JP2001274150A - Plasma processing system, member for generating and introducing plasma, and slot electrode - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a plasma processing system performing high quality plasma processing by preventing mixture of impurities while ensuring the plasma processing rate of an article to be processed, a member for introducing plasma and a slot electrode. SOLUTION: A slot electrode is provided with a slit for guiding a wave of power source frequency required for plasma processing to a chamber for plasma processing an article to be processed. The slot electrode is divided into a plurality of regions having a uniform area, and the slit is arranged in each region. The slot electrode has a substantially constant slit density, because it is divided into a plurality of regions having a uniform area and the slit is arranged in each region.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a plasma processing apparatus, a plasma generation introducing member, and a slot electrode.

[0002]

2. Description of the Related Art In recent years, in the manufacturing process of semiconductor products,
A plasma processing apparatus may be used for processes such as film formation, etching, and ashing. For example, in a typical microwave plasma processing apparatus, 2.45 GHz
A microwave of about z passes through the waveguide and the slot electrode,
Objects to be processed such as semiconductor wafers and LCD substrates are arranged,
It is introduced into a processing chamber maintained under a reduced pressure environment by a vacuum pump. On the other hand, a reaction gas is also introduced into the processing chamber, is converted into plasma by microwaves, and becomes radicals and ions having strong activity. The radicals and ions react with the object to be processed to perform a film forming process, an etching process, and the like.

[0003] In some cases, microwaves pass through a dielectric plate between the slot electrode and the processing chamber. The dielectric plate maintains the processing chamber vacuum and allows microwaves to pass. Microwaves can only pass through an insulating material such as a dielectric plate. A conventional slot electrode has a large number of spirally or concentrically arranged slits for guiding microwaves to a processing chamber.

[0004]

However, the conventional slot electrode has a problem that high-quality plasma processing cannot be performed because the density of the slit is not considered. For example, the intensity of the ion energy from the microwave supplied from the slit of the slot electrode differs depending on the location, and the dielectric plate may be separated. When the dielectric plate is released, a dielectric material is mixed as impurities into the object to be processed, which hinders high quality plasma processing. On the other hand, if the slit is made smaller in order to prevent separation of the dielectric plate, the plasma processing speed is reduced and the yield is reduced. Further, when the slit density is different, the plasma density becomes non-uniform, and the processing depth of the object to be processed is partially changed, thereby preventing high-quality plasma processing.

Accordingly, it is a general object of the present invention to provide a new and useful plasma processing apparatus, a plasma generation introducing member, and a slot electrode which solve such problems.

More specifically, the present invention provides a plasma processing apparatus, a plasma generation introduction member, and a slot electrode for performing high-quality plasma processing by preventing the entry of impurities while securing the plasma processing speed to the object to be processed. This is an exemplary object of the present invention.

[0007]

According to an aspect of the present invention, there is provided a slot electrode having a slit for guiding a wave of a power supply frequency required for the plasma processing in a processing chamber for performing a plasma processing on an object to be processed. An electrode, dividing the slot electrode into a plurality of polygonal regions having an equal area and arranging the slits in each region;
The slot electrode is composed of a T-shaped or V-shaped set inclined at approximately 45 degrees from the center of the slot electrode. Since such a slot electrode is divided into a plurality of regions having an equal area and the slits are arranged in each region, the slot electrode has a substantially constant slit density. A plasma generation and introduction member having the slot electrode and a dielectric plate connected to the slot electrode to maintain the atmosphere of the processing chamber and allow the wave to pass therethrough; and the plasma generation and introduction member and the processing chamber. The plasma processing apparatus having the above configuration can also exert the function of the slot electrode.

[0008] Other objects and further features of the present invention will become apparent from the preferred embodiments described below with reference to the accompanying drawings.

[0009]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An exemplary microwave plasma processing apparatus 100 according to the present invention will be described below with reference to the accompanying drawings. In the drawings, the same reference numerals indicate the same members. Here, FIG. 1 is a schematic block diagram of the microwave plasma processing apparatus 100. The microwave plasma processing apparatus 100 according to the present embodiment has a processing chamber capable of housing a gate valve 101 connected to a cluster tool 300 and a susceptor 104 on which a workpiece W such as a semiconductor wafer substrate or an LCD substrate is placed. 102 and processing chamber 1
02, the microwave source 110, the antenna member 120, and the gas supply system 13
0 and 160. The control system of the plasma processing apparatus 100 is not shown.

The processing chamber 102 has a side wall and a bottom formed of a conductor such as aluminum. In this embodiment, the processing chamber 10
2 has, for example, a cylindrical shape, but the shape is not limited to a rectangular cross section and can be formed to be convex or the like. In the processing chamber 102, a susceptor 104 and a workpiece W are supported thereon. In FIG. 1, an electrostatic chuck and a clamp mechanism for fixing the workpiece W are omitted for convenience.

The susceptor 104 controls the temperature of the object W in the processing chamber 102. The temperature of the susceptor 104 is adjusted to a predetermined temperature range by the temperature adjusting device 190.

As shown in FIG. 2, the temperature control device 190 includes a control device 191, a cooling jacket 192, a sealing member 194, a temperature sensor 196, and a heater device 198. Cooling water is supplied. Here, FIG. 2 is a block diagram showing a more detailed structure of the temperature control device 190 shown in FIG. Control device 191
Controls the temperature of the susceptor 104 and the object to be processed W to be within a predetermined temperature range. Water source 1 for ease of control
The temperature of the cooling water supplied from 99 is preferably a constant temperature.

For example, when a silicon nitride film (Si ₃ N ₄ ) is directly formed on a silicon substrate (in the case of a single-layer nitride film) as a process for the object W, the control device 191 controls the susceptor 104 and the object to be processed. The temperature of the body W is about 450 ° C. to about 50
The heater device 198 is controlled so as to reach 0 ° C. If the object to be processed W is not maintained at about 450 ° C. or higher, dangling bonds occur. If dangling bonds occur, the threshold voltage changes as described later, which is not preferable.

Next, as a process of the object to be processed W, consider a case in which a silicon oxide film (SiO ₂ ) is formed on a silicon substrate and then a laminated structure in which a silicon nitride film is formed. In this case, nitrogen is introduced into the silicon oxide film to perform a plasma treatment to change the upper portion of the silicon oxide film into a silicon nitride film. In such processing, the control device 191 sets the temperature of the susceptor 104 and the temperature of the processing target object W to about 2 degrees.
The heater device 198 is controlled so that the temperature becomes 50 ° C. to about 350 ° C.

First, the reason why the controller 191 sets the temperature to about 350 ° C. or lower is as follows. That is, as shown in FIG. 3, when the temperature of the heater device 198 is set to about 350 ° C. or more, the nitrogen distribution is changed to the surface (upper portion) of the silicon oxide film.
In addition, a large amount is introduced into the inside of the silicon oxide film.
Here, FIG. 3 is a graph showing the nitrogen distribution in the depth direction when a laminated structure is formed on the object to be processed W at a high temperature (for example, about 500 ° C.), in which nitrogen extends from the surface of the silicon oxide film to 20 °. It will be understood that it has been reached.

