JPH01274958A - Specular polishing method for outer periphery portion of wafer - Google Patents
Specular polishing method for outer periphery portion of waferInfo
- Publication number
- JPH01274958A JPH01274958A JP10335788A JP10335788A JPH01274958A JP H01274958 A JPH01274958 A JP H01274958A JP 10335788 A JP10335788 A JP 10335788A JP 10335788 A JP10335788 A JP 10335788A JP H01274958 A JPH01274958 A JP H01274958A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- polishing
- polishing drum
- outer periphery
- drum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 70
- 238000000034 method Methods 0.000 title claims description 18
- 230000002093 peripheral effect Effects 0.000 claims description 9
- 238000007517 polishing process Methods 0.000 claims 1
- 239000004744 fabric Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、外周部に直線部分を備えた円盤形の半導体ウ
ェハの外周部を鏡面研磨するための鏡面研磨方法に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a mirror polishing method for mirror polishing the outer periphery of a disk-shaped semiconductor wafer having a straight portion on the outer periphery.
［従来の技術］
例えば、シリコンウェハなどの半導体ウェハは、エツジ
のチッピング防止やエピタキシャル成長時のクラウン防
止などのために、通常その周縁部が面取り加工される。[Background Art] For example, the peripheral edge of a semiconductor wafer such as a silicon wafer is usually chamfered to prevent edge chipping or crowning during epitaxial growth.
この面取り加工は、ダイヤモンド砥石て研削することに
より行われるか、その研削後に加工歪層か残り易く、こ
のような加工歪層が残っていると、デバイスプロセスに
おいて熱処理を繰り返したときに結晶欠陥か発生するこ
とがある。This chamfering process is performed by grinding with a diamond whetstone, and a strained layer tends to remain after the grinding. If such a strained layer remains, crystal defects may occur when heat treatment is repeated in the device process. This may occur.
そのため、通常は、上記加工歪層をエツチングにより除
去するようにしているが、エッチンク処理した表面は、
波状あるいはうろこ状の凹凸となって汚れが残り易く、
このような汚れか面取部に少しでも残っていると、デバ
イスプロセスにおいてウェハ全体にその汚れか拡散し、
該ウェハの特性を劣化させることになる。Therefore, the above-mentioned strained layer is usually removed by etching, but the etched surface is
Dirt tends to remain in the form of wavy or scale-like unevenness,
If even a small amount of such dirt remains on the chamfer, it will spread throughout the wafer during the device process.
This will deteriorate the characteristics of the wafer.
従って、ウェハの精度を向上させるためには、」−記面
取部や軸線と並行する周側面などのウェハ外周部を鏡面
研磨することによって汚れを完全に除去することか必要
であり、その場合、鏡面状態に部分的な差異か生じない
、太うにウェハの表面研磨をする場合と同様の精密さか
要求される。Therefore, in order to improve the precision of the wafer, it is necessary to completely remove dirt by mirror polishing the outer periphery of the wafer, such as the chamfered part and the peripheral side parallel to the axis. , the same precision as when polishing the surface of a wafer is required, with only partial differences in the mirror surface state.
面Ｌｒ従来、ウェハの外周部を加工する方法として、特
公昭５７−１０５６８号公報や実開昭６２・３７９２５
号公報等に記載された方法か知られている。前者は、マ
スターに倣ってウェハを一定の寸法に仕上ける方式のも
のであり、また、後者は、加工物の形状を予めコンピュ
ーターに記憶させておき、それに倣−ンてウェハを加工
する（）のてありて、実質的にマスターを使用する前者
のものと同じ方式のものである。Surface Lr Conventionally, as a method for processing the outer peripheral part of a wafer, Japanese Patent Publication No. 57-10568 and Utility Model Application Laid-Open No. 62-37925 have been used.
The method described in the above publication is known. The former is a method in which the wafer is finished to a certain size by imitating a master, and the latter is a method in which the shape of the workpiece is stored in advance in a computer and the wafer is processed by copying it () This is essentially the same method as the former, which uses a master.
