JPH0147009B2 - - Google Patents
Info
- Publication number
- JPH0147009B2 JPH0147009B2 JP59074690A JP7469084A JPH0147009B2 JP H0147009 B2 JPH0147009 B2 JP H0147009B2 JP 59074690 A JP59074690 A JP 59074690A JP 7469084 A JP7469084 A JP 7469084A JP H0147009 B2 JPH0147009 B2 JP H0147009B2
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- methacrylate
- sensitive material
- resist
- monomer group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 18
- 238000010894 electron beam technology Methods 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 14
- -1 aryl methacrylates Chemical class 0.000 claims description 10
- 239000000178 monomer Substances 0.000 claims description 10
- PPXAHQRRLKQYTG-UHFFFAOYSA-N 2-phenylpropan-2-yl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC(C)(C)C1=CC=CC=C1 PPXAHQRRLKQYTG-UHFFFAOYSA-N 0.000 claims description 5
- 229920001577 copolymer Polymers 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- BQMWZHUIGYNOAL-UHFFFAOYSA-N 1-phenylethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC(C)C1=CC=CC=C1 BQMWZHUIGYNOAL-UHFFFAOYSA-N 0.000 claims description 2
- 125000000217 alkyl group Chemical group 0.000 claims description 2
- 235000010290 biphenyl Nutrition 0.000 claims description 2
- 239000004305 biphenyl Substances 0.000 claims description 2
- 125000004432 carbon atom Chemical group C* 0.000 claims description 2
- 125000001188 haloalkyl group Chemical group 0.000 claims description 2
- 229920001519 homopolymer Polymers 0.000 claims description 2
- QIWKUEJZZCOPFV-UHFFFAOYSA-N phenyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC1=CC=CC=C1 QIWKUEJZZCOPFV-UHFFFAOYSA-N 0.000 claims description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 claims description 2
- SJMYWORNLPSJQO-UHFFFAOYSA-N tert-butyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC(C)(C)C SJMYWORNLPSJQO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 1
- 238000010884 ion-beam technique Methods 0.000 claims 1
- 150000003377 silicon compounds Chemical class 0.000 claims 1
- 239000002344 surface layer Substances 0.000 claims 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 18
- 239000011347 resin Substances 0.000 description 18
- 229920005989 resin Polymers 0.000 description 18
- 239000000758 substrate Substances 0.000 description 10
- 230000007261 regionalization Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229920006254 polymer film Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000000609 electron-beam lithography Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- PTTPXKJBFFKCEK-UHFFFAOYSA-N 2-Methyl-4-heptanone Chemical compound CC(C)CC(=O)CC(C)C PTTPXKJBFFKCEK-UHFFFAOYSA-N 0.000 description 1
- CWBLKOLBEWWCOP-UHFFFAOYSA-N 2-methylprop-2-enoic acid;phenyl 2-methylprop-2-enoate Chemical compound CC(=C)C(O)=O.CC(=C)C(=O)OC1=CC=CC=C1 CWBLKOLBEWWCOP-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229920003145 methacrylic acid copolymer Polymers 0.000 description 1
- 229940117841 methacrylic acid copolymer Drugs 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7469084A JPS60218843A (ja) | 1984-04-13 | 1984-04-13 | パタン形成方法 |
| US06/721,306 US4634645A (en) | 1984-04-13 | 1985-04-09 | Method of forming resist micropattern |
| CA000478690A CA1264596A (en) | 1984-04-13 | 1985-04-10 | Method of forming resist micropattern |
| DE8585104417T DE3581822D1 (de) | 1984-04-13 | 1985-04-11 | Verfahren zur herstellung von mikroschutzlack-bildern. |
| EP85104417A EP0158357B1 (en) | 1984-04-13 | 1985-04-11 | Method of forming resist micropattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7469084A JPS60218843A (ja) | 1984-04-13 | 1984-04-13 | パタン形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60218843A JPS60218843A (ja) | 1985-11-01 |
| JPH0147009B2 true JPH0147009B2 (ko) | 1989-10-12 |
Family
ID=13554462
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7469084A Granted JPS60218843A (ja) | 1984-04-13 | 1984-04-13 | パタン形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60218843A (ko) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6136307A (ja) * | 1984-07-30 | 1986-02-21 | Mitsubishi Rayon Co Ltd | 低吸湿性メタクリル系樹脂 |
| JPS6450425A (en) * | 1987-08-20 | 1989-02-27 | Toshiba Corp | Formation of fine pattern |
| JP5655443B2 (ja) * | 2010-09-06 | 2015-01-21 | 住友電気工業株式会社 | 無機化合物膜のエッチング方法および半導体光素子の製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59155929A (ja) * | 1983-02-25 | 1984-09-05 | Mitsubishi Electric Corp | 微細パタ−ンの形成方法 |
-
1984
- 1984-04-13 JP JP7469084A patent/JPS60218843A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59155929A (ja) * | 1983-02-25 | 1984-09-05 | Mitsubishi Electric Corp | 微細パタ−ンの形成方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60218843A (ja) | 1985-11-01 |
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