In this case, nitrogen reaches the boundary between the silicon substrate and the silicon oxide film and forms a compound of silicon, oxygen and nitrogen, which lowers the performance of the semiconductor (for example, lowers the amplification factor). Not preferred. The rate at which nitrogen reaches the boundary between the silicon substrate and the silicon oxide film also depends on the size of the element. If the gate length is about 0.18 μm to 0.3 μm as in the conventional case, the effect will be negligible. However, the gate length has been shortened (for example, 0.13 μm, .10 μm
The present inventors anticipate that the effect will become increasingly negligible in the future.

On the other hand, as shown in FIG.
When the temperature of Step 8 is set to about 350 ° C. or lower, the nitrogen distribution is such that the amount of permeation into the silicon oxide film as well as the surface (upper) of the silicon oxide film is within an allowable range (10 ° or less). Here, FIG. 4 is a graph showing the nitrogen distribution in the depth direction when a laminated structure is formed on the object to be processed W at an appropriate temperature (for example, about 350 ° C.). As a result, it will be understood that the above problem can be avoided by setting the set temperature to about 350 ° C. or less.

Next, the reason why the controller 191 sets the temperature to about 250 ° C. or higher is as follows. Workpiece W
The gate voltage V represents the operating characteristics of the semiconductor.
The CV characteristic indicating the relationship between the capacitance and the capacitance C is often used. In such CV characteristics, hysteresis occurs when the gate voltage V is applied and released. If the hysteresis is high, the threshold voltage of the gate voltage (the voltage at which the semiconductor is turned on and the voltage at which the semiconductor is turned off) changes, and the reliability decreases.
It is preferable to suppress the hysteresis within a predetermined voltage (for example, within 0.02 V). This also applies to the laminated structure, but the hysteresis is increased due to defects (dangling bonds) in the silicon nitride film. To suppress the hysteresis to within 0.02 V, a defect in the silicon nitride film as shown by a dotted line in FIG. We have found that the density must be maintained and the defect density corresponds to about 250 ° C. or higher. Here, FIG. 5 is a temperature distribution of the defect concentration in the silicon nitride film, and a dotted line indicates an allowable defect density.

The controller 191 controls the temperature to about 450 ° C. for other CVD processes and at least 80 ° C. for etching processes. In any case, the temperature is set such that moisture as an impurity does not adhere to the target object W.

The cooling jacket 192 flows cooling water for cooling the workpiece W during the plasma processing. For the cooling jacket 192, a material such as stainless steel, which has a good thermal conductivity and is easy to process the flow path 193, is selected. The flow path 193 can be formed, for example, by vertically and horizontally penetrating a rectangular cooling jacket 192 and screwing a sealing member 194 such as a screw into a through hole. Of course, regardless of FIG. 2, each of the cooling jacket 192 and the flow path 193 can have an arbitrary shape. Other types of refrigerants (alcohol, galden, freon, etc.) instead of cooling water
Can of course be used. As the temperature sensor 196, a well-known sensor such as a PTC thermistor, an infrared sensor, and a thermocouple can be used. The temperature sensor 196 may or may not be connected to the flow path 193.

The heater device 198 is formed, for example, as a heater wire wound around a water pipe connected to the flow path 193 of the cooling jacket 192. By controlling the magnitude of the current flowing through the heater wire, the temperature of the water flowing through the flow path 193 of the cooling jacket 192 can be adjusted. Since the cooling jacket 192 has a high thermal conductivity, it can be controlled to a temperature substantially equal to the temperature of the water flowing through the flow path 193.

The susceptor 104 is configured to be able to move up and down in the processing chamber 102. The elevating system of the susceptor 104 includes an elevating member, a bellows, an elevating device, and the like, and any structure known in the art can be applied. The susceptor 104 is moved up and down, for example, between a home position and a process position by an elevating device. Susceptor 104
Is disposed at a home position when the plasma processing apparatus 100 is turned off or in a standby state. In the home position, the susceptor 104 transfers the workpiece W from the cluster tool 300 via the gate valve 101. The susceptor 104 has a gate valve 170
A delivery position may be set to communicate with. The elevating distance of the susceptor 104 can be controlled by a control device of an elevating device (not shown) or a control device of the plasma processing apparatus 100, and can be viewed from a viewport (not shown).

The susceptor 104 is generally connected to a lifter pin lifting system (not shown). The lifter pin elevating system includes an elevating member, a bellows, an elevating device, and the like, and any structure known in the art can be applied. The elevating member is made of, for example, aluminum and is connected to, for example, three vertically extending lifter pins arranged at the vertices of an equilateral triangle. The lifter pins can penetrate through the inside of the susceptor 104 and support the object W to be moved up and down on the susceptor 104. The lifting and lowering of the workpiece W
Is introduced into the processing chamber 102 from the cluster tool 300 and when the processed object W is led out to the cluster tool 300. The elevating device may be configured to allow the lifter pin to elevate and lower only when the susceptor 104 is at a predetermined position (for example, a home position). The lift distance of the lifter pin can be controlled by a control device of a lift device (not shown) or a control device of the plasma processing apparatus 100, and can be visually observed from a view port (not shown).

The susceptor 104 may have a baffle plate (or a current plate) if necessary. The baffle plate may move up and down together with the susceptor 104 or may be configured to engage with the susceptor 104 moved to the process position. The baffle plate separates the processing space in which the processing target W is present from the exhaust space below, and mainly secures the potential of the processing space (that is, secures microwaves in the processing space) and the degree of vacuum (for example, 50 mTorr). ) Is maintained. The baffle plate has, for example, a hollow disk shape made of pure aluminum. The baffle plate has, for example, a thickness of 2 mm and has a large number of holes with a diameter of about 2 mm at random (for example, an opening ratio of 50% or more). Alternatively, the baffle plate may have a mesh structure.
If necessary, the baffle plate may have a function of preventing backflow from the exhaust space to the processing space, or taking a pressure difference between the processing space and the exhaust space.

A high frequency power source for bias 282 and a matching box (matching circuit) 284 are connected to the susceptor 104, and constitute an ion plating together with the antenna member 120. The bias high-frequency power supply 282 supplies a negative DC bias (for example, 13.56 MHz) to the object W to be processed.
z high frequency). Matching box 28
Numeral 4 prevents the effects of electrode stray capacitance and stray inductance in the processing chamber 102. Matching box 2
84 can perform matching using, for example, variable capacitors arranged in parallel and in series with the load.
As a result, the ions are accelerated toward the object to be processed W by the bias voltage, and the processing by the ions is promoted. The ion energy is determined by the bias voltage,
The bias voltage can be controlled by high frequency power. The frequency applied by the power supply 283 is the slot electrode 200
It can be adjusted according to the slit 210 of.

A high vacuum pump 106 is provided inside the processing chamber 102.
Thus, a predetermined reduced pressure or a vacuum sealed space can be maintained. The high vacuum pump 106 uniformly evacuates the processing chamber 102 to keep the plasma density uniform, thereby preventing the plasma density from being partially concentrated and the processing depth of the processing target W from being partially changed. Although only one high vacuum pump 106 is provided at the end of the processing chamber 102 in FIG. 1, the position and number thereof are exemplary. High vacuum pump 106
Is constituted by, for example, a turbo molecular pump (TMP), and is connected to the processing chamber 102 via a pressure adjustment valve (not shown). Pressure regulating valves are well known in the art under the names of conductance valve, gate valve or high vacuum valve. The pressure regulating valve is closed when not in use, and increases the pressure in the processing chamber 102 during use by using the high vacuum pump 106.
It is opened so as to maintain a predetermined pressure (for example, 0.1 to several tens of mTorr) that is evacuated.

