JPH0153488B2 - - Google Patents

Info

Publication number
JPH0153488B2
JPH0153488B2 JP58082336A JP8233683A JPH0153488B2 JP H0153488 B2 JPH0153488 B2 JP H0153488B2 JP 58082336 A JP58082336 A JP 58082336A JP 8233683 A JP8233683 A JP 8233683A JP H0153488 B2 JPH0153488 B2 JP H0153488B2
Authority
JP
Japan
Prior art keywords
resistance value
oxide semiconductor
present
glass
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58082336A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59207601A (ja
Inventor
Tomonobu Suzuki
Tsukasa Hatanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Unizon KK
Original Assignee
Unizon KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unizon KK filed Critical Unizon KK
Priority to JP8233683A priority Critical patent/JPS59207601A/ja
Publication of JPS59207601A publication Critical patent/JPS59207601A/ja
Publication of JPH0153488B2 publication Critical patent/JPH0153488B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Thermistors And Varistors (AREA)
JP8233683A 1983-05-10 1983-05-10 ガラス封入型酸化物半導体 Granted JPS59207601A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8233683A JPS59207601A (ja) 1983-05-10 1983-05-10 ガラス封入型酸化物半導体

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8233683A JPS59207601A (ja) 1983-05-10 1983-05-10 ガラス封入型酸化物半導体

Publications (2)

Publication Number Publication Date
JPS59207601A JPS59207601A (ja) 1984-11-24
JPH0153488B2 true JPH0153488B2 (enExample) 1989-11-14

Family

ID=13771714

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8233683A Granted JPS59207601A (ja) 1983-05-10 1983-05-10 ガラス封入型酸化物半導体

Country Status (1)

Country Link
JP (1) JPS59207601A (enExample)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS527535A (en) * 1975-07-02 1977-01-20 Ishikawajima Kenki Kk Drive system for catapillar type construction system vehicle

Also Published As

Publication number Publication date
JPS59207601A (ja) 1984-11-24

Similar Documents

Publication Publication Date Title
JPH05119015A (ja) 炭酸ガス検出素子
US3044968A (en) Positive temperature coefficient thermistor materials
JPH0153488B2 (enExample)
US2596284A (en) Method of forming thermistor by impregnation
JPS6255281B2 (enExample)
JPS63141206A (ja) 粒界絶縁型半導体磁器
JPS6253921B2 (enExample)
US2251745A (en) Method for manufacturing semiconducting resistors
JPS62293702A (ja) セラミツク質の酸化亜鉛バリスタ材料の製法
Mytton et al. High 1/f noise anomaly in semiconducting barium strontium titanate
JP2612247B2 (ja) Ｎｔｃサーミスタの製造法
JPH0473635B2 (enExample)
US3157833A (en) Transistor amplifier enclosed in an atmosphere of camphor naphthalene or combination thereof
JPH01222404A (ja) 電圧非直線抵抗体の製造方法
JPH09260107A (ja) サーミスタ素子及びその製造方法
US3830758A (en) Method of manufacturing electrically conducting material having a positive temperature coefficient of the resistance,and conductor manufactured of this material
JP3023920B2 (ja) 半導体磁器の製造方法
JPH0253924B2 (enExample)
JPH07211515A (ja) サーミスタ素子の製造方法
JPH05135913A (ja) サーミスタ用酸化物半導体の製造方法
JPH04124064A (ja) 高熱伝導性炭化珪素
JP3488742B2 (ja) ソフトフェライトの製造方法
JP2520699B2 (ja) 電圧依存非直線抵抗体の製造方法
JPS6077402A (ja) バリスタの製造方法
JP2619129B2 (ja) 電圧非直線抵抗体の製造方法及びこれに使用する匣鉢