JPH0151787B2 - - Google Patents

Info

Publication number
JPH0151787B2
JPH0151787B2 JP54040711A JP4071179A JPH0151787B2 JP H0151787 B2 JPH0151787 B2 JP H0151787B2 JP 54040711 A JP54040711 A JP 54040711A JP 4071179 A JP4071179 A JP 4071179A JP H0151787 B2 JPH0151787 B2 JP H0151787B2
Authority
JP
Japan
Prior art keywords
circuit
output
regions
voltage
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54040711A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55133127A (en
Inventor
Kunihiko Hirashima
Yoshiki Tanigawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Priority to JP4071179A priority Critical patent/JPS55133127A/ja
Publication of JPS55133127A publication Critical patent/JPS55133127A/ja
Publication of JPH0151787B2 publication Critical patent/JPH0151787B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/8314—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having gate insulating layers with different properties

Landscapes

  • Manipulation Of Pulses (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP4071179A 1979-04-04 1979-04-04 Semiconductor device Granted JPS55133127A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4071179A JPS55133127A (en) 1979-04-04 1979-04-04 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4071179A JPS55133127A (en) 1979-04-04 1979-04-04 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS55133127A JPS55133127A (en) 1980-10-16
JPH0151787B2 true JPH0151787B2 (enExample) 1989-11-06

Family

ID=12588158

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4071179A Granted JPS55133127A (en) 1979-04-04 1979-04-04 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55133127A (enExample)

Also Published As

Publication number Publication date
JPS55133127A (en) 1980-10-16

Similar Documents

Publication Publication Date Title
US5796290A (en) Temperature detection method and circuit using MOSFET
US5097302A (en) Semiconductor device having current detection capability
US3855610A (en) Semiconductor device
JP2004146866A (ja) 発振回路
US7193264B2 (en) Floating gate transistors
US3803461A (en) Semiconductor arrangements
JPH0812116B2 (ja) 半導体温度検出回路
KR920001717B1 (ko) 전압검지회로
US6388511B1 (en) Filter circuit
US6088208A (en) Electronic device, electronic switching apparatus including the same, and production method thereof
US3775623A (en) Semiconductor device for scanning digital signals
JPH0151787B2 (enExample)
US4797725A (en) Memory cell for SRAM with a dielectric layer over a gate electrode to provide a parallel resistive and capacitive element
US4300279A (en) Method for the manufacture of a monolithic, static memory cell
JPH0656890B2 (ja) 伝導度変調型たて型ｍｏｓ―ｆｅｔ
US5760441A (en) Metal oxide semiconductor device
JPH0467666A (ja) 半導体装置
JP3186107B2 (ja) 絶縁ゲート型電界効果トランジスタ
JPH02220474A (ja) 半導体装置
JPS626347B2 (enExample)
JPS6159544B2 (enExample)
JPH0575036A (ja) 半導体装置の製造方法および半導体装置
JP2967265B2 (ja) 半導体装置
JPS62109114A (ja) ボルテ−ジ．レギユレ−タ
JPH10333756A (ja) 電子装置並びにその電子装置を有する電子スイッチ装置及びその製造方法