As shown in FIG. 1, according to the present embodiment, the high vacuum pump 106 is directly connected to the processing chamber 102. Here, “direct connection” means not through a pipe, and it does not matter that a pressure regulating valve is interposed.

A gas supply ring 1 made of a quartz pipe connected to a (reaction) gas supply system 130 is provided on a side wall of the processing chamber 102.
40 and a quartz pipe gas supply ring 170 connected to a (discharge) gas supply system 160.
The gas supply systems 130 and 160 include gas sources 131 and 16
1, valves 132 and 162, mass flow controllers 134 and 164, and gas supply paths 136 and 166 connecting them. Gas supply paths 136 and 166 are connected to gas supply rings 140 and 170.

For example, when depositing a silicon nitride film, the gas source 131 supplies a reactive gas (or material gas) such as NH ₃ or SiH ₄ gas, and the gas source 161 uses neon, xenon, argon, helium, or the like. A discharge gas such as one obtained by adding N ₂ and H ₂ to either radon or krypton is supplied. However, the gas is not limited to these, and Cl ₂ , HC
1, HF, BF ₃ , SiF ₃ , GeH ₃ , AsH ₃ , P
H ₃ , C ₂ H ₂ , C ₃ H ₈ , SF ₆ , Cl ₂ , CCl ₂ F ₂ , C
F ₄ , H ₂ S, CCl ₄ , BCl ₃ , PCl ₃ , SiCl ₄ C
O and the like can be widely applied.

The gas supply system 160 can be omitted by replacing the gas source 131 with a single gas source that supplies a mixed gas of the gas sources 131 and 161. The valves 132 and 162 are controlled so as to be opened at the time of the plasma processing of the processing target object W and to be closed during a period other than the plasma processing.

Mass flow controllers 134 and 164
Controls the gas flow, for example, has a bridge circuit, an amplification circuit, a comparator control circuit, a flow control valve, etc.
The flow rate is measured by detecting heat transfer from upstream to downstream accompanying the gas flow, and the flow control valve is controlled. However, any other structures known in the art can be applied to the mass flow controllers 134 and 164.

The gas supply paths 136 and 166 are, for example,
The use of a seamless pipe or the use of a bite joint or a metal gasket joint at the connection prevents contamination of the supply gas with impurities from the pipe. In order to prevent dust particles due to dirt and corrosion inside the pipe, the pipe is made of a corrosion-resistant material, or the inside of the pipe is made of PTFE (Teflon (registered trademark)), PFA, polyimide, PBI or other insulating material. It is insulated, subjected to electrolytic polishing, and further provided with a dust particle trapping filter.

As shown in FIG. 6, the gas supply ring 140
Has a ring-shaped housing or main body made of quartz, and has an inlet 141 connected to a gas supply passage 136, and an inlet 1
41, a plurality of gas supply nozzles 143 connected to the flow path 142, an outlet 144 connected to the flow path 142 and the gas discharge path 138,
2 and a mounting portion 145 for the second. Here, FIG. 6 is a plan view of the gas supply ring 140. FIG.

A plurality of gas supply nozzles 1 arranged uniformly
43 contributes to making a uniform flow of gas in the processing chamber 102. Of course, the gas introducing means of the present invention is not limited to this, and a radial flow method in which gas flows from the center to the periphery, and a shower head method described later in which a large number of small holes are provided in the opposed surface of the workpiece W to introduce gas. Can also be applied.

As will be described later, the gas supply ring 140 (the flow path 142 and the gas supply nozzle 143) of the present embodiment can be evacuated from the outlet 144 connected to the gas discharge path 138. Since the gas supply nozzle 143 has a diameter of only about 0.1 mm, even if the gas supply ring 140 is evacuated by the high vacuum pump 106 through the gas supply nozzle 143, water remaining inside the gas supply ring 140 cannot be effectively removed. . For this reason, the gas supply ring 140 of this embodiment makes it possible to effectively remove residues such as moisture in the flow path 142 and the gas supply nozzle 143 through the outlet 144 having a larger diameter than the nozzle 143. ing.

The gas supply nozzle 173 is also provided on the gas supply ring 170 in the same manner as the gas supply nozzle 143.
0 has the same configuration. Therefore, the gas supply ring 170 includes an inlet 171 (not shown), a flow path 172,
It has a plurality of gas supply nozzles 173, an outlet 174, and a mounting part 175. Like the gas supply ring 140,
The gas supply ring 170 (the flow path 172 thereof and the gas supply nozzle 173) of the present embodiment can be evacuated from the discharge port 174 connected to the gas discharge path 168. Gas supply nozzle 17
3 also has a diameter of about 0.1 mm, so that even if the gas supply ring 170 is evacuated by the high vacuum pump 106 via the gas supply nozzle 173, water remaining in the inside cannot be effectively removed. For this reason, the gas supply ring 170 of this embodiment is connected to the flow path 172 and the gas supply nozzle 173 through the discharge port 174 having a larger diameter than the nozzle 173.
It is possible to effectively remove residues such as moisture in the inside.

The vacuum pump 1 is connected to a multi-end of a gas discharge path 138 connected to the discharge port 144 of the gas supply ring 140.
52 is connected via a pressure adjusting valve 151.
Further, a vacuum pump 154 is connected via a pressure adjusting valve 153 to multiple ends of a gas discharge path 168 connected to a discharge port 174 of the gas supply ring 170. As the vacuum pumps 152 and 154, for example, a turbo molecular pump, a sputter ion pump, a getter pump, a sorption pump, a cryopump, or the like can be used.

The pressure regulating valves 151 and 153 are closed when the valves 132 and 162 are opened, and the opening and closing timing is controlled so as to be opened when the valves 132 and 162 are closed. As a result, during plasma processing when valves 132 and 162 are opened, vacuum pumps 152 and 154 are closed to ensure that gas is used for plasma processing. On the other hand, after the plasma processing is completed, the vacuum pumps 152 and 154 are opened during periods other than the plasma processing in which the valves 132 and 162 are closed, such as a period during which the workpiece W is introduced into the processing chamber 102 and a period during which the susceptor 104 is lifted and lowered. Is done. Thereby, the vacuum pumps 152 and 154
Exhausts the gas supply rings 140 and 170 to a degree of vacuum that is not affected by the residual gas. As a result, the vacuum pumps 152 and 154 prevent the gas supply nozzles 143 and 173 from being clogged in a non-uniform manner and prevent impurities such as moisture from entering the workpiece W in the subsequent plasma processing. This enables high-quality plasma processing to be performed on the workpiece W.

Alternatively, as shown in FIG. 7, a bypass line 182 connecting the outlet 144 of the gas supply ring 140 to the high vacuum pump 106 and an outlet 174 of the gas supply ring 170 are connected to the high vacuum pump 106. Alternatively, a bypass line 184 may be provided. Here, FIG. 7 shows that gas supply rings 140 and 170 have gas exhaust passages 138 and 16.
8 instead of connecting bypass lines 182 and 184
FIG. 3 is a schematic cross-sectional view showing a structure in which are connected. The bypass lines 182 and 184 are connected to the gas supply ring 14 through a well-known vacuum holding flange, gasket and valve 181.
0 can be connected. In addition, these bypass lines 1
82 and 184 may be connected.

Since the bypass lines 182 and 184 have a diameter of 25 mm to 40 mm larger than the gas supply nozzles 143 and 173 in this embodiment, the high vacuum pump 106 is more efficient than using the gas supply nozzles 143 and 173. Specifically, the gas supply rings 140 and 170 can be evacuated using the bypass lines 182 and 184. In the present embodiment, the bypass line 18
Although 2 and 184 are connected to the high vacuum pump 106, the present invention does not prevent connection to a roughing pump or another exhaust pump (not shown) of the processing chamber 102.

The microwave source 110 is made of, for example, a magnetron and can generate a microwave (for example, 5 kW) of usually 2.45 GHz. Microwave
Then, the transmission mode is set to TM, T by the mode converter 112.
It is converted to E or TEM mode. In FIG. 1, an isolator that absorbs a reflected wave of the generated microwave returning to the magnetron, an EH tuner or a stub tuner for matching with a load side are omitted.

The antenna member 120 includes a temperature control plate 122,
It has a storage member 123 and a dielectric plate 230. The temperature control plate 122 is connected to the temperature control device 121, and the storage member 123 stores the slow wave member 124 and the slot electrode 200 that contacts the slow wave member 124. Further, a dielectric plate 230 is arranged below the slot electrode 200. A material having high thermal conductivity (for example, stainless steel) is used for the storage member 123, and its temperature is set to be substantially the same as the temperature of the temperature control plate 122.

As the slow wave member 124, a predetermined material having a predetermined dielectric constant and a high thermal conductivity is selected to shorten the wavelength of the microwave. In order to make the density of the plasma introduced into the processing chamber 102 uniform, it is necessary to form many slits 210 in the slot electrode 200.
Reference numeral 4 has a function of enabling a large number of slits 210 to be formed in the slot electrode 200. As the slow wave material 124, for example, alumina ceramic, SiN, Al
N can be used. For example, AlN has a relative dielectric constant _{t t} of about 9, and a wavelength shortening rate n = 1 / (ε _t ) ^1/2 =
0.33. Accordingly, the speed of the microwave passing through the slow-wave member 124 becomes 0.33 times and the wavelength becomes 0.33 times, so that the interval between the slits 210 of the slot electrode 200 can be shortened, and more slits are formed. That makes it possible.

The slot electrode 200 is screwed to the slow wave member 124 and has a diameter of 50 cm and a thickness of 1 mm, for example.
It is composed of the following cylindrical copper plate. Slot electrode 200
Is a radial line slot antenna (RL) in the industry.
SA) (or an ultra-high efficiency planar antenna). However, the present invention does not exclude the application of other types of antennas (such as a single-layer waveguide planar antenna and a parallel plate slot array of a dielectric substrate). The slot electrode 200 includes a slot electrode 200a shown in FIG.
The slot electrode 200b shown in FIG. 10, the slot electrode 200c shown in FIG. 10, and the slot electrode 200d shown in FIG. 11 can be applied. 8 to 11 are plan views illustrating exemplary structures of the slot electrode applicable to FIG. Unless otherwise specified, reference numerals without alphabets in the following description are intended to collectively refer to reference numbers with alphabets.

The slot electrode 200 is formed by dividing a disk into a plurality of (virtual) regions having an equal area, and slits 212a and 214a which are slightly separated from each other in a substantially T-shape.
A set of 212b and 214b is arranged. In the slit electrode 200a shown in FIG. 8, each region has a hexagon, and the slit electrodes 200b to 2 shown in FIGS.
In 00d, each region has a square shape. The slit electrodes 200b and 200c are both T-shaped slits 210.
However, there is a difference in the dimensions and arrangement of the slit 210. The slit 210 of the slit electrode 200d has a V-shape.

The slot electrode 200 is provided with slits 210 so that the disk-shaped slit density is substantially constant, thereby preventing the dielectric plate 230 immediately below from being released and being mixed as impurities into the reaction gas. The prior art proposes a slot electrode 200 in which slits are arranged concentrically or spirally (spirally), but does not consider the slit density. For this reason, in the dielectric plate immediately below the slot electrode, the portion corresponding to the slit portion receives higher ion energy than the other portions, causing element desorption (release), which causes the problem described below. On the other hand, the slot electrode of the present embodiment provides a substantially uniform distribution of ion energy to the dielectric plate 230, so that the dielectric plate 230 can be prevented from being separated and high quality plasma processing can be achieved.

The length L1 of each of the slits 212 and 214 is set within a range of about 1/2 of the guide wavelength λ of the microwave to about 2.5 times the free space wavelength, and the width is set to about 1 mm. The distance L2 between the outer ring and the inner ring of the slit is set to be substantially the same as the guide wavelength λ although there is a slight adjustment. The length L1 of the slit is set within a range represented by the following equation. By forming the slits 212 and 214 in this manner, it is possible to form a uniform microwave distribution in the processing chamber 102.

[0048]

(Equation 1) Each slit 212a and 214a, 212b and 214
Although b is inclined at 45 degrees from the center, the shape is set to be larger as the distance from the center increases. For example, when the distance from the center is doubled, the size of the slits 212a and 214a, 212b and 214b is set to be 1.2 to 2 times.

The shape and arrangement of the slits 210 are not limited as long as the slit density on the disk can be kept substantially constant. In addition, the shape of each divided region is not limited. Therefore, each region may have the same shape or different shapes. Further, even in the case of having the same shape, the shape is not limited to a hexagon and a quadrangle, and an arbitrary shape such as a triangle can be adopted. However, in the present invention, the slit 210
Does not prevent a large number of concentric circles or spirals having irregular slit densities.

Optionally, in order to increase the antenna efficiency of the slot electrode 200, a microwave power reflection preventing radiation element having a width of about several mm may be formed along the periphery of the slot electrode 200. In addition, the pattern of the slit of the slot electrode 200 of the present embodiment is merely an example, and it goes without saying that an electrode having an arbitrary slit shape can be used as the slot electrode.

The temperature control device 121 has a function of controlling the temperature change of the storage member 123 and the components in the vicinity of the storage member 123 due to micro heat within a predetermined range. The temperature control device 121 connects a temperature sensor and a heater device (not shown) to the temperature control plate 122, and introduces cooling water or a refrigerant (alcohol, Galden, Freon, etc.) into the temperature control plate 122, and thereby controls the temperature control plate 122. The temperature is controlled to a predetermined temperature. The temperature control plate 122 has good thermal conductivity, such as stainless steel, for example.
A material that is easy to process inside a flow path through which cooling water or the like flows is selected. The temperature control plate 122 is in contact with the storage member 123, and the storage member 123 and the retardation member 124 have high thermal conductivity.
As a result, by controlling the temperature of the temperature control plate 122, it is possible to control the temperature of the slow wave member 124 and the temperature of the slot electrode 200. If there is no temperature control plate 122 or the like, the power of the microwave
(For example, 5 kW) for a long time,
The temperature of the electrode itself increases due to power loss at 24 and the slot electrode 200. As a result, the slow wave member 124 and the slot electrode 200 are thermally expanded and deformed.

For example, in the slot electrode 200, the optimum slit length changes due to thermal expansion, so that the entire plasma density in the processing chamber 102 is reduced or the plasma density is partially concentrated. If the overall plasma density decreases, the processing speed of the target object W changes. As a result, when the plasma processing is temporally controlled, and the processing is stopped after a predetermined time (for example, 2 minutes) has elapsed and the object to be processed W is taken out of the processing chamber 102, the entire plasma density is reduced. Is decreased, the desired processing depth (etching depth or film thickness) may not be formed on the workpiece W. Further, if the plasma density is partially concentrated, the processing depth of the processing target W is partially changed. If the slot electrode 200 is deformed due to a change in temperature, the quality of the plasma processing is reduced.

Further, if the temperature control plate 122 is not provided,
24 and the slot electrode 200 are made of different materials, and both are screwed, so that the slot electrode 200 warps. It will be understood that the quality of the plasma treatment is also reduced in this case.

The dielectric plate 230 is disposed between the slot electrode 200 and the processing chamber 102. Slot electrode 200
The dielectric plate 230 is firmly and confidentially joined by, for example, a brazing. Alternatively, a copper thin film is patterned on the back surface of the fired ceramic or aluminum nitride (AlN) dielectric plate 230 into a shape of the slot electrode 200 including the slit by means of screen printing or the like, and is baked. Like copper foil slot electrode 200
May be formed.

Note that the function of the temperature control plate 122 is
May be held. That is, the temperature of the dielectric plate 230 is controlled by integrally attaching a temperature control plate having a flow path around the side portion of the dielectric plate 230 to the dielectric plate 230, thereby controlling the slow wave member 124 and the slot electrode 200. can do. The dielectric plate 230 is fixed to the processing chamber 102 by, for example, O-ring. Therefore, alternatively, the temperature of the dielectric plate 230, and consequently, the temperature of the retardation member 124 and the slot electrode 200 may be controlled by controlling the temperature of the O-ring.

The dielectric plate 230 deforms the slot electrode 200 when the pressure of the processing chamber 102 in a reduced pressure or vacuum environment is applied to the slot electrode 200, or deforms the slot electrode 200.
Is prevented from being exposed to the processing chamber 102 and being sputtered or causing copper contamination. The dielectric plate 230, which is an insulator, allows microwaves to pass through the processing chamber 102. If necessary, dielectric plate 2
By forming the 30 from a material having a low thermal conductivity, the slot electrode 200 may be prevented from being affected by the temperature of the processing chamber 102.

In this embodiment, the thickness of the dielectric plate 230 is
30 which is greater than 0.5 times the wavelength of the microwave within 30
Less than 5 times, preferably from about 0.6 times to about 0.7
It is set to double the range. 2.45 GHz microwave has a wavelength of about 122.5 mm in vacuum. If the dielectric plate 230 is made of AlN, as described above, since the relative dielectric constant ε _t is about 9, the wavelength shortening rate n = 1 / (ε _t )
^1/2 = 0.33, and the wavelength of the microwave in the dielectric plate 230 is about 40.8 mm. Therefore, if the dielectric plate 230 is made of AlN, the thickness of the dielectric plate 230 is about 2
It is larger than 0.4 mm and smaller than about 30.6 mm, and is preferably set in the range of about 24.5 mm to about 28.6 mm. More generally, the thickness H of the dielectric plate 230 is
Using the wavelength λ of the microwave in the dielectric plate 230, 0.5
λ <H <0.75λ, more preferably 0.6λ
.Ltoreq.H.ltoreq.0.7.lambda. Here, the wavelength λ of the microwave in the dielectric plate 230 is the wavelength λ ₀ of the microwave in vacuum.
Λ = λ ₀ using the wavelength shortening rate n = 1 / (ε _t ) ^1/2
n is satisfied.

When the thickness of the dielectric plate 230 is 0.5 times the wavelength of the microwave in the dielectric plate 230, the standing wave is a forward wave toward the front surface of the dielectric plate 230 and a backward wave reflected from the back surface. The waves are combined, the reflection is maximized, and the transmission of microwaves to the processing chamber 102 is minimized, as shown in FIG. Therefore, in this case, the generation of plasma becomes insufficient, and a desired processing speed cannot be obtained. Here, FIG.
Is a graph showing the relationship between the thickness of the dielectric plate 230 and the transmitted power of microwaves.

On the other hand, the thickness of the dielectric plate 230 is
In the case of 0.75 times the wavelength of the microwave, the reflection is minimized and the transmitted power is maximized, but the ion energy in the plasma is also maximized as shown in FIG. The present inventors have discovered that element desorption (release) occurs from the dielectric plate 230 as shown in FIG. 13 depending on the ion energy in the plasma. Here, FIG.
7 is a graph showing a relationship between a thickness of 0 and an amount of element desorbed from a dielectric plate 230 (sputtering rate). Elemental desorption from the dielectric plate 230 becomes an impurity in the reaction gas and hinders high quality plasma processing.

Therefore, in the present invention, the dielectric plate 230 is used to achieve high-quality plasma processing while ensuring that microwaves pass through the processing chamber 102 to such an extent that a desired processing speed is obtained.
14, the thickness H of the dielectric plate 230 is set to 0.3λ to 0.4λ, 0.6λ to 0.7λ,... 0.3Nλ to 0.3Nλ + 0.1, as shown in FIG. (Where N is an integer). In other words, the dielectric plate 2
The thickness H of 30 is, as a general formula, 0.3λN ≦ H ≦ 0.3.
λN is satisfied. In the present embodiment, the range of 0.3λ to 0.4λ is not adopted in consideration of the mechanical strength depending on the material (for example, alumina) of the dielectric plate 230, but as long as the mechanical strength can be maintained ( This does not exclude such a range, for example, when the dielectric plate 230 is formed of quartz (a relative dielectric constant of 3.8). Further, the above-described general formula is not limited to microwaves, and can be applied to other waves widely used for plasma generation.

As described above, the gas supply systems 130 and 160 are provided with the nozzles 143 and 173 on the side wall of the processing chamber 102.
Is provided to supply the reaction gas and the discharge gas from the side, so that the gas traverses the upper surface of the workpiece W, or the nozzles 143 and 173 are provided at point-symmetric positions with respect to the center of the susceptor 104. However, there is a possibility that the gas density on the upper surface of the workpiece W is not uniform and a uniform plasma density cannot be secured. In order to solve this, it is conceivable to install a shower head structure made of a glass tube so as not to disturb the electric field above the susceptor 104. Hereinafter, such an embodiment will be described with reference to FIGS. Here, FIG. 15 is a schematic sectional view showing a modified example of the air supply / exhaust system shown in FIG.

The gas supply / exhaust system shown in FIG.
0 and a shower plate 250. Note that the dielectric plate 240 and the shower plate 250 may be considered as one dielectric. The dielectric plate 240 has a thickness of, for example, 30 mm, and has a plate shape made of aluminum nitride (AlN). The shower plate 250 is attached below the dielectric plate 250. The dielectric plate 240 defines an inlet 241, a flow path 242, and an outlet 244.