しかしなからこれらの方法は、何れも、マスター形状に
倣ってウェハを加工するものであるため、面取り加工や
仕上げ加工等の比較的研削量の大きい加工には適してい
るか、マスター寸法とウェハ寸法との間に９ミクロンの
違いかあると、ウェハ外周部を所望の鏡面状態に仕上げ
ることか不可能てあり、従って、精密さを要求される上
記鏡面研磨には適さない。However, since all of these methods process the wafer by imitating the master shape, they are not suitable for machining that requires a relatively large amount of grinding, such as chamfering or finishing. If there is a difference of only 9 microns between the two, it is impossible to finish the outer peripheral portion of the wafer to the desired mirror finish, and therefore it is not suitable for the mirror polishing described above, which requires precision.
そこ′ｒ、本発明者らは、特願昭６２−２：１０３９８
号によ、−）て、ウェハの外周部を精密に鏡面研磨する
ことのできる装置を提案した。この装置によれば。Therefore, the inventors of the present invention have submitted patent application No. 62-2:10398.
In 2006, we proposed an apparatus that can precisely polish the outer periphery of a wafer to a mirror surface. According to this device.
円盤形のウェハな軸線の回りに回転させながら、該クエ
への外周部に回転する研磨ドラムを一定の力で押し付り
て研磨することにより、ウェハの形状に応じてその外周
部を精度よく研磨することかできる。While rotating around the axis of a disc-shaped wafer, a rotating polishing drum is pressed against the outer periphery of the wafer with a constant force for polishing, thereby polishing the outer periphery with precision according to the shape of the wafer. Can be polished.
ところか２第５図に示すように、外周部に直線部分１ａ
（オリエンテーションフラット）を備えたウェハ１を研
磨する場合、ウェハ１の回転により研磨ドラム２か該ウ
ェハｌの円弧状部分１ｂから直線部分Ｉａにかかったと
きに、該研磨ドラム２かウェハの形状変化に十分追随し
て変位しきれず、該直線部分１ａの端部１ｃにおいてウ
ェハ】への接触が緩慢となって研磨か不十分になるおそ
れかある。However, as shown in Fig. 5, there is a straight section 1a on the outer periphery.
When polishing a wafer 1 having a flat orientation, when the rotation of the wafer 1 causes the polishing drum 2 to move from the circular arc portion 1b of the wafer l to the straight portion Ia, the shape of the polishing drum 2 or the wafer changes. There is a possibility that the contact with the wafer at the end 1c of the straight line portion 1a becomes slow, resulting in insufficient polishing.
［発明か解決しようとする課題］
本発明の課題は、外周部に直線部分を備えた円盤形のウ
ェハを軸線の回りに回転させながら、該ウェハの外周部
に回転する研磨ドラムを押し付けて研磨するに当り、該
ウェハの外周部に形成された直線部分を確実に鏡面研磨
できるようにすることにある。[Problems to be Solved by the Invention] An object of the present invention is to polish a disk-shaped wafer having a straight portion on its outer periphery by pressing a rotating polishing drum against the outer periphery of the wafer while rotating it around an axis. In doing so, the object is to ensure that the straight portion formed on the outer periphery of the wafer can be mirror-polished.
［課題を解決するための手段］
上記課題を解決するため、本発明は、ウェハ及び研磨ド
ラムをそれぞれ一方向に回転させて研磨したあと、これ
らのウェハ及び研磨ドラムのうち少なくとも一方を逆方
向に回転させて研磨することを特徴とするものである。[Means for Solving the Problems] In order to solve the above problems, the present invention rotates and polishes the wafer and the polishing drum in one direction, and then rotates at least one of the wafer and the polishing drum in the opposite direction. It is characterized by rotating and polishing.
［発明の具体例］ 以下２本発明の方法について更に詳細に説明する。[Specific examples of the invention] The following two methods of the present invention will be explained in more detail.
