JPH01318227A - Photo assisted cvd device - Google Patents
Photo assisted cvd deviceInfo
- Publication number
- JPH01318227A JPH01318227A JP15009388A JP15009388A JPH01318227A JP H01318227 A JPH01318227 A JP H01318227A JP 15009388 A JP15009388 A JP 15009388A JP 15009388 A JP15009388 A JP 15009388A JP H01318227 A JPH01318227 A JP H01318227A
- Authority
- JP
- Japan
- Prior art keywords
- lamp
- pressure mercury
- magnetic field
- substrate
- mercury lamp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052753 mercury Inorganic materials 0.000 claims abstract description 29
- 230000003287 optical effect Effects 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 abstract description 20
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052786 argon Inorganic materials 0.000 abstract description 4
- 239000002245 particle Substances 0.000 abstract description 4
- -1 argon ions Chemical class 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 239000010409 thin film Substances 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000002994 raw material Substances 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 241000220317 Rosa Species 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
本発明は、低圧水銀ランプを具備した光ＣＶＤ装置に関
する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a photo-CVD apparatus equipped with a low-pressure mercury lamp.
（従来の技術）
Ａ戊
従来の輪圧水銀２ンプを具備した元口装置の一例を第３
図に示す０真壁反応容器（３１）の？に仮サセプター（
３２）上にヒーター（３３）より加熱された基板（３４
）が設置され、ランプ室（３５）の低圧水銀ランプ（３
６）から石英窓（３７）を通して照射される紫外線が、
ガス導入パルプ（３８）より供給される原料ガスを分解
するかあるいは水銀などの増感剤を励起しその励起され
た増感剤が原料ガスを分解することｌこより基板（３４
Ｊ上に薄膜が堆積する。原料ガス導入前に３１の真壁反
応容器は高Ｘ窒排気バルブ（３９）を通して高真空ｌこ
排気され、碑大したガスはバルブ（４０）を通して排気
される。(Prior art) An example of a conventional head-mouth device equipped with two circular pressure mercury pumps is shown in the third example.
What about the zero Makabe reaction vessel (31) shown in the figure? Temporary susceptor (
32) A substrate (34) heated by a heater (33) is placed on top of the substrate (34).
) is installed, and a low-pressure mercury lamp (3) in the lamp chamber (35) is installed.
6) through the quartz window (37),
The substrate (34) decomposes the raw material gas supplied from the gas introduction pulp (38) or excites a sensitizer such as mercury, and the excited sensitizer decomposes the raw material gas.
A thin film is deposited on J. Before introducing the raw material gas, the Makabe reaction vessel 31 is evacuated to a high vacuum through the high-X nitrogen exhaust valve (39), and the excessively large gas is exhausted through the valve (40).
連常のプロセスでは、薄膜の堆積方向へのｊ良質を均質
にするため、十分基板（３４）の温度が安定状態に達し
た後に、３６の低圧水銀ランプを点灯し薄膜を堆積する
。しかしながら、低圧水銀ランプの発光効率は全投入パ
ワーの約１５〜２０％栓度であり、残りの８０〜８５俤
は主に熱にｆ換されるため、ランプ点灯後に基板の流度
が次第に上昇するという問題があった。一般に、堆積膜
のｉ質は基板温度に強く依存するため、その結果、初期
の堆積膜の均質性が著しく損なわれ、この薄膜を用いた
素子特性の不良および素子特性の再現性の不良な招いて
いた。In the continuous process, in order to make the quality of the thin film uniform in the direction of deposition, after the temperature of the substrate (34) has sufficiently reached a stable state, the low pressure mercury lamp 36 is turned on to deposit the thin film. However, the luminous efficiency of low-pressure mercury lamps is about 15-20% of the total input power, and the remaining 80-85 watts is mainly converted into heat, so the flow rate of the substrate gradually increases after the lamp is lit. There was a problem. In general, the i-quality of the deposited film strongly depends on the substrate temperature, and as a result, the initial homogeneity of the deposited film is significantly impaired, leading to poor device characteristics and poor reproducibility of device characteristics using this thin film. was.
（発明が解決しようとする線順）
以上のように、従来の低圧水銀ランプを用いた光（至）
装置では、低圧水銀ランプ点灯後に基板温度が次第に上
昇し、初期の堆積膜の均質性が損なわれるのでこの薄膜
を用いた素子特性が不良になり、加えて素子特性の再現
性も劣るという問題があった〇
本発明は、上記の問題を解決するためｌこなされたもの
であり、低圧水銀ランプを点灯しても基板温度の安定化
が実現し、初期の堆積膜の均質化が図られ、素子特性お
よび再ノー−１性の向上を実現できる光已の装置を提供
することを目的とでる。(Line order to be solved by the invention) As described above, light (to) using a conventional low-pressure mercury lamp
In the device, the substrate temperature gradually rises after the low-pressure mercury lamp is turned on, which impairs the homogeneity of the initial deposited film, resulting in poor device characteristics using this thin film and, in addition, poor reproducibility of device characteristics. The present invention was developed to solve the above problems, and even when a low-pressure mercury lamp is turned on, the substrate temperature can be stabilized, and the initial deposited film can be homogenized. The object of the present invention is to provide an optical device that can improve device characteristics and reproducibility.
