JPH01276915A - Logic circuit - Google Patents

Logic circuit

Info

Publication number
JPH01276915A
JPH01276915A JP63106118A JP10611888A JPH01276915A JP H01276915 A JPH01276915 A JP H01276915A JP 63106118 A JP63106118 A JP 63106118A JP 10611888 A JP10611888 A JP 10611888A JP H01276915 A JPH01276915 A JP H01276915A
Authority
JP
Japan
Prior art keywords
input terminal
channel mos
inverter
mos transistor
turned
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63106118A
Other languages
Japanese (ja)
Inventor
Yasushi Wakayama
康司 若山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP63106118A priority Critical patent/JPH01276915A/en
Publication of JPH01276915A publication Critical patent/JPH01276915A/en
Pending legal-status Critical Current

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  • Dram (AREA)

Abstract

PURPOSE:To decrease number of transistors(TR) and to reduce the chip area by connecting a 1st input terminal to a gate electrode of a P-channel MOS TR, connecting a source electrode of the P-channel MOS TR to a positive power supply and connecting a drain electrode of the P-channel MOS TR to the input terminal of a 1st inverter. CONSTITUTION:With the 1st input terminal 1 set to logical 1 and a 2nd input terminal set to logical 0, the P-channel MOS TR 3 is turned off and the N- channel MOS TR 4 is turned off. Thus, the preceding state is maintained by the action of the 1st inverter 5 and a 2nd inverter 6 and the value is outputted at an output terminal 7. With the 1st input terminal 1 set to logical 0 and the 2nd input terminal set to logical 1, since the P-channel MOS TR 3 is turned on and the N-channel MOS TR 4 is turned on, the input is inhibited. Thus, the same function as the SR flip-flop is realized. Thus, number of TRs is decreased and the chip area is reduced.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体集積回路で実現された論理回路に関する
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a logic circuit realized with a semiconductor integrated circuit.

〔従来の技術〕[Conventional technology]

従来の半導体集積回路における論理回路の一実繕例を示
す回路図を第2図に示す、これは、一般にSR型ラフリ
ップフロップ呼ばれているが、第2図に示すように第1
の入力端子1を第1の2人力NOR回路8の入力端子8
aに接続し、第1の2人力NOR回路8の出力端子11
を出力端子12と第2の2人力NOR回路9の入力端子
9aに接続し、第2の入力端子2を第2の2人力NOR
回路9の入力端子9bに接続し、第2の2人力NOR回
路9の出力端子10を第1゛の2人力NOR回路8の入
力端子8bに接続して構成されていた。
FIG. 2 shows a circuit diagram showing an example of a logic circuit in a conventional semiconductor integrated circuit.This is generally called an SR type rough flip-flop, but as shown in FIG.
input terminal 1 of the input terminal 8 of the first two-person NOR circuit 8
a, and the output terminal 11 of the first two-power NOR circuit 8
is connected to the output terminal 12 and the input terminal 9a of the second two-manpower NOR circuit 9, and the second input terminal 2 is connected to the second two-manpower NOR circuit 9.
It was connected to the input terminal 9b of the circuit 9, and the output terminal 10 of the second two-manpower NOR circuit 9 was connected to the input terminal 8b of the first two-manpower NOR circuit 8.

上記の論理回路は、第1の入力端子1が論理値で1″で
、第2の入力端子2が論理値で“O”のときは、出力端
子12が論理値で“0”となり、第1の入力端子1が論
理値で“0”で、第2の入力端子2が論理値で“1″の
ときは、出力端子12が論理値“1nとなり、第1の入
力端子1が論理値で“0”で、第2の入力端子2が論理
値で“0″のときは、出力端子12は前の状態を保持し
、第1の入力端子1が論理値で“1”で、第2の入力端
子2が論理値で“1”となるように入力することは、禁
止するようになっていた。
In the above logic circuit, when the first input terminal 1 has a logical value of 1" and the second input terminal 2 has a logical value of "O", the output terminal 12 has a logical value of "0", and the second input terminal 2 has a logical value of "0". When the input terminal 1 of the first input terminal 1 has a logical value of "0" and the second input terminal 2 has a logical value of "1", the output terminal 12 has a logical value of "1n", and the first input terminal 1 has a logical value of "1". is "0" and the second input terminal 2 has a logical value of "0", the output terminal 12 maintains the previous state, and the first input terminal 1 has a logical value of "1" and the It was prohibited to input an input so that the input terminal 2 of No. 2 would have a logical value of "1".