第１図は、本発明の方法の実施に好適に使用し得る鏡面
研磨装置の一例を示すもので、この研磨装置は次のよう
な構成を有している。即ち、機台１０上にはテーブル支
持部材】１か設けられ、このテーブル支持部材１１上に
は、外周部に一つ又は複数の直線部分１２ａ（第２図参
照）を備えた円盤形のウェハ１２を保持するチャックテ
ーブル１３か、その軸線の回りに回転自在に支持され、
該チャックテーブル１３の駆動軸１３ａは、タイミンク
プーリ１４及びタイミングベルト１５を介してモータ等
の正逆回転可能な駆動源１６に連結され、コンピュータ
等の制御手段１８により、所定のプログラムに従って例
えば１〜１０ｒ、ｐ、＊、程度の低速度で正方向と逆方
向とに駆動され得るようになっている。そして、該チャ
ックテーブル１３の上面には、ウェハ１２をハキュウム
チャックするチャック手段か設けられ、このチャック手
段が、駆動軸］、３ａ中を貫通する吸引ｖＩ７を通して
図示しない吸引ポンプに連結されている。FIG. 1 shows an example of a mirror polishing apparatus that can be suitably used to carry out the method of the present invention, and this polishing apparatus has the following configuration. That is, a table support member] 1 is provided on the machine base 10, and a disk-shaped wafer having one or more straight portions 12a (see FIG. 2) on the outer periphery is mounted on the table support member 11. The chuck table 13 holding the chuck table 12 is rotatably supported around its axis,
The drive shaft 13a of the chuck table 13 is connected via a timing pulley 14 and a timing belt 15 to a drive source 16 such as a motor that can rotate in forward and reverse directions. It can be driven in the forward and reverse directions at a low speed of about 10r,p,*. A chuck means for chucking the wafer 12 is provided on the upper surface of the chuck table 13, and this chuck means is connected to a suction pump (not shown) through a suction vI7 passing through the drive shaft 3a. There is.
また、上記機台１０上には、スライドレール２１に沿っ
てシリンダ２２により摺動されるスライドテーブル２０
を有しておつ、このスライドテーブル２０には、摺動部
分にエアを介在させることによって摺動抵抗を小さくし
たエアスライド機構２３を介して研磨ドラム取付部材２
４かチャラフテーブル１コの方向に移動自在に取り付け
られ、該研磨ドラム取付部材２４の先端には、螺子棒２
５を駆動することによって該螺子棒２５に螺合されたブ
ラケット２６を案内杆２７に沿って昇降させる昇降用モ
ーターｚ８か取り付けられており、該ブラケット２６に
は、ウェハ１２の外周部を鏡面加工する研磨ドラム２９
が軸線の回りに回転自在に支持されると共に、該研磨ド
ラム２９を正逆方向に駆動するドラム駆動用モーターコ
０か取゛り付けられ、このドラム駆動用モーター３０即
ち研磨ドラム２９が、上記制御手段１８により、チャッ
クチーフル１３の正逆回転に対応して正逆方向に駆動さ
れるようになワている。Also, on the machine stand 10 is a slide table 20 that is slid by a cylinder 22 along a slide rail 21.
The slide table 20 is equipped with a polishing drum mounting member 2 via an air slide mechanism 23 that reduces sliding resistance by interposing air in the sliding portion.
At the tip of the polishing drum mounting member 24, a threaded rod 2 is attached.
A lifting motor z8 is attached to which the bracket 26 screwed onto the screw rod 25 is raised and lowered along the guide rod 27 by driving the screw rod 25. polishing drum 29
is rotatably supported around an axis, and a drum drive motor 0 is attached to drive the polishing drum 29 in forward and reverse directions. By the means 18, the chuck tip is driven in forward and reverse directions in response to the forward and reverse rotation of the chuck chief full 13.
なお、上記研磨ドラム２９は、円筒形のドラム部材の外
面に研磨布を貼着したものである。The polishing drum 29 is a cylindrical drum member with a polishing cloth attached to the outer surface thereof.
