JPH01276656A - Resin sealed semiconductor - Google Patents
Resin sealed semiconductorInfo
- Publication number
- JPH01276656A JPH01276656A JP10695588A JP10695588A JPH01276656A JP H01276656 A JPH01276656 A JP H01276656A JP 10695588 A JP10695588 A JP 10695588A JP 10695588 A JP10695588 A JP 10695588A JP H01276656 A JPH01276656 A JP H01276656A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- resin
- inner lead
- thickness
- sealing resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 60
- 239000011347 resin Substances 0.000 title claims abstract description 34
- 229920005989 resin Polymers 0.000 title claims abstract description 34
- 238000007789 sealing Methods 0.000 claims abstract description 18
- 238000005452 bending Methods 0.000 abstract description 4
- 239000012530 fluid Substances 0.000 abstract description 4
- 238000013459 approach Methods 0.000 abstract 2
- 230000007423 decrease Effects 0.000 abstract 1
- 239000011800 void material Substances 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は樹脂封止型半導体装置に関し、特にその外形
が薄型化された樹脂封止型半導体装置において、樹脂内
のボイド発生防止のための改良構造に係るものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a resin-sealed semiconductor device, and particularly to a resin-sealed semiconductor device whose external shape is reduced in thickness to prevent the generation of voids in the resin. This relates to an improved structure.
第４図は、例えば特開昭５９−９２５５６号公報に示さ
れた従来の樹脂封止型半導体装置を示す断面図である。FIG. 4 is a sectional view showing a conventional resin-sealed semiconductor device disclosed in, for example, Japanese Patent Laid-Open No. 59-92556.
１は半導体素子、２はリードフレームでそのうちインナ
ーリード部３の先端が絶縁層４を介して半導体素子１の
上側に取付けられている。1 is a semiconductor element, and 2 is a lead frame, of which the tips of inner lead portions 3 are attached to the upper side of the semiconductor element 1 with an insulating layer 4 interposed therebetween.
５は半導体素子１上の電極であシ、ワイヤ６でインナー
リード部３と電気的に接続されている。Ｔは封止樹脂で
ある。Reference numeral 5 denotes an electrode on the semiconductor element 1, which is electrically connected to the inner lead portion 3 by a wire 6. T is a sealing resin.
以上は半導体素子１がリードフレーム２の下側に取付け
られた例であるが、半導体素子がリードフレームの上側
に取シ付けられた例としては、例えば特開昭６１−２５
８４５８号公報に示されたものがある。同公報によると
、インナーリード部の上側に電気絶縁物を介して半導体
素子が取シ付けられ、同素子の長手方向の端部に設けら
れた電極とインナーリード部とがワイヤで電気的に接続
されている。The above is an example in which the semiconductor element 1 is attached to the lower side of the lead frame 2, but as an example in which the semiconductor element is attached to the upper side of the lead frame, for example, Japanese Patent Laid-Open No. 61-25
There is one shown in Publication No. 8458. According to the publication, a semiconductor element is attached to the upper side of the inner lead part via an electrical insulator, and the electrode provided at the longitudinal end of the element and the inner lead part are electrically connected by wire. has been done.
従来の樹脂封止型半導体装置は以上のような構造である
ので、特に最近のガルウィング端子やＪ型端子等を用い
た表面実装型パッケージで装置外形が薄形化すると、第
４図に示す例では半導体装置１の下側の樹脂の厚みが上
側の樹脂の厚みに較べて小さくなシ、樹脂封止の際に矢
印で示すように上側の流体抵抗の小さい側の樹脂が半導
体素子１の下側に回）こみ、ボイド８を発生しやすいと
いう問題点があった。Conventional resin-sealed semiconductor devices have the above-mentioned structure, so when the outer dimensions of the device become thinner, especially with recent surface-mount packages that use gull-wing terminals or J-type terminals, the example shown in Figure 4. In this case, the thickness of the resin on the lower side of the semiconductor device 1 is smaller than the thickness of the resin on the upper side, and when sealing with resin, the resin on the upper side with lower fluid resistance is placed under the semiconductor element 1, as shown by the arrow. There was a problem in that it was easy to cause voids 8 to occur.