（腺迦を解決するための手段）
本発明は、低圧水銀ランプを具備した光ＣＶＤ装置ｌこ
おいて、前記低圧水銀ランプの長さ方向に磁場を引加す
る磁場引加手段を設けたものである。(Means for solving the problem) The present invention provides an optical CVD apparatus equipped with a low-pressure mercury lamp, which is provided with a magnetic field applying means for applying a magnetic field in the length direction of the low-pressure mercury lamp. It is.
本発明の磁場引加手段は、直Ｎ、または交流電流をコイ
ルに流すことにより磁場を発生する手段であっても、永
久磁石ｌζより磁場を発生てる手段であってもよい。The magnetic field applying means of the present invention may be a means for generating a magnetic field by passing a direct N or alternating current through a coil, or a means for generating a magnetic field from a permanent magnet lζ.
本発明の光ＣＶＤ装置は、水銀などのバ１感剤を用いた
光ＣＶＤ法や増感剤を用いない直接励起光（至）法のい
ずれにも適用できるとともに、アモルファスシリコン（
以下 ａ−８ｉと記す）などの半導体薄膜や窒化膜、酸
化膜などの絶縁物薄膜の製造ｔご用いることができる。The photo-CVD apparatus of the present invention can be applied to either a photo-CVD method using a sensitizer such as mercury or a direct excitation light method that does not use a sensitizer.
It can be used to manufacture semiconductor thin films such as (hereinafter referred to as a-8i) and insulating thin films such as nitride films and oxide films.
また本発明の磁場の強度は、低圧水銀ランプ内の封入ア
ルゴンガス圧力や放電電流などの条件に応じて適切な範
囲が存在するが、放電をランプの中心軸付近に集中させ
られる強度であれば艮い〇（作＃４）
低圧水銀ランプから発せられる熱線（赤外線。The strength of the magnetic field of the present invention has an appropriate range depending on the conditions such as the pressure of the argon gas sealed in the low-pressure mercury lamp and the discharge current, but as long as it is strong enough to concentrate the discharge near the central axis of the lamp.艮〇(Work #4) Heat rays (infrared rays) emitted from a low-pressure mercury lamp.
遠赤外線）の大きな原因として、放電中のランプ内で生
じるアルゴンイオンや電子が石英製のランプ内壁に衝突
しランプを加熱することが挙げられる。A major cause of far-infrared rays is that argon ions and electrons generated within the lamp during discharge collide with the quartz lamp inner wall, heating the lamp.
低圧水銀ランプの長さ力回に磁場が加わった礪膏、ラン
プ管内の放電プラズマ中に存在するアルゴンイオンや電
子などの荷電粒子は、ランプ長さ方向と平行なうンプ管
内の中心軸付近でらせん運動を行うため、放電をランプ
管内中心軸付近に集中させることができ、放電をランプ
内壁から遠ざけることができる。その結果、ランプ内壁
ｌこ衝突する荷電粒子数が減少し、ランプの加熱を防止
できるためランプ点灯後の基板温度の上昇を防止できる
。When a magnetic field is applied to the length of a low-pressure mercury lamp, charged particles such as argon ions and electrons present in the discharge plasma inside the lamp tube spiral near the central axis inside the pump tube, which is parallel to the length direction of the lamp. Because of the movement, the discharge can be concentrated near the central axis within the lamp tube, and the discharge can be moved away from the inner wall of the lamp. As a result, the number of charged particles colliding with the inner wall of the lamp is reduced, and heating of the lamp can be prevented, thereby preventing an increase in substrate temperature after the lamp is turned on.
このよう−こして、本発明の光Ｏ■装置の構成をとれば
、ランプ点灯後の基板温度の安定化が図られるので、堆
積初期膜が均質になり、素子特性の向上および再現性の
向上が実現できる。In this way, by adopting the configuration of the optical O2 device of the present invention, the temperature of the substrate after the lamp is turned on can be stabilized, so that the initially deposited film becomes homogeneous, and the device characteristics and reproducibility are improved. can be realized.
【実施例）
以下、本発明の実施例を図面を参照して畦細に説明する
。[Embodiments] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
第１図は、−実施例Ｉこよる光ＣＶＤ装置の低圧水銀ラ
ンプの平面図である。低圧水銀ランプ１１に磁場発生用
コイル１２を巻き、ランプ長さ方向（こ磁場を印加する
０ここで１３は磁場発生用コイル１２４ζ［流または交
流電流を通すための直流または交流電源である。磁場は
、第２図に示すようｌζ２２の低圧水銀ランプ長さ方向
に磁場が印加されるように配置すれば良い。FIG. 1 is a plan view of a low-pressure mercury lamp of a photo-CVD apparatus according to Example I. A magnetic field generating coil 12 is wound around a low-pressure mercury lamp 11, and a magnetic field is applied in the lengthwise direction of the lamp. may be arranged so that a magnetic field is applied in the length direction of the low pressure mercury lamp lζ22 as shown in FIG.