そして、加工時に上記研磨ドラム２９をウェハ１２の外
周部に一定の力で押し付ける付勢手段を構成するため、
上記スライドテーブル２ｏには２つのプーリ３１，３２
が取り付けられ、これらのプーリ３１．３２に、一端を
研磨ドラム取付部材２４の突起３３に係止されたロープ
３４か巻き掛けられると共に、該ローブ３４の他端にウ
ェイト３５か吊設されておす、これによって、上記スラ
イドテーブル２０かシリンダ２２の作動によりチャック
テーブル１３の方へ前進したときに、それかストローク
エンドに到達する直前に研磨ドラム２９がウェハ１２に
当接して。In order to constitute a biasing means for pressing the polishing drum 29 against the outer peripheral portion of the wafer 12 with a constant force during processing,
The slide table 2o has two pulleys 31 and 32.
are attached to the pulleys 31 and 32, and a rope 34 whose one end is secured to the protrusion 33 of the polishing drum mounting member 24 is wound around the rope 34, and a weight 35 is suspended from the other end of the rope 34. As a result, when the slide table 20 moves forward toward the chuck table 13 by the operation of the cylinder 22, the polishing drum 29 comes into contact with the wafer 12 just before reaching the stroke end.
研磨ドラム取付部材２４がウェイト３５を引き上げなが
らスライドテーブル２０に対して相対的に後退するよう
に構成され、このとき研磨ドラム取付部材２４に作用す
るウェイト３５の重力によって上記押付力か発生するよ
うになっている。この押付力の大きさは、加工条件によ
って相違するが、通常は、チャックテーブル１３による
ウェハ１２の保持力とのバランスや研磨布の強度等を考
慮し、適当な力に設定される。The polishing drum mounting member 24 is configured to move backward relative to the slide table 20 while pulling up the weight 35, and at this time, the above-mentioned pressing force is generated by the gravity of the weight 35 acting on the polishing drum mounting member 24. It has become. The magnitude of this pressing force varies depending on the processing conditions, but is usually set to an appropriate force in consideration of the balance with the holding force of the wafer 12 by the chuck table 13, the strength of the polishing cloth, etc.
また、図示はしていないが、上記研磨ドラム２９かウェ
ハ１２に接触する部分には、化学研磨剤の供給ノズルが
設けられ、加工時に該ノズルから化学研磨剤か供給され
るようになっている。Although not shown, a chemical abrasive supply nozzle is provided at the portion of the polishing drum 29 that contacts the wafer 12, and the chemical abrasive is supplied from the nozzle during processing. .
次に、上記構成の鏡面研磨装置によってウェハ外周部を
鏡面研磨する方法について述べる。Next, a method for mirror polishing the outer peripheral portion of a wafer using the mirror polishing apparatus having the above configuration will be described.
ウェハ１２がチャック手段によりチャックテーブル１３
上に所定の向きで吸着、保持されると、シリンダ２２か
作動してスライドテーブル２０か前進し、正方向に回転
を始めた研磨ドラム２９かウェハ１２の外周部に当接す
る。そして、上記チャックテーブル１３か駆動源１６に
より低速（１〜１０．ｒ、ｐ、ｍ、 ）で正方向に１回
転し、ウェハ１２の外周部が上記研磨ドラム２９により
鏡面研磨される（第２図Ａ〜Ｈ参照）。The wafer 12 is placed on the chuck table 13 by the chuck means.
When the wafer 12 is attracted and held in a predetermined direction, the cylinder 22 is actuated, the slide table 20 moves forward, and the polishing drum 29, which has started rotating in the forward direction, comes into contact with the outer periphery of the wafer 12. Then, the chuck table 13 or the drive source 16 rotates once in the forward direction at a low speed (1 to 10.r, p, m, (See Figures A-H).
上記正回転での研磨が終了すると、研磨ドラム２９がウ
ェハ１２から一旦離間し、その回転方向か逆転する。そ
して、該研磨ドラム２９が再びウェハ１ｚに当接すると
、今度はチャックテーブル１３か逆方向に低速で１回転
し、上記正回転の場合と同様の研磨が行われる（第３図
Ａ−Ｈ参照）。When the polishing in the normal rotation is completed, the polishing drum 29 is once separated from the wafer 12, and its rotating direction is reversed. When the polishing drum 29 comes into contact with the wafer 1z again, the chuck table 13 rotates once at low speed in the opposite direction, and polishing is performed in the same way as in the case of forward rotation (see FIGS. 3A-H). ).
