JPH0147871B2 - - Google Patents

Info

Publication number

JPH0147871B2

JPH0147871B2 JP57201925A JP20192582A JPH0147871B2 JP H0147871 B2 JPH0147871 B2 JP H0147871B2 JP 57201925 A JP57201925 A JP 57201925A JP 20192582 A JP20192582 A JP 20192582A JP H0147871 B2 JPH0147871 B2 JP H0147871B2

Authority

JP

Japan

Prior art keywords

resistor

heating

cro

sio

resistance value

Prior art date

1982-11-19

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Links

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• 238000010438 heat treatment Methods 0.000 claims description 57
• 239000000956 alloy Substances 0.000 claims description 16
• 229910045601 alloy Inorganic materials 0.000 claims description 15
• 229910008065 Si-SiO Inorganic materials 0.000 claims description 4
• 229910006405 Si—SiO Inorganic materials 0.000 claims description 4
• 239000000203 mixture Substances 0.000 description 22
• 238000001816 cooling Methods 0.000 description 17
• 239000007789 gas Substances 0.000 description 16
• 238000000034 method Methods 0.000 description 9
• 239000010410 layer Substances 0.000 description 7
• 238000004458 analytical method Methods 0.000 description 6
• 238000010586 diagram Methods 0.000 description 6
• 238000004519 manufacturing process Methods 0.000 description 6
• 239000000758 substrate Substances 0.000 description 6
• KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
• 230000015572 biosynthetic process Effects 0.000 description 4
• 230000006866 deterioration Effects 0.000 description 4
• 239000000463 material Substances 0.000 description 4
• 238000012360 testing method Methods 0.000 description 4
• 230000007423 decrease Effects 0.000 description 3
• 238000002474 experimental method Methods 0.000 description 3
• 239000000126 substance Substances 0.000 description 3
• 239000010409 thin film Substances 0.000 description 3
• 238000013461 design Methods 0.000 description 2
• 238000005516 engineering process Methods 0.000 description 2
• 238000005530 etching Methods 0.000 description 2
• 230000020169 heat generation Effects 0.000 description 2
• 229910002059 quaternary alloy Inorganic materials 0.000 description 2
• 238000004544 sputter deposition Methods 0.000 description 2
• 230000001052 transient effect Effects 0.000 description 2
• 229910019819 Cr—Si Inorganic materials 0.000 description 1
• 229910000676 Si alloy Inorganic materials 0.000 description 1
• 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
• PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
• QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
• 238000007796 conventional method Methods 0.000 description 1
• 230000000694 effects Effects 0.000 description 1
• 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 1
• 239000011521 glass Substances 0.000 description 1
• 239000001301 oxygen Substances 0.000 description 1
• 229910052760 oxygen Inorganic materials 0.000 description 1
• 238000001259 photo etching Methods 0.000 description 1
• 239000011241 protective layer Substances 0.000 description 1
• 238000001552 radio frequency sputter deposition Methods 0.000 description 1
• 238000011160 research Methods 0.000 description 1
• 230000002441 reversible effect Effects 0.000 description 1
• 238000013112 stability test Methods 0.000 description 1