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来の論理回路は2人力NOR回路を2個用い
ているため、トランジスタ数が多くチ・ノブ面積が大き
くなるという欠点がある。
Since the above-mentioned conventional logic circuit uses two two-way NOR circuits, it has the disadvantage that the number of transistors is large and the chi-knob area becomes large.

本発明の目的は前記課題を解決した論理回路を提供する
ことにある。
An object of the present invention is to provide a logic circuit that solves the above problems.

〔課題を解決するための手段〕[Means to solve the problem]

上記目的を達成するため、本発明の論理回路は、第1の
入力端子をPチャンネル型MOSトランジスタのゲート
電極に接続し、該Pチャンネル型MOSトランジスタの
ソース電極を正電源に接続し、該Pチャンネル型MOS
トランジスタのドレイン電極を第1のインバータの入力
端子に接続し、第2の入力端子をNチャンネル型MO3
)ランジスタのゲート電極に接続し、該Nチャンネル型
MOSトランジスタのソース電極を負電源に接続し、該
Nチャンネル型MOSトランジスタのドレイン電極を該
第1のインバータの入力端子に接続し、該第1のインバ
ータの出力端子を出力端子と第2のインバータの入力端
子に接続し、該第2のインバータの出力端子を該第1の
インバータの入力端子に接続して構成したものである。
In order to achieve the above object, the logic circuit of the present invention connects a first input terminal to a gate electrode of a P-channel MOS transistor, connects a source electrode of the P-channel MOS transistor to a positive power supply, and connects a first input terminal to a gate electrode of a P-channel MOS transistor. Channel type MOS
The drain electrode of the transistor is connected to the input terminal of the first inverter, and the second input terminal is connected to the N-channel type MO3
) connected to the gate electrode of the transistor, the source electrode of the N-channel MOS transistor connected to a negative power supply, the drain electrode of the N-channel MOS transistor connected to the input terminal of the first inverter; The output terminal of the inverter is connected to the output terminal and the input terminal of the second inverter, and the output terminal of the second inverter is connected to the input terminal of the first inverter.

〔実施例〕〔Example〕

次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第1図は本発明の一実施例を示すブロック図である。FIG. 1 is a block diagram showing one embodiment of the present invention.

図において、本発明の論理回路は、第1の入力端子1を
Pチャンネル型MOSトランジスタ3のゲート電極に接
続し、Pチャンネル型MOSトランジスタ3のソース電
極を正電源に接続し、Pチャンネル型MoSトランジス
タ3のドレイン電極を第1のインバータ5の入力端子に
接続し、第2の入力端子をNチャンネル型MOSトラン
ジスタ4のゲート電極に接続し、Nチャンネル型MOS
トランジスタ4のソース電極を負電源に接続し、Nチャ
ンネル型MOSトランジスタ4のドレイン電極を第1の
インバータ5の入力端子に接続し、第1のインバータ5
の出力端子を出力端子7と第2のインバータ6の入力端
子に接続し、第2のインバータ6の出力端子を第1のイ
ンバータ5の入力端子に接続して構成している。
In the figure, the logic circuit of the present invention connects the first input terminal 1 to the gate electrode of a P-channel MOS transistor 3, connects the source electrode of the P-channel MOS transistor 3 to a positive power supply, and connects the first input terminal 1 to the gate electrode of a P-channel MOS transistor 3. The drain electrode of the transistor 3 is connected to the input terminal of the first inverter 5, and the second input terminal is connected to the gate electrode of the N-channel type MOS transistor 4.
The source electrode of the transistor 4 is connected to a negative power supply, the drain electrode of the N-channel MOS transistor 4 is connected to the input terminal of the first inverter 5, and the first inverter 5
The output terminal of the inverter 6 is connected to the output terminal 7 and the input terminal of the second inverter 6, and the output terminal of the second inverter 6 is connected to the input terminal of the first inverter 5.