かくして、ウェハ１２及び研磨ドラム２９をそれぞれ正
方向に回転させた場合と逆方向に回転させた場合とにつ
いて研磨を行うことにより、ウェハ１２の全周が均等に
鏡面研磨されることになる。Thus, by performing polishing while rotating the wafer 12 and the polishing drum 29 in the forward direction and in the reverse direction, the entire circumference of the wafer 12 is mirror-polished evenly.
即ち、上記研磨時には、研磨ドラム２９が、エアスライ
ド機構２３の作用により、直線部分１２ａを備えたウェ
ハ１２の外周形状に倣って該ウェハ１２の半径方向に適
宜変位しながら、ウェイト３５の重量により一定の力て
該ウェハ１２に押し付けられているが、該研磨ドラム？
、９かウェハ１２の円弧状部分１２ｂから直線部分１２
ａ ｆ％′、かかったとき（第２図Ｃ）に、該ウェハ１
２の形状変化に十分追随しきれず、該直線部分１２３の
端部においてウェハ１２への接触か緩慢となって十分な
研磨か行われにくい、そこ。That is, during the polishing, the polishing drum 29 is appropriately displaced in the radial direction of the wafer 12 by the action of the air slide mechanism 23, following the outer peripheral shape of the wafer 12 having the straight portion 12a, while being displaced by the weight of the weight 35. Is the polishing drum pressed against the wafer 12 with a certain force?
, 9 or from the arcuate portion 12b of the wafer 12 to the straight portion 12
af%' (FIG. 2C), the wafer 1
2, and contact with the wafer 12 at the end of the straight line portion 123 is slow, making it difficult to perform sufficient polishing.
て、ウェハ１２を逆方向に回転させて同様の研磨を行・
うことにより、正回転では研磨されにくい上記部分が逆
回転によって十分に研磨されることになるのである。Then, rotate the wafer 12 in the opposite direction and perform similar polishing.
As a result, the above-mentioned portions that are difficult to polish with forward rotation can be sufficiently polished with reverse rotation.
なお、ウェハ１ｚの回転数に比べて研磨ドラム２９の回
転数か十分大きい場合には、ウェハ１２及び研磨ドラム
２９のうらの少なくとも一方な正逆に回転変更するよう
にしても良く、また、ウェハ１２を正逆方向に１回転さ
せるたけでは不十分な場合は、それぞれの方向に複数回
転させることもできる。Note that if the rotation speed of the polishing drum 29 is sufficiently large compared to the rotation speed of the wafer 1z, the rotation of at least one of the backs of the wafer 12 and the polishing drum 29 may be changed to forward and reverse. If it is not sufficient to rotate 12 once in the forward and reverse directions, it is also possible to rotate it multiple times in each direction.
さらに、上記例はウェハの軸線と並行な周側面を鏡面研
磨する場合であるか、第４図に示すように、ウェハ３８
の外周部に形成された面取部３９を鏡面研磨する場合に
は、該ウェハ３８即ちチャックテーブル４０の軸線か、
又は研磨ドラム４１の軸線を面取角θに応して傾斜させ
ればよいゆ
［発明の効果］
このように１本発明によれは、ウェハ及び研磨ドラムを
一方向に回転させて研磨したあと、それらのうち少なく
とも−・方を逆方向に回転させて再度研磨するようにし
たので、一方向の回転たけては研磨されにくいウェハの
直線部分を、逆回転ての研磨によって確実に鏡面研磨す
ることかできる。Furthermore, the above example is for mirror polishing the circumferential side parallel to the axis of the wafer, or as shown in FIG.