特開昭６１−２５８４５８号公報の例の場合は、半導体
素子上側の樹脂の厚みの方が小さくなシ、上側にボイド
が発生しやすいという問題点があった。In the case of the example disclosed in Japanese Unexamined Patent Publication No. 61-258458, there was a problem in that the thickness of the resin above the semiconductor element was smaller and voids were likely to occur on the upper side.
この発明は上記のような問題点を解消するためになされ
たもので、樹脂封止の際のボイド発生を防止し得るよう
にした、この種の樹脂封止型半導体装置を提供すること
を目的とする。This invention was made to solve the above-mentioned problems, and an object thereof is to provide a resin-sealed semiconductor device of this type that can prevent the occurrence of voids during resin sealing. shall be.
上記目的を達成させるために、この発明に係る樹脂封止
型半導体装置は、インナーリード部の半導体素子の端部
に近接した部分を折曲け、前記半導体素子を封止樹脂の
厚み方向の略中央に位置付けたものである。In order to achieve the above object, a resin-sealed semiconductor device according to the present invention bends a portion of an inner lead portion close to an end of a semiconductor element, so that the semiconductor element can be bent approximately in the thickness direction of the encapsulating resin. It is positioned in the center.
この発明における樹脂封止型半導体装置では、インナー
リード部を折曲げ、半導体素子を封止樹脂の厚み方向の
略中央に位置付けることによシ、半導体素子上下の封止
樹脂の厚みの差が小さくなシ、封止時の樹脂の流速の差
が小さくなる。In the resin-sealed semiconductor device of the present invention, by bending the inner lead portion and positioning the semiconductor element approximately at the center in the thickness direction of the encapsulating resin, the difference in the thickness of the encapsulating resin above and below the semiconductor element is reduced. Also, the difference in resin flow speed during sealing becomes smaller.
以下、この発明に係る樹脂封止型半導体装置の一実施例
につき、第１図を参照して詳細に説明する。Hereinafter, one embodiment of a resin-sealed semiconductor device according to the present invention will be described in detail with reference to FIG.
第１図はこの半導体装置の断面図であり、１は半導体素
子、２はリードフレームでそのインナーリード部３の先
端が絶縁層４を介して半導体素子１の上側に取付けられ
ている。このインナーリード部３は半導体素子１の端部
に近接した部分が上方に折曲げられ、絶縁層４を介して
半導体素子１を取付けるインナーリード部３の先端が上
方に平行移動し、半導体素子１全体が持上げられた状態
にある。５は半導体素子１上の電極であシ、ワイヤ６で
インナーリード部３と電気的に接続されている。Ｔは封
止樹脂を示す。FIG. 1 is a cross-sectional view of this semiconductor device, in which 1 is a semiconductor element, 2 is a lead frame, and the tip of an inner lead portion 3 of the lead frame is attached to the upper side of the semiconductor element 1 with an insulating layer 4 interposed therebetween. The inner lead portion 3 is bent upward at a portion close to the end of the semiconductor element 1, and the tip of the inner lead portion 3, to which the semiconductor element 1 is attached via the insulating layer 4, is translated upward and the semiconductor element 1 is bent upward. The whole thing is in a raised position. Reference numeral 5 denotes an electrode on the semiconductor element 1, which is electrically connected to the inner lead portion 3 by a wire 6. T indicates a sealing resin.