上記の論理回路は、第1の入力端子1が論理値で“0″
で、第2の入力端子2が論理値で“0”のときは、Pチ
ャンネル型MOSトランジスタ3がオン状態になり、N
チャンネル型MOSトランジスタ4がオフ状態となるの
で、第1のインバータ5の入力端子は論理値で“1″と
なり、出力端子7に論理値で“0”を出力し、第1の入
力端子1が論理値で“1″で第2の入力端子2が論理値
で“1”のときは、Pチャンネル型MOSトランジスタ
3がオフ状態になり、Nチャンネル型MOSトランジス
タ4がオン状態となるので、第1のインバータ5の入力
端子は論理値で“0″となり、出力端子7に論理値で“
1″を出力する。また、第1の入力端子1が論理値で“
1″で第2の入力端子2が論理値で“0”のときは、P
チャンネル型MOSトランジスタ3がオフ状態になり、
Nチャンネル型MOSトランジスタ4もオフ状態となる
ので第1のインバータ5と第2のインバータ6の作用に
より前の状態を保持し、その値を出力端子7に出力する
。一方、第1の入力端子1が論理値で“O”で第2の入
力端子2が論理値で“1″のときは、Pチャンネル型M
OSトランジスタ3がオン状態になり、Nチャンネル型
MOSトランジスタ4もオン状態となるので入力禁止と
している。このようにして、SR型フリップフロップと
同等の機能を実現している。
In the above logic circuit, the first input terminal 1 has a logic value of “0”.
When the second input terminal 2 has a logical value of "0", the P-channel type MOS transistor 3 is turned on, and the N
Since the channel type MOS transistor 4 is turned off, the input terminal of the first inverter 5 has a logic value of "1", outputs a logic value of "0" to the output terminal 7, and the first input terminal 1 becomes When the logic value is "1" and the second input terminal 2 has a logic value of "1", the P-channel MOS transistor 3 is turned off and the N-channel MOS transistor 4 is turned on. The input terminal of inverter 5 of No. 1 has a logical value of “0”, and the output terminal 7 has a logical value of “0”.
1'' is output. Also, the first input terminal 1 is a logical value and outputs “
1" and the second input terminal 2 has a logical value of "0", P
Channel type MOS transistor 3 is turned off,
Since the N-channel MOS transistor 4 is also turned off, the previous state is maintained by the action of the first inverter 5 and the second inverter 6, and its value is output to the output terminal 7. On the other hand, when the first input terminal 1 has a logical value of "O" and the second input terminal 2 has a logical value of "1", the P-channel type M
Since the OS transistor 3 is turned on and the N-channel MOS transistor 4 is also turned on, input is prohibited. In this way, a function equivalent to that of an SR type flip-flop is realized.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明によれば、トランジスタの数
を減らすことができ、チップ面積を小さくできる効果が
ある。
As explained above, according to the present invention, it is possible to reduce the number of transistors and the chip area can be reduced.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の論理回路の一実施例を示すブロック図
、第2図は従来の論理回路を示すプロッり図である。 1・・・第1の入力端子   2・・・第2の入力端子
3・・・Pチャンネル型MOSトランジスタ4・・・N
チャンネル型MO3)ランジスタ5・・・第1のインバ
ータ  6・・・第2のインバー7・・・出力端子
FIG. 1 is a block diagram showing an embodiment of the logic circuit of the present invention, and FIG. 2 is a plot diagram showing a conventional logic circuit. 1...First input terminal 2...Second input terminal 3...P channel type MOS transistor 4...N
Channel type MO3) transistor 5...first inverter 6...second inverter 7...output terminal