When mirror-polishing the chamfered portion 39 formed on the outer circumference of the wafer 38, the axis of the wafer 38, that is, the chuck table 40,
Alternatively, the axis of the polishing drum 41 may be inclined in accordance with the chamfer angle θ. [Effects of the Invention] As described above, according to the present invention, after polishing by rotating the wafer and the polishing drum in one direction. , at least one of them is rotated in the opposite direction and polished again, so that the straight parts of the wafer that are difficult to polish when rotated in one direction are reliably mirror-polished by polishing while rotating in the opposite direction. I can do it.
第１図は本発明の方法の実施に使用される研磨装τの一
例を示す側面図、第２図Ａ〜Ｈ及び第３図Ａ〜Ｈは本発
明の研磨方法の段階的な説明図、第４図は面取りされた
ウェハの面取部を鏡面研磨する場合の部分側面図、第５
図は直線部分を有するウェハの外周部を鏡面研磨する場
合にフいての説明図である。
１２．３ｇ ・・ウェハ１２゜ １２ａ ・・１宜線部
分、２９．４１ ・・研磨ドラム。
特許出願人 スピードファム株式会社第１図
第２図
第３図
第４図
ＧＨ
第５図FIG. 1 is a side view showing an example of the polishing apparatus τ used in carrying out the method of the present invention, FIGS. Figure 4 is a partial side view when mirror polishing the chamfered part of a chamfered wafer;
The figure is an explanatory view of mirror polishing the outer peripheral portion of a wafer having a straight portion. 12.3g...Wafer 12° 12a...1st grade line part, 29.41...Polishing drum. Patent applicant Speed Fam Co., Ltd. Figure 1 Figure 2 Figure 3 Figure 4 GH Figure 5
Claims (1)
回りに回転させながら、該ウェハの外周部に回転する研
磨ドラムを押し付けて研磨する方法において、ウェハ及
び研磨ドラムをそれぞれ一方向に回転させて研磨したあ
と、ウェハ及び研磨ドラムのうち少なくとも一方を逆方
向に回転させて研磨することを特徴とするウェハ外周部
の鏡面研磨方法。1. A method of polishing by pressing a rotating polishing drum against the outer circumference of a disk-shaped wafer having a straight portion on its outer circumference while rotating it around its axis, in which the wafer and the polishing drum are each moved in one direction. A method for polishing an outer peripheral portion of a wafer to a mirror surface, the method comprising rotating and polishing the wafer and then polishing at least one of the wafer and the polishing drum in the opposite direction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10335788A JP2613081B2 (en) | 1988-04-26 | 1988-04-26 | Mirror polishing method for wafer periphery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10335788A JP2613081B2 (en) | 1988-04-26 | 1988-04-26 | Mirror polishing method for wafer periphery |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01274958A true JPH01274958A (en) | 1989-11-02 |
| JP2613081B2 JP2613081B2 (en) | 1997-05-21 |
Family
ID=14351882
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10335788A Expired - Fee Related JP2613081B2 (en) | 1988-04-26 | 1988-04-26 | Mirror polishing method for wafer periphery |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2613081B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0469150A (en) * | 1990-07-09 | 1992-03-04 | Bandou Kiko Kk | Numerically controlled grinding machine for glass plate |
| JPH04365549A (en) * | 1991-06-13 | 1992-12-17 | Nitomatsuku Ii R Kk | Mirror finishing device for outer peripheral surface of work |
| US6159081A (en) * | 1997-09-09 | 2000-12-12 | Hakomori; Shunji | Method and apparatus for mirror-polishing of workpiece edges |
-
1988
- 1988-04-26 JP JP10335788A patent/JP2613081B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0469150A (en) * | 1990-07-09 | 1992-03-04 | Bandou Kiko Kk | Numerically controlled grinding machine for glass plate |
| JPH04365549A (en) * | 1991-06-13 | 1992-12-17 | Nitomatsuku Ii R Kk | Mirror finishing device for outer peripheral surface of work |
| US6159081A (en) * | 1997-09-09 | 2000-12-12 | Hakomori; Shunji | Method and apparatus for mirror-polishing of workpiece edges |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2613081B2 (en) | 1997-05-21 |
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