja) | イオンプレ−テイング方法および装置 | |
| JPH0417669A (ja) | プラズマを用いた成膜方法およびrfイオンプレーティング装置 | |
| JPH0214426B2 (enExample) | ||
| JPS5941509B2 (ja) | 強付着性の特に硬質炭素層を大きな面積に蒸着するための装置 | |
| JPH031377B2 (enExample) | ||
| JP3464998B2 (ja) | イオンプレーティング装置及びイオンプレーティングによる蒸着膜の膜厚と組成分布を制御する方法 | |
| JPH02194165A (ja) | イオンプレーティングにおけるイオン化方法およびイオンプレーティング装置 | |
| JPS61227163A (ja) | 高硬度窒化ホウ素膜の製法 | |
| JPS61204370A (ja) | 化合物膜の形成方法 | |
| JP2504426B2 (ja) | cBN薄膜の形成方法及び形成装置 | |
| JPH04350156A (ja) | 薄膜形成装置 | |
| JP2620474B2 (ja) | イオンプレーティング装置 | |
| JPH05230654A (ja) | 合金皮膜のイオンプレーティング方法および装置 | |
| JPS6339668B2 (enExample) |