JPH0149019B2 - - Google Patents

Info

Publication number
JPH0149019B2
JPH0149019B2 JP60026426A JP2642685A JPH0149019B2 JP H0149019 B2 JPH0149019 B2 JP H0149019B2 JP 60026426 A JP60026426 A JP 60026426A JP 2642685 A JP2642685 A JP 2642685A JP H0149019 B2 JPH0149019 B2 JP H0149019B2
Authority
JP
Japan
Prior art keywords
solar cell
layer
amorphous
dividing
electrode layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP60026426A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61187377A (ja
Inventor
Kenji Nakatani
Tetsuo Sato
Hiroshi Okaniwa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Teijin Ltd
Original Assignee
Teijin Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teijin Ltd filed Critical Teijin Ltd
Priority to JP60026426A priority Critical patent/JPS61187377A/ja
Priority to US06/828,197 priority patent/US4697041A/en
Priority to FR868602039A priority patent/FR2577716B1/fr
Priority to DE19863604894 priority patent/DE3604894A1/de
Publication of JPS61187377A publication Critical patent/JPS61187377A/ja
Publication of JPH0149019B2 publication Critical patent/JPH0149019B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Photovoltaic Devices (AREA)
JP60026426A 1985-02-15 1985-02-15 非晶質太陽電池の分割加工方法 Granted JPS61187377A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP60026426A JPS61187377A (ja) 1985-02-15 1985-02-15 非晶質太陽電池の分割加工方法
US06/828,197 US4697041A (en) 1985-02-15 1986-02-10 Integrated solar cells
FR868602039A FR2577716B1 (fr) 1985-02-15 1986-02-14 Piles solaires integrees et leur procede de fabrication
DE19863604894 DE3604894A1 (de) 1985-02-15 1986-02-15 Integrierte solarzellen und verfahren zu ihrer herstellung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60026426A JPS61187377A (ja) 1985-02-15 1985-02-15 非晶質太陽電池の分割加工方法

Publications (2)

Publication Number Publication Date
JPS61187377A JPS61187377A (ja) 1986-08-21
JPH0149019B2 true JPH0149019B2 (enrdf_load_stackoverflow) 1989-10-23

Family

ID=12193191

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60026426A Granted JPS61187377A (ja) 1985-02-15 1985-02-15 非晶質太陽電池の分割加工方法

Country Status (1)

Country Link
JP (1) JPS61187377A (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63287076A (ja) * 1987-05-19 1988-11-24 Sanyo Electric Co Ltd 光起電力装置
US20020011641A1 (en) * 2000-07-06 2002-01-31 Oswald Robert S. Partially transparent photovoltaic modules
JP2003124483A (ja) * 2001-10-17 2003-04-25 Toyota Motor Corp 光起電力素子
JP2006073690A (ja) * 2004-09-01 2006-03-16 Disco Abrasive Syst Ltd ウエーハの分割方法
US8593727B2 (en) * 2011-04-25 2013-11-26 Vladimir G. Kozlov Single-shot laser ablation of a metal film on a polymer membrane
JP2013089659A (ja) * 2011-10-14 2013-05-13 Nitto Denko Corp 太陽電池セルの製造方法、及び太陽電池モジュール

Also Published As

Publication number Publication date
JPS61187377A (ja) 1986-08-21

Similar Documents

Publication Publication Date Title
US4697041A (en) Integrated solar cells
US4721629A (en) Method of manufacturing photovoltaic device
US6720576B1 (en) Plasma processing method and photoelectric conversion device
EP0201312B1 (en) Solar cell interconnection by discrete conductive regions
US5821597A (en) Photoelectric conversion device
JPH05183177A (ja) 薄膜太陽電池およびその作製方法
US4668840A (en) Photovoltaic device
JPH0472392B2 (enrdf_load_stackoverflow)
US5981864A (en) Photovoltaic element array and method of fabricating the same
JPH0851229A (ja) 集積型太陽電池およびその製造方法
JPH0149019B2 (enrdf_load_stackoverflow)
JPS61214483A (ja) 集積型太陽電池の製造方法
JP2000196117A (ja) 光電変換装置の作製方法
US6576866B1 (en) Method for structuring transparent electrode layers
JP3685964B2 (ja) 光電変換装置
JPS62147784A (ja) 非晶質太陽電池及びその製造方法
JPH0243776A (ja) 薄膜太陽電池の製造方法
JPS61156775A (ja) 非晶質シリコン太陽電池の分割加工方法
JPH09135036A (ja) 光起電力装置の製造方法
JP2000022187A (ja) ＣｄＳ／ＣｄＴｅ太陽電池およびその製造方法
JPS61241981A (ja) 薄膜太陽電池の製造方法
JP2517226B2 (ja) 半導体装置の製造方法
JPH055194B2 (enrdf_load_stackoverflow)
JPH0519992B2 (enrdf_load_stackoverflow)
JP2001237439A (ja) 集積型薄膜太陽電池の製造方法およびその方法による集積型薄膜太陽電池

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees