JPH1133888A - Mirror finished surface chamfering device for wafer - Google Patents

Mirror finished surface chamfering device for wafer

Info

Publication number
JPH1133888A
JPH1133888A JP19859897A JP19859897A JPH1133888A JP H1133888 A JPH1133888 A JP H1133888A JP 19859897 A JP19859897 A JP 19859897A JP 19859897 A JP19859897 A JP 19859897A JP H1133888 A JPH1133888 A JP H1133888A
Authority
JP
Japan
Prior art keywords
wafer
polishing
drum
support
mirror
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19859897A
Other languages
Japanese (ja)
Inventor
Keiichiro Asakawa
慶一郎 浅川
Hiroshi Oishi
弘 大石
Junichi Matsuzaki
順一 松崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Super Silicon Crystal Research Institute Corp
Original Assignee
Super Silicon Crystal Research Institute Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Super Silicon Crystal Research Institute Corp filed Critical Super Silicon Crystal Research Institute Corp
Priority to JP19859897A priority Critical patent/JPH1133888A/en
Publication of JPH1133888A publication Critical patent/JPH1133888A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To make mirror finishing of chamfered parts from both the front surface and rear surface without inverting the wafer. SOLUTION: A wafer W whose chamfered parts are to be subjected to mirror finishing is sucked in horizontal attitude by a vacuum chuck 31 of a wafer support 30. A polishing drum 30 to make mirror finishing of each chamfered part is borne in such a way as rotatable and also movable in the axial direction by a drum support 20 whose inclination angle is changeable centering on the revolving shaft C. A weight 37 is coupled with one side of the wafer support 30, and by this weight 37 a polishing pressure is generated to press the chamfered part of the wafer W to the peripheral surface of the polishing drum 10. The wafer support 30 is moved along a guide member 35, whereby the contact angle θ of the drum 10 relative to the chamfered part varies continuously or steppedly during the mirror finishing, and the chamfered part is made mirror finishing both from the front surface and rear surface.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、ウェーハの面取り部を
均一に鏡面研磨する装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for mirror-polishing a chamfered portion of a wafer uniformly.

【0002】[0002]

【従来の技術】Siウェーハ等の半導体ウェーハは、エ
ッジのチッピング防止やエピタキシャル成長時のクラウ
ン防止等のため、ダイヤモンド砥石を用いた研削により
エッジ部が面取り加工されている。面取り加工されたエ
ッジ部は、結晶欠陥の原因となる加工歪み,衝撃による
破損,発塵等の問題を含んでいる。そこで、研削加工に
よるエッジ部を面取りした後、面取り部が鏡面研磨され
ている。面取り部の鏡面研磨として、研磨布を装着した
ドラムを回転させ、ウェーハの外周部をドラムに押し当
てる装置が特開平7−314304号公報で紹介されて
いる。この装置は、ウェーハの面取り部を表面側から研
磨する研磨ドラム,裏面側から研磨する研磨ドラム及び
周端面側から研磨する研磨ドラムの3種の研磨ドラムを
配置している。しかし、1枚のウェーハの面取り部を研
磨するために複数の研磨ドラムが必要とされるため、装
置全体が大型化する。また、ウェーハの面取り部に対す
る各研磨ドラムの角度が固定されているため、面取り部
を円弧状断面に研磨できない。
2. Description of the Related Art An edge portion of a semiconductor wafer such as a Si wafer is chamfered by grinding using a diamond grindstone in order to prevent chipping of the edge and crown during epitaxial growth. The chamfered edge portion includes problems such as processing distortion, damage due to impact, and dust generation, which cause crystal defects. Then, after chamfering the edge part by grinding, the chamfered part is mirror-polished. Japanese Patent Application Laid-Open No. 7-314304 discloses a device for rotating a drum on which a polishing cloth is mounted and pressing the outer peripheral portion of the wafer against the drum as mirror polishing of a chamfered portion. This apparatus includes three types of polishing drums: a polishing drum for polishing a chamfered portion of a wafer from the front side, a polishing drum for polishing from the back side, and a polishing drum for polishing from the peripheral end side. However, since a plurality of polishing drums are required to polish the chamfered portion of one wafer, the entire apparatus becomes large. Further, since the angle of each polishing drum with respect to the chamfered portion of the wafer is fixed, the chamfered portion cannot be polished into an arc-shaped cross section.

【0003】そこで、研磨ドラムの研磨布が圧縮性であ
ることを利用し、一つの研磨ドラムでウェーハの面取り
部を表面側,裏面側から研磨する方法が実施されてい
る。この方法では、図1に示すようにチャック1で保持
されたウェーハ2を所定の角度で研磨ドラム3の周面に
当ててウェーハ2の面取り部を表面側から研磨した後、
ウェーハ2を反転させて別のチャック4に載せ替え、ウ
ェーハ2の面取り部を裏面側から研磨している。面取り
部が研磨加工されるウェーハ2は、図2に示すように研
磨ドラム3の周面に押し付けられる。ウェーハ2を押し
付ける力は、研磨圧力となって作用するが、圧縮性の研
磨布5を凹ませる原因ともなる。すなわち、ウェーハ2
の面取り部の輪郭に倣って研磨布5が凹むため、表面側
及び裏面側からの2回の研磨でウェーハ2の面取り部を
研磨加工できる。
Therefore, a method has been implemented in which the chamfered portion of a wafer is polished from the front side and the back side with one polishing drum, utilizing the fact that the polishing cloth of the polishing drum is compressible. In this method, as shown in FIG. 1, a wafer 2 held by a chuck 1 is applied to a peripheral surface of a polishing drum 3 at a predetermined angle, and a chamfered portion of the wafer 2 is polished from the front side.
The wafer 2 is turned over and placed on another chuck 4, and the chamfered portion of the wafer 2 is polished from the back side. The wafer 2 whose chamfer is to be polished is pressed against the peripheral surface of the polishing drum 3 as shown in FIG. The force pressing the wafer 2 acts as a polishing pressure, but also causes the compressible polishing pad 5 to be dented. That is, wafer 2
Since the polishing cloth 5 is depressed following the contour of the chamfered portion, the chamfered portion of the wafer 2 can be polished by polishing twice from the front side and the back side.

【0004】[0004]

【発明が解決しようとする課題】しかし、この方式でウ
ェーハ2の面取り部を研磨するとき、研磨量が多くなる
に従って面取り部の形状が崩れ易くなる。たとえば、図
3に示すように端面厚みがxの面取り部を鏡面研磨する
と、研磨量に応じて端面厚みyが小さくなる。端面厚み
yが小さすぎると、僅かな外力によってウェーハ2の周
辺が欠けることがある。表面研磨等の際にも、キャリア
でウェーハ2を保持することが困難になり、キャリアか
らウェーハ2が飛び出して研磨不能な状態になることも
ある。また、ウェーハ2の面取り部を表面側及び裏面側
から2回研磨する作業であるため、断面円弧状等の種々
に面取り形状に対応できない。更には、研磨工程を表面
側から裏面側に切り替える際にウェーハ2の反転が必要
とされるが、そのために装置全体が複雑になる。本発明
は、このような問題を解消すべく案出されたものであ
り、ウェーハの面取り部と接触する研磨ドラムの角度を
簡単な設備構成で可変にすることにより、面取り部の形
状を崩すことなく研磨することを目的とする。
However, when the chamfered portion of the wafer 2 is polished by this method, the shape of the chamfered portion tends to be broken as the polishing amount increases. For example, as shown in FIG. 3, when the chamfered portion having the end face thickness x is mirror-polished, the end face thickness y decreases according to the polishing amount. If the end face thickness y is too small, the periphery of the wafer 2 may be chipped by a slight external force. Also in the case of surface polishing or the like, it becomes difficult to hold the wafer 2 with the carrier, and the wafer 2 may jump out of the carrier and become unpolished. In addition, since the chamfered portion of the wafer 2 is polished twice from the front side and the back side, various chamfered shapes such as arc-shaped cross sections cannot be handled. Furthermore, when the polishing process is switched from the front side to the back side, the wafer 2 needs to be turned over, which complicates the entire apparatus. The present invention has been devised in order to solve such a problem, and the shape of the chamfered portion is broken by changing the angle of the polishing drum in contact with the chamfered portion of the wafer with a simple equipment configuration. The purpose is to polish without.

【0005】[0005]

【課題を解決するための手段】本発明の鏡面面取り装置
は、その目的を達成するため、面取り部が鏡面研磨され
るウェーハを水平状態で吸着する真空チャックを備えた
ウェーハ支持体と、ウェーハの面取り部に接触するよう
に配置された研磨ドラムと、該研磨ドラムを回転可能及
び軸方向に移動可能に支持し、旋回軸を中心として傾斜
角が変えられるドラム支持体と、ウェーハ支持体の一側
に連結され、研磨ドラムの周面にウェーハの面取り部を
押し付けて研磨圧力を発生させるウェイトと、旋回する
研磨ドラムによってウェーハ支持体が水平移動するとき
の案内となる水平方向のガイド部材とを備え、ウェーハ
の面取り部に対する研磨ドラムの接触角が鏡面加工中に
連続的又は段階的に変化することを特徴とする。
In order to achieve the object, a mirror chamfering apparatus of the present invention has a wafer support provided with a vacuum chuck for holding a wafer whose chamfer is mirror-polished in a horizontal state, A polishing drum arranged to be in contact with the chamfer, a drum support supporting the polishing drum rotatably and movably in an axial direction, and having a tilt angle that can be changed about a pivot axis; And a weight for pressing the chamfered portion of the wafer against the peripheral surface of the polishing drum to generate polishing pressure, and a horizontal guide member serving as a guide when the wafer support moves horizontally by the rotating polishing drum. Wherein the contact angle of the polishing drum with respect to the chamfered portion of the wafer changes continuously or stepwise during mirror polishing.

【0006】[0006]

【実施の形態】本発明の鏡面面取り装置は、図4に示す
ように研磨ドラム10をドラム支持体20に配置してい
る。ドラム支持体20は、研磨ドラム10を回転させる
回転駆動用モータ11を備えており、傾斜角θが調節可
能なように旋回軸Cの回りに傾動自在に設けられてい
る。また、ドラム支持体20には前後進用モータ21に
よってピッチ送りされる送りネジ22が設けられてお
り、送りネジ22の回転によって研磨ドラム10が軸方
向に前後進する。ドラム支持体20は、旋回軸Cに動力
連結された出力軸をもつ電動モータ(図示せず)により
旋回され、研磨ドラム10がウェーハWに所定の角度で
押し付けられる。ドラム支持体20の旋回は、連続的又
は断続的な旋回の何れであってもよく、連続旋回,断続
旋回の切り替えは電動モータによって随意制御される。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS In a mirror chamfering apparatus according to the present invention, a polishing drum 10 is disposed on a drum support 20, as shown in FIG. The drum support 20 is provided with a rotation drive motor 11 for rotating the polishing drum 10, and is provided so as to be tiltable around a rotation axis C so that the tilt angle θ can be adjusted. The drum support 20 is provided with a feed screw 22 that is pitch-fed by a forward / reverse motor 21, and the rotation of the feed screw 22 causes the polishing drum 10 to move forward and backward in the axial direction. The drum support 20 is turned by an electric motor (not shown) having an output shaft that is power-connected to the turning shaft C, and the polishing drum 10 is pressed against the wafer W at a predetermined angle. The turning of the drum support 20 may be either continuous or intermittent turning, and switching between continuous turning and intermittent turning is optionally controlled by an electric motor.

【0007】鏡面面取り加工されるウェーハWは、ウェ
ーハ支持体30に回転可能に設けられた真空チャック3
1に裏面が固定されている。真空チャック31は、ウェ
ーハ支持体30に設けられている回転駆動用モータ32
からの動力で回転する。ウェーハ支持体30には、支持
ベース33の起立支持部34で両端が支持されたガイド
部材35が嵌挿されている。ガイド部材35としては、
たとえば摩擦が非常に小さいエアスライド等の機構が使
用される。ウェーハ支持体30の一側には、リール36
を介して吊り下げられたウェイト37がワイヤ38で接
続されている。ウェイト37の荷重によって、図4で右
方向の力がウェーハ支持体30に加えられる。ウェーハ
支持体30は、ドラム支持体20が時計方向に回転する
力とウェイト37の荷重との関係に応じて右方向又は左
方向の何れかに移動する。
A wafer W to be mirror-chamfered is held on a vacuum chuck 3 rotatably provided on a wafer support 30.
The back surface is fixed to 1. The vacuum chuck 31 includes a rotation driving motor 32 provided on the wafer support 30.
It rotates with power from. A guide member 35 whose both ends are supported by the upright support portion 34 of the support base 33 is fitted into the wafer support 30. As the guide member 35,
For example, a mechanism such as an air slide with very small friction is used. A reel 36 is provided on one side of the wafer support 30.
Is suspended by a wire 38. The rightward force in FIG. 4 is applied to the wafer support 30 by the load of the weight 37. The wafer support 30 moves either rightward or leftward depending on the relationship between the force of the drum support 20 rotating clockwise and the load on the weight 37.

【0008】鏡面面取り加工が施されるウェーハWは、
図4において右方向又は左方向に移動しながら面取り部
が鏡面研磨される。ウェーハ支持体30を右方向に移動
させながら鏡面面取りする場合、先ず真空チャック31
を載せたウェーハ支持体30をガイド部材35の左端に
移動させ、真空チャック31にウェーハWを位置決めす
る(a)。ウェーハWをセットした後、ウェーハ支持体
30を左側に引っ張るモータ39の力を除去すると、ウ
ェーハ支持体30がフリーな状態になり、ウェイト37
により引っ張られて右方向に移動する(b)。右方向に
移動したウェーハ支持体30は研磨ドラム10に当り、
ウェーハ支持体30を引っ張るウェイト36の自重が研
磨圧力となる。研磨圧力は、ウェイト36の量を変える
ことにより調整される。このとき、ウェーハWの面取り
部の上面が研磨ドラム10で最初に研磨されるように、
ドラム支持体20の傾斜角θを調整する。
The wafer W to be subjected to mirror chamfering is
In FIG. 4, the chamfered portion is mirror-polished while moving rightward or leftward. When the mirror support is chamfered while moving the wafer support 30 to the right, first, the vacuum chuck 31 is used.
Is moved to the left end of the guide member 35, and the wafer W is positioned on the vacuum chuck 31 (a). After the wafer W is set, when the force of the motor 39 that pulls the wafer support 30 to the left is removed, the wafer support 30 becomes free and the weight 37
To move rightward (b). The wafer support 30 moved to the right hits the polishing drum 10,
The weight of the weight 36 pulling the wafer support 30 is the polishing pressure. The polishing pressure is adjusted by changing the amount of the weight 36. At this time, the upper surface of the chamfered portion of the wafer W is first polished by the polishing drum 10,
The tilt angle θ of the drum support 20 is adjusted.

【0009】研磨ドラム10は、予め設定されているプ
ログラムに従って旋回軸Cの回りにドラム支持体20を
回転させることにより、傾斜角θが変化される。傾斜角
θの変化は、図5に示すように連続的A又は間歇的Bの
何れであってもよい。傾斜角θを変化させるプログラム
は、面取り形状に応じて適宜選択される。また、傾斜角
θによって研磨ドラム10とウェーハWとの接触面積が
異なる場合、研磨圧力が一定にならず、研磨速度に差が
生じることがある。このような場合には、研磨量を一定
にするため、曲線Cで示すように研磨ドラムの傾斜速度
又は滞在時間を制御することも可能である。逆に、研磨
量を多くするような傾斜角θの設定も可能である。
The inclination angle θ of the polishing drum 10 is changed by rotating the drum support 20 around the rotation axis C according to a preset program. The change in the inclination angle θ may be either continuous A or intermittent B as shown in FIG. The program for changing the inclination angle θ is appropriately selected according to the chamfered shape. When the contact area between the polishing drum 10 and the wafer W is different depending on the inclination angle θ, the polishing pressure is not constant, and the polishing speed may be different. In such a case, in order to keep the polishing amount constant, it is also possible to control the inclination speed or residence time of the polishing drum as shown by the curve C. Conversely, it is also possible to set the inclination angle θ so as to increase the polishing amount.

【0010】面取り部上面の鏡面研磨(a)から面取り
部側面の研磨(b)を経て面取り部下面の鏡面研磨
(c)となるように傾斜角θを段階的に変化させる場
合、各段階の研磨ドラム10s ,10m ,10f とウェ
ーハWの面取り部との接触状態に応じて面取り部が図6
に示す形状に鏡面研磨される。また、傾斜角θを連続的
に変化させながら鏡面加工すると、ウェーハWの面取り
部は、丸みが付けられた形状に研磨仕上げされる。更
に、研磨加工中に前後進用モータ21で研磨ドラム10
を軸方向に移動させ、ウェーハWとの接触位置を変化さ
せると、研磨布の偏摩耗が防止される。
In the case where the inclination angle θ is changed stepwise so as to change from the mirror polishing (a) of the upper surface of the chamfer to the mirror polishing (c) of the lower surface of the chamfer through the polishing (b) of the side surface of the chamfer, According to the state of contact between the polishing drums 10 s , 10 m , and 10 f and the chamfered portion of the wafer W, the chamfered portion is as shown in FIG.
Is mirror-polished to the shape shown in FIG. Further, when the mirror processing is performed while the inclination angle θ is continuously changed, the chamfered portion of the wafer W is polished to a rounded shape. Further, during the polishing process, the polishing drum 10 is
Is moved in the axial direction to change the contact position with the wafer W, thereby preventing uneven wear of the polishing pad.

【0011】研磨加工は、ウェーハWの面取り部裏面か
ら開始することもできる。この場合には、ウェーハ支持
体30をガイド部材35の左端に位置させ、真空チャッ
ク31で吸着されているウェーハWに研磨ドラム10を
押し当て(図4d)、ドラム支持体20を反時計方向に
回転させながら(図4でd→c→b)、ウェーハWの面
取り部を鏡面加工する。このようにドラム支持体20の
傾斜角θを変化させながら面取り部を鏡面研磨するた
め、面取り部の上面(表面)から下面(裏面)までを連
続研磨できる。この研磨工程では、ウェーハWは常にウ
ェーハ支持体30の真空チャック31に吸着された状態
で左右方向に移動し、反転を必要としない。そのため、
設備構成の大型化を招くことなく、特に大口径化が著し
いウェーハWの鏡面面取り加工に適した装置となる。
The polishing process can be started from the back surface of the chamfered portion of the wafer W. In this case, the wafer support 30 is positioned at the left end of the guide member 35, and the polishing drum 10 is pressed against the wafer W sucked by the vacuum chuck 31 (FIG. 4D), and the drum support 20 is moved counterclockwise. While rotating (d → c → b in FIG. 4), the chamfered portion of the wafer W is mirror-finished. As described above, since the chamfered portion is mirror-polished while changing the inclination angle θ of the drum support 20, the upper surface (front surface) to the lower surface (back surface) of the chamfered portion can be continuously polished. In this polishing step, the wafer W always moves in the left-right direction while being attracted to the vacuum chuck 31 of the wafer support 30 and does not need to be inverted. for that reason,
This is an apparatus suitable for mirror-beveling a wafer W, which is particularly large in diameter, without increasing the size of the equipment configuration.

【0012】[0012]

【発明の効果】以上に説明したように、本発明の鏡面面
取り装置は、ウェーハの面取り部に対する研磨ドラムの
接触角を変えながら面取り部を鏡面研磨するため、設備
構成の複雑化を招くウェーハ反転機構を必要とすること
なく、連続した作業で表裏両面から面取り部が鏡面仕上
げされる。しかも、鏡面面取りされるウェーハが常に水
平状態に保持されたまま加工されるため、撓み等の影響
が抑えられ、大口径のウェーハであっても均一な面取り
加工が可能となる。
As described above, the mirror chamfering apparatus of the present invention performs mirror polishing of the chamfered portion while changing the contact angle of the polishing drum with respect to the chamfered portion of the wafer. The chamfered portion is mirror-finished from both front and back sides in a continuous operation without requiring a mechanism. In addition, since the wafer to be mirror-chamfered is always processed while being kept in a horizontal state, the influence of bending and the like is suppressed, and even a large-diameter wafer can be uniformly chamfered.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 ウェーハの反転を伴った従来の面取り部の研
磨を説明する図
FIG. 1 is a diagram illustrating a conventional polishing of a chamfered portion with reversal of a wafer.

【図2】 研磨ドラムにウェーハを押し付けたとき研磨
布が凹むことを説明する図
FIG. 2 is a view for explaining that a polishing cloth is depressed when a wafer is pressed against a polishing drum.

【図3】 鏡面加工前後の面取り部[Figure 3] Chamfer before and after mirror finishing

【図4】 本発明に従った鏡面面取り装置を使用してウ
ェーハの面取り部を鏡面加工する工程を順を追って説明
する図
FIG. 4 is a diagram for sequentially explaining a process of mirror-finishing a chamfered portion of a wafer using a mirror-chamfering apparatus according to the present invention.

【図5】 研磨加工中に変化させるドラム支持体の傾斜
角を示したグラフ
FIG. 5 is a graph showing the inclination angle of a drum support changed during polishing.

【図6】 表裏両面側から鏡面研磨されたウェーハの面
取り部と研磨ドラムとの位置関係を示す図
FIG. 6 is a diagram showing a positional relationship between a chamfered portion of a wafer mirror-polished from both sides and a polishing drum.

【符号の説明】[Explanation of symbols]

10:研磨ドラム 11:研磨ドラムの回転駆動用モ
ータ 20:ドラム支持体 21:前後進用モータ 2
2:送りネジ 30:ウェーハ支持体 31:真空チャック 3
2:回転駆動用モータ 33:支持ベース 34:起立支持部 35:ガイ
ド部材 36:リール 37:ウェイト 38:ワイヤ 39:モータ W:ウェーハ C:旋回軸 θ:ドラム支持体の傾
斜角 10s :鏡面研磨開始時の研磨ドラム 10m :鏡面研磨途中の研磨ドラム 10f :鏡面研磨終了時の研磨ドラム
10: Polishing drum 11: Motor for rotating and driving the polishing drum 20: Drum support 21: Motor for moving forward and backward 2
2: Lead screw 30: Wafer support 31: Vacuum chuck 3
2: Rotary drive motor 33: Support base 34: Standing support 35: Guide member 36: Reel 37: Weight 38: Wire 39: Motor W: Wafer C: Revolving axis θ: Dilution angle of drum support 10 s : Mirror surface Polishing drum at the start of polishing 10 m : Polishing drum during mirror polishing 10 f : Polishing drum at the end of mirror polishing

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 面取り部が鏡面研磨されるウェーハを水
平状態で吸着する真空チャックを備えたウェーハ支持体
と、ウェーハの面取り部に接触するように配置された研
磨ドラムと、該研磨ドラムを回転可能及び軸方向に移動
可能に支持し、旋回軸を中心として傾斜角が変えられる
ドラム支持体と、ウェーハ支持体の一側に連結され、研
磨ドラムの周面にウェーハの面取り部を押し付けて研磨
圧力を発生させるウェイトと、旋回する研磨ドラムによ
ってウェーハ支持体が水平移動するときの案内となる水
平方向のガイド部材とを備え、ウェーハの面取り部に対
する研磨ドラムの接触角が鏡面加工中に連続的又は段階
的に変化することを特徴とするウェーハの鏡面面取り装
置。
1. A wafer support provided with a vacuum chuck for horizontally holding a wafer whose chamfer is to be mirror-polished, a polishing drum arranged to be in contact with the chamfer of the wafer, and rotating the polishing drum. A drum support that is supported movably and axially movably and whose inclination angle can be changed about the rotation axis, and is connected to one side of the wafer support, and the chamfered portion of the wafer is pressed against the peripheral surface of the polishing drum for polishing. A weight for generating pressure, and a horizontal guide member for guiding the wafer support when the wafer support is horizontally moved by the rotating polishing drum, the contact angle of the polishing drum with respect to the chamfered portion of the wafer is continuous during mirror polishing. Or, a mirror chamfering device for a wafer characterized by changing stepwise.
JP19859897A 1997-07-24 1997-07-24 Mirror finished surface chamfering device for wafer Pending JPH1133888A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19859897A JPH1133888A (en) 1997-07-24 1997-07-24 Mirror finished surface chamfering device for wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19859897A JPH1133888A (en) 1997-07-24 1997-07-24 Mirror finished surface chamfering device for wafer

Publications (1)

Publication Number Publication Date
JPH1133888A true JPH1133888A (en) 1999-02-09

Family

ID=16393866

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19859897A Pending JPH1133888A (en) 1997-07-24 1997-07-24 Mirror finished surface chamfering device for wafer

Country Status (1)

Country Link
JP (1) JPH1133888A (en)

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Publication number Priority date Publication date Assignee Title
WO2002016076A1 (en) * 2000-08-18 2002-02-28 Tokyo Seimitsu Co., Ltd. Sheet peripheral edge grinder
JP2002110593A (en) * 2000-09-27 2002-04-12 Sony Corp Method and apparatus for removing remaining film on wafer edge
US7250365B2 (en) 2001-04-17 2007-07-31 Renesas Technology Corp. Fabrication method of semiconductor integrated circuit device
JP2007306018A (en) * 2007-07-09 2007-11-22 Renesas Technology Corp Method for manufacturing semiconductor integrated circuit device
JP2009027198A (en) * 2008-10-31 2009-02-05 Renesas Technology Corp Manufacturing method of semiconductor integrated circuit device
KR101409476B1 (en) * 2012-12-21 2014-06-18 주식회사 티지솔루션 edge polishing apparatus for substrate
CN107891348A (en) * 2017-11-21 2018-04-10 青海铸玛蓝宝石晶体有限公司 Polishing machine and polishing system
CN108214160A (en) * 2017-12-26 2018-06-29 佛山市博裕城玻璃机械有限公司 A kind of balance arm structure of edge polisher
CN108581774A (en) * 2018-07-02 2018-09-28 安吉腾佳艺家居有限公司 A kind of sander polished chair
CN111941192A (en) * 2020-06-06 2020-11-17 常世猛 Wafer processing device for chip manufacturing
CN112605854A (en) * 2020-12-15 2021-04-06 温美华 Middle and low end is iron drum bung hole polishing equipment of polishing for manufacturing
CN115922484A (en) * 2022-12-14 2023-04-07 西安奕斯伟材料科技有限公司 Edge polishing apparatus and edge polishing method

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002016076A1 (en) * 2000-08-18 2002-02-28 Tokyo Seimitsu Co., Ltd. Sheet peripheral edge grinder
US6913526B2 (en) 2000-08-18 2005-07-05 Tokyo Seimitsu Co., Ltd. Polishing machine for polishing periphery of sheet
JP2002110593A (en) * 2000-09-27 2002-04-12 Sony Corp Method and apparatus for removing remaining film on wafer edge
US7250365B2 (en) 2001-04-17 2007-07-31 Renesas Technology Corp. Fabrication method of semiconductor integrated circuit device
US7718526B2 (en) 2001-04-17 2010-05-18 Renesas Technology Corporation Fabrication method of semiconductor integrated circuit device
US7977234B2 (en) 2001-04-17 2011-07-12 Renesas Electronics Corporation Fabrication method of semiconductor integrated circuit device
JP2007306018A (en) * 2007-07-09 2007-11-22 Renesas Technology Corp Method for manufacturing semiconductor integrated circuit device
JP2009027198A (en) * 2008-10-31 2009-02-05 Renesas Technology Corp Manufacturing method of semiconductor integrated circuit device
KR101409476B1 (en) * 2012-12-21 2014-06-18 주식회사 티지솔루션 edge polishing apparatus for substrate
CN107891348A (en) * 2017-11-21 2018-04-10 青海铸玛蓝宝石晶体有限公司 Polishing machine and polishing system
CN108214160A (en) * 2017-12-26 2018-06-29 佛山市博裕城玻璃机械有限公司 A kind of balance arm structure of edge polisher
CN108581774A (en) * 2018-07-02 2018-09-28 安吉腾佳艺家居有限公司 A kind of sander polished chair
CN111941192A (en) * 2020-06-06 2020-11-17 常世猛 Wafer processing device for chip manufacturing
CN111941192B (en) * 2020-06-06 2021-08-20 郑君雄 Wafer processing device for chip manufacturing
CN112605854A (en) * 2020-12-15 2021-04-06 温美华 Middle and low end is iron drum bung hole polishing equipment of polishing for manufacturing
CN112605854B (en) * 2020-12-15 2022-06-10 徐州新大隆化工泵业制造有限公司 Middle and low end is iron drum bung hole polishing equipment of polishing for manufacturing
CN115922484A (en) * 2022-12-14 2023-04-07 西安奕斯伟材料科技有限公司 Edge polishing apparatus and edge polishing method

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