JPH02263799A - Base plate heating device and its operation - Google Patents

Base plate heating device and its operation

Info

Publication number
JPH02263799A
JPH02263799A JP8556389A JP8556389A JPH02263799A JP H02263799 A JPH02263799 A JP H02263799A JP 8556389 A JP8556389 A JP 8556389A JP 8556389 A JP8556389 A JP 8556389A JP H02263799 A JPH02263799 A JP H02263799A
Authority
JP
Japan
Prior art keywords
base plate
sample chamber
plasma
film
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8556389A
Inventor
Junichi Sakamoto
Original Assignee
Sumitomo Metal Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Ind Ltd filed Critical Sumitomo Metal Ind Ltd
Priority to JP8556389A priority Critical patent/JPH02263799A/en
Publication of JPH02263799A publication Critical patent/JPH02263799A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To prevent epitaxial film from pollution by heating the base plate to be treated in a 1st vacuum vessel evacuated in Vacuo under the radiation of infrared rays through an infrared ray transmissive window emitted from the infrared ray source in a 2nd vacuum vessel evacuated in Vacuo.
CONSTITUTION: Microwave is supplied from a microwave guide 2 into a plasma generating chamber 1 to generate argon plasma. The plasma is drawn out through a plasma drawing-out window 1b into a sample chamber 3 by the divergent magnetic field which is formed by an exciting coil 4, and is processed to the inside of the sample chamber 3 to irradiate the base plate S for about ≥3 minutes to carry out etching treatment for removing a natural oxidation film on the surface of the base plate S. Then, gaseous monosilane and gaseous hydrogen are blown at specific flow rates into the sample chamber 3 from a film-forming raw gas-supply system, and the pressure of the sample chamber 3 is set by adjusting the opening of a conductance valve in the inlet side of a turbomolecular pump 6c to epitaxially grow silicon single crystal film on the surface of the base plate S. After the growth is finished, the heating of base plate is stopped, and the base plate S is taken out to the outside of the device through loadlock chamber 7.
COPYRIGHT: (C)1990,JPO&Japio
JP8556389A 1989-04-03 1989-04-03 Base plate heating device and its operation Pending JPH02263799A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8556389A JPH02263799A (en) 1989-04-03 1989-04-03 Base plate heating device and its operation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8556389A JPH02263799A (en) 1989-04-03 1989-04-03 Base plate heating device and its operation

Publications (1)

Publication Number Publication Date
JPH02263799A true JPH02263799A (en) 1990-10-26

Family

ID=13862281

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8556389A Pending JPH02263799A (en) 1989-04-03 1989-04-03 Base plate heating device and its operation

Country Status (1)

Country Link
JP (1) JPH02263799A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5648276A (en) * 1993-05-27 1997-07-15 Sony Corporation Method and apparatus for fabricating a thin film semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5648276A (en) * 1993-05-27 1997-07-15 Sony Corporation Method and apparatus for fabricating a thin film semiconductor device

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