JPH0131314B2 - - Google Patents

Info

Publication number
JPH0131314B2
JPH0131314B2 JP58143896A JP14389683A JPH0131314B2 JP H0131314 B2 JPH0131314 B2 JP H0131314B2 JP 58143896 A JP58143896 A JP 58143896A JP 14389683 A JP14389683 A JP 14389683A JP H0131314 B2 JPH0131314 B2 JP H0131314B2
Authority
JP
Japan
Prior art keywords
channel layer
channel
source
semiconductor layer
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58143896A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6035577A (ja
Inventor
Takao Uchiumi
Itsuo Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP58143896A priority Critical patent/JPS6035577A/ja
Publication of JPS6035577A publication Critical patent/JPS6035577A/ja
Publication of JPH0131314B2 publication Critical patent/JPH0131314B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP58143896A 1983-08-08 1983-08-08 電界効果型トランジスタ Granted JPS6035577A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58143896A JPS6035577A (ja) 1983-08-08 1983-08-08 電界効果型トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58143896A JPS6035577A (ja) 1983-08-08 1983-08-08 電界効果型トランジスタ

Publications (2)

Publication Number Publication Date
JPS6035577A JPS6035577A (ja) 1985-02-23
JPH0131314B2 true JPH0131314B2 (en:Method) 1989-06-26

Family

ID=15349568

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58143896A Granted JPS6035577A (ja) 1983-08-08 1983-08-08 電界効果型トランジスタ

Country Status (1)

Country Link
JP (1) JPS6035577A (en:Method)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH088350B2 (ja) * 1985-04-08 1996-01-29 日本電気株式会社 半導体装置
US5111255A (en) * 1990-06-05 1992-05-05 At&T Bell Laboratories Buried channel heterojunction field effect transistor
US5369043A (en) * 1992-12-25 1994-11-29 Nippon Telegraph And Telephone Corporation Semiconductor circuit device and method for production thereof

Also Published As

Publication number Publication date
JPS6035577A (ja) 1985-02-23

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