Claims (1)

【特許請求の範囲】[Claims] (1)半導体集積回路において、第1の入力端子をPチ
ャンネル型MOSトランジスタのゲート電極に接続し、
該Pチャンネル型MOSトランジスタのソース電極を正
電源に接続し、該Pチャンネル型MOSトランジスタの
ドレイン電極を第1のインバータの入力端子に接続し、
第2の入力端子をNチャンネル型MOSトランジスタの
ゲート電極に接続し、該Nチャンネル型MOSトランジ
スタのソース電極を負電源に接続し、該Nチャンネル型
MOSトランジスタのドレイン電極を該第1のインバー
タの入力端子に接続し、該第1のインバータの出力端子
を出力端子と第2のインバータの入力端子に接続し、該
第2のインバータの出力端子を該第1のインバータの入
力端子に接続して構成したことを特徴とする論理回路。
(1) In a semiconductor integrated circuit, a first input terminal is connected to a gate electrode of a P-channel MOS transistor,
A source electrode of the P-channel MOS transistor is connected to a positive power supply, a drain electrode of the P-channel MOS transistor is connected to an input terminal of a first inverter,
A second input terminal is connected to the gate electrode of the N-channel MOS transistor, a source electrode of the N-channel MOS transistor is connected to a negative power supply, and a drain electrode of the N-channel MOS transistor is connected to the first inverter. an output terminal of the first inverter is connected to an output terminal and an input terminal of a second inverter, and an output terminal of the second inverter is connected to an input terminal of the first inverter. A logic circuit characterized by being configured.
JP63106118A 1988-04-28 1988-04-28 Logic circuit Pending JPH01276915A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63106118A JPH01276915A (en) 1988-04-28 1988-04-28 Logic circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63106118A JPH01276915A (en) 1988-04-28 1988-04-28 Logic circuit

Publications (1)

Publication Number Publication Date
JPH01276915A true JPH01276915A (en) 1989-11-07

Family

ID=14425536

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63106118A Pending JPH01276915A (en) 1988-04-28 1988-04-28 Logic circuit

Country Status (1)

Country Link
JP (1) JPH01276915A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006287906A (en) * 2005-03-31 2006-10-19 Hynix Semiconductor Inc Data latch circuit of semiconductor device
JP2007184925A (en) * 2005-12-30 2007-07-19 Infineon Technologies Ag Pulsed static flip-flop
JP2009206760A (en) * 2008-02-27 2009-09-10 Seiko Instruments Inc Delay circuit
JP2011147165A (en) * 2001-06-30 2011-07-28 Hynix Semiconductor Inc Semiconductor device equipped with register control delay lock loop
JP2012257188A (en) * 2010-08-25 2012-12-27 Semiconductor Energy Lab Co Ltd Latch circuit and semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011147165A (en) * 2001-06-30 2011-07-28 Hynix Semiconductor Inc Semiconductor device equipped with register control delay lock loop
JP2006287906A (en) * 2005-03-31 2006-10-19 Hynix Semiconductor Inc Data latch circuit of semiconductor device
JP2007184925A (en) * 2005-12-30 2007-07-19 Infineon Technologies Ag Pulsed static flip-flop
US8188780B2 (en) 2005-12-30 2012-05-29 Infineon Technologies Ag Pulsed static flip-flop
JP2009206760A (en) * 2008-02-27 2009-09-10 Seiko Instruments Inc Delay circuit
JP2012257188A (en) * 2010-08-25 2012-12-27 Semiconductor Energy Lab Co Ltd Latch circuit and semiconductor device

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