JPH0142618B2 - - Google Patents
Info
- Publication number
- JPH0142618B2 JPH0142618B2 JP11287783A JP11287783A JPH0142618B2 JP H0142618 B2 JPH0142618 B2 JP H0142618B2 JP 11287783 A JP11287783 A JP 11287783A JP 11287783 A JP11287783 A JP 11287783A JP H0142618 B2 JPH0142618 B2 JP H0142618B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- temperature
- semiconductor
- substrate
- heater
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 39
- 239000010409 thin film Substances 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 24
- 239000013078 crystal Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- 238000001514 detection method Methods 0.000 claims description 10
- 238000002844 melting Methods 0.000 claims description 10
- 230000008018 melting Effects 0.000 claims description 10
- 230000005457 Black-body radiation Effects 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000000137 annealing Methods 0.000 description 14
- 239000010408 film Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11287783A JPS605508A (ja) | 1983-06-24 | 1983-06-24 | 半導体結晶薄膜の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11287783A JPS605508A (ja) | 1983-06-24 | 1983-06-24 | 半導体結晶薄膜の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS605508A JPS605508A (ja) | 1985-01-12 |
| JPH0142618B2 true JPH0142618B2 (enrdf_load_html_response) | 1989-09-13 |
Family
ID=14597762
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11287783A Granted JPS605508A (ja) | 1983-06-24 | 1983-06-24 | 半導体結晶薄膜の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS605508A (enrdf_load_html_response) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63203814A (ja) * | 1987-02-18 | 1988-08-23 | Murata Mach Ltd | 紡糸捲取機 |
| JPH06124913A (ja) | 1992-06-26 | 1994-05-06 | Semiconductor Energy Lab Co Ltd | レーザー処理方法 |
| WO1994010545A1 (en) * | 1992-11-03 | 1994-05-11 | Interuniversitair Micro-Elektronica Vzw | System for the controlled heating of an object |
| US7438468B2 (en) * | 2004-11-12 | 2008-10-21 | Applied Materials, Inc. | Multiple band pass filtering for pyrometry in laser based annealing systems |
-
1983
- 1983-06-24 JP JP11287783A patent/JPS605508A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS605508A (ja) | 1985-01-12 |
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