JPH0142636B2 - - Google Patents
Info
- Publication number
- JPH0142636B2 JPH0142636B2 JP58039001A JP3900183A JPH0142636B2 JP H0142636 B2 JPH0142636 B2 JP H0142636B2 JP 58039001 A JP58039001 A JP 58039001A JP 3900183 A JP3900183 A JP 3900183A JP H0142636 B2 JPH0142636 B2 JP H0142636B2
- Authority
- JP
- Japan
- Prior art keywords
- strip
- main
- semiconductor
- shaped region
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 67
- 239000000758 substrate Substances 0.000 claims description 26
- 230000007423 decrease Effects 0.000 description 8
- 239000000969 carrier Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
Landscapes
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58039001A JPS59165457A (ja) | 1983-03-11 | 1983-03-11 | 半導体装置 |
| US06/585,606 US4646122A (en) | 1983-03-11 | 1984-03-02 | Semiconductor device with floating remote gate turn-off means |
| CA000449008A CA1214572A (en) | 1983-03-11 | 1984-03-07 | Semiconductor device |
| EP84102491A EP0128268B1 (en) | 1983-03-11 | 1984-03-08 | Semiconductor device having a control electrode |
| DE8484102491T DE3471833D1 (en) | 1983-03-11 | 1984-03-08 | Semiconductor device having a control electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58039001A JPS59165457A (ja) | 1983-03-11 | 1983-03-11 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59165457A JPS59165457A (ja) | 1984-09-18 |
| JPH0142636B2 true JPH0142636B2 (enrdf_load_stackoverflow) | 1989-09-13 |
Family
ID=12540882
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58039001A Granted JPS59165457A (ja) | 1983-03-11 | 1983-03-11 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59165457A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61142772A (ja) * | 1984-12-17 | 1986-06-30 | Hitachi Ltd | 半導体装置 |
| JPH0325258U (enrdf_load_stackoverflow) * | 1989-07-24 | 1991-03-15 |
-
1983
- 1983-03-11 JP JP58039001A patent/JPS59165457A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59165457A (ja) | 1984-09-18 |
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