The supply port 136 of the gas supply system 130 is connected to the inlet 241. The gas outlet 138 is connected to the outlet 244. The dielectric plate 24 shown in FIG.
Although 0 is applied only to the gas supply system 130, the supply path of the mixed gas of the gas sources 131 and 161 may be replaced with a supply path 136 shown in FIG. Alternatively, the dielectric plate 24
0 is connected to a pair of gas supply passages 136 (not shown) preferably arranged symmetrically with respect to the center of the dielectric plate 240. The pair is the nozzle 252 of the shower plate 250.
This is for introducing the reaction gas into the processing chamber 102 with a uniform density from the ejection member 260 attached to the processing chamber 102. Needless to say, the position and number of the gas introduction ports provided in the dielectric plate 240 are not limited. In addition, a pair of inlets 24
1, one may be connected to the gas supply path 136 and the other may be connected to the gas supply path 166.

Alternatively, the gas supply system 160 is
2 may be connected in the same manner as in FIG. Because
Since a discharge gas such as argon is less likely to be decomposed than a reaction gas such as silane or methane, even if introduced into the processing chamber 102 from the side of the processing chamber 102, it does not bring about a non-uniform plasma density as much as the reaction gas. is there. The operation and effect of the vacuum pump 152 connected to the dielectric plate 240 are the same as those described above, and thus the description will be omitted. The bypass lines 182 and 184 may be connected instead of the vacuum pump 152 as in the above-described embodiment described with reference to FIG.

Next, details of the shower plate 250 shown in FIG. 15 will be described with reference to FIGS. Here, FIG. 16 shows the nozzle 252 of the shower plate 250 shown in FIG.
It is an expanded sectional view of. As shown in FIG.
Numeral 0 has a cylindrical concave portion 246 above the nozzle 252 of the shower plate 250.

The shower plate 250 is, for example, 6 mm thick.
And made of AlN. The shower plate 250 includes a plurality of (for example, 10
Or more (20, 40, etc.) nozzles 253 are formed. As shown in FIG. 16, an ejection member 260 is attached to each nozzle 253. The ejection member 260
It consists of a screw (262 and 264) and a nut 266.

The ejection member 260 may be selectively or entirely and partly integrally formed with the shower member 250, and its shape is not limited. For example, the ejection member 260
As shown in FIGS. 17 to 19, the flow paths 352a to 352
2c and ejection member 3 having ejection ports 354a to 354c
It may be replaced by 50a to 350c. Here, FIG.
7 to 19 are schematic sectional views showing the structure of a modified example of the ejection member 260 shown in FIG.

The screw has a screw head 262 and a screw body 264.
It is composed of The screw head 262 has a height of about 2 mm, and a pair of injection flow paths 269 are formed inside the screw head 262 at an angle of ± 45 degrees with respect to the lower surface 256 of the shower plate 250. Each injection flow path 269 is branched from a flow path 268 described later, and has a diameter of, for example, 0.1 mm. The injection channel 269 is inclined in this way to achieve a uniform injection of the reaction gas, and the angle and number thereof are not limited as long as this purpose is achieved.

According to the experiment conducted by the present inventors, the shower plate 2
One injection flow path 269 set at 90 degrees (ie, perpendicularly) to the lower surface 256 of 50 did not achieve a uniform injection in the processing chamber 102, and thus was inclined as shown in FIG. Is preferred. The flow path 268 has, for example, a diameter of 1 mm, and has a gap (flow path) 24 formed between the lower surface 241 of the dielectric plate 240 and the shower plate 250.
2 are connected. The nut 266 is connected to the screw body 264.
And is housed in the concave portion 246 of the dielectric plate 240.

The channel 242 is preferably a thin space for suppressing generation of plasma. The thickness required to suppress the generation of plasma changes depending on the pressure. For example, under a pressure of 10 Torr, the thickness is set to about 0.5 mm. In this case, the processing chamber 10 under the shower plate 250
The processing space of No. 2 is set to about 50 mTorr. Thus, the pressure difference is provided between the flow path 242 and the processing space, and the reaction gas is introduced at a predetermined speed.

According to the shower plate 250 of this embodiment, the reaction gas is introduced into the processing space uniformly and with good flow control without generating plasma in the flow path 242. The flow rate can be controlled by the pressure difference between the gap 242 and the processing space, the number, angle, size, and the like of the injection flow paths 269. For example, it is conceivable to fill the nozzle 253 and inject the reaction gas through the surface of the filling. However, in such a structure, it is difficult to control the distance between the filling and the nozzle, and the filling is completely removed or the filling completely blocks the nozzle, so that accurate flow rate control is difficult. Therefore, the shower plate 250 of the present embodiment is superior to such a structure.

Next, the cluster tool 300 of this embodiment
Will be described with reference to FIG. Here, FIG.
FIG. 2 is a schematic plan view showing a structure of a cluster tool 300 connectable to the plasma processing apparatus 100 shown in FIG.
As described above, the temperature of the object W is controlled by the susceptor 10.
4 (hereinafter, susceptor 1
04 is intended to summarize other modified examples of the susceptor unless otherwise specified). However, it takes time, inconvenient, and uneconomical to heat the workpiece W from room temperature to about 250 ° C. to about 350 ° C. by the susceptor 104 in the stacked film forming process. Therefore, the cluster tool 300 according to the present embodiment is intended to heat the workpiece W before introducing the workpiece W into the processing chamber 102 to achieve a quick start of the process. Similarly, it takes time to return the temperature from about 250 ° C. to about 350 ° C. to room temperature after the process is completed.
The reference numeral 0 indicates that the target object W is cooled after the target object W is drawn out of the processing chamber 102 so that the next process (eg, ion implantation or etching) can be quickly started.

As shown schematically in FIG. 20, the cluster tool 300 of the present invention comprises a transport section 320, a pre-heating section 340, a pre-cooling section 360, and other load lock (L / L) chambers 380. have. In FIG. 20, two processing chambers 102A, 10A,
2B is shown, but the number can be changed to a desired number. The pre-heating unit 340 and the pre-cooling unit 360 are formed in a load lock chamber (a vacuum chamber that enables the processing object to be taken in and out without opening the processing chamber during standby).

The transfer section 320 includes a transfer arm for supporting the workpiece W and a rotating mechanism for rotating the transfer arm. The pre-heating unit 340 includes a heater such as a lamp, and the processing target W is placed in one of the processing chambers 102A or 102B.
It is heated to near the processing temperature before being introduced into the process.
The pre-cooling unit 340 has a cooling chamber cooled by a refrigerant before transporting the workpiece W introduced from the processing chamber 102A or 102B to the next-stage apparatus (such as an ion implantation apparatus or an etcher). To room temperature. Preferably, the cluster tool 300 further includes a rotation angle detection sensor (not shown), a temperature sensor, one or more control units, and a memory storing a control program to control the rotation of the transport unit 320. The temperature of the pre-heating unit 340 and the pre-cooling unit 360 is controlled. Since any known sensor, control method, and control program can be applied to the sensor, the control method, and the control program, detailed description thereof is omitted here. Further, the control unit may be also used as a control unit (not shown) of the plasma processing apparatus 100. The transfer arm of the transfer unit 320 introduces the workpiece W into the processing chamber 102 via the gate valve 101 shown in FIG.