ここで、インナーリード部３の前記折曲げの程度は、半
導体素子１が封止樹脂Ｔの淳み方向の略中央に位置する
程度とし、半導体素子１上下の封止樹脂の厚みの差をで
きるだけ減少させる。Here, the degree of bending of the inner lead portion 3 is such that the semiconductor element 1 is located approximately in the center of the sealing resin T in the direction of bending, and the difference in the thickness of the sealing resin above and below the semiconductor element 1 is minimized. reduce
第２図は本発明の他の実施例を示す断面図であシ、半導
体素子１を絶縁層４を介してリードフレーム２のインナ
ーリード部３の上側に取シ付け、樹脂７で封止したもの
である。この実施例では、インナーリード部３の半導体
素子１の端部に近接した部分を下方に折曲げ、半導体素
子１を封止樹脂７の厚み方向の略中央に位置させ、半導
体素子１上下の樹脂の厚みの差を小さくしている。FIG. 2 is a sectional view showing another embodiment of the present invention, in which a semiconductor element 1 is attached to the upper side of an inner lead part 3 of a lead frame 2 via an insulating layer 4 and sealed with a resin 7. It is something. In this embodiment, a portion of the inner lead portion 3 close to the end of the semiconductor element 1 is bent downward, the semiconductor element 1 is positioned approximately in the center of the sealing resin 7 in the thickness direction, and the resin above and below the semiconductor element 1 is bent downward. The difference in thickness is reduced.
第３図は本発明のさらに他の実施例を示す断面図であシ
、インナーリード部３を半導体素子１上の電極に形成さ
れたバンク９に接続したものである。第１図と同様に、
インナーリード部３の半導体素子１の端部に近接した部
分を上方に折曲げ、半導体素子１を封止樹脂７の厚み方
向の略中央に位置させ、半導体素子１上下の樹脂の厚み
の差を小さくしている。FIG. 3 is a sectional view showing still another embodiment of the present invention, in which the inner lead portion 3 is connected to the bank 9 formed on the electrode on the semiconductor element 1. Similar to Figure 1,
The portion of the inner lead portion 3 close to the end of the semiconductor element 1 is bent upward, and the semiconductor element 1 is positioned approximately in the center of the sealing resin 7 in the thickness direction, so that the difference in the thickness of the resin above and below the semiconductor element 1 is reduced. I'm keeping it small.
以上のように、この発明によればインナーリード部の半
導体素子の端部に近接した部分を折曲け、半導体素子を
封止樹脂の厚み方向の略中央に位置させたので、半導体
素子上下の樹脂の厚みの差、つまシ、封止樹脂の流体抵
抗の差が減少し、半導体素子の一方の側の樹脂が他方の
側に回シ込むことに起因するボイドの発生の少々いもの
が得られるという効果がある。As described above, according to the present invention, the portion of the inner lead portion close to the end of the semiconductor element is bent, and the semiconductor element is positioned approximately in the center of the sealing resin in the thickness direction. The difference in resin thickness, the difference in the fluid resistance of the sealing resin, and the difference in the fluid resistance of the sealing resin are reduced, and the generation of voids caused by the resin on one side of the semiconductor element sinking into the other side is reduced. It has the effect of being
第１図はこの発明の一実施例による樹脂制止型半導体装
置を示す断面図、第２図および第３図はこの発明の他の
実施例を示す樹脂封止型半導体装置の断面図、第４図は
従来例による樹脂封止型半導体装置の断面図である。
１φ・−−半導体素子、２・争・・リードフレーム、３
・・・・インナーリード部、７・・・・封止樹脂。FIG. 1 is a cross-sectional view showing a resin-molded semiconductor device according to one embodiment of the present invention, FIGS. 2 and 3 are cross-sectional views of a resin-molded semiconductor device according to another embodiment of the present invention, and FIG. The figure is a sectional view of a conventional resin-sealed semiconductor device. 1φ---semiconductor element, 2. lead frame, 3
... Inner lead part, 7 ... Sealing resin.
