JPH0151479B2 - - Google Patents
Info
- Publication number
- JPH0151479B2 JPH0151479B2 JP28512386A JP28512386A JPH0151479B2 JP H0151479 B2 JPH0151479 B2 JP H0151479B2 JP 28512386 A JP28512386 A JP 28512386A JP 28512386 A JP28512386 A JP 28512386A JP H0151479 B2 JPH0151479 B2 JP H0151479B2
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- film forming
- forming chamber
- central
- compound crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 44
- 150000001875 compounds Chemical class 0.000 claims description 33
- 238000004519 manufacturing process Methods 0.000 claims description 29
- 238000001704 evaporation Methods 0.000 claims description 9
- 230000008020 evaporation Effects 0.000 claims description 9
- 238000003955 hot wall epitaxy Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 description 21
- 230000002093 peripheral effect Effects 0.000 description 16
- 238000000034 method Methods 0.000 description 13
- 239000012535 impurity Substances 0.000 description 8
- 239000011701 zinc Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000001451 molecular beam epitaxy Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- 238000007738 vacuum evaporation Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000003877 atomic layer epitaxy Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28512386A JPS62143894A (ja) | 1986-11-29 | 1986-11-29 | 化合物結晶膜製造装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28512386A JPS62143894A (ja) | 1986-11-29 | 1986-11-29 | 化合物結晶膜製造装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58030094A Division JPS59156996A (ja) | 1983-02-23 | 1983-02-23 | 化合物結晶膜の製造方法とその装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62143894A JPS62143894A (ja) | 1987-06-27 |
| JPH0151479B2 true JPH0151479B2 (enrdf_load_stackoverflow) | 1989-11-02 |
Family
ID=17687413
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28512386A Granted JPS62143894A (ja) | 1986-11-29 | 1986-11-29 | 化合物結晶膜製造装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62143894A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0752716B2 (ja) * | 1990-06-05 | 1995-06-05 | 松下電器産業株式会社 | 熱分解セル |
-
1986
- 1986-11-29 JP JP28512386A patent/JPS62143894A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62143894A (ja) | 1987-06-27 |
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