Next, the operation of the microwave plasma processing apparatus 100 of the present embodiment configured as described above will be described. First, the transfer arm of the transfer unit 320 illustrated in FIG. 20 introduces the workpiece W into the processing chamber 102. Here, in the processing chamber 102 (either the processing chamber 102A or 102B in FIG. 20; hereinafter, the “processing chamber 102” is a general term), it is assumed that the object to be processed is subjected to plasma CVD processing. Before the control unit (not shown) of the cluster tool 300 introduces the processing target W into the processing chamber 102, the processing target W is heated to, for example, around 300 ° C.
A command is sent to the transport unit 320 to transport the workpiece W to the preheating unit 340.

For example, the cluster tool 300 forms a silicon oxide film on a silicon substrate by plasma processing in the processing chamber 102A, and introduces nitrogen into the silicon substrate on which the silicon oxide film is formed in the processing chamber 102B to form the silicon oxide film. The surface can be plasma-treated to form a silicon nitride film. The reaction gas system for the plasma silicon oxide film in the processing chamber 102A is typically SiH ₄ —N ₂
O-based but TEOS (tetra) instead of SiH ₄
ethylthosilicate), TMCTS
(Tetramethylcyclotetrasil
oxane), DADBS (diacetoxydit)
ertiary butoxysilane) or the like may be used. The reaction gas system for plasma surface nitridation in the processing chamber 102B is typically a SiH ₄ —NH ₃ system, but it is also possible to use Si ₂ F ₆ , NF ₃ , SiF ₄ instead of SiH _4. it can.

In response to this, the transport section 320 introduces the workpiece W into the preheating section 340 and heats it. When the temperature sensor (not shown) of the cluster tool 300 detects that the temperature of the workpiece W has been overheated to around 300 ° C., the control unit (not shown) of the cluster tool 300 sends the processing object to the transport unit 172 in response to the detection result. The body W is drawn out from the preheating unit 340 and is moved from the gate valve 101 to the processing chamber 10.
Introduce to 2. When the transport arm of the transport unit 320 supporting the workpiece W arrives at the upper part of the susceptor 104, the lifter pin lifting / lowering system projects (eg, three) lifter pins (not shown) from the susceptor 104 to support the workpiece W. . As a result, the support of the object to be processed W shifts from the transfer arm to the lifter pin, and the transfer unit 320 returns the transfer arm from the gate valve 101. Thereafter, the gate valve 101 is closed. The transfer unit 320 may then move the transfer arm to a home position (not shown).

On the other hand, the lifter pin lifting / lowering system returns the lifter pins (not shown) into the susceptor 104, thereby disposing the workpiece W at a predetermined position on the susceptor 104. The bellows (not shown) maintain the reduced pressure environment of the processing chamber 102 during the elevating operation and prevent the atmosphere in the processing chamber 102 from flowing out. The susceptor 104 then
The object to be processed W is heated to 300 ° C.
Since the pre-heating is preheated, the time until the process preparation is completed is short. More specifically, the control device 1 shown in FIG.
91 controls the heater device 198 to bring the temperature of the susceptor 104 to 300 ° C.

Next, the high vacuum pump 106 increases the pressure in the processing chamber 102 through a pressure adjusting valve (not shown), for example,
Maintain at 50 mTorr. 1, the valves 151 and 153 are opened, and the vacuum pumps 152 and 154 exhaust the gas supply rings 140 and 170. Alternatively, valve 181 shown in FIG. 7 is opened and high vacuum pump 106 evacuates gas supply rings 140 and 170 via bias lines 182 and 184. As a result, moisture remaining in the gas supply rings 140 and 170 can be sufficiently exhausted.

Further, the susceptor lifting / lowering system moves the susceptor 104 and the workpiece W from the home position to a preset process position. The bellows (not shown) maintain the reduced pressure environment of the processing chamber 102 during the elevating operation and prevent the atmosphere in the processing chamber 102 from flowing out. Thereafter, the valves 151 and 153 shown in FIG. 1 or the valve 181 shown in FIG. 7 are closed.

Next, the valves 132 and 162 are opened, and the reaction gas is introduced into the processing chamber 102 from the gas supply rings 140 and 170 via the mass flow controllers 134 and 164, respectively. Since the valves 151 and 153 shown in FIG. 1 or the valve 181 shown in FIG. 7 are closed, the vacuum pumps 152 and 154 or 106 prevent the gas from the gas supply systems 130 and 160 from being introduced into the processing chamber 102. There is no.

When the shower plate 250 shown in FIG. 15 is used, a predetermined processing pressure, for example, 5
Maintain at 0 mTorr and lead to inlet 2 from gas supply path 136.
For example, one or more reaction gases obtained by further mixing NH ₃ into a mixed gas of helium, nitrogen and hydrogen are introduced into the dielectric plate 240 through the interface 41. Thereafter, the gas is introduced into the processing chamber 102 from the recess 246 through the gap 242 shown in FIG. 16, through the flow paths 268 and 269 of the ejection member 260.
The gas is introduced into the processing chamber 102 at a stable and uniform density with good flow rate control without being converted into plasma in the void 242.

The temperature of the processing space of the processing chamber 102 is 300 ° C.
It is adjusted by the degree. On the other hand, the microwave from the microwave source 110 is supplied to the slow wave material 124 of the antenna member 120 via a rectangular waveguide or a coaxial waveguide (not shown).
, For example, in a TEM mode. Slow wave material 12
4 passes through the slot electrode 200 after its wavelength is shortened, and the microwave passes through the slit 210.
2 through a dielectric plate 230. Since the temperature of the slow wave member 124 and the slot electrode 200 are controlled, there is no deformation due to thermal expansion or the like, and the slot electrode 200 can maintain an optimal slit length. This allows the microwaves to be introduced into the processing chamber 102 uniformly (i.e., without partial concentration) and at the desired overall density (i.e., without loss of density).

Thereafter, a microwave is used to convert the reaction gas into plasma to perform a lamination film forming process. If a baffle plate is used, the baffle plate maintains the potential and vacuum of the processing space to prevent microwaves from escaping from the processing space.
Thereby, a desired process speed can be maintained.

When the temperature of the susceptor 104 becomes higher than the desired set temperature due to the continuous use, the controller 191 cools the susceptor 104. Similarly, when the temperature of the susceptor 104 becomes lower than the set temperature at the start of processing or due to overcooling, the control device 191 heats the susceptor 104.

The film forming process is performed for a predetermined time (for example, about 2 minutes) set beforehand, and then the object W is moved out of the processing chamber 102 from the gate valve 101 in the reverse order to the above. It is derived by the transport unit 320 of the cluster tool 300. At the time of derivation, a lifting device (not shown) returns the susceptor 104 and the workpiece W to the connection position with the transport unit 320. Here, “about 2 minutes” is because the plasma CVD processing time generally required for forming the laminated nitride film is used. For example, even if the temperature controller 190 sets the temperature at about 250 ° C. to about 350 ° C., the long-term
This is because the same problem as when the temperature is set to 0 ° C. or more may be caused. Further, if the time is short, the semiconductor generated from the object W may not be able to effectively prevent the leak current.