この実施例による低圧水銀ランプを具備した元Ｃ’ＶＤ
装置の低圧水銀ランプ点灯後の基板表面温度の温度上杵
を従来の場合と比較した。ランプ点灯Ｑｉ口こは、ヒー
ター３３により基板表面温度を２００〜２５０℃の範囲
のある特定ｍ度において一定ｌこ保った。低圧水銀ラン
プへの入カバワーは１００Ｗ 。Original C'VD equipped with low pressure mercury lamp according to this embodiment
The temperature of the substrate surface after the device's low-pressure mercury lamp was turned on was compared with the conventional case. When the lamp was turned on, the substrate surface temperature was kept constant at a certain degree in the range of 200 to 250 degrees Celsius by means of a heater 33. The input power to the low pressure mercury lamp is 100W.
低圧水銀ランプと基板間の距離は５０ｍｒｎの条件を用
いた。また反応室にはヘリウムガスを導入し、ガス圧力
を０．１〜１ ｔｏｒｒ（１）範囲で一定に保った。比
較の結果、従来の光ＣＶＤ装置６ζおいては、低王水嫁
ランプ点灯後の基板温度が次第に上昇し、点灯後３０分
では約４０℃上昇したが、−１本実施例の光ＣＶＤ装置
ではランプ点灯後、数分以内に基板温度は安定し、基板
温度上昇を３℃以内に抑制することができた。The distance between the low-pressure mercury lamp and the substrate was set at 50 mrn. Further, helium gas was introduced into the reaction chamber, and the gas pressure was kept constant in the range of 0.1 to 1 torr (1). As a result of the comparison, in the conventional photo-CVD apparatus 6ζ, the substrate temperature gradually rose after the low aqua regia lamp was turned on, and rose by about 40 degrees Celsius 30 minutes after turning on, but -1 in the photo-CVD apparatus of this embodiment. In this case, the substrate temperature stabilized within several minutes after the lamp was turned on, and the rise in substrate temperature could be suppressed to within 3°C.
本実施例の元ＣＶＤ ４！置によって形成した水素化非
晶質シリコン薄膜または水素化非晶質シリコンを母体と
した窒素あるいは酸素を含有する絶縁体薄膜を用いた素
子は、初期堆積膜が均質１こなる効果により、従来例よ
りも明らかに特性を改善することができた。Original CVD of this example 4! Elements using a hydrogenated amorphous silicon thin film formed by a chemical process or an insulating thin film containing nitrogen or oxygen using hydrogenated amorphous silicon as a matrix are superior to conventional devices due to the effect that the initially deposited film is homogeneous. The characteristics were clearly improved.
以上述べたように、低圧水銀ランプを外部より印加され
た磁場中に設置することにより、基板温度の安定化を図
ることができ、本実施例の光（２）装置で形成した素子
特性や素子の再現性特性を改善することができる。As described above, by installing a low-pressure mercury lamp in an externally applied magnetic field, it is possible to stabilize the substrate temperature, and to improve the device characteristics and reproducibility characteristics can be improved.
１１．２２．３６・・・低圧水銀ランプ、１２・・・磁
杓発生用コイル、１３・・・磁場発生用コイルの直流ま
たは交流電源、 ２１．２３・・・１ｉＢ８３発生用永
久磁石、３１・・・真伊反応容器。11.22.36...Low-pressure mercury lamp, 12...Magnetic scoop generation coil, 13...DC or AC power supply for magnetic field generation coil, 21.23...1iB83 generation permanent magnet, 31. ...Mai reaction vessel.
Claims (1)
記低圧水銀ランプの長さ方向に磁場を引加する磁場引加
手段を設けたことを特徴とする光ＣＶＤ装置。An optical CVD apparatus equipped with a low-pressure mercury lamp, characterized in that the apparatus is provided with a magnetic field applying means for applying a magnetic field in the longitudinal direction of the low-pressure mercury lamp.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15009388A JPH01318227A (en) | 1988-06-20 | 1988-06-20 | Photo assisted cvd device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15009388A JPH01318227A (en) | 1988-06-20 | 1988-06-20 | Photo assisted cvd device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01318227A true JPH01318227A (en) | 1989-12-22 |
Family
ID=15489359
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15009388A Pending JPH01318227A (en) | 1988-06-20 | 1988-06-20 | Photo assisted cvd device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01318227A (en) |
-
1988
- 1988-06-20 JP JP15009388A patent/JPH01318227A/en active Pending
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