Claims (1)
付けられ樹脂封止される樹脂封止型半導体装置において
、前記インナーリード部の前記半導体素子の端部に近接
した部分を厚み方向に折曲げ、前記半導体素子が封止樹
脂の厚み方向の略中央に位置させたことを特徴とする樹
脂封止型半導体装置。In a resin-sealed semiconductor device in which a semiconductor element is attached to an inner lead portion of a lead frame and sealed with resin, a portion of the inner lead portion close to an end of the semiconductor element is bent in the thickness direction, and the semiconductor element is 1. A resin-sealed semiconductor device characterized in that: is located approximately at the center of the sealing resin in the thickness direction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10695588A JPH01276656A (en) | 1988-04-27 | 1988-04-27 | Resin sealed semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10695588A JPH01276656A (en) | 1988-04-27 | 1988-04-27 | Resin sealed semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01276656A true JPH01276656A (en) | 1989-11-07 |
Family
ID=14446773
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10695588A Pending JPH01276656A (en) | 1988-04-27 | 1988-04-27 | Resin sealed semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01276656A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2760289A1 (en) * | 1997-02-28 | 1998-09-04 | Samsung Electronics Co Ltd | SEMICONDUCTOR CHIP CASE HAVING A COMBINED STRUCTURE OF CONDUCTORS SITUATED ON THE CHIP AND NORMAL STANDARD CONDUCTORS |
| DE19747105B4 (en) * | 1996-12-27 | 2005-05-12 | Lg Semicon Co. Ltd., Cheongju | Component with stacked semiconductor chips |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53105970A (en) * | 1977-02-28 | 1978-09-14 | Hitachi Ltd | Assembling method for semiconductor device |
| JPS54140474A (en) * | 1978-04-24 | 1979-10-31 | Hitachi Ltd | Resin-sealed semiconductor device |
| JPS596839B2 (en) * | 1975-09-09 | 1984-02-14 | 株式会社荏原製作所 | Compost production method |
-
1988
- 1988-04-27 JP JP10695588A patent/JPH01276656A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS596839B2 (en) * | 1975-09-09 | 1984-02-14 | 株式会社荏原製作所 | Compost production method |
| JPS53105970A (en) * | 1977-02-28 | 1978-09-14 | Hitachi Ltd | Assembling method for semiconductor device |
| JPS54140474A (en) * | 1978-04-24 | 1979-10-31 | Hitachi Ltd | Resin-sealed semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19747105B4 (en) * | 1996-12-27 | 2005-05-12 | Lg Semicon Co. Ltd., Cheongju | Component with stacked semiconductor chips |
| FR2760289A1 (en) * | 1997-02-28 | 1998-09-04 | Samsung Electronics Co Ltd | SEMICONDUCTOR CHIP CASE HAVING A COMBINED STRUCTURE OF CONDUCTORS SITUATED ON THE CHIP AND NORMAL STANDARD CONDUCTORS |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2915892B2 (en) | Resin-sealed semiconductor device and method of manufacturing the same | |
| KR900017153A (en) | Semiconductor device and manufacturing method thereof | |
| KR910007094A (en) | Resin Sealed Semiconductor Device | |
| JPH04214643A (en) | Resin-sealed semiconductor device | |
| JPH01276656A (en) | Resin sealed semiconductor | |
| JPS5916357A (en) | Semiconductor device | |
| JPS62235763A (en) | Lead frame for semiconductor device | |
| JP2542274Y2 (en) | Semiconductor device | |
| JPS5949695B2 (en) | Manufacturing method for glass-sealed semiconductor devices | |
| JPS62147752A (en) | Semiconductor device | |
| JP2561415Y2 (en) | Semiconductor device | |
| JPH01255259A (en) | Resin-sealed semiconductor device | |
| KR200331874Y1 (en) | Multi-pin Package of Semiconductor | |
| JPS5967659A (en) | Semiconductor device | |
| JPS59144154A (en) | Resin-sealed electronic device | |
| JPS635253Y2 (en) | ||
| JPH03169057A (en) | Semiconductor device | |
| JPH0362564A (en) | Semiconductor device | |
| JPH11191608A (en) | Semiconductor device and its manufacture | |
| JPS63104458A (en) | Semiconductor device | |
| JPH04253363A (en) | Lead frame and semiconductor device using the same | |
| JPH05218271A (en) | Ic package | |
| JPS62183546A (en) | Semiconductor device | |
| JPS6220352A (en) | Semiconductor device | |
| JPH0228353A (en) | Resin sealed type semiconductor device |