Since a microwave having a desired density is uniformly supplied to the processing chamber 102, a silicon oxide film and a silicon nitride film are formed on the object to be processed W with a predetermined thickness. Further, since the temperature of the processing chamber 102 is maintained at a temperature at which moisture or the like does not enter the wafer W, desired film formation quality can be maintained. An object to be processed W derived from the processing chamber 102
First, the preliminary cooling unit 360 is introduced and cooled to room temperature in a short time. Next, if necessary, the transport unit 320
The object to be processed W is transported to the next stage ion implantation apparatus or the like.

Although the preferred embodiments of the present invention have been described above, the present invention can be variously modified and changed within the scope of the invention. For example, since the microwave plasma processing apparatus 100 of the present invention does not prevent the use of electron cyclotron resonance, it may include a coil for generating a predetermined magnetic field. Although the microwave plasma processing apparatus 100 of the present embodiment is described as a plasma CVD apparatus, the microwave plasma processing apparatus 100
Needless to say, it can also be used for etching or cleaning. Further, the present invention does not prevent application to a parallel plate type plasma device using a glow discharge as well as the RLSA type plasma device.

[0089]

According to the plasma processing apparatus, the plasma generation introducing member, and the slot electrode, which are exemplary embodiments of the present invention, the slit density maintained at a constant value can be passed through the slit without lowering the yield of the object to be processed. The concentration of the ion energy of the generated wave can be prevented, and the dielectric plate can be prevented from separating. Further, the slit density maintained constant enables generation of a uniform plasma density. As a result, the plasma processing apparatus, the plasma generation introduction member, and the slot electrode, which are one exemplary embodiment of the present invention, can perform high-quality plasma processing on a target object.

[Brief description of the drawings]

FIG. 1 is a schematic block diagram illustrating a structure of a microwave plasma processing apparatus as an exemplary embodiment of the present embodiment.

FIG. 2 is a block diagram showing a more detailed structure of a temperature adjusting device of the plasma processing apparatus shown in FIG.

3 is a graph showing a nitrogen distribution in a depth direction when a stacked structure is formed on a workpiece W at a high temperature by the plasma processing apparatus shown in FIG.

4 is a graph showing a nitrogen distribution in a depth direction when a stacked structure is formed on a workpiece W at an appropriate temperature by the plasma processing apparatus shown in FIG.

FIG. 5 is a temperature distribution of a defect concentration in a silicon nitride film.

6 is a plan view of a gas supply ring applicable to the plasma processing apparatus shown in FIG.

FIG. 7 is a schematic sectional view showing a modification of FIG.

8 is a plan view showing an exemplary structure applicable to the slot electrode of the plasma processing apparatus shown in FIG.

9 is a plan view showing another exemplary structure applicable to the slot electrode of the plasma processing apparatus shown in FIG.

FIG. 10 is a plan view showing still another exemplary structure applicable to the slot electrode of the plasma processing apparatus shown in FIG. 1;

11 is a plan view showing another exemplary structure applicable to the slot electrode of the plasma processing apparatus shown in FIG. 1;

12 is a graph showing the relationship between the thickness of a dielectric plate of the plasma processing apparatus shown in FIG. 1 and the transmitted power of microwaves.

13 is a graph showing the relationship between the thickness of a dielectric plate and the amount of element desorption (sputtering rate) from the dielectric plate of the plasma processing apparatus shown in FIG.

14 is an enlarged sectional view of the vicinity of a nozzle of the shower plate shown in FIG.

FIG. 15 is a schematic sectional view showing a modification of the supply / exhaust system shown in FIG.

16 is an enlarged sectional view of the vicinity of a nozzle of a shower plate of the supply / exhaust system shown in FIG.

FIG. 17 is a schematic cross-sectional view showing a structure of a modification of the ejection member attached to the shower plate shown in FIG.

FIG. 18 is a schematic sectional view showing the structure of another modification of the ejection member attached to the shower plate shown in FIG.

FIG. 19 is a schematic sectional view showing the structure of another modification of the ejection member attached to the shower plate shown in FIG.

20 is a schematic plan view showing the structure of a cluster tool connectable to the plasma processing apparatus shown in FIG.

[Explanation of symbols]

 REFERENCE SIGNS LIST 100 plasma processing apparatus 102 processing chamber 102A processing chamber 102B processing chamber 104 susceptor 106 high vacuum pump 110 microwave source 120 antenna member 130 (reaction) gas supply system 140 gas supply ring 151 valve 152 vacuum pump 153 valve 154 vacuum pump 160 (discharge) Gas supply system 170 Gas supply ring 182 Bypass line 184 Bypass line 190 Temperature controller 191 Controller 192 Cooling jacket 198 Heater device 200 Slot electrode 230 Dielectric plate 300 Cluster tool

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4G075 AA24 BC04 BC06 CA02 CA47 CA65 DA01 EB01 EB42 EC21 FC15 4K030 AA06 BA40 CA04 CA17 FA02 GA02 KA20 KA23 KA30 KA41 5F004 AA16 BA20 BB13 BB14 BC02 BC06 DA01 DA11 DA06 DA20 DA22 DA23 DA24 DA25 DA29 5F045 AA09 AB33 AC01 AC12 AC15 AC16 AC17 AD06 AD07 AD08 AE17 AF07 BB14 CB01 DC55 DQ10 EB02 EH04 EJ02 EJ09 EK01 EN04

Claims (9)

[Claims] 1. A slot electrode having a slit for guiding a wave of a power supply frequency required for plasma processing in a processing chamber for performing plasma processing on an object to be processed. A slot electrode comprising a T-shaped or V-shaped set, which is divided into rectangular regions and the slits are arranged in each region, and the slits are inclined at approximately 45 degrees when viewed from the center of the slot electrode. 2. The polygon region according to claim 1, wherein the polygon region is a hexagon.
The slot electrode as described. 3. The polygonal area according to claim 1, wherein said polygonal area is a quadrangle.
The slot electrode as described. 4. The slot electrode according to claim 1, wherein said slot electrode is a radial line slot antenna. 5. The slot electrode according to claim 1, wherein a size of the slit is proportional to a distance from a center of the slot electrode. 6. A plasma generation / introduction member connected to a processing chamber for performing plasma processing on an object to be processed, comprising: a slot electrode having a slit for guiding a wave of a power supply frequency required for the plasma processing; The slot electrode is divided into a plurality of polygonal areas having an equal area, and the slits are arranged in each area, and the slits are T-shaped or V-shaped sets that are inclined at approximately 45 degrees from the center of the slot electrode. And a dielectric plate connected to the slot electrode to maintain an atmosphere in the processing chamber and allow the wave to pass therethrough. 7. The plasma generation introducing member according to claim 6, wherein said slot electrode is a radial line slot antenna. 8. A processing chamber for performing plasma processing on an object to be processed, and a slot electrode having a slit for guiding a wave of a power supply frequency required for the plasma processing, wherein the slot electrode has a plurality of uniform areas. A slot electrode formed of a set of a T-shape or a V-shape, which is divided into polygonal areas and arranged in each area, wherein the slits are inclined at approximately 45 degrees from the center of the slot electrode; A plasma processing apparatus comprising: a dielectric plate disposed between the chamber and the slot electrode to maintain an atmosphere of the processing chamber and allow the wave to pass through the processing chamber. 9. The plasma processing apparatus according to claim 8, wherein said slot electrode is a radial line slot antenna.