JPH0146863B2 - - Google Patents

Info

Publication number
JPH0146863B2
JPH0146863B2 JP826681A JP826681A JPH0146863B2 JP H0146863 B2 JPH0146863 B2 JP H0146863B2 JP 826681 A JP826681 A JP 826681A JP 826681 A JP826681 A JP 826681A JP H0146863 B2 JPH0146863 B2 JP H0146863B2
Authority
JP
Japan
Prior art keywords
weight
present
methacrylate
dry etching
methacrylic acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP826681A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57122430A (en
Inventor
Katsuyuki Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP826681A priority Critical patent/JPS57122430A/ja
Priority to US06/339,414 priority patent/US4430419A/en
Priority to GB8201246A priority patent/GB2093048B/en
Priority to CA000394565A priority patent/CA1211600A/en
Priority to DE19823201815 priority patent/DE3201815A1/de
Priority to FR8200936A priority patent/FR2498198B1/fr
Priority to NLAANVRAGE8200211,A priority patent/NL186119C/xx
Publication of JPS57122430A publication Critical patent/JPS57122430A/ja
Publication of JPH0146863B2 publication Critical patent/JPH0146863B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D133/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
    • C09D133/04—Homopolymers or copolymers of esters
    • C09D133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C09D133/10—Homopolymers or copolymers of methacrylic acid esters

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
JP826681A 1981-01-22 1981-01-22 Positive type resist material with dry etching resistance Granted JPS57122430A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP826681A JPS57122430A (en) 1981-01-22 1981-01-22 Positive type resist material with dry etching resistance
US06/339,414 US4430419A (en) 1981-01-22 1982-01-15 Positive resist and method for manufacturing a pattern thereof
GB8201246A GB2093048B (en) 1981-01-22 1982-01-18 Positive resist copolymer and method for manufacturing a pattern therewith
CA000394565A CA1211600A (en) 1981-01-22 1982-01-20 Positive resist and method for manufacturing a pattern thereof
DE19823201815 DE3201815A1 (de) 1981-01-22 1982-01-21 Positives resistmaterial und verfahren zur herstellung eines musters daraus
FR8200936A FR2498198B1 (fr) 1981-01-22 1982-01-21 Revetement resistant positif et procede pour la formation d'un dessin de ce revetement sur un substrat
NLAANVRAGE8200211,A NL186119C (nl) 1981-01-22 1982-01-21 Werkwijze voor het vormen van een patroon voor een positieve resist.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP826681A JPS57122430A (en) 1981-01-22 1981-01-22 Positive type resist material with dry etching resistance

Publications (2)

Publication Number Publication Date
JPS57122430A JPS57122430A (en) 1982-07-30
JPH0146863B2 true JPH0146863B2 (cg-RX-API-DMAC7.html) 1989-10-11

Family

ID=11688348

Family Applications (1)

Application Number Title Priority Date Filing Date
JP826681A Granted JPS57122430A (en) 1981-01-22 1981-01-22 Positive type resist material with dry etching resistance

Country Status (1)

Country Link
JP (1) JPS57122430A (cg-RX-API-DMAC7.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5868743A (ja) * 1981-10-21 1983-04-23 Hitachi Ltd 放射線感応性有機高分子材料
JPH0816783B2 (ja) * 1989-09-11 1996-02-21 工業技術院物質工学工業技術研究所長 可視光記録材料

Also Published As

Publication number Publication date
JPS57122430A (en) 1982-07-30

Similar Documents

Publication Publication Date Title
US4011351A (en) Preparation of resist image with methacrylate polymers
US4061829A (en) Negative resist for X-ray and electron beam lithography and method of using same
US4087569A (en) Prebaking treatment for resist mask composition and mask making process using same
US6171757B1 (en) Organometallic polymers and use thereof
US4286049A (en) Method of forming a negative resist pattern
JPS6048022B2 (ja) 電子感応レジスト
US4096290A (en) Resist mask formation process with haloalkyl methacrylate copolymers
US3770433A (en) High sensitivity negative electron resist
US4430419A (en) Positive resist and method for manufacturing a pattern thereof
Wilkins et al. Preliminary evaluation of copolymers of Methyl Methacrylate and acyloximino methacrylate as deep UV resists
JPH0146863B2 (cg-RX-API-DMAC7.html)
EP0119017B1 (en) Electron-beam and x-ray sensitive polymers and resists
JPS62235943A (ja) リソグラフイ−法を利用した電子デバイスの製造方法
US4243742A (en) Radiation-sensitive positively acting materials
US4623609A (en) Process for forming patterns using ionizing radiation sensitive resist
JPH087443B2 (ja) 高解像度ポジ型放射線感応性レジスト
Kitakohji et al. Polymers constituted by methyl methacrylate, methacrylic acid, and methacryloyl chloride as a positive electron resist
JPH087441B2 (ja) ポジ型高感度放射線感応性レジスト
JPS5817105A (ja) 電離放射線感応性材料
JPS5886726A (ja) パタ−ン形成法
JPH087442B2 (ja) 放射線感応性レジスト
JP2871010B2 (ja) ポジ型電子線レジスト液
JPS58216243A (ja) 電離放射線感応性材料
JPH087444B2 (ja) 感放射線ポジ型レジスト
JPS61126547A (ja) 電子線レジスト材料